• Proceedings of the Korean Ceranic Society Conference
• /
• 2000.10a
• /
• pp.134.1-134
• /
• 2000

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2003.05a
• /
• pp.92-95
• /
• 2003

전력선 통신용 LC 공진필터에 사용되는 Ni-Zn 페라이트를 제조하기 위해 $Ni_{0.8}Zn_{0.2}Fe_{2}O_{4}$를 기본조성으로 첨가제 $Bi_{2}O_{3}$, CaO와 x (co mol 비)를 변화시켜 전자기적 특성을 조사하였다. $Bi_{2}O_{3}$ CaO가 첨가됨으로써 균일한 입자성장과 입계에 고저항층이 형성되어 주파수 손실이 감소하였으며, $Ni_{0.8-x}Zn_{0.2}Co_{x}Fe_{2}O_{\delta}$의 기본조성에 Co의 함량을 증가시키면 x = 0.05에서 투자율 75, 공진주파수 20MHz의 특성을 나타내고 결정 입자 크기와 같은 구조적 특성에는 영향을 거의 미치지 않지만 전자기적 특성에는 영향을 미친다. 또한, $Ni_{0.75}Zn_{0.2}Co_{0.05}Fe_{2}O_{4.017}$ 조성의 페라이트 코어의 발열량은 큐리온도 이하에서 일어난다.

• Journal of the Microelectronics and Packaging Society
• /
• v.6 no.4
• /
• pp.55-59
• /
• 1999

One of lead free glass, Bi based solder glass is investigated for electronic packaging application. The melting temperature of glass about $550^{\circ}C$ at Bi based glass (70wt% $B_2O_3$ + l5wt%$B_2O_3$ + 8wt% $SiO_2$ + 2wt% $P_2O_5$ + 4wt% $A1_2O_3$ +lwt% ZnO) and varied with $P_2O_5$ content in this system. Crystallized glasses were obtainded after 1hr heat teratment at $450^{\circ}C$ with 10wt% of $P_2O_5$ addition. Much higher melting temperature was observed at $B_2O_3$ rich composition area.

• Advances in nano research
• /
• v.3 no.3
• /
• pp.123-131
• /
• 2015

The unintentionally doped and bismuth (Bi) doped zinc oxide (ZnO) films were prepared by spray pyrolysis at $450^{\circ}C$ with zinc acetate and bismuth nitrate precursor. The n-type conduction with concentration $6.13{\times}10^{16}cm^{-3}$ can be observed for the unintentionally doped ZnO. With the increasing of bismuth nitrate concentration in precursor, the p-type conduction can be observed. The p-type concentration $4.44{\times}10^{17}cm^{-3}$ can be achieved for the film with the Bi/Zn atomic ratio 5% in the precursor. The photoluminescence spectroscopy with HeCd laser light source was studied for films with different Bi doping. The photocatalytic activity for the unintentionally doped and Bi-doped ZnO films was studied through the photodegradation of Congo red under UV light illumination. The effects of different Bi contents on photocatalytic activity are studied and discussed. Results show that appropriate Bi doping in ZnO can increase photocatalytic activity.

• Transactions on Electrical and Electronic Materials
• /
• v.14 no.4
• /
• pp.193-198
• /
• 2013

The effects of additives (Cr, Nb, Dy, and Bi) on microstructure, electrical properties, dielectric characteristics, and aging behavior of $ZnO-V_2O_5-MnO_2-Co_3O_4-La_2O_3$ (ZVMCL) ceramics were systematically investigated. The phase formed in common for all ZVMCL ceramics modified with various additives consisted of ZnO grain as a main phase, and $Zn_3(VO_4)_2$ and $ZnV_2O_4$ as the secondary phases. The sintered density and average grain size were in the range of $5.4-5.54g/cm^3$ and $3.7-5.1{\mu}m$, respectively. The ZVMCL ceramics modified with Cr exhibited the highest breakdown field (6,386 V/cm) and the ZVMCL ceramics modified with Nb exhibited the lowest breakdown field (3,517 V/cm). All additives enhanced the nonlinear coefficient (${\alpha}$), by a small or large margin, in particular, additives such as Bi and Nb noticeably increased the nonlinear coefficient, with ${\alpha}=25.5$ and ${\alpha}=23$, respectively. However, on the whole, all additives did not improve the stability against a DC stress, compared with ZVMCL ceramics.

• Korean Journal of Materials Research
• /
• v.18 no.12
• /
• pp.678-682
• /
• 2008

This study investigates $Bi_2O_3$-$B_2O_3$-BaO-ZnO glass with variations of the $Co_3O_4$ content (0.25, 0.5, 1, and 2 wt%) and the interaction between transparent dielectric and Ag electrodes heat-treated at $500-560^{\circ}C$ for 30 min. The glass transition temperature, softening temperature and thermal expansion coefficient were $432^{\circ}C$, $460^{\circ}C$ and $81.4{\times}10^{-7}/^{\circ}C$, respectively. The transmittance of 0.25 wt% $Co_3O_4$ to which dielectric was added was highest and was decreased due to coloration with the addition of more than 0.25 wt%. However, without $Co_3O_4$, the transmittance of the transparent layer was decreased due to the formation of $Ba_5Bi_3$; however, the occurrence of the crystal phase decreased as a result of the addition of $Co_3O_4$. The amount of $Co^{2+}$ ions increased as the $Co_3O_4$ increased. With a maximum of $Co^{3+}$ ions, the highest transmittance was observed.

• Journal of Powder Materials
• /
• v.17 no.4
• /
• pp.289-294
• /
• 2010

For the aim of low-temperature co-fired ceramic microwave components, sintering behavior and microwave properties (dielectric constant ${\varepsilon}_r$, quality factor Q, and temperature coefficient of resonant frequency ${\tau}_f$) are investigated in $Bi_{18}O(Ca_{0.725}Zn_{0.275})_8Nb_{12}O_{65}$ [BCZN] ceramics with addition of $V_2O_5$. The specimens are prepared by conventional ceramic processing technique. As the main result, it is demonstrated that the additives ($V_2O_5$) show the effect of lowering of sintering temperature and improvement of microwave properties at the optimum additive content. The addition of 0.25 wt% $V_2O_5$ lowers the sintering temperature to $890^{\circ}C$ utilizing liquidphase sintering and show the microwave dielectric properties (dielectric constant ${\varepsilon}_r$ = 75, quality factor $Q{\times}f$ = 572 GHz, temperature coefficient of resonance frequency ${\tau}_f\;=\;-10\;ppm/^{\circ}C$). The estimated microwave dielectric properties with $V_2O_5$ addition (increase of ${\varepsilon}_r$, decrease of $Q{\times}f$, shift of ${\tau}_f$ to negative values) can be explained by the observed microstrucure (sintered density, abnormal grain structure) and possibly high-permittivity $Bi_{18}Zn_8Nb_{12}O_{65}$ (BZN) phase determined by X-ray diffraction.

• Journal of the Korean Ceramic Society
• /
• v.31 no.2
• /
• pp.137-146
• /
• 1994

This experiments were focused on a modification of mechamical properties and structure in porous aluminum titanate ceramics by new additives which have been not researched yet. These were consisted of four kinds of additives i.e. Bi2O3, FeO, ZnO and NiO by addition amount of 1 wt% and 5 wt% respectively. The addition of Bi2O3 retarded a degree of syntehsis of aluminum titanate and accelerated in FeO, ZnO, NiO additives. Also, the most effective accelerator in synthesis of alunium titanate was FeO. A additives for the most effective of modification of microstructure, sharp distribtion of pore size and mechanical proterties was on ZnO addition and showed the lowest average pore size and narrowed pore size distribution. In order to improve of microstructure and pore size distribution in porous aluminum titanate ceramics was desired the addition amount of 1 wt% compare to 5 wt%.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.26 no.12
• /
• pp.858-862
• /
• 2013

The front electrode should be used to make solar cell panel so as to collect electron. The front electrode is used by paste type, printed on the Si-solar cell wafer and sintered at about $800^{\circ}C$. The paste is composed Ag powder and glass frit which make the ohmic contact between Ag electrode and n-type semiconductor layer. From the previous study, the Ag electrodes which used two commercial glass frit of Bi-system were so different on the interface resistance. The main composition of them was Bi-Zn-B-Si-O and few additives added in one of them. In this study, glass frit was made with the ratio of $Bi_2O_3$ and ZnO on the main composition, and then paste using glass frit was prepared respectively. And, also, the paste using the glass frit added oxide additives were prepared. The change of interface resistance was not large with the ratio of $Bi_2O_3$ and ZnO. In the case of G6 glass frit, 78 wt% $Bi_2O_3$ addition, the interface resistance was $190{\Omega}$ and most low. In the glass frit added oxide, the case of Ca increased over 10 times than it of G6 glass frit on the interface resistance. It was thaught that after sintering, Ca added glass frit was not flowed to the interface between Ag electrode and wafer but was in the Ag electrode.

• Journal of the Microelectronics and Packaging Society
• /
• v.15 no.1
• /
• pp.1-6
• /
• 2008

Thermoelectric properties of calcium cobalt layer structure oxide system, $Ca_3Co_2O_6$ and $Ca_3Co_4O_9$ were investigated at the temperature range of 300 to 1000K for the application of thermoelectric generation. In the composition, the Ca site was partially substituted with Bi, Sr, La, K and the Co site was partially substituted with Mn, Fe, Ni, Cu, Zn. The thermoelectric properties of Bi substituted $Ca_3Co_4O_9$. $Ca_{2.7}Bi_{0.3}Co_4O_9$ for electrical conductivity, Seebeck coefficient and power factor were $85.4({\Omega}$cm)^{-l}, $176.2{\mu}V/K$ and $265.2{\mu}W/K^m$, respectively. The unit thermoelectric couple was fabricated with the p-type of $Ca_{2.7}Bi_{0.3}Co_4O_9$ and n-type ($Zn_{0.98}Al_{0.02}$)O thermoelectrics whose figure-of-merit(Z) were $0.87{\times}10^{-4}/K$ and $0.41{\times}10^4/K$, respectively. The generated thermoelectric power was about 30mV at the temperature difference of 120K in the unit thermoelectric couple.