• Korean Journal of Construction Engineering and Management
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• v.19 no.6
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• pp.55-64
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• 2018

In spite of many previous studies conducted to prevent safety accidents at construction sites, the frequency of safety accidents has not decreased. And recently, a lot of research has been done to analyze the causes of the accidents resulting from the personal characteristics and behaviors of managers or workers, and eliminate them. However, despite these efforts, safety accidents occur consistently as managers and workers shift their responsibilities for the safety accidents onto someone other than themselves. Therefore, in order to prevent safety accidents, this study investigated the consciousness of shifting responsibility among managers and workers and analyzed the correlation between factors influencing the consciousness of shifting responsibility. In addition, it proposed the quantitative levels of the consciousness of shifting responsibility based on the survey of managers and workers. The results of this study demonstrated that managers tend to the shift responsibility onto workers, whereas workers the shift responsibility onto managers. It was additionally demonstrated that there is a correlation between the consciousness of shifting responsibility and the factors influencing it. The findings of this study are expected to improve the safety awareness among managers and workers and make contributions in the theoretical and practical aspects of construction safety management.

• Journal of Navigation and Port Research
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• v.28 no.5
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• pp.429-434
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• 2004

In this paper, we designed a reconfigurable slot antenna using sequentially voltage-applied RF MEMS switches. In order to obtain pull-in voltage and maximum stress of the MEMS switches, the switch structures in accordance with airgap height was analyzed by ANSYS simulation A actuation voltage of MEMS switches can be determined by switch geometry and airgap height between a movable plate and a bottom plate. The designed lengths of MEMS switches were 240 $\mu\textrm{m}$, 320 $\mu\textrm{m}$, 400 $\mu\textrm{m}$, respectively and the airgap was 6$\mu\textrm{m}$. The total size of the designed slot antenna was 10 mm x 10 mm and the slot length and width were 500 $\mu\textrm{m}$ and 200 $\mu\textrm{m}$, respectively. The length and size of the CPW feedline were 5 mm and 30-80-30 $\mu\textrm{m}$, respectively. and then the size of the CPW in the slot was 50-300-150 $\mu\textrm{m}$. The tuning of the resonant frequency of the proposed device is realized by varying the electrical length of the antenna, which is controlled by applying the DC bias voltages to the RF MEMS switches. The designed slot antenna has been simulated, fabricated and measured.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.3
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• pp.182-187
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• 2011

In this paper, PBTI characteristics of NMOSFETs with La incorporated HfSiON and HfON are compared in detail. The charge trapping model shows that threshold voltage shift (${\Delta}V_{\mathrm{T}}$) of NMOSFETs with HfLaON is greater than that of HfLaSiON. PBTI lifetime of HfLaSiON is also greater than that of HfLaON by about 2~3 orders of magnitude. Therefore, high charge trapping rate of HfLaON can be explained by higher trap density than HfLaSiON. The different de-trapping behavior under recovery stress can be explained by the stable energy for U-trap model, which is related to trap energy level at zero electric field in high-k dielectric. The trap energy level of two devices at zero electric field, which is extracted using Frenkel-poole emission model, is 1,658 eV for HfLaSiON and 1,730 eV for HfLaON, respectively. Moreover, the optical phonon energy of HfLaON extracted from the thermally activated gate current is greater than that of HfLaSiON.

• Proceedings of the Korea Water Resources Association Conference
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• 2019.05a
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• pp.185-185
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• 2019

Sustaining future wheat production is challenged by anthropogenically forced climate warming and drying led by increased concentration of greenhouse gases all around the globe. Warming stresses, originating from the elevated $CO_2$ concentration, are continuously reported to have negative impacts on wheat growth and yield. Yet, elevated $CO_2$ concentration, despite being disparagingly blamed for promoting warming, is also associated with a phenomenon called $CO_2$ enrichment; in which wheat yield can improve due to the enhanced photosynthesis rates and less water loss through transpiration. The conflicting nature of climate warming and $CO_2$ enrichment and their interplay can have specific implications under different environments. It is established form the field and simulation studies that the two contrasting phenomena would act severely in their own respect under arid and semi-arid environments. Wheat is a dietary staple for masses in Pakistan. The country's wheat production system is under constant stress to produce more from irrigated agricultural lands, primarily lying under arid to semi-arid environments, to meet the rapidly growing domestic needs. This work comprehensively examines the warming impacts over wheat yield and water productivity (WP), with and without the inclusion of $CO_2$ enrichment, under semi-arid environment of Punjab which is the largest agricultural province of Pakistan. Future wheat yields and WPs were simulated by FAO developed AquaCrop model v 5.0. The model was run using the bias-correction climate change projections up to 2080 under two representative concentration pathways (RCP) scenarios: 4.5 and 8.5. Wheat yield and WPs decreased without considering the $CO_2$ enrichment effects owing to the elevated irrigation demands and accelerated evapotranspiration rates. The results suggested that $CO_2$ enrichment could help maintain the current yield and WPs levels during the 2030s (2021-2050); however, it might not withhold the negative climate warming impacts during the 2060s (2051-2080). Furthermore, 10 - 20 day backward shift in sowing dates could also help ease the constraints imposed by climate warming over wheat yields and WPs. Although, $CO_2$ enrichment showed promises to counteract the adverse climate warming impacts but the interactions between climate warming and $CO_2$ concentrations were quite uncertain and required further examination.

• Asian Journal of Turfgrass Science
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• v.20 no.2
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• pp.223-235
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• 2006

Soil testing laboratories unfamiliar with turfgrasses will often overestimate the plant's need for phosphorus and underestimate the need for potassium. This is partly due to differences in rooting between grasses and many garden plants and crops. The grasses are generally more efficient in extracting phosphorus from the soil, reducing their need for phosphorus fertilizer. The fact that crop yield is often the primary objective in field crop production, and is usually of little interest in turfgrass management, may affect soil test interpretation for potassium. Potassium levels above those required for maximum tissue yield of grasses may improve stress tolerance and turfgrasses will usually benefit from higher applications of this element. There are also diffrrences in soil testing philosophies. Some laboratories use the sufficiency level of available nutrients(SLAN) approach, whereas others prefer the basic cation saturation ratio(BCSR) approach. Some will use a combination of the two methods. The use of the BCSR theory easily lends itself to abuse and questionable fertilizer applications and products are sometimes recommended citing imbalances in cation ratios. The usefulness of the BCSR ratio theory of soil testing varies with soil texture and interpretations on tests performed on sand-based media are particularly a problem. Other soil testing problems occur when sand-based media used on sports fields and golf greens contain free calcium carbonate. The ammonium acetate extractant at pH 7.0 dissolves excessive amounts of calcium that can bias cation exchange capacity measurements and measurements of cation ratios. Adjusting the pH of the extractant to 8.1 can improve the accuracy of the testing procedure for calcareous media.

• Korean Journal of Remote Sensing
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• v.34 no.6_1
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• pp.1055-1066
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• 2018

Vegetation indices on the basis of optical characteristics of vegetation can represent various conditions such as canopy biomass and physiological activity. Those have been mostly developed with the large-scaled applications of multi-band optical sensors on-board satellites. However, the sensitivity of vegetation indices for detecting vegetation features will be different depending on the spatial scales. Therefore, in this study, the investigation of photochemical reflectance index (PRI), known as one of useful vegetation indices for detecting photosynthetic ability and vegetation stress, under the three spatial scales was conducted using multi-spectral camera installed in unmanned aerial vehicle (UAV),field spectrometer, and leaf reflectometer. In the leaf scale, diurnal PRI had minimum values at different local-time according to the compass direction of leaf face. It meant that each leaf in some moment had the different degree of light use efficiency (LUE). In early growth stage of crop, $PRI_{leaf}$ was higher than $PRI_{stands}$ and $PRI_{canopy}$ because the leaf scale is completely not governed by the vegetation cover fraction.In the stands and canopy scales, PRI showed a large spatial variability unlike normalized difference vegetation index (NDVI). However, the bias for the relationship between $PRI_{stands}$ and $PRI_{canopy}$ is lower than that in $NDVI_{stands}$ and $NDVI_{canopy}$. Our results will help to understand and utilize PRIs observed at different spatial scales.

• Journal of Korean Society of Coastal and Ocean Engineers
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• v.32 no.6
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• pp.373-383
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• 2020

In this study we established an operational storm-surge system for the northwestern pacific ocean, based on the NEMO (Nucleus for European Modeling of the Ocean). The system consists of the tide and the surge models. For more accurate storm surge prediction, it can be completed not only by applying more precise depth data, but also by optimal parameterization at the boundaries of the atmosphere and ocean. To this end, we conducted several sensitivity experiments related to the application of available bathymetry data, ocean bottom friction coefficient, and wind stress and air pressure on the ocean surface during August~September 2018 and the case of typhoon SOULIK. The results of comparison and verification are presented here, and they are compared with POM (Princeton Ocean Model) based Regional Tide Surge forecasting Model (RTSM). The results showed that the RTSM_NEMO model had a 29% and 20% decrease in Bias and RMSE respectively compared to the RTSM_POM model, and that the RTSM_NEMO model had a lower overall error than the RTSM_POM model for the case of typhoon SOULIK.

• Korean Journal of Remote Sensing
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• v.37 no.2
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• pp.211-220
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• 2021

Land Surface Temperature (LST) is one of the useful parameters to diagnose the growth and development of crop and to detect crop stress. Unmanned Aerial Vehicle (UAV)-based LST (LSTUAV) can be estimated in the regional spatial scale due to miniaturization of thermal infrared camera and development of UAV. Given that meteorological variable, type of instrument, and surface condition can affect the LSTUAV, the evaluation for accuracy of LSTUAV is required. The purpose of this study is to evaluate the accuracy of LSTUAV using LST measured at ground (LSTGround) under various meteorological conditions and growth phases of garlic crop. To evaluate the accuracy of LSTUAV, Relative humidity (RH), absolute humidity (AH), gust, and vegetation index were considered. Root mean square error (RMSE) after minimizing the bias between LSTUAV and LSTGround was 2.565℃ under above 60% of RH, and it was higher than that of 1.82℃ under the below 60% of RH. Therefore, LSTUAV measurement should be conducted under the below 60% of RH. The error depending on the gust and surface conditions was not statistically significant (p-value < 0.05). LSTUAV had reliable accuracy under the wind speed conditions that allow flight and reflected the crop condition. These results help to comprehend the accuracy of LSTUAV and to utilize it in the agriculture field.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.107-108
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• 2008

The spectacular development of AMLCDs, been made possible by a-Si:H technology, still faces two major drawbacks due to the intrinsic structure of a-Si:H, namely a low mobility and most important a shift of the transfer characteristics of the TFTs when submitted to bias stress. This has lead to strong research in the crystallization of a-Si:H films by laser and furnace annealing to produce polycrystalline silicon TFTs. While these devices show improved mobility and stability, they suffer from uniformity over large areas and increased cost. In the last decade we have focused on microcrystalline silicon (${\mu}c$-Si:H) for bottom gate TFTs, which can hopefully meet all the requirements for mass production of large area AMOLED displays [1,2]. In this presentation we will focus on the transfer of a deposition process based on the use of $SiF_4$-Ar-$H_2$ mixtures from a small area research laboratory reactor into an industrial gen 1 AKT reactor. We will first discuss on the optimization of the process conditions leading to fully crystallized films without any amorphous incubation layer, suitable for bottom gate TFTS, as well as on the use of plasma diagnostics to increase the deposition rate up to 0.5 nm/s [3]. The use of silicon nanocrystals appears as an elegant way to circumvent the opposite requirements of a high deposition rate and a fully crystallized interface [4]. The optimized process conditions are transferred to large area substrates in an industrial environment, on which some process adjustment was required to reproduce the material properties achieved in the laboratory scale reactor. For optimized process conditions, the homogeneity of the optical and electronic properties of the ${\mu}c$-Si:H films deposited on $300{\times}400\;mm$ substrates was checked by a set of complementary techniques. Spectroscopic ellipsometry, Raman spectroscopy, dark conductivity, time resolved microwave conductivity and hydrogen evolution measurements allowed demonstrating an excellent homogeneity in the structure and transport properties of the films. On the basis of these results, optimized process conditions were applied to TFTs, for which both bottom gate and top gate structures were studied aiming to achieve characteristics suitable for driving AMOLED displays. Results on the homogeneity of the TFT characteristics over the large area substrates and stability will be presented, as well as their application as a backplane for an AMOLED display.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.33A no.2
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• pp.96-113
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• 1996

It has been found that the misfit dislocations in heavily boron-doped layers originate from wafer edges. Moreover, the propagation of the misfit dislocation into a heavily boron-doped region can be suppressed by placing a surrounding undoped region. Using a surrounding undoped region the disloction-free heavily boron-deoped silicon membranes have been fabricated. The measured surface roughness, fracture strength, and residual tensile stress of the membrane are 20.angs. peak-to-peak, 1.39${\times}$10$^{10}$ and 2.7${\times}$10$^{9}$dyn/cm$^{2}$, while those of the conventional heavily boron-doped silicon membrane with high density of misfit dislocations are 500 peak-to-peak, 8.27${\times}$10$^{9}$ and 9.3${\times}$10$^{8}$dyn/cm$^{2}$ respectively. The differences between these two membranes are due to the misfit dislocations. Young's modulus has been extracted as 1.45${\times}$10$^{12}$dyn/cm$^{2}$ for both membranes. Also, the effective lattice constant of heavily boron-doped silicon, the in-plane lattice constant of the conventional membrane, and the density of misfit dislocation contained in the conventional membrane have been extracted as density of misfit dislocation contained in the conventional membrane have been extracted as density of misfit dislocation contained in the conventional membrane have been extracted as 5.424.angs. 5.426.angs. and 2.3${\times}$10$^{4}$/cm for the average boron concentration of 1.3${\times}$10$^{20}$/cm$^{-23}$ cm$^{3}$/atom. Without any buffer layers, a disloction-free lightly boron-doped epitaxial layer with good crsytalline quality has been directly grown on the dislocation-free heavily boron-doped silicon layer. X-ray diffraction analysis revealed that the epitaxial silicon has good crystallinity, similar to that grown on lightly doped silicon substrate. The leakage current of the n+/p gated diode fabricated in the epitaxial silicon has been measured to be 0.6nA/cm$^{2}$ at the reverse bias of 5V.