• Title/Summary/Keyword: BiTe

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Enhancement of Thermoelectric Performance in Spark Plasma Sintered p-Type Bi0.5Sb1.5Te3.0 Compound via Hot Isostatic Pressing (HIP) Induced Reduction of Lattice Thermal Conductivity (열간등방가압 공정을 통한 P형 Bi0.5Sb1.5Te3.0 소결체의 격자 열전도도 감소 및 열전 특성 향상)

  • Soo-Ho Jung;Ye Jin Woo;Kyung Tae Kim;Seungki Jo
    • Journal of Powder Materials
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    • v.30 no.2
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    • pp.123-129
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    • 2023
  • High-temperature and high-pressure post-processing applied to sintered thermoelectric materials can create nanoscale defects, thereby enhancing their thermoelectric performance. Here, we investigate the effect of hot isostatic pressing (HIP) as a post-processing treatment on the thermoelectric properties of p-type Bi0.5Sb1.5Te3.0 compounds sintered via spark plasma sintering. The sample post-processed via HIP maintains its electronic transport properties despite the reduced microstructural texturing. Moreover, lattice thermal conductivity is significantly reduced owing to activated phonon scattering, which can be attributed to the nanoscale defects created during HIP, resulting in an ~18% increase in peak zT value, which reaches ~1.43 at 100℃. This study validates that HIP enhances the thermoelectric performance by controlling the thermal transport without having any detrimental effects on the electronic transport properties of thermoelectric materials.

Preparation of $Bi_2Te_3$ Thermoelectric Materials by Co-precipitation Method (공침법을 이용한 $Bi_2Te_3$ 열전재료의 제조)

  • Kim, Dong-Hwan;Im, Hee-Joong;Je, Koo-Chul;Kang, Young-Jin;Ahn, Jeung-Sun;Tadaoki Mitani;Nam, Tae-Hyun;Shim, Young-Jae
    • Proceedings of the Materials Research Society of Korea Conference
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    • 2003.03a
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    • pp.167-167
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    • 2003
  • 현대 산업이 발전함에 따라 전자부품의 초소형화, 고성능화가 요구되어지고 있으며, 이러한 점에 부응하기 위하여 Pottier 효과를 이용하여 국부냉각이 가능한 열전재료에 대한 많은 연구가 이루어지고 있다. 열전재료에는 사용온도 영역에 따라 여러 종류가 있지만, Bi-Te계 열전재료는 상온영역에서 가장 성능지수(Z=$\alpha$$^2$$\sigma$/$textsc{k}$, $\alpha$는 Seebeck 계수, $\sigma$는 전기전도도, $textsc{k}$는 열전도도)가 높아 각종 냉각소자로서 사용되어 지고 있다. 하지만, 초소형 전자부품의 국부냉각을 위해서는 성능지수의 향상, 특히, 저온 영역에서의 성능지수의 향상이 요구되고 있다. 본 연구에서는 Bi-Te계 열전재료의 성능지수를 향상시키기 위하여, 열전도도의 저하에 의한 성능지수의 향상을 연구목적으로 하였다 열전도도는 전자에 의한 열전도도(K$_{e}$)와 phonon에 의한 열전도도(K$_{p}$)로 이루어지며, 전기전도도에 큰 영향을 미치지 않는 결정립 사이즈영역에서 결정립의 크기를 미세화 하면, 결정입계에서의 phonon의 산란이 증가하여 phonon에 의한 열전도도를 저하시킴으로서 성능지수의 향상이 기대된다. 따라서 본 연구에서는 나노사이즈 분말의 제조에 많이 이용되며 입자크기의 조절이 용이한 공침법을 이용하여 Bi-Te계 열전재료 분말을 제조하고 열전재료에의 적용가능성을 검토하였다.

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Synthesis and Low-concentration (50 ppm) NO2 Sensing Properties of Bare and ZnO (n) Decorated TeO2 (p) Nanowires (ZnO가 첨가된 TeO2 나노와이어의 합성 및 저농도(50 ppm) 이산화질소 가스 센싱 특성)

  • Yu, Dong Jae;Shin, Ka Yoon;Oum, Wansik;Kang, Suk Woo;Kim, Eun Bi;Kim, Hyeong Min;Kim, Hyoun Woo
    • Korean Journal of Materials Research
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    • v.32 no.10
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    • pp.435-441
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    • 2022
  • We report the synthesis and gas sensing properties of bare and ZnO decorated TeO2 nanowires (NWs). A catalyst assisted-vapor-liquid-solid (VLS) growth method was used to synthesize TeO2 NWs and ZnO decoration was performed using an Au-catalyst assisted-VLS growth method followed by a subsequent heat treatment. Structural and morphological analyses using X-ray diffraction (XRD) and scanning/transmission electron microscopies, respectively, demonstrated the formation of bare and ZnO decorated TeO2 NWs with desired phase and morphology. NO2 gas sensing studies were performed at different temperatures ranging from 50 to 400 ℃ towards 50 ppm NO2 gas. The results obtained showed that both sensors had their best optimal sensing temperature at 350 ℃, while ZnO decorated TeO2 NWs sensor showed much better sensitivity towards NO2 relative to a bare TeO2 NWs gas sensor. The reason for the enhanced sensing performance of the ZnO decorated TeO2 NWs sensor was attributed to the formation of ZnO (n)/ TeO2 (p) heterojunctions and the high intrinsic gas sensing properties of ZnO.

Fabrication Process and Power Generation Characteristics of Thermoelectric Thin Film Devices for Micro Energy Harvesting (미세 열에너지 하비스팅용 열전박막소자의 형성공정 및 발전특성)

  • Oh, Tae Sung
    • Journal of the Microelectronics and Packaging Society
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    • v.25 no.3
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    • pp.67-74
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    • 2018
  • Thermoelectric thin film devices of the in-plane configuration consisting of 8 pairs of n-type $Bi_2Te_3$ and p-type $Sb_2Te_3$ legs were processed on Si submounts by electrodeposition. The thermoelectric generation characteristics of the thin film devices were investigated with respect to the apparent temperature difference ${\Delta}T$ caused by LED lighting as well as the change of the leg thickness. When ${\Delta}T$ was 7.4 K, the open circuit voltages of 6.1 mV, 7.4 mV, and 11.8 mV and the maximum output powers of 6.6 nW, 12.8 nW, and 41.9 nW were measured for the devices with the thermoelectric legs of which thickness were $2.5{\mu}m$, $5{\mu}m$, and $10{\mu}m$, respectively.

Simulation of Horizontal Thin-film Thermoelectric Cooler for the Mobile Electronics Thermal Management (모바일 전자기기의 열점 제어를 위한 수평형 박막 열전 냉각 소자의 모사 해석)

  • Park, Sangkug;Park, Hong-Bum;Joo, Young-Chang;Joo, Youngcheol
    • Journal of the Microelectronics and Packaging Society
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    • v.24 no.2
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    • pp.17-21
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    • 2017
  • Horizontal thin-film thermoelectric cooler has been simulated using a commercial software (ANSYS Workbench Thermal-electric). The thermoelectric cooler consists of thin-film n-type $Bi_2Te_3$, p-type $Sb_2Te_3$ thermoelectric elements, and Au electrode, respectively. The hot spot was placed under the center of device which represents Joule heating. Numerical analysis was conducted by geometric variable, and a maximum temperature difference of $13^{\circ}C$ was obtained. As from the simulation parameters, we presented an optimized design for high efficiency cooling.

Antireflection Structures and Optical Recording Properties of Te-based Alloy Thin Films (Te계 합금 박막의 Antireflection 구조와 광기록 특성)

  • Lee, Hyun-Yong;Choi, Dae-Young;Lee, Young-Jong;Chung, Hong-Bae
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1988.05a
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    • pp.74-77
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    • 1988
  • This paper reports the properties of antireflection structure and hole formation of Te-based systems. The optical-recording characteristics of metallic recording media are enhanced significantly by incorporating the metal(Al) layer into an antreflection trilayer structure. Due to the interface condition inherent in the design of the trilayer structure, reflectivity from holes is ranked low fraction (<10%). The hole formation is carried by $Ar^+$ Laser(488nm). For 20nsec pulse duration, hole opening power(threschold) of $(Te_{86}Se_{14})_{50}Bi_{50}$ trilayer is lower than that of monolayer that used in this experiment. Hole shapes of the whole sample were clean.

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The Thermal and Optical Properties of Te-based Antireflection structure for Optical Recording (광기록을 위한 Te-based Antireflection구조의 열적, 광학적 특성)

  • Lee, S.J.;Lee, H.Y.;Chung, H.J.;Lee, Y.J.
    • Proceedings of the KIEE Conference
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    • 1993.07b
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    • pp.1256-1258
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    • 1993
  • Optical data storage offer high density storage and archival storage capability. In this study, we selected the ablation mechanism-one of an irreversible recording system-using the antireflection trilayer(ART) structure. Optical recording medium is a $(Te_{86}Se_{14})_{50}Bi_{50}$ thin films. Actually, ART structure is fabricated and compared to monolayer structure. ART structure leads to the reduction of recording power as well as an increase in the effciency compared to the monolayer structure.

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Miniaturized Half-Circular-Slot UWB Antenna Design (소형화된 반원형-슬롯 UWB 안테나의 설계)

  • Jang, Joon-Won;Choi, Kyoung;Hwang, Hee-Yong
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.19 no.3
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    • pp.329-335
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    • 2008
  • This paper proposes a miniaturized half-circular-slot UWB antenna. Using an analysis of the neld patterns, we show that the original circular-slot UWB antenna operates on a series of multi-pole radiation based on $TE_n$ modes, and a perfect magnetic wall exists along an axis of symmetry on the antenna. Using the perfect magnetic wall we designed and fabricated the miniaturized UWB antenna on RF-60A substrate with t=0.64mm, ${\varepsilon}_r=6.15\;and\;tan\;{\delta}=0.0025$, which not only has the half size of the original but also maintains UWB characteristics. The measured gain of the miniaturized antenna is $-2.1{\sim}4.3dBi$, which is comparable with the gain, $-2.7{\sim}3.1dBi$, of the original circular-slot UWB antenna. The radiation pattern is also similar to that of the original antenna.

Diffraction Characteristics for Optical Bio-Sensor of Bi-level Grating with Mushroom Profile (버섯형 이중 격자구조의 광 바이오센서에 대한 회절 특성)

  • Ho, Kwang-Chun
    • The Journal of the Institute of Internet, Broadcasting and Communication
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    • v.22 no.2
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    • pp.129-134
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    • 2022
  • The resonant bio-sensor of bi-level grating structure with mushroom profile has been designed for operating in the near-infrared (NIR) wavelength range under transverse electric (TE) polarization. The rigorous modal transmission-line theory (MTLT) is applied to determine the optical characteristics, and the reflection resonance of the grating structure is analyzed by varying their geometrical parameters. The numerical result shows that an excited sharp Fano resonance (FR), which does not occur in single layer grating, is demonstrated. The relationship between structure parameters of bi-level grating and the reflectance spectrum in order to guarantee the appearance of FR in the designed structure is fully investigated. An optical bio-sensor with a potential sensitivity of 112.9~214.3 deg/RIU and 447 nm/RIU is designed based on the proposed structure. The proposed mushroom profile may serve as a powerful sample for the design of optical bio-sensors with a wide range of applications.