• Proceedings of the Korean Magnestics Society Conference
• /
• 2011.06a
• /
• pp.17-18
• /
• 2011

• Ceramist
• /
• v.12 no.4
• /
• pp.70-77
• /
• 2009

• Proceedings of the Korean Magnestics Society Conference
• /
• 2012.05a
• /
• pp.56-57
• /
• 2012

• Proceedings of the Korean Magnestics Society Conference
• /
• 2016.11a
• /
• pp.75-75
• /
• 2016

• Analytical Science and Technology
• /
• v.14 no.4
• /
• pp.317-323
• /
• 2001

Dissolution procedures of Monsanto catalyst which has been used to produce acrylronitrile by ammoxidation of propylene have been studied. Optimum dissolution condition of the catalyst supported on silica was obtained by microwave digestion system with mixed of HCl, HF and $H_2O_2$. When a safety device was activated by increased pressure in microwave vessel, Bi, Fe, Mo, Sb and U were not volatilized even though silica was volatilized as $SiF_4$. Quantification results by this method were $SiO_2$ $50.5{\pm}0.4%$, $Sb_2O_3$ $29.6{\pm}0.6%$, $UO_2$ $10.2{\pm}0.1%$, $Fe_2O_3$ $6.1{\pm}0.1%$, $MoO_3$ $0.73{\pm}0.01%$ and $Bi_2O_3$ $0.49{\pm}0.01%$ by ICP-AES and the relative error was within ${\pm}10%$ except bismuth.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2004.11a
• /
• pp.264-267
• /
• 2004

[ $Bi_{3.25}La_{0.75}Ti_3O_{12}$ ] (BLT) thin films were prepared by using metal organic decomposition method onto the $LaNiO_3$ (LNO) bottom electrode. Both the structure and morphology of the films were analyzed by x-ray diffraction (XRD) and atomic force microscope (AFM). Even at low temperatures ranging from 450 to $650^{\circ}C$, the BLT thinfilms were successfully deposited on LNO bottom electrode and exhibited (117) orientation. The BLT thin films annealed as low as $600^{\circ}C$ showed excellent ferroelectricity, higher remanent polarization and no significant degradation of switching charge at least up to $5{\times}10^9$ switching cycles at a frequency of 100 kHz and 5 V. For the annealing temperature of $600^{\circ}C$, the remanent polarization Pr and coercive field were $23.5\;C/cm^2$ and 120 kV/cm, respectively.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2016.02a
• /
• pp.417-417
• /
• 2016

Global environmental deterioration has become more serious year by year and thus scientific interests in the renewable energy as environmental technology and replacement of fossil fuels have grown exponentially. Photoelectrochemical (PEC) cell consisting of semiconductor photoelectrodes that can harvest light and use this energy directly to split water, also known as photoelectrolysis or solar water splitting, is a promising renewable energy technology to produce hydrogen for uses in the future hydrogen economy. A major advantage of PEC systems is that they involve relatively simple processes steps as compared to many other H2 production systems. Until now, a number of materials including TiO2, WO3, Fe2O3, and BiVO4 were exploited as the photoelectrode. However, the PEC performance of these single absorber materials is limited due to their large charge recombinations in bulk, interface and surface, leading low charge separation/transport efficiencies. Recently, coupling of two materials, e.g., BiVO4/WO3, Fe2O3/WO3 and CuWO4/WO3, to form a type II heterojunction has been demonstrated to be a viable means to improve the PEC performance by enhancing the charge separation and transport efficiencies. In this study, we have prepared a triple-layer heterojunction BiVO4/WO3/SnO2 photoelectrode that shows a comparable PEC performance with previously reported best-performing nanostructured BiVO4/WO3 heterojunction photoelectrode via a facile solution method. Interestingly, we found that the incorporation of SnO2 nanoparticles layer in between WO3 and FTO largely promotes electron transport and thus minimizes interfacial recombination. The impact of the SnO2 interfacial layer was investigated in detail by TEM, hall measurement and electrochemical impedance spectroscopy (EIS) techniques. In addition, our planar-structured triple-layer photoelectrode shows a relatively high transmittance due to its low thickness (~300 nm), which benefits to couple with a solar cell to form a tandem PEC device. The overall PEC performance, especially the photocurrent onset potential (Vonset), were further improved by a reactive-ion etching (RIE) surface etching and electrocatalyst (CoOx) deposition.

• Journal of the Korean institute of surface engineering
• /
• v.45 no.2
• /
• pp.61-69
• /
• 2012

Alloys of Fe-(5, 10, 15)Al and Fe-(10, 20, 30, 40)Cr were corroded at 700 and $800^{\circ}C$ for 70 hr in either atmospheric air or 1 atm of Ar+$1%SO_2$ gases. In these atmospheres, Fe-5Al and Fe-10Cr alloys displayed poor corrosion resistance. In atmospheric air, Fe-5Al alloys formed oxide nodules, while Fe-10Cr alloys formed thick scales and internal oxides. In Ar+$1%SO_2$ gases, Fe-5Al and Fe-10Cr alloys formed thick, nonadherent bi-layered scales, which grew primarily by the outward diffusion of Fe ions and inward diffusion of oxygen and sulfur ions. By contrast, in atmospheric air and Ar+$1%SO_2$ gases, Fe-(10, 15)Al and Fe-(20, 30, 40)Cr alloys displayed good corrosion resistance by forming $Al_2O_3$ and $Cr_2O_3$ layers on the surface, respectively.

• Journal of the Korean Magnetics Society
• /
• v.24 no.3
• /
• pp.71-75
• /
• 2014

Ground state energy levels of the $Fe^{3+}$ paramagnetic impurity ion in stoichiometric $LiTaO_3$ and in congruent $LiTaO_3$ single crystals were calculated with electron paramagnetic resonance constants. Energy levels between six energy levels were obtained with spectroscopic splitting parameter g and zero field splitting constant D for $Fe^{3+}$ ion. The energy diagrams of $Fe^{3+}$ ion were different from different magnetic field directions ([100], [001], [111]) when magnetic field increases. The calculated ZFS energies of $Fe^{3+}$ ion in stoichiometric and congruent $LiTaO_3$ single crystals for ${\mid}{\pm}5/2$ > ${\leftrightarrow}{\mid}{\pm}3/2$ > and ${\mid}{\pm}3/2$ > ${\leftrightarrow}{\mid}{\pm}1/2$ > transitions were 12.300 GHz and 6.150 GHz, and 59.358 GHz and 29.679 GHz, respectively. It turns out that energy levels of $Fe^{3+}$ paramagnetic impurity in $LiTaO_3$ crystal are different from different crystal growing condition.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.15 no.5
• /
• pp.383-387
• /
• 2002

N-channel metal-ferroelectric-insulator-semiconductor field-effect-transistors (MFISFET's) by using $SrBi_2Ta_2O_9$/Silicon Nitride/Si (100) structure were fabricated. The fabricated devices exhibit comfortable memory windows, fast switching speeds, good fatigue resistances, and long retention times that are suitable for advanced ferroelectric memory applications. The estimated switching time and polarization ($2P_r$) of the fabricated FET measured at applied electric field of 376 kV/cm were less than 50 ns and about 1.5 uC/$\textrm{cm}^2$, respectively. The magnitude of on/off ratio indicating the stored information performance was maintained more than 3 orders until 3 days at room temperature. The $I_DV_G$ characteristics before and after being subjected to $10^11$ cycles of fatigue at a frequency of 1 MHz remained almost the same except a little distortion in off state.