• Title/Summary/Keyword: Bio material

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Schottky barrier poly-Si thin film transistor by using erbium-silicided source and drain (어븀-실리사이드를 이용한 쇼트키 장벽 다결정 실리콘 박막 트랜지스터)

  • Shin, Jin-Wook;Koo, Hyun-Mo;Jung, Myung-Ho;Choi, Chel-Jong;Jung, Won-Jin;Cho, Won-Ju
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2007.11a
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    • pp.75-76
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    • 2007
  • Poly-Si Schottky barrier Thin Film Transistor (SB-TFT) is manufactured with erbium silicided source/drain. High quality poly-Si film was obtained by crystallizing the amorphous Si film with Excimer laser annealing (ELA) method. The fabricated poly-Si SB-TFT devices showed low leakage current and large on/off current ratio. Moreover, the electrical characteristics were considerably improved by 3% $H_2/N_2$ gas annealing, which is attributed to the reduction of trap states at the grain boundaries and interface trap states at gate oxide/poly-si channel.

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Effect of additives on the stability of Ru CMP slurry (첨가제가 Ru CMP slurry의 안정화에 미치는 영향)

  • Cho, Byung-Gwun;Kim, In-Kwon;Kang, Bong-Kyun;Park, Jin-Goo
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2007.11a
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    • pp.50-50
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    • 2007
  • 최근 DRAM 소자 내에서 Ruthenium (Ru) 은 높은 화학적 안정성, 누설전류에 대한 높은 저항성, 고유전체와의 높은 안정성등과 같은 특성으로 인해 금속층-유전막(insulator)-금속층 캐패시터에 대한 하부전극으로 각광받고 있다. 일반적으로 Ru은 화학적으로 매우 안정하여 습식 식각으로 제거하기 어려우며, 이로인해 건식 식각을 이용하여 Ru을 제거하는 것이 널리 통용되고 있다. 하지만 칵 캐패시터의 분리를 위해 Ru을 건식 식각할 경우, 유독한 $Ru0_4$ 가스가 발생할 수 있으며 Ru 하부전극의 탈균일한 표면과 몰드 산화막의 손실을 유발할 수 있다. 이로인해 각 캐패시터간의 분리와 평탄화를 위해 CMP 공정이 도입되게 되었다. 이러한 CMP 공정에 공급되는 슬러리에는 부식액, pH 적정제, 연마입자등이 첨가되는데 이때 연마입자가 응집하여 슬러리의 분산 안정성 저하에 영향을 줄 수 있다. 그리하여 본 연구에서는 Ru CMP Slurry에서의 surfactant와 같은 첨가제에 따른 zeta potential, particle size, sedimentation의 분석을 통해 slurry 안정성에 대란 영향을 살펴보았다. 또한 선택된 surfactant가 첨가된 Ru CMP Slurry를 제조하여 Ru의 removal rate와 TEOS에 대한 selectivity를 측정해 보았다.

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A Study on Dip-Pen Nanolithograpby Process to Fabricate 2D Pbotonic Crystal for Planar-Type Optical Bio-Sensor (평판형 광-바이오센서 (Planar-Type Optical Bio-Sensor)용 2차원 광자결정 제작을 위한 Dip-Pen Nanolithography 공정 연구)

  • Kim, Jun-Hyong;Lee, Jong-Il;Lee, Hyun-Yong
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2005.07a
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    • pp.381-383
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    • 2005
  • 바이오센서 응용을 위한 대칭 및 비대칭 마하젠더 간섭계 광도파로 소자의 설계, 제작 및 광학적 응답특성을 평가하였다. 설계 제작된 광도파로 소자의 압력광원은 각각 1550nm와 632.8nm이고, 코어와 클래딩의 굴절률차는 0.45 $\Delta$%로 설계 제작하였다. 센서부(상위 클래드)의 금 박막의 미소 굴절률 변화에 따른 TE, TM모드의 특성을 분석하였다. 센서의 보다 높은 감도 개선을 위한 나노-광자결정 구조가 주목받고 있는데, 광자결정 구조의 구현를 위한 리소그래피 공정은 높은 분해능과 신뢰성 있는 나노스케일의 공정이 요구된다. 광-바이오센서의 감도 개선을 위해 센서부 표면에 2차원 나노-광자결정 배열을 제안하고 이를 구현하기 위한 Dip-Pen Nanolithography 공정에 대해 고찰하였다.

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Synthesis and studies on novel Copper adenine MOF for $CO_2$ adsorption (이산화탄소 흡착용 구리 아데닌 MOF 합성 및 연구)

  • Ganesh, Mani;Hemalatha, Pushparaj;Peng, Mei Mei;Kim, Dae-Kyung;Jang, Hyun-Tae
    • Proceedings of the KAIS Fall Conference
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    • 2011.12a
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    • pp.357-360
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    • 2011
  • A new copper adenine MOF (Bio-MOF) was synthesized by hydrothermal procedure and explored for its low temperature $CO_2$ adsorption. In this adenine a DNA nucleotide was used as a ligand for Cu in DMF solution at $130^{\circ}C$. The synthesized Bio MOF was characterized by XRD, SEM, EDS, TG and BE Tresults. The material possesses high surface area (716.08 $m^2g^{-1}$) with mono dispersed particles of about 2.126 nm. The maximum $CO_2$ adsorption capacity is 5wt% at $50^{\circ}C$, which is regenerable at $100^{\circ}C$ which is very low when compared to other metal organic frame work studied. This study proves that the synthesized material is also be a choice materials for low temperature $CO_2$adsorption.

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Cellulosic Nanomaterial Production Via Fermentation by Komagataeibacter sp. SFCB22-18 Isolated from Ripened Persimmons

  • Park, Myung Soo;Jung, Young Hoon;Oh, Seung-Yoon;Kim, Min Ji;Bang, Won Yeong;Lim, Young Woon
    • Journal of Microbiology and Biotechnology
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    • v.29 no.4
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    • pp.617-624
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    • 2019
  • Bacterial nanocellulose (BNC) which is generally synthesized by several species of bacteria has a wide variety of industrial uses, particularly in the food and material industries. However, the low levels of BNC production during the fermentation process should be overcome to reduce its production cost. Therefore, in this study, we screened and identified a new cellulose-producing bacterium, optimized production of the cellulose, and investigated the morphological properties of the cellulosic materials. Out of 147 bacterial isolates from ripened fruits and traditional vinegars, strain SFCB22-18 showed the highest capacity for BNC production and was identified as Komagataeibacter sp. based on 16S rRNA sequence analysis. During 6-week fermentation of the strain using an optimized medium containing 3.0% glucose, 2.5% yeast extract, 0.24% acetic acid, 0.27% $Na_2HPO_4$, and 0.5% ethanol at $30^{\circ}C$, about 5 g/l of cellulosic material was produced. Both imaging and IR analysis proved that the produced cellulose would be nanoscale bacterial cellulose.

Development of Wheat Breeding Material Mediated wide Hybridization Response to Climate Change

  • Seong-Wook Kang;Ji-Yoon Han;Seong-Woo Cho
    • Proceedings of the Korean Society of Crop Science Conference
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    • 2022.10a
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    • pp.293-293
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    • 2022
  • This study is to develop new wheat breeding material through wide hybridization with wild species harboring useful characteristics such as salt, heat, and drought tolerance. Leymus mollis, wild rye was used to improve wheat genetic quality. L. mollis, is a perennial plant harboring tolerance against salt, heat, and drought because L. mollis distributes on the seaside. The F1 hybrids were produced by crossing between common wheat (Triticum aestivum L., Chinese Spring) and L. mollis. Genomic in situ hybridization revealed that the F1 hybrids have L. mollis genome. For the evaluation of salt and drought tolerance, seeds from the F2 were used. Under 2% NaCl solution, the F3 wheat-Leymus addition plants with salt tolerance showed more tillering and longer roots than other F3 plants without salt tolerance. Also, the F3 plants with salt tolerance showed better shallow-rooted than other F3 plants without salt tolerance. Finally, the F3 plants with salt tolerance made seed-setting under 2% NaCl condition, but other F3 plants without salt tolerance were not. Under drought conditions, the F3 plants with drought tolerance showed longer culm and spike length than other F3 plants without drought tolerance and even those of Chinese Spring under well-water conditions. We evaluated and selected the F3 plants with salt or drought tolerance for generation advancement.

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Varistor Application of Cr-doped ZnO-Sb2O3 Ceramics (Cr을 첨가한 ZnO-Sb2O3 세라믹스의 바리스터 응용)

  • Hong, Youn-Woo;Shin, Hyo-Soon;Yeo, Dong-Hun;Kim, Jin-Ho
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.23 no.11
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    • pp.854-858
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    • 2010
  • In this study, we have investigated the effects of Cr dopant on the sintering and electrical properties of ZnO-$Sb_2O_3$ (ZS) ceramics for varistor application. Spinel phases including $\alpha-$ and $\beta$-type was formed at ZS system and $\alpha$-spinel was stabilized by Cr doping in ZS system. Densification of ZS and ZSCr system was retarded to $1000^{\circ}C$ by the formation of spinel at $800^{\circ}C$. The morphology and its distribution of spinel phases in ZS system was homogeneous but disturbed by Cr doping. In ZSCr the densification of ZnO compared with ZS system was more retarded by low concentration of Zn interstitial defects induced by Cr doping in addition to the effect of spinel phase formation. The defects in each system were identified as attractive coulombic center (ZS: 0.13 eV, ZSCr: 0.12 eV) and singly charged oxygen vacancy $V_0^{\cdot}$ (ZSCr: 0.33 eV). In all ZS and ZSCr system have week varistor behavior by the formation of double Schottky barrier at grain boundary but its stability of barrier was very sensitive to sintering temperature.

Analysis of a.c. Characteristics in ZnO-Bi2O3-Mn3O4 Varistor Using Dielectric Functions (유전함수를 이용한 ZnO-Bi2O3-Mn3O4 바리스터의 a.c. 특성 분석)

  • Hong, Youn-Woo;Shin, Hyo-Soon;Yeo, Dong-Hun;Kim, Jin-Ho
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.23 no.12
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    • pp.936-941
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    • 2010
  • In this study, we have investigated the effects of Mn dopant on the bulk trap levels and grain boundary characteristics of $Bi_2O_3$-based ZnO (ZB) varistor using admittance spectroscopy and dielectric functions (such as $Z^*,\;Y^*,\;M^*,\;\varepsilon^*$, and $tan\delta$). Admittance spectra and dielectric functions show two bulk traps of $Zn_i^{..}$ (0.20 eV) and $V^{\bullet}_o$ (0.29~0.33 eV) in ZnO-$Bi_2O_3-Mn_3O_4$ (ZBM). The barrier of grain boundaries in ZBM could be electrochemically single type. However, its thermal stability was slightly disturbed by ambient oxygen because the apparent activation energy of grain boundaries was changed from 0.79 eV at lower temperature to 1.08 eV at higher temperature. The grain boundary capacitance $C_{gb}$ was decreased slightly with temperature as 1.3~1.8 nF but resistance $R_{gb}$ decreased exponentially. The relaxation time distribution can result from the heterogeneity of the barriers constituting the varistor. It is revealed that Mn dopant in ZB reduced the heterogeneity of the barrier in grain boundaries and stabilized the barrier against the ambient temperature.

Evaluation of Early-age Properties of Controlled Low Strength Material Using Non-destructive Testing (비파괴 기법을 이용한 유동성 채움재의 초기경화특성 평가)

  • Kim, Dong-Ju;Kim, Sang-Cheol;Han, WooJin;Lee, Jong-Sub;Byun, Yong-Hoon
    • Journal of The Korean Society of Agricultural Engineers
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    • v.62 no.2
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    • pp.31-38
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    • 2020
  • Controlled Low Strength Material (CLSM) has high fluidity and self-compaction characteristics. CLSM is mainly used for backfilling the excavated road. Early-age properties of CLSM should be characterized for fast restoration of the road. In this study, shear wave monitoring and Vicat needle test are performed to investigate the early-age properties of CLSM depending on the setting time. CLSM consists of CSA cement, fly ash, silt and sand, accelerator, and water. Five fly ashes with different chemical properties are used for CLSM samples. The penetration of CLSM along setting time is obtained through the Vicat needle test. A pair of bender elements are placed in a mold for shear wave measurement, and the change in shear waves with the setting time is monitored. The experimental results show that, regardless of the type of fly ash, the penetration depth decreases and the shear wave velocity increases with the setting time. Depending on the type of fly ash, initial and final times and shear wave velocity change. After testing, the correlation between penetration and shear wave velocity is obtained with high coefficient of determination. The shear wave measurement technique using the bender element can be used to identify early-age properties.

Analysis of a.c. Characteristics in ZnO-Bi2O3Cr2O3 Varistor using Dielectric Functions (유전함수를 이용한 ZnO-Bi2O3Cr2O3 바리스터의 a.c. 특성 분석)

  • Hong, Youn-Woo;Shin, Hyo-Soon;Yeo, Dong-Hun;Kim, Jin-Ho
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.23 no.5
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    • pp.368-373
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    • 2010
  • In this study, we have investigated the effects of Cr dopant on the bulk trap levels and grain boundary characteristics of $Bi_2O_3$-based ZnO (ZB) varistor using admittance spectroscopy and dielectric functions (such as $Z^*,\;Y^*,\;M^*,\;{\varepsilon}^*$, and $tan{\delta}$). Admittance spectra show more than two bulk traps of $Zn_i$ and $V_o$ probably in different ionization states in ZnO-$Bi_2O_3-Cr_2O_3$ (ZBCr) system. Three kinds of temperature-dependant activation energies ($E_{bt}'s$) were calculated as 0.11~0.14 eV of attractive coulombic center, 0.16~0.17 eV of $Zn_{\ddot{i}}$, and 0.33 eV of $V_o^{\cdot}$ as dominant bulk defects. The grain boundaries of ZBCr could be electrochemically divided into two types as a sensitive to ambient oxygen i.e. electrically active one and an oxygen-insensitive i.e. electrically inactive one. The grain boundaries were electrically single type under 460 K (equivalent circuit as parallel $R_{gb1}C_{gb1}$) but separated as double one ($R_{gb1}C_{gb1}-R_{gb2}C_{gb2}$) over 480 K. It is revealed that the dielectric functions are very useful tool to separate the overlapped bulk defect levels and to characterize the electrical properties of grain boundaries.