• 한국결정성장학회지
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• 제6권3호
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• pp.406-414
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• 1996

본 연구에서는 금속타겟을 이용한 반응성 스퍼터링법을 이용하여 PZT 박막 증착후 냉각시 산소분압에 따른 박막의 상형성 거동 및 전기적 특성에 미치는 영향을 고찰하였다. 냉각시 산소분압의 감소에 따라 박막 표면의 휘발에 기인하여 표면거칠기는 증가하였고 입성장은 거의 일어나지 않았다. 산소분압이 증가할수록 각형비가 보다 우수한 hysteresis 특성을 얻을 수 있었고 산소분압이 감소함에 따라 remanent polarization과 retained polarization이 감소하였으며, 항전계의 감소가 관찰되었다. 산소분압에 따른 유전율-전압 특성 측정에서 산소분입이 감소함에 따라 internal bias field의 증가가 관찰되었으며, 유전율도 조금씩 감소하였다. Field accelerated retention 시험결과 냉각시 산소분압이 감소함에 따라 nonswitched polarization의 증가가 관찰되었고 bias time이 증가함에 따라 nonswitched polarization이 감소하였다.

• 마이크로전자및패키징학회지
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• 제10권2호
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• pp.39-47
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• 2003

감광성 폴리이미드 위에 Cr을 RF 바이어스 스퍼터링 및 RF클리닝 후 DC 스퍼터링한 Cr/폴리이미드의 계면을 TEM으로 관찰하였다. RF power 밀도를 $0.13W/cm^2$에서 $2.12W/cm^2$로 증가시키면서 RF클리닝을 실시한 결과 폴리이미드의 에칭 양상이 둥근 모양에서 뾰족한 모양으로 변하였고 이방성 에칭으로 인해 거칠기가 크게 증가하였다. RF 바이어스 스퍼터링의 경우 RF power를 올리는 동안 RF 클리닝에 의해 폴리이미드가 에칭되었고, 에칭된 부분에 Cr이 증착된 계면을 단면으로 관찰한 결과 Cr과 폴리이미드가 겹쳐져서 혼합된 것처럼 보였다. 그러나 RF power를 올리는 시간을 단축시켜 Cr을 바이어스 스퍼터링했을 때에는 계면이 분명하게 관찰되어 Cr의 implantation이 일어나지 않았음을 알 수 있었다. RF 클리닝한 Cu/Cr/Polyimide를 필 테스트한 결과 짧은 시간의 RF 클리닝으로도 접착력이 크게 증가하였다. 그러므로 RF power를 올리는 동안 실시되었던 RF 클리닝이 RF 바이어스 스퍼터링한 Cr/Polyimide의 접착력 향상에 영향을 주었을 것으로 예상된다.

• Journal of Magnetics
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• 제10권3호
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• pp.99-102
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• 2005

Modification in exchange bias of a NiFe/FeMn/NiFe trilayer, on introduction of a nonmagnetic Al layer at the top FeMn/NiFe interface, is investigated in multilayers prepared by rf magnetron sputtering. The introduction of Al layer leads to vanishing of bias of the top NiFe layer. But the bias for the bottom NiFe layer increases steadily with increasing Al layer thickness and attains bias (230 Oe) which is greater than that of the trilayer without the Al layer (150 Oe). When the top NiFe layer thickness is varied, exchange bias has highest value at 12 nm thickness for 1 nm thicknes of Al layer. Ion beam etching of the top NiFe layer also leads to an enhancement in bias for the bottom NiFe layer.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1999년도 춘계학술대회 논문집
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• pp.379-382
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• 1999

In this paper, we investigated the characteristics of MgO thin film prepared by unbalanced magnetron sputtering(UBMS) in surface discharge type AC PDP The minimum discharge voltage is obtained for the sample of substrate bias voltage-10V. Moreover the anti-sputtering characteristics of MgO thin film by UBMS is improved about 40% than one of balanced magnetron sputtering(BMS)

• 대한전기학회:학술대회논문집
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• 대한전기학회 2006년도 제37회 하계학술대회 논문집 C
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• pp.1440-1441
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• 2006

In this study, we synthesized CNTs(carbon nanotubes) on the glass substrate by microwave plasma enhanced chemical vapor deposition (MPECVD), Effect of bias voltage on the grown behavior and morphology of CNTs were investigated. Recently, it has been proposed that aligned CNTs can also be achieved by the application of electric bias to the substrate during growth, the first time reported the bias effect such that the nanotube alignment occurred only when a positive bias was applied to the substrate whereas no aligned growth occurred under a negative bias and no tube growth was observed without bias. On the country, several researchers reported some different observations that aligned nanotubes could also be grown under negative substrate biases. This discrepancy as for the effect of positive and negative bias may indicate that the bias effect is not fully understood yet. The glass and Si wafers were first deposited with TiN buffer layer by r.f sputtering method, and then Ni catalyst same method, The thickness of TiN and Ni layer were 200 nm and 60 nm, respectively. The main process parameters include the substrate bias (0 to - 300 V), and deposition pressure (8 to 20 torr).

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 영호남학술대회 논문집
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• pp.142-145
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• 2000

The performance of ac plasma display panels (PDP) is influenced strongly by the surface glow discharge characteristics on the MgO thin films. This paper deals with the surface glow discharge characteristics and some physical properties of MgO thin films prepared by reactive RF planar unbalanced magnetron sputtering in connection with ac PDP. The samples prepared with the dc bias voltage of -10V showed lower discharge voltage and lower erosion rate by ion bombardment than those samples prepared by conventional magnetron sputtering or E-beam evaporation. The main factor that improves the discharge characteristics by bias voltage is considered to be due to the morphology changes or crystal structure of the MgO thin film by ion bombardment during deposition process.

• 한국표면공학회지
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• 제39권6호
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• pp.263-267
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• 2006

As technology advances, there is a demand for development of hard solid lubricant coating. (Ti, Cr, Zr)N-$MoS_2$ films were deposited on AISI H13 tool steel substrate by co-deposition of $MoS_2$ with (Ti, Cr, Zr)N using a D.C. magnetron sputtering process. The influence of the $N_2Ar$ gas ratio, the amount of $MoS_2$ in the films and the bias voltage on the mechanical and structural properties of the films were investigated. The highest hardness level was observed at the $N_2/Ar$ gas ratio of 0.3. Hardness of the films did not change much with the increase of the $MoS_2$ content in the films. As the substrate bias potential was increased, hardness level of the film reached maximum at -150 V. Surface morphology of these films indicated that high hardness was attributed to the fine dome structure.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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• pp.540-542
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• 2009

Phosphorus doped ZnO (PZO) thin films were deposited on $SiO_2$/n-Si substrates using DC magnetron sputtering system varying oxygen partial pressures from 0 to 40 % under Ar atmosphere. The deposited films showed reduced n-type conductivity due to the compensating donor effects by phosphorus dopant. The bias-time stability shows relatively good stability over bias and time comparing to un-doped ZnO-based TFTs.

• 한국표면공학회지
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• 제37권1호
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• pp.1-4
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• 2004

MoS$_2$-Ti films were deposited on SKD-11 tool steel substrate by a D.C. magnetron sputtering system. The influence of deposition parameters on the adhesion of the films was investigated by the scratch test. Crosssection morphology was evaluated using FE-SEM. The plasma etching played an important role on the adhesion of the films. The appropriate etching conditions roughened the surface, resulting In the improved adhesion of the film. The adhesion of the film increased with the interlayer thickness up to 110 nm and then decreased slightly with further increasing of interlayer thickness. The adhesion was highest at a bias voltage of -50 V. Further increase of the bias voltage decreased the film adhesion.

• Journal of Ceramic Processing Research
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• 제17권7호
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• pp.763-767
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• 2016

The structural characterization of cubic boron nitride (c-BN) thin films was performed using a B4C target in a radio-frequency magnetron sputtering system. The deposition processing conditions, including the substrate bias voltage, substrate temperature, and base pressure were varied. Fourier-transform infrared spectroscopy and X-ray photoelectron spectroscopy were used to analyze the crystal structures and chemical binding energy of the films. For the BN film deposited at room temperature, c-BN was formed in the substrate bias voltage range of -400 V to -600 V. Less c-BN fraction was observed as the deposition temperature increased, and more c-BN fraction was observed as the base pressure increased.