• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.11
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• pp.806-809
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• 2013

In this study, $(Na_{0.525}K_{0.443}Li_{0.037})(Nb_{0.883}Sb_{0.08}Ta_{0.037})O_3+0.10\;wt%Bi_2O_3+0.35\;wt%B_2O_3$ ceramics were prepared by conventional soild-state sintering process. The specimens were sintered at temperature range from $1,060^{\circ}C$ to $1,100^{\circ}C$. XRD (X-ray diffractron), SEM (scanning electron microscope) were used to analyze the crystal structure and microstructural sproperties of specimens. And also, $T_{O-T}$, TC were observed by the mesurement of temperature dependence of dielectric constant. Excellect physical properties of the piezoelectric constant $d_{33}$= 170 pC/N, electromechanical coupling factor kp= 0.312, Tc= $315^{\circ}C$ were obtained, respectively, from the specimen sintered at $1,080^{\circ}C$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.28 no.10
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• pp.615-619
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• 2015

In this study, in order to develop the composition ceramics with the excellent electrocaloric properties, 8/65/35 PLZT ceramics were fabricated by the conventional solid-state method with the addition of $Bi_2O_3$, CuO, $Li_2CO_3$ and the variation of sintering temperature from $930^{\circ}C$ to $990^{\circ}C$. The XRD pattern of all specimens indicated general perovskite structure and the rhombohedral phase were observed. Curie temperature ($T_c$) of all specimens was observed in the vicinity of about $190^{\circ}C$. Density, coercive field and remnant polarization of the specimen sintered at $950^{\circ}C$ was $7.55g/cm^3$, 8.895 kV/cm, $11.22{\mu}C/cm^2$, respectively. EC effect of PLZT ceramics was measured by indirect method and the temperature change ${\Delta}T$ due to the electrocaloric effect was calculated by Maxwell's relations. ${\Delta}T$ of ceramic sintered at $950^{\circ}C$ was $0.21^{\circ}C$ under application of 40 kV/cm at $190^{\circ}C$.

• Journal of the Korean Society of Radiology
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• v.15 no.5
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• pp.697-704
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• 2021

It is hard to get Filaments which are materials of the 3D printing Fused Deposition Modeling(FDM) method as radiation shielding in Korea. and also related research is insufficient. This study aims to provide basic data for the development of radiation shields using 3D printing by evaluating the physical properties and radiation shielding capabilities of filaments containing metal particles. after selecting five metal filaments containing metal particle reinforcement materials, the radiation shielding rate was calculated according to the Korean Industrial Standard's protective equipment test method to evaluate physical properties such as tensile strength, density, X-ray Diffraction(XRD), and weight measurement using ASTM's evaluation method. In the tensile strength evaluation, PLA + SS was the highest, ABS + W was the lowest, and ABS + W is 3.13 g/cm³ which value was the highest among the composite filaments in the density evaluation. As a result of the XRD, it may be confirmed that the XRD peak pattern of the particles on the surface of the specimen coincides with the pattern of each particle reinforcing material powder metal, and thus it was confirmed that the printed specimen contained powder metal. The shielding effect for each 3D printed composite filament was found to have a high shielding rate in proportion to the effective atomic number and density in the order of ABS + W, ABS + Bi, PLA+SS, PLA + Cu, and PLA + Al. In this study, it was confirmed that the metal particle composite filament containing metal powder as a reinforcing material has radiation shielding ability, and the possibility of using a radiation shielding filament in the future.

• Proceedings of the Korean Society for Technology of Plasticity Conference
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• 2000.10a
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• pp.55-61
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• 2000

Tungsten heavy metal is characterized bi a high density and novel combination of strength and ductility. Among them, 90W-7Ni-3Fe is used for applications, where the high specific weight of the material plays an important role. They are used as counterweights, rotating inertia members, as well as for defense purposes(kinetic energy penetrators, etc.). Because of these applications, it is essential to detemine the dynamic characteristics of tungsten alloy. In this paper, Explicit FEM(finite element method) is employed to investigate the dynamic characteristics of tungsten heavy metal under base of stress wave propagation theory for SHPB, and the model of specimen is divided into two parts to understand the phenomenon that stress wave penetrates through each tungsten base and matrix. This simulation results were compared to experimental one and through this program the dynamic stress-strain curve of tungsten heavy metal can be obtained using quasi static stress-strain curve of pure tungsten and matrix.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.24 no.3
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• pp.127-132
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• 2014

$Y_2O_3$-BN ceramic composites were fabricated from the slurries of yttria powder with average particle size of 3~10 ${\mu}m$. The slurry was fabricated by mixing PVA binder, NaOH for Ph control, PEG, BN powder and $Y_2O_3$ powder. The mixed $Y_2O_3$ powders were obtained by spray drying process from the slurry. The $Y_2O_3$-BN composite specimen was shaped in size of ${\O}14mm$ and then sintered at $1550^{\circ}C$ and $1600^{\circ}C$, respectively. The characteristics, microstructure, purities, densities, bulk resistance, thermal expansion, hardness and plasma resistance of the $Y_2O_3$-BN composites were investigated with the function of BN contents and sintering temperature.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.3
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• pp.227-231
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• 2008

In this study, in order to improve the electrical properties of low temperature sintering piezoelectric ceramics, $[0.05Pb(Zn_{1/2}W_{1/2})-0.07Pb(Mn_{1/3}Nb_{2/3})-0.088Pb(Zr_{0.48}Ti_{0.52})]O_3$(abbreviated as PZW-PMN-PZT) ceramic systems were fabricated using $Bi_2O_3$, CuO and $Li_2CO_3$ as sintering aids and then their piezoelectric and dielectric properties were investigated according to the amount of $Li_2CO_3$ and post-annealing process. Post-annealing process enhanced all physical properties except for mechanical quality factor (Qm). 0.2 wt% $Li_2CO_3$ added and post-annealed specimen showed the excellent values suitable for low loss piezoelectric actuator application as follow: the density = 7.86 $g/cm^3$ electromechanical coupling factor (kp) = 0.575, piezoelectric constant $d_{33}$ = 370 pC/N, dielectric constant ($\varepsilon_r$) = 1546, and mechanical quality factor (Qm) = 1161, respectively.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.2
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• pp.136-141
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• 2005

In this study, in order to develop the low temperature sintering ceramics for multilayer piezoelectric transformer, PCW-PMN-PZT ceramics using Li$_2$CO$_3$, Bi$_2$O$_3$, and CuO as sintering aids were manufactured according to the amount of MnO$_2$ addition. Their microstructural, dielectric and piezoelectric properties were investigated. When the sintering aids were added, specimens could be sintered below 95$0^{\circ}C$, but mechanical qualify factor decreased. Therefore, MnO$_2$ was added excessively to the PCW-PMN-PZT ceramics to increase mechanical quality factor. At the sintering temperature of 95$0^{\circ}C$, the density, dielectric constant($\varepsilon$$_{r}$), electromechanical coupling factor(k$_{p}$), mechanical quality factor(Q$_{m}$) and Curie temperature(T$_{c}$) of 0.1 wt% MnO$_2$ added specimen showed the optimal values of 7.75 g/㎤, 1503, 0.57, 1502, and 337, respectively, for multilayer piezoelectric transformer application.ation.n.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.236-236
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• 2008

(Bi,La)$Ti_3O_{12}$(BLT) thin film is one of the most attractive materials for ferroelectric random access memory (FRAM) applications due to its some excellent properties such as high fatigue endurance, low processing temperature, and large remanent polarization [1-2]. The authors firstly investigated and reported the damascene process of chemical mechanical polishing (CMP) for BLT thin film capacitor on behalf of plasma etching process for fabrication of FRAM [3]. CMP process could prepare the BLT capacitors with the superior process efficiency to the plasma etching process without the well-known problems such as plasma damages and sloped sidewall, which was enough to apply to the fabrication of FRAM [2]. BLT-CMP characteristics showed the typical oxide-CMP characteristics which were related in both pressure and velocity according to Preston's equation and Hernandez's power law [2-4]. Good surface roughness was also obtained for the densification of multilevel memory structure by CMP process [3]. The well prepared BLT capacitors fabricated by CMP process should have the sufficient ferroelectric properties for FRAM; therefore, in this study the electrical properties of the BLT capacitor fabricated by CMP process were analyzed with the process parameters. Especially, the effects of CMP pressure, which had mainly affected the removal rate of BLT thin films [2], on the electrical properties were investigated. In order to check the influences of the pressure in eMP process on the ferroelectric properties of BLT thin films, the electrical test of the BLT capacitors was performed. The polarization-voltage (P-V) characteristics show a decreased the remanent polarization (Pr) value when CMP process was performed with the high pressure. The shape of the hysteresis loop is close to typical loop of BLT thin films in case of the specimen after CMP process with the pressures of 4.9 kPa; however, the shape of the hysteresis loop is not saturated due to high leakage current caused by structural and/or chemical damages in case of the specimen after CMP process with the pressures of 29.4 kPa. The leakage current density obtained with positive bias is one order lower than that with negative bias in case of 29.4 kPa, which was one or two order higher than in case of 4.9 kPa. The high pressure condition was not suitable for the damascene process of BLT thin films due to the defects in electrical properties although the better efficiency of process. by higher removal rate of BLT thin films was obtained with the high pressure of 29.4 kPa in the previous study [2].

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.24 no.6
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• pp.268-273
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• 2014

$Y_2O_3$ ceramic specimens were fabricated from the granular powder, obtained by spray drying process from the slurry. The slurry was prepared by mixing PVA binder, NaOH for Ph control, PEG and $Y_2O_3$ powder. The $Y_2O_3$ specimen was shaped in size of ${\phi}14mm$ and then sintered at $1650^{\circ}C$. The characteristics, microstructure, densities and plasma resistance of the $Y_2O_3$ specimens were investigated with the function of forming pressure and sintering time. $Y_2O_3$ specimens were exposed under the $CHF_3/O_2/Ar$ plasma, the dry etching treatment of specimens was carried out by the physical reaction etching of $Ar^+$ ion beam and the chemical reaction etching of $F^-$ ion decomposed from $CHF_3$. With increasing sintering time, $Y_2O_3$ specimens showed relatively high density and strong resistance in plasma etching test.