• Journal of the Institute of Electronics Engineers of Korea SD
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• v.45 no.1
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• pp.56-63
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• 2008

This paper describes a 12 bit 1GS/s current mode segmented DAC for WCDMA communication. The proposed circuit in this paper employes segmented structure which consists of 4bit binary weighted structure in the LSB and 4bit thermometer decoder structure in the mSB and MSB. The proposed DAC uses delay time compensation circuits in order to suppress performance decline by delay time in segmented structure. The delay time compensation circuit comprises of phase frequency detector, charge pump, and control circuits, so that suppress delay time by binary weighted structure and thermometer decoder structure. The proposed DAC uses CMOS $0.18{\mu}m$ 1-poly 6-metal n-well process, and measured INL/DNL are below ${\pm}0.93LSB/{\pm}0.62LSB$. SFDR is approximately 60dB and SNDR is 51dB at 1MHz input frequency. Single DAC's power consumption is 46.2mW.

• Nano
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• v.13 no.11
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• pp.1850130.1-1850130.12
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• 2018

A novel strontium titanate/binary metal sulfide ($SrTiO_3/SnCoS_4$) heterostructure was synthesized by a simple two-step hydrothermal method. The visible-light-driven photocatalytic performance of $SrTiO_3/SnCoS_4$ composites was evaluated in the degradation of methyl orange (MO) under visible light irradiation. The photocatalytic performance of $SrTiO_3/SnCoS_4-5%$ is much higher than that of pure $SrTiO_3$, $SnCoS_4$, $SrTiO_3/SnS_2$ and $SrTiO_3/CoS_2$. The $SrTiO_3/SnCoS_4$ composite material with 5 wt.% of $SnCoS_4$ showed the highest photocatalytic efficiency for MO degradation, and the degradation rate could reach 95% after 140 min irradiation time. The enhanced photocatalytic activity was ascribed to not only the improvement of visible light absorption efficiency, but also the construction of a heterostructure which make it possible to effectively separate photoexcited electrons and holes in the two-phase interface.

• Transactions on Electrical and Electronic Materials
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• v.17 no.3
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• pp.146-149
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• 2016

The CrN/TiN/Al thin films for solar selective absorber were prepared by dc reactive magnetron sputtering with multi targets. The binary nitride CrN layer deposited with change in N₂ gas flow rates. The gas mixture of Ar and N2 was an important parameter during sputtering deposition because the metal volume fraction (MVF) was controlled by the N2 gas flow rate. In this study, the crystallinity and surface properties of the CrN/TiN/Al thin films were estimated by X-ray diffraction (XRD), atomic force microscopy (AFM) and field emission scanning electron microscopy (FESEM). The composition and depth profile of thin films were investigated using Auger electron spectroscopy (AES). The absorptance and reflectance with wavelength spectrum were recorded by UV-Vis-NIR spectrophotometry at a range of 300~1,100 nm.

• JSTS:Journal of Semiconductor Technology and Science
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• v.3 no.4
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• pp.211-216
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• 2003

This work describes a 3 V 12b 100 MS/s CMOS digital-to-analog converter (DAC) for high-speed communication system applications. The proposed DAC is composed of a unit current-cell matrix for 8 MSBs and a binary-weighted array for 4 LSBs, trading-off linearity, power consumption, chip area, and glitch energy with this process. The low-glitch switch driving circuits are employed to improve linearity and dynamic performance. Current sources of the DAC are laid out separately from the current-cell switch matrix core block to reduce transient noise coupling. The prototype DAC is implemented in a 0.35 um n-well single-poly quad-metal CMOS technology and the measured DNL and INL are within ${\pm}0.75$ LSB and ${\pm}1.73$ LSB at 12b, respectively. The spurious-free dynamic range (SFDR) is 64 dB at 100 MS/s with a 10 MHz input sinewave. The DAC dissipates 91 mW at 3 V and occupies the active die area of $2.2{\;}mm{\;}{\times}{\;}2.0{\;}mm$

• The Bulletin of The Korean Astronomical Society
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• v.35 no.2
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• pp.72.2-72.2
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• 2010

The extremely metal-poor halo planetary nebula BoBn 1 has been investigated based on IUE archive data, Subaru/HDS spectra, VLT/UVES archive data, and Spitzer/IRS spectra. We have measured a heliocentric radial velocity of $+191.6\pm1.3\;kms^{-1}$ and expansion velocity 2Vexp of $40.5\pm3.3\;kms^{-1}$ from an average over 300 lines. The estimations of C, N, O, and Ne abundances from the optical recombination lines (ORLs) and Kr, Xe, and Ba from the collisional excitation lines (CELs) are also done. We have detected 5 fluorine and several slow neutron capture elements (the s-process). The amounts of [F/H], [Kr/H], and [Xe/H] suggest that BoBn 1 is the most F-rich among F detected PNe and is a heavy s-process element rich PN. The photo-ionization models built with non-LTE theoretical stellar atmospheres indicate that the progenitor was a 1-1.5 $M_\bigstar$ that would evolve into a white dwarf with an $0.62M_{\odot}$ core mass and $0.09M_{\odot}$ ionized nebula. Careful examination implies that BoBn 1 has evolved from a binary and experienced coalescence during the evolution to become a visible PN. The elemental abundances except N could be explained by a binary model composed of $0.75M_{\odot}+1.5M_{\odot}$ stars.

• Journal of the Korean Society of Safety
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• v.14 no.1
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• pp.78-85
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• 1999

The removal characteristics of H$_2$S from IGCC process over the natural manganese ore(NMO) containing several metal oxides($MnO_x$ : 51.85%, $FeO_y$ : 3.86%, CaO : 0.11%) were carried out in a batch type fluidized bed reactor(I.D.=40mm, height=0.8m). The $H_2S$ breakthrough curves were obtained as a function of temperature, initial gas velocity, initial gas concentration, and aspect ratio. The effect of particle size ratio and particle mixing fraction on $H_2S$ removal were investigated with binary system of different particle size. From this study, the adsorption capacity of $H_2S$ increased with temperature but decreased with excess gas velocity. The breakthrough time for $H_2S$ is reduced as the gas velocity is increased which leaded to gas by-passing and gas-solid contacting in a fluidized bed reactor. The results of the binary particle system with different size in batch experimental could predict to improve the behavior of continuous process of $H_2S$ removal efficiency. The natural manganese ore could be considered as potential sorbent in $H_2S$ removal.

• Journal of Welding and Joining
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• v.13 no.3
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• pp.134-146
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• 1995

Aluminium nitride(AlN) is currently under investigation as potential candidate for replacing alumium oxide(Al$_{2}$ $O_{3}$) as a substrate material for for electronic circuit packaging. Brazing of aluminium nitride(AlN) to Cu with Ag base active alloy containing Ti has been investigated in vacuum. Binary Ag$_{98}$ $Ti_{2}$(AT) and ternary At-1wt.%Al(ATA), AT-1wt.%Ni(ATN), AT-1wt.% Mn(ATM) alloys showed good wettability to AlN and led to the development of strong bond between brate alloy and AlN ceramic. The reaction between AlN and the melted brazing alloys resulted in the formation of continuous TiN layers at the AlN side iterface. This reaction layer was found to increase by increase by increasing brazing time and temperature for all filler metals. The bond strength, measured by 4-point bend test, was increased with bonding temperature and showed maximum value and then decreased with temperature. It might be concluded that optimum thickness of the reaction layer was existed for maximum bond strength. The joint brazed at 900.deg.C for 1800sec using binary AT alloy fractured at the maximum load of 35kgf which is the highest value measured in this work. The failure of this joint was initiated at the interface between AlN and TiN layer and then proceeded alternately through the interior of the reaction layer and AlN ceramic itself.

• Korean Journal of Materials Research
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• v.11 no.9
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• pp.733-739
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• 2001

In Al-25Nb binary system, it was observed only formation of $D0_{22}$ $Al_3Nb$ intermetallic compound after 5hr milling but it was not observed formation of meta stable phase like L1$_2$ phase. In this state, $D0_{22}$ $Al_3Nb$ fabricated had nano sized grain of approximately 20nm. Ternary systems, transition metals such as Cr, Cu, Fe, Mn were added 6~12at.% as substitution of Al, showed formation of $D0_{22}$ $Al_3Nb$ like Al-25Nb binary system. In Al- l2Cu-25Nb system, it was observed that broad XRD pattern like amorphization of Al and not observed formation of $D0_{22}$ $Al_3Nb$ after 5hr milling. But there was mixed phase of a lot of amorphous Al and little $D0_{22}$ $Al_3Nb$ through TEM. In the states of unalloyed, 5~7hr milling time, those showed exothermic reaction at 35$0^{\circ}C$, which was formation of $D0_{22}$ $Al_3Nb$ like Al-25Nb binary system. With increasing milling time to 10hr, $D0_{22}$ $Al_3Nb$ was transformed to mixed phase of amorphous and nanocryatlline, having approximately 10nm grain but the meta stable $Al_3Nb$ was not fabricated by adding transition metals.

• Journal of the Korean Chemical Society
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• v.25 no.5
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• pp.300-305
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• 1981

The soy bean oil cakes and perillar oil cakes are phosphorylated and sulfonated to be used as ion exchangers. There 40-60mesh cations exchanges have bean tested on the capacity of ion exchange, the adsorption and distribution coefficients of several metal ions in various concentrations of binary solution mixture, hydrochloric acid and alcohol. From there experiments, the following results are concluded. The ion exchange capacity of ion exchangers are higher than 4 meq/g. The adsorption of metal ions on ion exchangers are increased generally as pH is increased, especially Co(II) on sulfonated soy bean oil cake. The distribution coefficients of various metal ions are decreased as the number of branches of carbon and hydroxyl groups are increased. There show that the stereo-isomerism of alkyl group or attraction of ligand have influenced upon various metal ions. Consequently it is deduced that there ion exchanges from soy bean oil cake and perillar oil cake resemble in properties to current ion exchangers.

• Korean Journal of Materials Research
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• v.34 no.3
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• pp.170-174
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• 2024

In this study, we report the microstructural evolution and shear strength of an Sn-Sb alloy, used for die attach process as a solder layer of backside metal (BSM). The Sb content in the binary system was less than 1 at%. A chip with the Sn-Sb BSM was attached to a Ag plated Cu lead frame. The microstructure evolution was investigated after die bonding at 330 ℃, die bonding and isothermal heat treatment at 330 ℃ for 5 min and wire bonding at 260 ℃, respectively. At the interface between the chip and lead frame, Ni₃Sn₄ and Ag₃Sn intermetallic compounds (IMCs) layers and pure Sn regions were confirmed after die bonding. When the isothermal heat treatment is conducted, pure Sn regions disappear at the interface because the Sn is consumed to form Ni₃Sn₄ and Ag₃Sn IMCs. After the wire bonding process, the interface is composed of Ni₃Sn₄, Ag₃Sn and (Ag,Cu)₃Sn IMCs. The Sn-Sb BSM had a high maximum shear strength of 78.2 MPa, which is higher than the required specification of 6.2 MPa. In addition, it showed good wetting flow.