• Title/Summary/Keyword: Bias-stress

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A Production and Analysis on High Quality of Thin Film Transistors Using NH3 Plasma Treatment (NH3 Plasma Treatment를 사용한 고성능 TFT 제작 및 분석)

  • Park, Heejun;Nguyen, Van Duy;Yi, Junsin
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.30 no.8
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    • pp.479-483
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    • 2017
  • The effect of $NH_3$ plasma treatment on device characteristics was confirmed for an optimized thin film transistor of poly-Si formed by ELA. When C-V curve was checked for MIS (metal-insulator-silicon), Dit of $NH_3$ plasma treated and MIS was $2.7{\times}10^{10}cm^{-2}eV^{-1}$. Also in the TFT device case, it was decreased to the sub-threshold slope of 0.5 V/decade, 1.9 V of threshold voltage and improved in $26cm^2V^{-1}S^{-1}$ of mobility. Si-N and Si-H bonding reduced dangling bonding to each interface. When gate bias stress was applied, the threshold voltage's shift value of $NH_3$ plasma treated device was 0.58 V for 1,000s, 1.14 V for 3,600s, 1.12 V for 7,200s. As we observe from this quality, electrical stability was also improved and $NH_3$ plasma treatment was considered effective for passivation.

Stability of Organic Thin-Film Transistors Fabricated by Inserting a Polymeric Film (고분자막을 점착층으로 사용한 유기 박막 트랜지스터의 안정성)

  • Hyung, Gun-Woo;Pyo, Sang-Woo;Kim, Jun-Ho;Kim, Young-Kwan
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2006.06a
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    • pp.61-62
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    • 2006
  • In this paper, it was demonstrated that organic thin- film transistors (OTFTs) were fabricated with the organic adhesion layer between an organic semiconductor and a gate insulator by vapor deposition polymerization (VDP) processing. In order to form polymeric film as an adhesion layer, VDP process was also introduced instead of spin-coating process, where polymeric film was co-deposited by high-vacuum thermal evaporation from 6FDA and ODA followed by curing. The saturated slop in the saturation region and the subthreshold nonlinearity in the triode region were c1early observed in the electrical output characteristics in our organic thin film transistors using the staggered-inverted top-contact structure. Field effect mobility, threshold voltage, and on-off current ratio in 15-nm-thick organic adhesion layer were about $0.5\;cm^2/Vs$, -1 V, and $10^6$, respectively. We also demonstrated that threshold voltage depends strongly on the delay time when a gate voltage has been applied to bias stress.

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Dependency of the Device Characteristics on Plasma Nitrided Oxide for Nano-scale PMOSFET (Nano-scale PMOSFET에서 Plasma Nitrided Oixde에 대한 소자 특성의 의존성)

  • Han, In-Shik;Ji, Hee-Hwan;Goo, Tae-Gyu;You, Ook-Sang;Choi, Won-Ho;Park, Sung-Hyung;Lee, Heui-Seung;Kang, Young-Seok;Kim, Dae-Byung;Lee, Hi-Deok
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.20 no.7
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    • pp.569-574
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    • 2007
  • In this paper, the reliability (NBTI degradation: ${\Delta}V_{th}$) and device characteristic of nano-scale PMOSFET with plasma nitrided oxide (PNO) is characterized in depth by comparing those with thermally nitrided oxide (TNO). PNO case shows the reduction of gate leakage current and interface state density compared to TNO with no change of the $I_{D.sat}\;vs.\;I_{OFF}$ characteristics. Gate oxide capacitance (Cox) of PNO is larger than TNO and it increases as the N concentration increases in PNO. PNO also shows the improvement of NBTI characteristics because the nitrogen peak layer is located near the $Poly/SiO_2$ interface. However, if the nitrogen concentration in PNO oxide increases, threshold voltage degradation $({\Delta}V_{th})$ becomes more degraded by NBT stress due to the enhanced generation of the fixed oxide charges.

$SiO_2$, SiNx 절역막에 따른 ITZO 박막 트랜지스터의 게이트 바이어스 스트레스 신뢰성 연구

  • Kim, Sang-Seop;Kim, Sun-Gon;Choe, Byeong-Deok
    • Proceedings of the Korean Vacuum Society Conference
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    • 2013.08a
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    • pp.242.2-242.2
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    • 2013
  • 최근 산화물 반도체 박막 트랜지스터의 신뢰성(reliability) 평가에 대한 연구가 활발히 이루어지고 있다. 신뢰성 평가하는 한 방법으로 게이트에 바이어스를 지속적으로 인가하여 소자의 문턱 전압의 변화를 통해 안정성(stability)를 확인한다. 전압을 지속적으로 인가하게 되면 소자를 열화시켜 전기적 특성이 약화된다. 본 연구에선 ITZO 박막 트랜지스터의 신뢰성 평가를 위해 게이트 절연막($SiO_2$, $SiN_x$)에 따른 ITZO 소자를 제작 및 게이트 바이어스 스트레스 후 전기적 특성을 비교, 분석하였다. 제작된 소자의 게이트에 전압을 +15V로 7200초 동안 인가하였다. 스트레스 후 게이트 절연막이 $SiO_2$, $SiN_x$인 ITZO 산화물 박막 트랜지스터 모두 positive 방향으로 이동하였고, 그 결과 문턱 전압, 이동도, 아문턱 기울기의 변화가 발생하였다. $SiO_2$의 경우 아문턱 기울기의 변화가 거의 없이 문턱 전압의 변화만을 보였고, 이는 단순히 ITZO층과 게이트 절연막 계면에 전자가 포획되거나 혹은 게이트 절연막 내에 전자가 주입이 되었기 때문이다. 반면에 $SiN_x$의 경우 ITZO층과 게이트 절연막 계면에 추가적인 결함(defect)이 생성되었기 때문에 $SiO_2$보다 더 많은 전자를 포획하여 아문턱 기울기와 문턱 전압의 변화가 컸다.

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Effects of nonpharmacological interventions on the psychological health of high-risk pregnant women: a systematic review and meta-analysis

  • Yoo, Hyeji;Ahn, Sukhee
    • Women's Health Nursing
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    • v.27 no.3
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    • pp.180-195
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    • 2021
  • Purpose: This study aimed to summarize the current evidence on the effects of nonpharmacological interventions on psychological health outcomes for women with high-risk pregnancies due to conditions such as preeclampsia, gestational diabetes, or preterm labor. Methods: The following databases were searched from January 2000 to December 2020: PubMed, Ovid Embase, CINAHL, Web of Science, DBpia, RISS, and KISS. Two investigators independently reviewed and selected articles according to the inclusion/exclusion criteria. RoB 2 and the ROBINS-I checklist were used to evaluate study quality. Results: Twenty-nine studies with a combined total of 1,806 pregnant women were included in the systematic review and meta-analysis. Psychological health improvements were found in women with preeclampsia (Hedges' g=-0.67; 95% confidence interval [CI], -0.91 to -0.44), gestational diabetes (Hedges' g=-0.38; 95% CI, -0.54 to -0.12), and preterm labor (Hedges' g=-0.73; 95% CI, -1.00 to -0.46). The funnel plot was slightly asymmetrical, but the fail-safe N value and the trim-and-fill method showed no publication bias. Conclusion: Nonpharmacological interventions for women with high-risk pregnancies due to conditions such as preeclampsia, gestational diabetes, and preterm labor can improve psychological parameters such as anxiety, stress, and depression. Nurses can play a pivotal role in the nursing management of pregnant women with high-risk conditions and apply various types of nonpharmacological interventions to meet their needs in uncertain and anxious times during pregnancy.

Analysis of Impact of Climate Change on River Flows in an Agricultural Watershed Using a Semi-distributed Watershed Model STREAM (준분포형 유역모델 STREAM을 이용한 기후변화가 농업유역의 하천유량에 미치는 영향 분석)

  • Jeong, Euisang;Cho, Hong-Lae
    • Journal of Korean Society on Water Environment
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    • v.35 no.2
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    • pp.131-144
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    • 2019
  • Climate Change affects the hydrological cycle in agricultural watersheds through rising air temperature and changing rainfall patterns. Agricultural watersheds in Korea are characterized by extensive paddy fields and intensive water use, a resource that is under stress from the changing climate. This study analyzed the effects of climate change on river flows for Geum Cheon and Eun-San Choen watershed using STREAM, a semi-distributed watershed model. In order to evaluate the performance and improve the reliability of the model, calibration and validation of the model was done for one flow observation point and three reservoir water storage ratio points. Climate change scenarios were based on RCP data provided by the Korea Meteorological Administration (KMA) and bias corrections were done using the Quantile Mapping method to minimize the uncertainties in the results produced by the climate model to the local scale. Because of water mass-balance, evapotranspiration tended to increase steadily with an increase in air temperature, while the increase in RCP 8.5 scenario resulted in higher RCP 4.5 scenario. The increase in evapotranspiration led to a decrease in the river flow, particularly the decrease in the surface runoff. In the paddy agricultural watershed, irrigation water demand is expected to increase despite an increase in rainfall owing to the high evapotranspiration rates occasioned by climate change.

Large Size and High Resolution Organic Light Emitting Diodes Based on the In-Ga-Zn-O Thin Film Transistors with a Coplanar Structure

  • Hong Jae Shin
    • Korean Journal of Materials Research
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    • v.33 no.12
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    • pp.511-516
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    • 2023
  • Amorphous In-Ga-Zn-O (a-IGZO) thin film transistors (TFTs) with a coplanar structure were fabricated to investigate the feasibility of their potential application in large size organic light emitting diodes (OLEDs). Drain currents, used as functions of the gate voltages for the TFTs, showed the output currents had slight differences in the saturation region, just as the output currents of the etch stopper TFTs did. The maximum difference in the threshold voltages of the In-Ga-Zn-O (a-IGZO) TFTs was as small as approximately 0.57 V. After the application of a positive bias voltage stress for 50,000 s, the values of the threshold voltage of the coplanar structure TFTs were only slightly shifted, by 0.18 V, indicative of their stability. The coplanar structure TFTs were embedded in OLEDs and exhibited a maximum luminance as large as 500 nits, and their color gamut satisfied 99 % of the digital cinema initiatives, confirming their suitability for large size and high resolution OLEDs. Further, the image density of large-size OLEDs embedded with the coplanar structure TFTs was significantly enhanced compared with OLEDs embedded with conventional TFTs.

Analysis of the Threshold Voltage Instability of Bottom-Gated ZnO TFTs with Low-Frequency Noise Measurements (Low-Frequency Noise 측정을 통한 Bottom-Gated ZnO TFT의 문턱전압 불안정성 연구)

  • Jeong, Kwang-Seok;Kim, Young-Su;Park, Jeong-Gyu;Yang, Seung-Dong;Kim, Yu-Mi;Yun, Ho-Jin;Han, In-Shik;Lee, Hi-Deok;Lee, Ga-Won
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.23 no.7
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    • pp.545-549
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    • 2010
  • Low-frequency noise (1/f noise) has been measured in order to analyze the Vth instability of ZnO TFTs having two different active layer thicknesses of 40 nm and 80 nm. Under electrical stress, it was found that the TFTs with the active layer thickness of 80 nm shows smaller threshold voltage shift (${\Delta}V_{th}$) than those with thickness of 40 nm. However the ${\Delta}V_{th}$ is completely relaxed after the removal of DC stress. In order to investigate the cause of this threshold voltage instability, we accomplished the 1/f noise measurement and found that ZnO TFTs exposed the mobility fluctuation properties, in which the noise level increases as the gate bias rises and the normalized drain current noise level($S_{ID}/{I_D}^2$) of the active layer of thickness 80 nm is smaller than that of active layer thickness of thickness 40 nm. This result means that the 80 nm thickness TFTs have a smaller density of traps. This result correlated with the physical characteristics analysis performmed using XRD, which indicated that the grain size increases when the active layer thickness is made thicker. Consequently, the number of preexisting traps in the device increases with decreasing thickness of the active layer and are related closely to the $V_{th}$ instability under electrical stress.

Effects of the Powder Preparation Method on the Magnetic Properties of Fe-based Amorphous Alloy Powder Cores (철계 비정질 합금 분말코아의 자기적 특성에 미치는 분말 제조방식의 영향)

  • Noh, T.H.;Choi, H.Y.
    • Journal of the Korean Magnetics Society
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    • v.15 no.3
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    • pp.191-197
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    • 2005
  • In the fabrication process of Fe-based amorphous alloy powder cores by pulverization of the melt-spun ribbons and cold compaction, the effects of powder preparation method on the magnetic & electric properties, powder shapes and microstructure of cores have been investigated. The powder cores made by using rotor mill showed low effective permeability as compared to the cores prepared by ball milling. However the frequency dependence and quality factor properties were superior in the case of rotor-milling. Further the powders prepared by rotor mill had homogeneous and round shapes through strong shearing in the sieve ring, while the ball milled powders were inhomogeneous and relatively small. The lower permeability of the powder cores fabricated with rotor mill was considered to be due to the high internal stress occurred by very intensive shearing. Moreover the powder cores produced by rotor-milling showed lower core loss and good frequency dependence of effective permeability possibly due to the higher electrical insulation between magnetic particles. The dc bias property of the powder cores made by rotor-milling was better than the one by ball-milling.

Evaluation of NDVI Retrieved from Sentinel-2 and Landsat-8 Satellites Using Drone Imagery Under Rice Disease (드론 영상을 이용한 Sentinel-2, Landsat-8 위성 NDVI 평가: 벼 병해 발생 지역을 대상으로)

  • Ryu, Jae-Hyun;Ahn, Ho-yong;Na, Sang-Il;Lee, Byungmo;Lee, Kyung-do
    • Korean Journal of Remote Sensing
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    • v.38 no.6_1
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    • pp.1231-1244
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    • 2022
  • The frequency of exposure of field crops to stress situations is increasing due to abnormal weather conditions. In South Korea, large-scale diseases in representative paddy rice cultivation area were happened. There are limits to field investigation on the crop damage due to large-scale. Satellite-based remote sensing techniques are useful for monitoring crops in cities and counties, but the sensitivity of vegetation index measured from satellite under abnormal growth of crop should be evaluated. The goal is to evaluate satellite-based normalized difference vegetation index (NDVI) retrieved from different spatial scales using drone imagery. In this study, Sentinel-2 and Landsat-8 satellites were used and they have spatial resolution of 10 and 30 m. Drone-based NDVI, which was resampled to the scale of satellite data, had correlation of 0.867-0.940 with Sentinel-2 NDVI and of 0.813-0.934 with Landsat-8 NDVI. When the effects of bias were minimized, Sentinel-2 NDVI had a normalized root mean square error of 0.2 to 2.8% less than that of the drone NDVI compared to Landsat-8 NDVI. In addition, Sentinel-2 NDVI had the constant error values regardless of diseases damage. On the other hand, Landsat-8 NDVI had different error values depending on degree of diseases. Considering the large error at the boundary of agricultural field, high spatial resolution data is more effective in monitoring crops.