• Title/Summary/Keyword: Bi-2201

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Influence of the Solid Solution for Crystalline Phase on the Characterization of $Bi_2Sr_2Ca{_{n-1}}Cu_nO_x$(n=0,1,2) Thin Films (결정상에 대한 고용체가 $Bi_2Sr_2Ca{_{n-1}}Cu_nO_x$(n=0,1,2) 박막의 특성에 미치는 영향)

  • Yang, Seung-Ho;Lee, Ho-Shik;Park, Yong-Pil
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.11 no.6
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    • pp.1115-1121
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    • 2007
  • [ $Bi_2Sr_2Ca{_{n-1}}Cu_nO_x$ ](n=0,1,2) thin fans have been fabricated by co-deposition at an ultra-low growth rate using ion beam sputtering(IBS) method. Bi 2212 phase appeared in the temperature range of 750 and $795^{\circ}C$ and single phase of Bi 2201 existed in the lower region than $785^{\circ}C$. Whereas, $PO_3$ dependance on structural formation was scarcely observed regardless of the pressure variation. And high quality of c-axis oriented Bi 2212 thin film with $T_c$(onset) of about 90 K and $T_c$(zero) of about 45 K is obtained. Only a small amount of CuO in some films was observed as impurity, and no impurity phase such as $CaCuO_2$ was observed in all of the obtained films.

Preparation of Bi2O3-PbO-SrO-CaO Coating Sol for Wiring and Superconductivity and Its properties

  • Jung, Jee-Sung;Iwasaki, Mitusnobo;Park, Won-Kyu
    • Korean Journal of Materials Research
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    • v.17 no.3
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    • pp.147-151
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    • 2007
  • Cu-free multi-component sol, of which final oxide composition becomes $Bi_{1.9}Pb{0.35}SrCaO,\;Bi_{1.8}Pb_{0.2}SrCaO\;and\;Bi_{1.5}SrCaO$, respectively, was prepared through sol-gel route and coated on a bare Cu substrate. Starting materials were metal-alkoxides as follows.; [$Bi(OC_{2}H_{5})_{3}\;Pb(O^{1}C_{3}H_{7})_{2},\;Sr(O^{i}C_{3}H_{7})_{2},\;Ca(OC_{2}H_{5})_{2}$] as a reagent grade. Transparent light yellowish sol was obtained in the case of $Bi_{1.9}Pb_{0.35}SrCaO\;and\;Bi_{1.8}Pb_{0.2}SrCaO$ composition and $Bi_{1.5}SrCaO$ composition's sol was light greenish. Each sol was repeatedly dip-coated on Cu substrate four times and pre-heated at $400^{\circ}C$ and finally heat-treated in the range of $740{\sim}900^{\circ}C$. In the results, crystalline phases confirmed by XRD were (2201) orthorhombic and monoclinic phases. However, only $Bi_{1.9}Pb_{0.35}SrCaO_{x}$ composition showed pseudo-superconductive behavior after heat-treatment at $900^{\circ}C$ for 12 seconds and then onset temperature was 77 K, even though it did not exhibit zero resistance below Tc.

Phase Stability of Bi2212 and Bi2223 Thin Films Fabricated by Ion Beam Sputtering

  • Lee, Hee-Kab;Park, Yong-Pil;Kim, Jeong-Ho
    • Proceedings of the Korean Institute of Navigation and Port Research Conference
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    • 2000.11a
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    • pp.108-111
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    • 2000
  • Bi2212 and Bi2223 thin films are fabricated by ion beam sputtering method. Three phases of Bi2201, Bi2212 and Bi2223 appear as stable ones in spite of the condition for thin film fabrication of Bi2212 and bi2223 compositions, depending on substrate temperature(T$\sub$sub/) and ozone pressure (PO$_3$). It is found out that these phases show similar T$\sub$sub/ and PO$_3$dependence, and that the stable regions of these phases are limited within very narrow temperature.

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Phase Stability Region of Bi-superconductor Thin Films Prepared by IBS Technique (이온빔 스퍼터법으로 제작한 Bi 초전도 박막의 상안정 영역)

  • Lim, Jung-Kwan;Chun, Min-Woo;Park, Yong-Pil
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2001.11b
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    • pp.308-311
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    • 2001
  • Bi-2212 and Bi-2223 thin films are prepared by IBS(ion beam sputtering) technique. Three phases of Bi-2201, Bi-2212 and Bi-2223 appear as stable ones in spite of the conditions for thin film fabrication of Bi-2212 and Bi-2223 compositions, depending on substrate temperature($T_{sub}$) and ozone pressure( $PO_3$ ). It is found out that these phases show similar $T_{sub}$ and $PO_3$ dependence, and that the stable regions of these phases are limited within very narrow temperature.

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A Study on the Formation of Single Crystal in BiSrCaCuO Thin Films (BiSrCaCuO 박막의 단결정 형성에 관한 연구)

  • Cheon, Min-Woo;Yang, Sung-Ho;Park, Yong-Pil
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2004.11b
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    • pp.39-42
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    • 2004
  • Bi-2212 and Bi-2223 thin films are prepared by IBS(ion beam sputtering) technique. Three phases of Bi-2201, Bi-2212 and Bi-2223 appear as stable ones in spite of the conditions for thin film fabrication of Bi-2212 and Bi-2223 compositions, depending on substrate temperature(Tsub) and ozone pressure(PO3). It is found out that these phases show similar Tsub and PO3 dependence, and that the stable regions of these phases are limited within very narrow temperature.

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Phase Stability Region of Bi-superconductor Thin Films Prepared by IBS Technique (이온빔 스퍼터법으로 제작한 Bi 초전도 박막의 상안정 영역)

  • 임중관;천민우;박용필
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2001.11a
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    • pp.308-311
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    • 2001
  • Bi-2212 and Bi-2223 thin films are prepared by IBS(ion beam sputtering) technique. Three phases of Bi-2201, Bi-2212 and Bi-2223 appear as stable ones in spite of the conditions for thin film fabrication of Bi-2212 and Bi-2223 compositions, depending on substrate temperature($T_{sub}$) and ozone pressure(PO$_3$). It is found out that these phases show similar $T_{sub}$ and PO$_3$ dependence, and that the stable regions of these phases are limited within very narrow temperature.

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Phase Stability of Bi2212 and Bi2223 Thin Films Fabricated by ion Beam Sputtering

  • Lee, Hee-Kab;Park, Yong-Pil;Kim, Jeong-Ho
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2000.11a
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    • pp.108-111
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    • 2000
  • Bi2212 and Bi2223 thin films are fabricated by ion beam sputtering method. Three phases of Bi2201, Bi2212 and Bi2223 appear as stable ones in spite of the condition for thin film fabrication of Bi2212 and bi2223 compositions, depending on substrate temperature(T$\sub$sub/) and ozone pressure (PO$_3$). It is found out that these phases show similar T$\sub$sub/ and PO$_3$ dependence, and that the stable regions of these phases are limited within very narrow temperature.

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Enhancement of $Bi_2Sr_2Ca_2Cu_3O_{10}$ Formation using $Bi_2Sr_2CuO_6$ and $(Ca_{0.91}Sr_{0.09})CuO_2$ Precursors ($Bi_2Sr_2CuO_6$$(Ca_{0.91}Sr_{0.09})CuO_2$를 이용한 $Bi_2Sr_2Ca_2Cu_3O_{10}$ 고온초전도체의 합성촉진)

  • Lee, Hwa-Sung;Park, Min-Soo;Ahn, Byung-Tae
    • Korean Journal of Materials Research
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    • v.6 no.7
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    • pp.684-691
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    • 1996
  • To enhance the formation of Bi,Sr,Ca,Cu,O,(Bi-2223) single phase in a shorter reaction time, the intermediate compounds such as Bi,Sr,CuO,(Bi-2201). BizSr,CaCuz08(Bi-2212) and (Ca, Sr,, ,9)CuOz in the Bi-Sr-Ca-Cu-0 system were used as the precursors. The formation of Bi-2223 was enhanced in the mixture of Bi-2201 and (Ca, ,,Sr, 119)C~eOsZpe,c ially from the mixture with (Ca, 9I Sr, ,,)CuO,-rich composition compared to Bi, iPb, 4Sr2Ca,Cu3010-cxo mposition. The formation of Bi- 2223 essentially completed within 60h at 860$^{\circ}$C and 870$^{\circ}$C. However, a small amount of the remnant Bi-2212 phase did not disappear even after a prolonged reaction at 870'C. The merit of the proposed synthetic method using the intermediate precusors can be summarized as a shorter reaction time for the formation of Bi-2223 phase, in addition to a smaller amount of second phases compared to the conventional solid-state reaction method.

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Phase Stability Region of BiSrCaCuO Superconduction Thin Films Fabricated by Ion Beam Sputtering Method (이온 빔 스퍼터법으로 제작한 BiSrCaCuO 초전도 박막의 상안정 영역)

  • Yang, Sung-Ho;Park, No-Bong;Park, Yong-Pil
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2003.05d
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    • pp.49-52
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    • 2003
  • BiSrCaCuO superconducting thin films have been fabricated by co-deposition using IBS(Ion Beam Sputtering) method. Despite setting the composition of thin film Bi2212 or Bi2223, in both cased, Bi2201, Bi2212 and Bi2223 phase were appeared. It was confirmed the obtained field of stabilizing phase was represented in the diagonal direction of the right below end in the Arrhenius plot of temperature of the substrate and $PO_3$ and it was distributed in the reeone.

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The Influence of Bi-Sticking Coefficient in Bi-2212 Thin Film

  • Lee, Hee-Kab;Park, Yong-Pil;Lee, Joon-Ung
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2000.04b
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    • pp.152-156
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    • 2000
  • Bi-thin films are fabricated by an ion beam sputtering, and sticking coefficients of the respective elements are evaluated. The sticking coefficient of Bi element exhibits a characteristic temperature dependence : almost a constant value of 0.49 below $730^{\circ}C$ and decreases linearly with temperature over $730^{\circ}C$. This temperature dependence can be elucidated from the evaporation and sublimation rates of bismuth oxide, $Bi_2O_3$, from the film surface. It is considered that the liquid phase of the bismuth oxide plays an important role in the Bi(2212) phase formation in the co-deposition process.

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