• Journal of the Institute of Electronics and Information Engineers
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• v.49 no.9
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• pp.55-64
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• 2012

Until now, Side Channel Attack has been known to be effective to crack decrypt key such as smart cards, electronic passports and e-ID card based on Chip. Combination of Masking and shuffling methods have been proposed practical countermeasure. Newly, S.Tillich suggests biased-mask using template attack(TA) to attack AES with masking and shuffling. However, an additional assumption that is acquired template information previously for masking value is necessary in order to apply this method. Moreover, this method needs to know exact time position of the target masking value for higher probability of success. In this paper, we suggest new practical method called Biasing Power Analysis(BPA) to find a secret key of AES based on masking-shuffling method. In BPA, we don't use time position and template information from masking value. Actually, we do experimental works of BPA attack to 128bit secret key of AES based on masking-shuffling method performed MSP430 Chip and we succeed in finding whole secret key. The results of this study will be utilized for next-generation ID cards to verify physical safety.

• Transactions of the Korean Society for Noise and Vibration Engineering
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• v.20 no.12
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• pp.1200-1209
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• 2010

The main subject of this paper is to develop analytic method with which output power or sensitivity variations of a magnetostrictive ultrasonic transducer can be estimated with no aid of experiments. After the bias magnetic field deployed over the patch is calculated using finite element analysis for magnetostatics, the representative value is extracted by averaging these field values. The operating point on the characteristic curve for magnetostriction is identified by this value and then the output performance is calculated from it. It is verified that the results from this simple model match well with those of its experimental version and some limits of this modeling technique are also considered.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.25 no.2
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• pp.183-188
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• 2014

In this paper, the propagation effect of power supply uncertainty on the output of class-F power amplifier has been estimated. Also, a 1.9 GHz, 10 watt class-F power amplifier was measured to verify the estimation and to find the optimal biasing point. By approximating the propagation theory of uncertainties, the propagation effect of bias uncertainty was mathmatically calculated. As a result, the DC biases have propagated uncertainties of 15~70 mW. However, at the optimized bias point, the uncertainty in the output power could be dropped less than 15 mW while the output power has dropped by 0.37 dB.

• Journal of Power Electronics
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• v.14 no.3
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• pp.444-457
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• 2014

This paper presents the design and realization of a digital PV simulator with a Push-Pull Forward (PPF) circuit based on the principle of modular hardware and configurable software. A PPF circuit is chosen as the main circuit to restrain the magnetic biasing of the core for a DC-DC converter and to reduce the spike of the turn-off voltage across every switch. Control and I/O interface based on a personal computer (PC) and multifunction data acquisition card, can conveniently achieve the data acquisition and configuration of the control algorithm and interface due to the abundant software resources of computers. In addition, the control program developed in Matlab/Simulink can conveniently construct and adjust both the models and parameters. It can also run in real-time under the external mode of Simulink by loading the modules of the Real-Time Windows Target. The mathematic models of the Push-Pull Forward circuit and the digital PV simulator are established in this paper by the state-space averaging method. The pole-zero cancellation technique is employed and then its controller parameters are systematically designed based on the performance analysis of the root loci of the closed current loop with $k_i$ and $R_L$ as variables. A fuzzy PI controller based on the Takagi-Sugeno fuzzy model is applied to regulate the controller parameters self-adaptively according to the change of $R_L$ and the operating point of the PV simulator to match the controller parameters with $R_L$. The stationary and dynamic performances of the PV simulator are tested by experiments, and the experimental results show that the PV simulator has the merits of a wide effective working range, high steady-state accuracy and good dynamic performances.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.472-472
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• 2011

The capacitive coupled plasma (CCP) has been extensively used in the semiconductor industry because it has not only good uniformity, but also low electron temperature. But CCP source has some problems, such as difficulty in varying the ion bombardment energy separately, low plasma density, and high processing pressure, etc. In this reason, dual frequency CCP has been investigated with a separate substrate biasing to control the plasma parameters and to obtain high etch rate with high etch selectivity. Especially, in this study, we studied on the etching of $SiO_2$ by using the pulse-time modulation in the dual-frequency CCP source composed of 60 MHz/ 2 MHz rf power. By using the combination of high /low rf powers, the differences in the gas dissociation, plasma density, and etch characteristics were investigated. Also, as the size of the semiconductor device is decreased to nano-scale, the etching of contact hole which has nano-scale higher aspect ratio is required. For the nano-scale contact hole etching by using continuous plasma, several etch problems such as bowing, sidewall taper, twist, mask faceting, erosion, distortions etc. occurs. To resolve these problems, etching in low process pressure, more sidewall passivation by using fluorocarbon-based plasma with high carbon ratio, low temperature processing, charge effect breaking, power modulation are needed. Therefore, in this study, to resolve these problems, we used the pulse-time modulated dual-frequency CCP system. Pulse plasma is generated by periodical turning the RF power On and Off state. We measured the etch rate, etch selectivity and etch profile by using a step profilometer and SEM. Also the X-ray photoelectron spectroscopic analysis on the surfaces etched by different duty ratio conditions correlate with the results above.