• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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• pp.1508-1510
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• 2009

In this work, we have compared OLED devices made of blended MEH-PPV/Ruburene mixture and MEH-PPV/Rubrene bi-layer structure devices. The emission layers were made with two different ways - one with gravure printed single layer of blended mixture of MEH-PPV and rubrene, the other with gravure printed bilayers of MEH-PPV and rubrene. Both brightness and efficiency with gravure printed bi-layer devices were higher than blended devices. In this work, we demonstrated that organic bi-layers can be formed with gravure printing technology and higher efficiency can be achieved with bi-layer structure than with blended single layer structure.

• 마이크로전자및패키징학회지
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• 제16권4호
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• pp.23-28
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• 2009

Si 기판의 캐비티 형성이 불필요한 웨이퍼-레벨 MEMS capping 공정을 연구하였다. 4인치 Si 웨이퍼에 Ni 캡을 전기도금으로 형성하고 Ni 캡 rim을 Si 하부기판의 Cu rim에 에폭시 본딩한 후, SnBi debonding 층을 이용하여 상부기판을 Ni 캡 구조물로부터 debonding 하였다. 진공증착법으로 형성한 SnBi debonding 층은 Bi와 Sn 사이의 심한 증기압 차이에 의해 Bi/Sn의 2층 구조로 이루어져 있었다. SnBi 증착 층을 $150^{\circ}C$에서 15초 이상 유지시에는 Sn과 Bi 사이의 상호 확산에 의해 eutectic 상과 Bi-rich $\beta$상으로 이루어진 SnBi 합금이 형성되었다. $150^{\circ}C$에서 유지시 SnBi의 용융에 의해 Si 기판과 Ni 캡 구조물 사이의 debonding이 가능하였다.

• 대한용접접합학회:학술대회논문집
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• 대한용접접합학회 2007년 추계학술발표대회 개요집
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• pp.282-284
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• 2007

The superconductor characteristics of BSCCO spray films by Heat treatment was studied. $Bi_2Sr_2CaCu_2O_x$(Bi-2212) is high-Tc superconductor(HTS) coatings have been prepared by Heat treatment. Where high current carrying capabilities are required and therefore thick film and bulk material are called for, the Bi2Sr2Ca1Cu2O8-d(Bi-2212)compound has evoleved as one of the most promising. and the Bi-2212 HTS coating layer is synthesized through the peritectic reaction between Sr-Ca-Cu oxide coating layer and Bi-Cu oxide coating layer by partial melting process. The superconducting characteristics depends on the spray distance which was related to the spray particle melt. The Bi-2212 HTS layer consists of the whisker growth and secondary phase in 2212 layer were observed.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 하계학술대회 논문집
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• pp.613-616
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• 2001

Bi$_2$Sr$_2$CuO$_{x}$ thin films have been fabricated by atomic layer-by-layer deposition using ion beam sputtering(IBS) method. During the deposition, 10 and 90 wt%-ozone/oxygen mixture gas of typical pressure of 1~9$\times$10$^{-5}$ Torr are supplied with ultraviolet light irradiation for oxidation. XRD and RHEED investigations reveal out that a buffer layer with some different compositions is formed at the early deposition stage of less than 10 units cell and then Bi-2201 oriented along the c-axis is grown.n.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1999년도 추계학술대회 논문집
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• pp.77-80
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• 1999

Bi$_2$Sr$_2$CuO$\sub$x/ thin films have been fabricated by atomic layer-by-layer deposition using ion beam sputtering(IBS) method. XRD and RHEED investigations reveal that a buffer layer with compositions different from Bi-2201 is formed at the early deposition stage of less than 10 units cell and then Bi-2201 oriented along the c-axis is grown.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 하계학술대회 논문집
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• pp.212-217
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• 2000

Bi$_2$Sr$_2$CuO$_{x}$(Bi-2201) thin films have been fabricated by atomic layer-by-layer deposition using ion beam sputtering(IBS) process. During the deposition, 14 wt%-ozone/oxygen mixture gas of typical pressure of 5.0$\times$10$^{-5}$ Torr is supplied with ultraviolet light irradiation for oxidation. XRD and RHEED investigations reveal that a buffer layer with compositions different from Bi-2201 is formed at the early deposition stage of less than 10 units cell and then Bi-2201 oriented along the c-axis is grown.n.

• 한국전기전자재료학회논문지
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• 제14권10호
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• pp.855-860
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• 2001

Bi$_2$Sr$_2$CuO$_{x}$(Bi-2201) thin film were fabricated by atomic layer-by -layer deposition using an ion beam sputtering method. 10 wt% and 90 wt% ozone mixed oxygen were used with ultraviolet light irradiation to assist oxidation. XRD and RHEED investigations revealed that a buffer layer is formed at the early stage of deposition (less than 10 unit cell), and then c-axis oriented Bi-2201 grows on top of it.t.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2002년도 추계학술대회 논문집 전기물성,응용부문
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• pp.119-121
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• 2002

$Bi_2Sr_2CuO_x$ thin films were fabricated by atomic layer-by-layer deposition using an ion beam sputtering method, 10 wt% and 90 wt% ozone mixed with oxygen were used with ultraviolet light irradiation to assist oxidation. At early stages of the atomic layer by layer deposition, two dimensional epitaxial growth which covers the substrate surface would be suppressed by the stress and strain caused by the lattice misfit, then three dimensional growth takes place. Since Cu element is the most difficult to oxidize, only Sr and Bi react with each other predominantly, and forms a buffer layer on the substrate in an amorphous-like structure, which is changed to $SrBi_2O_4$ by in-situ anneal.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집 Vol.14 No.1
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• pp.281-283
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• 2001

$Bi_{2}Sr_{2}CuO_{x}$(Bi-2201) thin films were fabricated by atomic layer-by-layer deposition using an ion bearn sputtering method. 10 wt% and 90 wt% ozone mixed with oxygen were used with ultraviolet light irradiation to assist oxidation. At early stages of the atomic layer by layer deposition. two dimensional epitaxial growth which covers the substrate surface would be suppressed by the stress and strain caused by the lattice misfit. then three dimensional growth takes place. Since Cu element is the most difficult to oxidize. only Sr and Bi react with each other predominantly. and forms a buffer layer on the substrate in an amorphous-like structure. which is changed to $SrBi_{2}O_{4}$ by in-situ anneal.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집
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• pp.281-283
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• 2001

Bi$_2$Sr$_2$CuO$\_$x/(Bi-2201) thin films were fabricated layer-by-layer deposition using an ion beam sputtering method. 10 wt% and 90 wt% ozone mixed with oxygen were used ultraviolet light irradiation to assist oxidation. At early stages of the atomic layer by layer deposition, two dimensional epitaxial growth which covers the substrate surface would be suppressed by the stress and strain caused by the lattice misfit, then three dimensional growth takes place. Since Cu element is the most difficult to oxidize, only Sr and Bi react with each other predominantly, and forms a buffer layer on the substrate in an amorphous-like structure, which is changed to SrBi$_2$O$_4$ by in-situ anneal.