• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.367-367
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• 2012

We investigate Landau level spectra of twisted bilayer graphene under a perpendicular magnetic field, showing that the layers provide rich electronic structure depending on misoriented angle. New types of excitations with Landau level sequences due to the reflection of interlayer coupling level are matter of interest in the present work. We calculate the electronic structure of bilayer systems with a relative small angle rotation of the two graphene layers. Calculated Landau level spectra for twisted bilayer graphene using a continuum formulation are in good agreement with existing experimental and theoretical studies. Twist angle dependent numerical simulations provide significant insights for the nature of the Landau level spectra in bilayer graphene, combining signals from both massive and massless Dirac fermions. We finally discuss the influence of the graphene layers in the experimental sample that related to the magneto-transport measurements including quantum Hall conductance.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2015년도 제49회 하계 정기학술대회 초록집
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• pp.239.2-239.2
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• 2015

Graphene is a most interesting material due to its unique and outstanding properties. However, semi-metallic properties of graphene along with zero bandgap energy structure limit further application to optoelectronic devices. Recently, many researchers have shown that band gap can be induced in the Bernal stacked bilayer graphene. Several methods have been used for the controlled growth of the Bernal staked bilayer graphene, but it is still challenging to control the growth process. In this paper, we synthesize the large area Bernal stacked bilayer graphene using multi heating zone low pressure chemical vapor deposition (LPCVD). The synthesized bilayer graphenes are characterized by Raman spectroscopy, optical microscope (OM), scanning electron microscopy (SEM). High resolution transmission electron microscopy (HRTEM) is used for the observation of atomic resolution image of the graphene layers.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2010년도 제39회 하계학술대회 초록집
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• pp.267-267
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• 2010

The continuous change in the electronic band structure of metal-adsorbed bilayer graphene was calculated as a function of metal coverage using first-principles calculations. Instead of modifying the unit cell size as a function of metal coverage, the distance between the metal atoms and bilayer graphene in the same $2{\times}2$ unit unit cell was controlled to change the total charges transferred from the metal atoms to bilayer graphene. The validity of the theoretical method was confirmed by reproducing the continuous change in the electronic band structure of K-adsorbed epitaxial bilayer graphene, as shown by Ohta et al. [Science 313, 951 (2006)]. In addition, the changes in the electronic band structures of undoped, n-type, and p-type bilayer graphene were studied schematically as a function of metal coverage using the theoretical method.

• Applied Microscopy
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• 제42권4호
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• pp.218-222
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• 2012

Modern aberration-corrected transmission electron microscope (TEM) with appropriate electron beam energy is able to achieve atomic resolution imaging of single and bilayer graphene sheets. Especially, atomic configuration of bilayer graphene with a rotation angle can be identified from the direct imaging and phase reconstructed imaging since atomic resolution Moir$\acute{e}$ pattern can be obtained successfully at atomic scale using an aberration-corrected TEM. This study boosts a reliable stacking order analysis, which is required for synthesized or artificially prepared multilayer graphene, and lets graphene researchers utilize the information of atomic configuration of stacked graphene layers readily.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.13-13
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• 2011

Graphene based nano-electronic and nano-electromechanical devices will be introduced in this presentation. The first part of the presentation will be covered by our recent results on the fabrication and physical properties of artificially twisted bilayer graphene. Thanks to the recently developed contact transfer printing method, a single layer graphene sheet is stacked on various substrates/nano-structures in a controlled manner for fabricating e.g. a suspended graphene device, and single-bilayer hybrid junction. The Raman and electrical transport results of the artificially twisted bilayer indicates the decoupling of the two graphene sheets. The graphene based electromechanical devices will be presented in the second part of the presentation. Carbon nanotube based nanorelay and A new concept of non-volatile memory based on the carbon nanotube field effect transistor together with microelectromechanical switch will be briefly introduced at first. Recent progress on the graphene based nano structures of our group will be presented. The array of graphene resonators was fabricated and their mechanical resonance properties are discussed. A novel device structures using carbon nanotube field effect transistor combined with suspended graphene gate will be introduced in the end of this presentation.

• Advances in nano research
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• 제12권5호
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• pp.529-547
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• 2022

Graphene is one of the strongest, stiffest, and lightest nanoscale materials known to date, making it a potentially viable and attractive candidate for developing lightweight structural composites to prevent high-velocity ballistic impact, as commonly encountered in defense and space sectors. In-plane twist in bilayer graphene has recently revealed unprecedented electronic properties like superconductivity, which has now started attracting the attention for other multi-physical properties of such twisted structures. For example, the latest studies show that twisting can enhance the strength and stiffness of graphene by many folds, which in turn creates a strong rationale for their prospective exploitation in high-velocity impact. The present article investigates the ballistic performance of twisted bilayer graphene (tBLG) nanostructures. We have employed molecular dynamics (MD) simulations, augmented further by coupling gaussian process-based machine learning, for the nanoscale characterization of various tBLG structures with varying relative rotation angle (RRA). Spherical diamond impactors (with a diameter of 25Å) are enforced with high initial velocity (V_i) in the range of 1 km/s to 6.5 km/s to observe the ballistic performance of tBLG nanostructures. The specific penetration energy (E_p^*) of the impacted nanostructures and residual velocity (V_r) of the impactor are considered as the quantities of interest, wherein the effect of stochastic system parameters is computationally captured based on an efficient Gaussian process regression (GPR) based Monte Carlo simulation approach. A data-driven sensitivity analysis is carried out to quantify the relative importance of different critical system parameters. As an integral part of this study, we have deterministically investigated the resonant behaviour of graphene nanostructures, wherein the high-velocity impact is used as the initial actuation mechanism. The comprehensive dynamic investigation of bilayer graphene under the ballistic impact, as presented in this paper including the effect of twisting and random disorder for their prospective exploitation, would lead to the development of improved impact-resistant lightweight materials.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.125-125
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• 2012

Graphene was epitaxially grown on a 6H-SiC(0001) substrate by thermal decomposition of SiC under ultrahigh vacuum conditions. Using scanning tunneling microscopy (STM), we monitored the evolution of the graphene growth as a function of the temperature. We found that the evaporation of Si occurred dominantly from the corner of the step rather than on the terrace. A carbon-rich $(6{\sqrt{3}}{\times}6{\sqrt{3}})R30^{\circ}$ layer, monolayer graphene, and bilayer graphene were identified by measuring the roughness, step height, and atomic structures. Defect structures such as nanotubes and scattering defects on the monolayer graphene are also discussed. Furthermore, we confirmed that the Dirac points (ED) of the monolayer and bilayer graphene were clearly resolved by scanning tunneling spectroscopy (STS).

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.11-11
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• 2011

In this talk, I will discuss roles of pseudo vector and scalar potential in changing physical properties of graphene systems. First, graphene under small uniaxial strain is shown to be described by the generalized Weyl's Hamiltonian with inclusion of pseudo vector and scalar potential simultaneously [1]. Thus, strained graphene is predicted to exhibit velocity anisotropy as well as work function enhancement without any gap. Second, if homogeneous strains with different strengths are applied to each layer of bilayer graphene, transverse electric fields across the two layers can be generated without any external electronic sources, thereby opening an energy gap [2]. This phenomenon is made possible by generation of inequivalent pseudo scalar potentials in the two graphene layers. Third, when very tiny lateral interlayer shift occurs in bilayer graphene, the Fermi surfaces of the system are shown to undergo Lifshitz transition [3]. We will show that this unexpected hypersensitive electronic topological transition is caused by a unique interplay between the effective non-Abelian vector potential generated by sliding motions and Berry's phases associated with massless Dirac electrons.

• Applied Microscopy
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• 제40권1호
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• pp.21-28
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• 2010

단층 및 복층의 그래핀에 대한 원자분해 투과전자현미경 영상 시뮬레이션 연구에서, 통상의 Boch-wave 방법에 의한 영상이론식들이 고 준위 Laue 영역의 역 격자 회절을 적절히 포함 했을 때 시뮬레이션에 잘 적용될 수 있음을 보여 주었다. 적절한 조건에서 복층 그래핀의 시뮬레이션 영상들은 육방정계의 대칭성 보다는 삼방정계의 대칭성을 보여 주었다. 이 결과는 복층 그래핀이 3차원 공간에서 [0001] 축 방향 회전에 대해 갖는 삼방정계의 격자 대칭성이 영상에 구현되는 것으로 이해될 수 있다. 단층 그래핀에 대해서는, 관측 위상영상이 삼방정계의 대칭성을 보여주는 현상들이 특히 주목되었다. 이 현상은 그래핀 표면에 전자 밀도의 재 배치에 의한 것으로 설명되었다. 그리고 그래핀의 전자 재 배치를 반영하는, 다만 2번째 Laue 준위 영역의 회절 빔까지만 포함하면 관측 영상과 일치하는 시뮬레이션 위상 영상이 얻어졌다.

• Journal of Electrochemical Science and Technology
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• 제7권3호
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• pp.185-189
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• 2016

The coupled channel method via the Local Reflection (LORE) matrix is employed to investigate the quantum mechanical behavior of the sticking or adsorption and desorption of hydrogen (H) atom on bilayer graphene via the armchair edge. The sticking and desorption probabilities of H are calculated and are plotted against the initial translational energy of H. The sticking probability plot shows a barrierless reaction indicating that hydrogen is easily adsorbed on the armchair edge of graphene. The desorption probability plot, however, shows that desorption of H from the graphene sheets is an activated process with a barrier height of 4.19 eV suggesting that a strong bond exists between the adsorbed H atom and the edge carbon atom. Thus, temperatures higher than the operating temperatures (300 - 1500 K) of conventional fuel cells are necessary to release the adsorbed H atom from the armchair edge of graphene.