• Journal of the Microelectronics and Packaging Society
• /
• 제16권4호
• /
• pp.23-28
• /
• 2009

We investigated the wafer-level MEMS capping process for which cavity formation in Si wafer was not required. Ni caps were formed by electrodeposition on 4" Si wafer and Ni rims of the Ni caps were bonded to the Cu rims of bottom Si wafer by using epoxy. Then, top Si wafer was debonded from the Ni cap structures by using SnBi layer of low melting temperature. As-evaporated SnBi layer was composed of double layers of Bi and Sn due to the large difference in vapor pressures of Bi and Sn. With keeping the as-evaporated SnBi layer at $150^{\circ}C$ for more than 15 sec, SnBi alloy composed of eutectic phase and Bi-rich $\beta$ phase was formed by interdiffusion of Sn and Bi. Debonding between top Si wafer and Ni cap structures was accomplished by melting of the SnBi layer at $150^{\circ}C$.

• Journal of the Korean institute of surface engineering
• /
• 제49권1호
• /
• pp.40-45
• /
• 2016

Recently, $Bi_2Te_3$-based alloys are the best thermoelectric materials near to room temperature, so it has been researched to achieve increased figure of merit(ZT). Ternary compounds such as Bi-Te-Se and Bi-Sb-Te have higher thermoelectric property than binary compound Bi-Te and Sb-Te, respectively. Compared to DC plating method, pulsed electrodeposition is able to control parameters including average current density, and on/off pulse time etc. Thereby the morphology and properties of the films can be improved. In this study, we electrodeposited n-type ternary Cu-doped $Bi_2(Te-Se)_3$ thin film by modified pulse technique at room temperature. To further enhance thermoelectric properties of $Bi_2(Te-Se)_3$ thin film, we optimized Cu doping concentration in $Bi_2(Te-Se)_3$ thin film and correlated it to electrical and thermoelectric properties. Thus, the crystal, electrical, and thermoelectric properties of electrodeposited $Bi_2(Te-Se)_3$ thin film were characterized the XRD, SEM, EDS, Seebeck measurement, and Hall effect measurement, respectively. As a result, the thermoelectric properties of Cu-doped $Bi_2(Te-Se)_3$ thin films were observed that the Seebeck coefficient is $-101.2{\mu}V/K$ and the power factor is $1412.6{\mu}W/mK^2$ at 10 mg of Cu weight. The power factor of Cu-doped $Bi_2(Te-Se)_3$ thin film is 1.4 times higher than undoped $Bi_2(Te-Se)_3$ thin film.

• Journal of the Korean Ceramic Society
• /
• 제52권1호
• /
• pp.1-8
• /
• 2015

Thermoelectric (TE) technology is becoming increasingly important in applications of solid-state cooling and renewable energy sources. $Bi_2Te_3$-based TE materials are widely used in small-scale cooling and temperature control applications; however, higher levels of TE performance are required for new applications such as large-scale cooling (e.g., domestic refrigerators or air conditioners) and for highly efficient power generation system. Recently, the TE performance of $Bi_2Te_3$-based materials has been remarkably enhanced by the introduction of nanostructuring technologies which can be used to prepare TE raw materials. Because it takes into account the theoretical and experimental characteristics, nanostructuring has been shown to be one of the most promising ways to realize the simultaneous control of the electronic and thermal transport properties. In this review, emphasis is placed on bulk-type nanostructured $Bi_2Te_3$-based TE materials. Nanostructuring technologies for enhanced TE performance are summarized, and a few important strategies are presented.

• Journal of the Korean Ceramic Society
• /
• 제51권4호
• /
• pp.278-282
• /
• 2014

Due to high ionic conductivity and favorable oxygen electrocatalysis, doped $Bi_2O_3$ systems are promising candidates as solid oxide fuel cell cathode materials. Recently, several researchers reported reasonably low cathode polarization resistance by adding electronically conducting materials such as (La,Sr)$MnO_3$ (LSM) or Ag to doped $Bi_2O_3$ compositions. Despite extensive research efforts toward maximizing cathode performance, however, the inherent catalytic activity and electrochemical reaction pathways of these promising materials remain largely unknown. Here, we prepare a symmetrical structure with identically sized $Y_{0.5}Bi_{1.5}O_3$/LSM composite electrodes on both sides of a YSZ electrolyte substrate. AC impedance spectroscopy (ACIS) measurements of electrochemical cells with varied cathode compositions reveal the important role of bismuth oxide phase for oxygen electrocatalysis. These observations aid in directing future research into the reaction pathways and the site-specific electrocatalytic activity as well as giving improved guidance for optimizing SOFC cathode structures with doped $Bi_2O_3$ compositions.

• Progress in Superconductivity
• /
• 제6권2호
• /
• pp.124-128
• /
• 2005

Homogeneous and fine powders for Bi-2223 tape were prepared by ultrasonic spray pyrolysis (SP) method from an aqueous solution of metal nitrates. Bi-2223 precursor powders were synthesized with various solutes concentration and pyrolysis temperature. The synthesized precursor powders had a narrow particle size distribution and an average particle size was $\~{\cal}um$. The reactivity of precursor powder by SP method is very high, attributed to the fine and narrow particle size distribution. Bi-2223/Ag tape was prepared using PIT method and followed by various sintering conditions. The precursor powder by SP method promoted a very quick formation of the Bi-2223 phase for short sintering time while the secondary phase such as large AEC phase and $Ca_2PbO_4$ were minimized for SP tapes.

• Proceedings of the Korean Powder Metallurgy Institute Conference
• /
• 한국분말야금학회 2006년도 Extended Abstracts of 2006 POWDER METALLURGY World Congress Part2
• /
• pp.1223-1224
• /
• 2006

The p-type $(Bi_{0.2}Sb_{0.8})_2Te_3/(Pb_{0.7}Sn_{0.3})$Te functional gradient material (FGM) was fabricated by hot-pressing the mechanically alloyed $(Bi_{0.2}Sb_{0.8})_2Te_3$ and the 0.5 at% $Na_2Te-doped$ $(Pb_{0.7}Sn_{0.3})Te$ powders. Also, the n-type $Bi_2(Te_{0.9}Se_{0.1})_3/PbTe$ FGM was processed by hot-pressing the mechanically alloyed $Bi_2(Te_{0.9}Se_{0.1})_3$ and the 0.3 wt% Bi-doped PbTe powders. With ${\Delta}T$ larger than $300^{\circ}C$, the p-type $(Bi_{0.2}Sb_{0.8})_2Te_3/(Pb_{0.7}Sn_{0.3})Te$ FGM exhibited larger thermoelectric output power than those of the $(Bi_{0.2}Sb_{0.8})_2Te_3$ and the 0.5 at% $Na_2Te-doped$ $(Pb_{0.7}Sn_{0.3})Te$ alloys. For the n-type $Bi_2(Te_{0.9}Se_{0.1})_3/PbTe$ FGM, the thermoelectric output power superior to those of the $Bi_2(Te_{0.9}Se_{0.1})_3$ and the 0.3 wt% Bi-doped PbTe was predicted at ${\Delta}T$ larger than $300^{\circ}C$.

• Proceedings of the Materials Research Society of Korea Conference
• /
• 한국재료학회 2002년도 춘계 학술발표강연 및 논문개요집
• /
• pp.129-129
• /
• 2002

• Proceedings of the Materials Research Society of Korea Conference
• /
• 한국재료학회 1996년도 재료학회 춘계학술발표회
• /
• pp.111-111
• /
• 1996

• Proceedings of the Materials Research Society of Korea Conference
• /
• 한국재료학회 1994년도 춘계 학술발표 강연 및 논문 개요집
• /
• pp.46-47
• /
• 1994

• Proceedings of the Materials Research Society of Korea Conference
• /
• 한국재료학회 1997년도 한국재료학회 춘계학술발표회
• /
• pp.87-87
• /
• 1997