• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.23 no.2
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• pp.207-212
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• 2012

In this work, a 70/140 GHz dual-band push-push voltage controlled oscillator(VCO) has been developed based on a 0.18-${\mu}m$ SiGe BiCMOS technology. The lower band and the upper band oscillation frequency varied from 67.9 GHz to 76.9 GHz and from 134.3 GHz to 154.5 GHz, respectively, with tuning voltage swept from 0.2 to 2 V. The calibrated maximum output power for each band was -0.55 dBm and -15.45 dBm. The VCO draws DC current of 18 mA from 4 V supply.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.18 no.4 s.119
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• pp.358-363
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• 2007

The multi-band and wide-band antenna for a portable broadcasting terminal is proposed. The proposed antenna consists of two radiators with a parallel structure. The antenna has an enough wide impedance bandwidth for the DVB-H(Digital Video Broadcasting-Handheld) service band since two radiators have adjacent resonance frequencies and operates in the DAB(Digital Audio Broadcasting) service band using the third harmonic of the radiator 1. The fabricated antenna has VSWR characteristics of less than 2:1 in the frequency band $470{\sim}740\;MHz$ for DVB-H and $1,450{\sim}1,480\;MHz$ for DAB. The measured peak gain of the antenna is $1.97{\sim}4.10\;dBi$ in the DVB-H band and $1.98{\sim}2.04\;dBi$ in the DAB band.

• Journal of the Korean Institute of Telematics and Electronics S
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• v.35S no.9
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• pp.19-27
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• 1998

The Transmitter part of single RF transceiver chip for an extended GSM handset application was circuit-designed, fabricated adn evaluated. The RF-IC Chip was processed by 0.8${\mu}m$ Si BiCMOS, 80 pin TQFP of $10 {\times} 10mm$ size, 3.3V operated RF-IC reveals, in general, quite reasonable integrity and RF performances. This paper describes development resuts of RF transmitter section, which includes IF/RF up-conversion mixer, IF/RF polyphase and pre-amplifier. The test results show that RF transmitter section is well operated within frequency range of 880~915MHz, which is defined on the extended GSM(E-GSM) specification. The transmitter section also reveals moderate power consumption of 71mA and total output power of 8.2dBm.

• 한국초전도학회:학술대회논문집
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• v.10
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• pp.241-247
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• 2000

77 K와 self-field에서 22 A 의 Ic 를 갖는 길이 120 m, 19-심 Bi-2223상 선재를 제조하여, 두 개의 double pancake 코일로 구성된 proto-type 고온초전도 자석을 설계, 제작하여 이 자석에서의 4.2 K와 77 K에서의 I-V 특성과 운전 특성을 평가한 결과, 이 자석은 77 K 등온조건에서는 9.5 A 의 Ic를, 77 K 헬륨가스 속에서는 8.3 A 의 Ic를 나타내었고, 4.2 K 등온조건에서는 93.7 A 의 Ic와 102 A 의 Iq를, 4.2K헬륨가스 속에서는 88.4A의 Ic 와 92.0 A 의 Iq를 나타내어, 이 자석은 4.2 K 와 77 K 의 등온조건에서 각각 0.58 T 와 0.06 T 의 자장을 발생하였는데, 이는 해석적 방법으로 계산한 결과와 잘 일치하였다. 그리고 이 자석이 전도냉각되어 4.2 K 에서 운전될 때의 안정성 특성평가로서, Ic 보다 약간 큰 전류인 89 A 를 인가한 결과, 전류인가 후 82.6초 후에 quench가 발생하였는데, 이 quench는 네 번째 pancake의 전류도입선부 연결부에서와 약간 늦지만 첫 번째 pancake의 전류도입선부 연결부에서 거의 동시에 개시되어 전체로 파급된 것으로 사료되었는데, Ic 가 낮은 첫번째 pancake에서 더 높은 전압 강하가 나타났다. 또한 장착된 heater를 통하여 77 K 에서 8.9 A 의 전류로 운전되고 있는 코일에 146 joule 의 열을 가했을 때 quench 가 일어났는데, 이때 quench 는 방위각 방향의 Bi-2223/Ag 선재를 따라서 보다 Kapton 절연층을 관통하는 선재의 반경방향으로 훨씬 빨리 전파하였다.

• Progress in Superconductivity
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• v.3 no.1
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• pp.130-133
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• 2001

A multifilamentary Bi-2223 HTS tape for superconducting power applications was studied through the fabrication of 250-meter long tapes by the PIT(powder in tube) process. To fabricate continuous long wire, a drawing machine, a two-drum bull block and a rolled tape winding machine were developed. Especially, 250-meter long tapes were heat treated in the shape of pancake coil to reduce the heat affect zone and to achieve the high critical current. Engineering critical current density was improved through both the enhancements of critical current density by control of thermal process and the increase of filling factor by using thin Ag alloy sheath tubes less than 1.5 mm in thickness. We have made successfully 250-meter long 37 filamentary tapes with high filling factor up to 31 % employing the modified drawing and rolling technique. The critical current of 250-meter long tapes with pancake coil type was measured by transport method at self-field up to 250 gauss of center field. The measured values, based on the transport critical current at self-field, $I_{c}$ -B characteristics and magnetic field analysis, are 34 A of I$_{c}$ and 4.0 $kA/\textrm{cm}^2$ of $J_{e}$ at 250 m, 77 K, and 0 T. We also have achieved the 56 A of I$_{c}$ and 7.0 $0 kA/\textrm{cm}^2$ of$ J_{e}$ in short tapes at 77K, self-field, and 1$mutextrm{V}$/cm.

• Proceedings of the KIEE Conference
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• 2002.07b
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• pp.831-834
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• 2002

Several companies in the world are marketing superconducting wires, films and bulks. High-Tc superconducting systems using these superconductors are begun to commercialize. For the successful realization or commercialization of superconducting system used Bi-2223 wires, the database on the degradation of critical current is essentially needed. In this paper, the electrical degradation of a Bi-2223 wires is measured. The electrical degradation rate was measured after the certain time of continuous current transportation. Specimens have the length of 190cm and double-pancakes coil have the length of 10m were tested. Tested Bi-2223 wires are commercialized product has 115A of Ic. When the transportation current was 95% of Ie, the degradation of Ic was appeared after 5 hours of transportation time. When the transferred current is enough larger than Ic, Bi-2223 double pancake is damaged seriously.

• Proceedings of the KIEE Conference
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• 2011.07a
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• pp.1465-1466
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• 2011

We have studied structural and electrical properties of $(Na_{0.5}K_{0.5})NbO_3$ ceramics addition with $BiTiO_3$. The $(Na_{0.5}K_{0.5})NbO_3-BiTiO_3$ ceramics were fabricated by the conventional mixed oxide method, their dielectric and piezoelectric properties were investigated with the variations of additvie amount $BiTiO_3$. At the sintering temperature of $1130^{\circ}C$, the density, dielectric constant, grain size of 0.05mol% $BiTiO_3$ specimen showed the values of 4.69 g/$cm^3$, 898 and $24.8{\mu}m$.

• Proceedings of the KIEE Conference
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• 1996.07c
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• pp.1660-1662
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• 1996

Superconducting current lead is one of the promising applications of the oxide high-Tc superconductors, because they have the advantage of decreasing heat conduction to low temperature region, comparing with a conventional cooper alloy lead. High critical current density is a key factor for the applications such as current lead. $(Bi,Pb)_{2}Sr_{2}Ca_{2}Cu_{3}O_{x}$ high Tc superconductor hase been investigated in terms of critical current density. Bi-2223 superconducting current lead made by CIP and solid state sintering process. Bi-2223 current lead that heat treated at $836\;^{\circ}C$ for 240 h in 1/13 $PO_2$ had over $500\;A/cm^2$ of critical current density at 77K. We knew that the superconducting properties of tube type current leads were better than rods type of them. And we investigated the relation of Bi-2223 formation and heat treatment condition by XRD and SEM analysis.

• Electrical & Electronic Materials
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• v.9 no.9
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• pp.900-905
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• 1996

We have investigated dielectric properties of low fired ceramics BiNbO$_{4}$ containing 0.05[wt%] V$_{2}$O$_{5}$ and x[wt%l Cr$_{2}$O$_{3}$ (x=0, 0.2, 0.4, 0.8, 1.2). By substituting Cr for Bi, dielectric constant .epsilon.$_{r}$ and quality factor Q.f increased and temperature coefficient of resonant frecquency .tau.$_{f}$ changed to positive value. In the composition of BiNbO$_{4}$+0.05 [Wt%] V$_{2}$O$_{5}$+0.8[wt%]Cr$_{2}$O$_{3}$ sintered at 960[.deg. C], we could obtain microwave dielectric properties of .epsilon.$_{r}$=49, Q.f.simeq.3000[GHz](at 4.8[GHz]), .tau.$_{f}$.simeq.0[ppm/.deg. C]. As the above ceramics can be sintered near 960[.deg. C], it is applicable to multilayer microwave device with Ag conductor.tor.tor.tor.

• Proceedings of the Materials Research Society of Korea Conference
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• 2009.05a
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• pp.33.2-33.2
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• 2009

Dielectric and piezoelectric properties of Lead-free $(1-x)(Bi_{0.5}K_{0.5})TiO_3-xBiFeO_3$ceramics prepared by a conventional solid state reaction method were investigated in the range of x = 0~10 mol%. Piezoelectric coefficient was increased from 31 pC/N at x = 0 mol% to 64 pC/N at x = 6 mol% then decreased with increasing x. Electromechanical coupling factor ($K_p$) was increased up to 0.18 at x = 10 mol%. On the other hand, mechanical quality factor ($Q_m$) was decreased. Grain size was not much changed with various x and a single perovskite with tetragonal symmetry was maintained at all compositions forming a solid solution between $(Bi_{0.5}K_{0.5})TiO_3$ and $BiFeO_3$. Depolarization temperature ($T_d$) was gradually decreased with increasing x from $302^{\circ}C$ at x = 0 to $245^{\circ}C$ at x = 10 mol%.