A Study on the Formation of Single Crystal in BiSrCaCuO Thin Films

BiSrCaCuO 박막의 단결정 형성에 관한 연구

  • Cheon, Min-Woo (Dept. of Electrical & Electronics Eng. Dongshin Univ.) ;
  • Yang, Sung-Ho (Dept. of Electrical & Electronics Eng. Dongshin Univ.) ;
  • Park, Yong-Pil (Dept. of Electrical & Electronics Eng. Dongshin Univ.)
  • 천민우 (동신대학교 전기전자공학과) ;
  • 양승호 (동신대학교 전기전자공학과) ;
  • 박용필 (동신대학교 전기전자공학과)
  • Published : 2004.11.19

Abstract

Bi-2212 and Bi-2223 thin films are prepared by IBS(ion beam sputtering) technique. Three phases of Bi-2201, Bi-2212 and Bi-2223 appear as stable ones in spite of the conditions for thin film fabrication of Bi-2212 and Bi-2223 compositions, depending on substrate temperature(Tsub) and ozone pressure(PO3). It is found out that these phases show similar Tsub and PO3 dependence, and that the stable regions of these phases are limited within very narrow temperature.

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