• 한국정보디스플레이학회:학술대회논문집
• /
• 2000.01a
• /
• pp.153-154
• /
• 2000

Large size poly-Si TFT-LCDs have been fabricated using p-channel thin film transistors for notebook PC application. We have designed and implemented the data sampling circuit and gate drivers that operate with low power consumption and high reliability. The gate driver has a redundant structure. We have realized the uniform and excellent display quality comparable to that of CMOS module. The reliability of panel is investigated and discussed by measuring the bias stability of transistors.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2006.05a
• /
• pp.121-124
• /
• 2006

It is widely know that one of the most important tasks is the research of plasma for the purpose o nuclear fusion, is to make a stable confinement of high ${\beta}$ value plasma. And, for making the stable confinement, pinch pl-asma produced by reversed field has been mainly studied yet. Magnetic field has been used to hold plasma at high temperature for a long time. Reverse field has shown unstable process. Using ratio frequency, the author could control the instability of the process and formed a stable erversed field. Inthe experiment let a reversed field configuration from by adding-Bias field in advance.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2009.10a
• /
• pp.318-321
• /
• 2009

We have studied transparent top gate Al-Zn-Sn-O (AZTO) TFTs with an $Al_2O_3$ protective layer (PL) on an active layer. We also fabricated a transparent 2.5 inch QCIF+AMOLED display panel using the AZTO TFT back-plane. The AZTO active layers were deposited by RF magnetron sputtering at room temperature and the PL was deposited by ALD with two different processes. The mobility and subthreshold slope were superior in the cases of the vacuum annealing and the oxygen plasma PL compared to the $O_2$ annealing and the water vapor PL, however, the bias stability was excellent for the TFTs of the $O_2$ annealing and the water vapor PL.

• Proceedings of the KIEE Conference
• /
• 2000.07c
• /
• pp.1717-1719
• /
• 2000

DLC films are deposited by using an FCVA deposition system with a mirror-type magnetic field configuration. Permanent magnets and: magnetic yokes around the cathode have been observed to enhance the mobility of arc spots on the cathode and the stability of arc plasma, Effects of reactor pressures and substrate biases on structural properties of DLC films deposited are investigated. The results show that the highest $sp^{3}/sp^{2}$ fraction is obtained when the films are deposited at a pressure of $3{\times}10^4$ Torr and a bias voltage of - 50 V. The variation of the structural properties due to thermal stress up to 500$^{\circ}C$ is also examined.

• Journal of Institute of Control, Robotics and Systems
• /
• v.12 no.11
• /
• pp.1065-1073
• /
• 2006

In this paper we confirm the relation between the phases and phase errors of the beat signal at the lock-in region of the amplitude modulation type ring laser gyroscope by numerical calculation. Based on this facts, we, numerically, study the envelopes and magnitudes of the dither noise for statistically summing out the beat signal phase error, and we, experimently, confirm these numerical results. As a result, we find that the dither noise requires the increase gradient and the decrease gradient of the dither amplitudes, and those gradients should be combined with white noise. The magnitude of the dither noise which is satisfied with these requirements should be more than 5 percents of the average dither amplitude.

• Ceramist
• /
• v.21 no.1
• /
• pp.44-54
• /
• 2018

Oxide semiconductor has been spotlighted as a channel material of TFTs in AMLCD as an alternative to Si, due to high mobility ( > $5cm^2/Vs$). It is also one of the strong candidates for TFTs in AMOLED because of high bias stability at amorphous phase. Beyond the advantages mentioned above, oxide semiconductor has many strengths such as transparency, low fabrication temperature and relatively low fabrication cost. For those reasons, the application of oxide semiconductor is not limited to display but can be extended to new types of electronics, for example, transient electronics for human implantable devices. From this context, oxide materials that have been used as semiconductor and insulator at transient electronics are investigated respectively, and conductor and substrate candidates are also explained, since transient electronics require systematic consideration beyond individual oxide films.

• Proceedings of the KIEE Conference
• /
• 2005.07c
• /
• pp.2187-2189
• /
• 2005

It is widely know that one of the most important tasks is the research of plasma for the purpose o nuclear fusion, is to make a stable confinement of high ${\beta}$ value plasma. And, for making the stable confinement, pinch p1-asma produced by reversed field has been mainly studied yet. Magnetic field has been used to hold plasma at high temperature for a long time. Reverse field has shown unstable process. Using ratio frequency, the author could control the instability of the process and formed a stable erversed field. Inthe experiment let a reversed field configuration from by adding-Bias field in advance.

• Proceedings of the KIEE Conference
• /
• 2007.07a
• /
• pp.246-247
• /
• 2007

능동 구동형 유기 발광 소자 디스플레이용 수소화된 비정질 실리콘 박막 트랜지스터의 전류 안정성을 개선하기 위해, 음전압 인가방식을 채택한 새로운 화소 회로를 제안하였다. 제안한 회로는 5개의 트랜지스터를 사용하였고, 직전에 인가했던 $V_{GS}$에 따라 음의 전압을 인가하여 양의 전압에 의한 구동 박막 트랜지스터의 열화 현상을 줄여준다. 본회로는 SPICE 시뮬레이션을 통해 검증하였다.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2013.08a
• /
• pp.209.2-209.2
• /
• 2013

We proposed and fabricated zinc oxide thin-film transistors (TFTs) employing 4-mercaptophenol (4MP) doped ZnO by atomic layer deposition (ALD) that results in highly stable and high performance. The 4MP concentration in ZnO films were varied from 1.7% to 5.6% by controlling Zn:4MP pulses. The n-type carrier concentrations in ZnO thin films were controlled from $1.017{\times}10^{20}/cm^3$ to $2.903{\times}10^{17}/cm^3$ with appropriate amount of 4MP doping. The 4.8% 4MP doped ZnO TFT revealed good device mobility performance of 8.4 $cm^2/Vs$ and the on/off current ratio of 106. Such 4MP doped ZnO TFTs exhibited relatively good stability (${\Delta}V_{th}$: 2.4 V) under positive bias-temperature stress while the TFTs with only ZnO showed a 4.3 ${\Delta}V_{th}$ shift, respectively.

• International Journal of Internet, Broadcasting and Communication
• /
• v.11 no.1
• /
• pp.47-53
• /
• 2019

The idea of ensemble learning is to train multiple models, each with the objective to predict or classify a set of results. Most of the errors from a model's learning are from three main factors: variance, noise, and bias. By using ensemble methods, we're able to increase the stability of the final model and reduce the errors mentioned previously. By combining many models, we're able to reduce the variance, even when they are individually not great. In this paper we propose an ensemble model and applied it to classification problem. In iris, Pima indian diabeit and semiconductor fault detection problem, proposed model classifies well compared to traditional single classifier that is logistic regression, SVM and random forest.