• Transactions on Electrical and Electronic Materials
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• v.6 no.6
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• pp.289-293
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• 2005

We have fabricated superconductor ceramics by chemical process. A high Tc superconductor with a nominal composition of $Bi_2Sr_2Ca_2Cu_3O_y$ was prepared by the organic metal salts method. Experimental results suggest that the intermediate phase formed before the formation of the superconductor phase may be the most important factor. The relation between electromagnetic properties of Bi HTS and external applied magnetic field was studied. The electrical resistance of the superconductor was increased by the application of the external magnetic field. But the increase in the electrical resistance continues even after the removal of the magnetic field. The reason is as follows; the magnetic flux due to the external magnetic field penetrates through the superconductor and the penetrated magnetic flux is trapped after the removal of the magnetic flux.

• Proceedings of the Materials Research Society of Korea Conference
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• 2002.11a
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• pp.45-45
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• 2002

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.12
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• pp.1135-1140
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• 2008

Bismuth-telluride based thin film materials are grown by Metal Organic Chemical Vapor Deposition(MOCVD). A planar type thermoelectric device has been fabricated using p-type $Bi_{0.4}Sb_{1.6}Te_3$ and n-type $Bi_2Te_3$ thin films. Firstly, the p-type thermoelectric element was patterned after growth of $4{\mu}m$ thickness of $Bi_{0.4}Sb_{1.6}Te_3$ layer. Again n-type $Bi_2Te_3$ film was grown onto the patterned p-type thermoelectric film and n-type strips are formed by using selective chemical etchant for $Bi_2Te_3$. The top electrical connector was formed by thermally deposited metal film. The generator consists of 20 pairs of p- and n-type legs. We demonstrate complex structures of different conduction types of thermoelectric element on same substrate by two separate runs of MOCVD with etch-stop layer and selective etchant for n-type thermoelectric material. Device performance was evaluated on a number of thermoelectric devices. To demonstrate power generation, one side of the sample was heated by heating block and the voltage output measured. As expected for a thermoelectric generator, the voltage decreases linearly, while the power output rises to a maximum. The highest estimated power of $1.3{\mu}W$ is obtained for the temperature difference of 45 K. we provide a promising procedure for fabricating thin film thermoelectric generators by using MOCVD grown thermoelectric materials which may have nanostructure with high thermoelectric properties.

• Journal of Sensor Science and Technology
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• v.5 no.6
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• pp.25-34
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• 1996

In this paper, we have designed signal conditioning circuitry for piezoresistive pressure sensor. Signal conditioning circuitry consists of voltage reference circuit for sensor driving voltage and instrument amplifier for sensor signal amplification. Signal conditioning circuitry is simulated using HSPICE in a single poly double metal $1.5\;{\mu}m$ BiCMOS technology. Simulation results of band-gap reference circuit showed that temperature coefficient of $21\;ppm/^{\circ}C$ at the temperature range of $0\;{\sim}\;70^{\circ}C$ and PSRR of 80 dB. Simulation results of BiCMOS amplifier showed that dc voltage gain, offset voltage, CMRR, CMR and PSRR are outperformed to CMOS and Bipolar, but power dissipation and noise voltage were more improved in CMOS than BiCMOS and Bipolar. Designed signal conditioning circuitry showed high input impedance, low offset and good CMRR, therefore, it is possible to apply sensor and instrument signal conditioning circuitry.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.142-142
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• 2009

Bismuth-substituted yttrium iron garnet(Bi-YIG; $Bi_xY_{3-x}Fe_5O_{12}$, x=0, 0.5, 1.0, 1.5, 2.0) thin films were fabricated on glass substrates using a metal organic decomposition (MOD) method. The dielectric property was measured by NSMM(Near-field scanning microwave microscopy) system that operating frequency is 4 Ghz. The obtained reflection coefficient $S_{11}$ of the Bi:YIG thin films with different bismuth concentration was increased as the bismuth concentration increased due to the lattice mismatch and vacancy of ions because of a lager ionic radius of bismuth ion than yttrium ion.

• Progress in Superconductivity
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• v.6 no.2
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• pp.124-128
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• 2005

Homogeneous and fine powders for Bi-2223 tape were prepared by ultrasonic spray pyrolysis (SP) method from an aqueous solution of metal nitrates. Bi-2223 precursor powders were synthesized with various solutes concentration and pyrolysis temperature. The synthesized precursor powders had a narrow particle size distribution and an average particle size was $\~{\cal}um$. The reactivity of precursor powder by SP method is very high, attributed to the fine and narrow particle size distribution. Bi-2223/Ag tape was prepared using PIT method and followed by various sintering conditions. The precursor powder by SP method promoted a very quick formation of the Bi-2223 phase for short sintering time while the secondary phase such as large AEC phase and $Ca_2PbO_4$ were minimized for SP tapes.

• 한국초전도학회:학술대회논문집
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• v.11
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• pp.52-52
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• 2001

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.6
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• pp.678-682
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• 2004

Generally Bi-2223/Ag tapes have a broad S/N transition region and their sheath is a good electric conductor. In this study, the current distribution between superconductor and metal sheath in HTS tapes were investigated. AC with its peak value above 10 times $I_{c}$ was applied to HTS tapes for around 6 cycles and V-I characteristics were measured. Using the resistance of the sheath and V-I curves, the current distribution between superconductor and metal sheath was calculated. When 150 $A_{p}$ was applied, more than 2/3 of the current flows through superconductor. However, in the case of 304 $A_{p}$, most of the applied current came to flow through the metal sheath at the 6th cycle.e.e.e.

• Korean Journal of Materials Research
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• v.12 no.11
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• pp.835-839
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• 2002

Metal-Ferroelectric-Metal(MFM) capacitors were prepared using $Bi_{3.3}$ $La_{0.7}$ $Ti_3$$O_{12}$ (BLT) ferroelectric thin films which were spin coated on $Pt/Ti/SiO_2$/Si substrates by the Sol-Gel method. BLT thin films annealed at above $650^{\circ}C$ showed polycrystalline structures with typical c-axis preferred orientation. The grain size and surface roughness were increased as the annealing temperature increased from $650^{\circ}C$ to $700^{\circ}C$. In addition, the full width at half maximum (FWHM) values were decreased with increasing annealing temperatures, indicating the improvement of crystallinity. The remanent polarization (2Pr= $Pr^{+}$ $+Pr^{-) }$ and leakage current of the BLT film annealed at $650^{\circ}C$ were about 29.3 $\mu$C/cm$^2$ and $2.3$\times$10^{-8}$$ A/cm^2$ at 3V. There were no distinct changes in the retention charges after $10^{10}$ polarization switching cycles, showing good fatigue property of the annealed BLT films.

• Progress in Superconductivity
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• v.7 no.2
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• pp.179-183
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• 2006

As a material for SFCL(Superconducting Fault Current Limiter), BSCCO tube with metal stabilizer is a promising candidate, assuring the stability and large power capacity, For the application, the proper soldering technique, which overcome the difficulties of the joining between BSCCO and metal stabilizer, is required. In this study, after soldering In-Bi solder and In-Sn solder with BSCCO superconductor, welding properties between BSCCO and solders were investigated. Because ceramic materials is difficult to weld, Ag electro-plating on BSCCO 2212 is used for intermetallic layer. To find out the best welding condition for superconductor, soldering is tested in the maximum temperature from $155^{\circ}C\;to\;165^{\circ}C$ in the reflow oven. By investigating the composition and thickness of IMC (lntermetallic Compound) created in the reaction of Ag with solder, we analyzed the welding properties of High-Tc superconductor from a micro point of view.