• 한국정보통신학회논문지
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• 제11권6호
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• pp.1115-1121
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• 2007

이온 빔 스퍼터법을 이용하여 저속성장으로 동시 증착에 의해 $Bi_2Sr_2Ca{_{n-1}}Cu_nO_x$(n=0,1,2) 박막을 제작하였다. Bi 2212 상은 기판온도 $750{\sim}795^{\circ}C$의 범위에서 나타났으며, $750^{\circ}C$보다 저온 측에서는 Bi 2201의 단일상이 존재하였다. 그러나, 조성과 관계되는 $PO_3$은 압력 변화에 대해서는 관찰되지 않았다. 그리고 $45{\sim}90K$의 임계온도(Tc)를 갖는 c축 배향한 고품질의 Bi 2212 박막을 얻었다. 소수의 박막에서는 소량의 CuO가 불순물로 관찰되었으며, 얻어진 모든 박막에서 $CaCuO_2$ 의 불순물 상은 관찰되지 않았다.

• 한국재료학회지
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• 제17권3호
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• pp.147-151
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• 2007

Cu-free multi-component sol, of which final oxide composition becomes $Bi_{1.9}Pb{0.35}SrCaO,\;Bi_{1.8}Pb_{0.2}SrCaO\;and\;Bi_{1.5}SrCaO$, respectively, was prepared through sol-gel route and coated on a bare Cu substrate. Starting materials were metal-alkoxides as follows.; [$Bi(OC_{2}H_{5})_{3}\;Pb(O^{1}C_{3}H_{7})_{2},\;Sr(O^{i}C_{3}H_{7})_{2},\;Ca(OC_{2}H_{5})_{2}$] as a reagent grade. Transparent light yellowish sol was obtained in the case of $Bi_{1.9}Pb_{0.35}SrCaO\;and\;Bi_{1.8}Pb_{0.2}SrCaO$ composition and $Bi_{1.5}SrCaO$ composition's sol was light greenish. Each sol was repeatedly dip-coated on Cu substrate four times and pre-heated at $400^{\circ}C$ and finally heat-treated in the range of $740{\sim}900^{\circ}C$. In the results, crystalline phases confirmed by XRD were (2201) orthorhombic and monoclinic phases. However, only $Bi_{1.9}Pb_{0.35}SrCaO_{x}$ composition showed pseudo-superconductive behavior after heat-treatment at $900^{\circ}C$ for 12 seconds and then onset temperature was 77 K, even though it did not exhibit zero resistance below Tc.

• 한국항해항만학회:학술대회논문집
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• 한국항해항만학회 2000년도 추계학술대회논문집
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• pp.108-111
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• 2000

Bi2212 and Bi2223 thin films are fabricated by ion beam sputtering method. Three phases of Bi2201, Bi2212 and Bi2223 appear as stable ones in spite of the condition for thin film fabrication of Bi2212 and bi2223 compositions, depending on substrate temperature(T$\sub$sub/) and ozone pressure (PO$_3$). It is found out that these phases show similar T$\sub$sub/ and PO$_3$dependence, and that the stable regions of these phases are limited within very narrow temperature.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집 Vol.14 No.1
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• pp.308-311
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• 2001

Bi-2212 and Bi-2223 thin films are prepared by IBS(ion beam sputtering) technique. Three phases of Bi-2201, Bi-2212 and Bi-2223 appear as stable ones in spite of the conditions for thin film fabrication of Bi-2212 and Bi-2223 compositions, depending on substrate temperature($T_{sub}$) and ozone pressure( $PO_3$ ). It is found out that these phases show similar $T_{sub}$ and $PO_3$ dependence, and that the stable regions of these phases are limited within very narrow temperature.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 추계학술대회 논문집
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• pp.39-42
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• 2004

Bi-2212 and Bi-2223 thin films are prepared by IBS(ion beam sputtering) technique. Three phases of Bi-2201, Bi-2212 and Bi-2223 appear as stable ones in spite of the conditions for thin film fabrication of Bi-2212 and Bi-2223 compositions, depending on substrate temperature(Tsub) and ozone pressure(PO3). It is found out that these phases show similar Tsub and PO3 dependence, and that the stable regions of these phases are limited within very narrow temperature.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집
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• pp.308-311
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• 2001

Bi-2212 and Bi-2223 thin films are prepared by IBS(ion beam sputtering) technique. Three phases of Bi-2201, Bi-2212 and Bi-2223 appear as stable ones in spite of the conditions for thin film fabrication of Bi-2212 and Bi-2223 compositions, depending on substrate temperature($T_{sub}$) and ozone pressure(PO$_3$). It is found out that these phases show similar $T_{sub}$ and PO$_3$ dependence, and that the stable regions of these phases are limited within very narrow temperature.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 추계학술대회 논문집
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• pp.108-111
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• 2000

Bi2212 and Bi2223 thin films are fabricated by ion beam sputtering method. Three phases of Bi2201, Bi2212 and Bi2223 appear as stable ones in spite of the condition for thin film fabrication of Bi2212 and bi2223 compositions, depending on substrate temperature(T$\sub$sub/) and ozone pressure (PO$_3$). It is found out that these phases show similar T$\sub$sub/ and PO$_3$ dependence, and that the stable regions of these phases are limited within very narrow temperature.

• 한국재료학회지
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• 제6권7호
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• pp.684-691
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• 1996

Bi-계 고온초전도체인 Bi2Sr2Ca2Cu3O10(Bi-2223)단일상을 반응시간을 줄이면서 합성하기 위하여 Bi-Sr-Ca-Cu-O계 내에 존재하는 Bi2Sr2Ca2Cu3O10(Bi-22o1), Bi2Sr2Ca2Cu3O10(Bi-2212), (Ca0.91Sr0.09)-CuO2의 혼합물, 특히 정확한 Bi1.7Pb0.4Sr2Ca2Cu3O10+x의 조성대신 (Ca0.91Sr0.09)CuO2가 많이 첨가된 조성의 혼합물에서 Bi-2223가 가장 쉽게 형성되었다. Bi-2223상은 86$0^{\circ}C$와 87$0^{\circ}C$에서 60시간 이내에 형성되었다. 소량의 Bi-2212상은 장시간의 반응후에도 여전히 존재하였다. 중간화합물을 이용한 합성방법이 통상의 소결방법에 비해 반응시간내에 소량의 불순물상들을 가진 Bi-2223상을 형성시킬 수 있다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 제5회 학술대회 논문집 일렉트렛트 및 응용기술연구회
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• pp.49-52
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• 2003

BiSrCaCuO superconducting thin films have been fabricated by co-deposition using IBS(Ion Beam Sputtering) method. Despite setting the composition of thin film Bi2212 or Bi2223, in both cased, Bi2201, Bi2212 and Bi2223 phase were appeared. It was confirmed the obtained field of stabilizing phase was represented in the diagonal direction of the right below end in the Arrhenius plot of temperature of the substrate and $PO_3$ and it was distributed in the reeone.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 춘계학술대회 논문집 전자세라믹스 센서 및 박막재료 반도체재료 일렉트렛트 및 응용기술
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• pp.152-156
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• 2000

Bi-thin films are fabricated by an ion beam sputtering, and sticking coefficients of the respective elements are evaluated. The sticking coefficient of Bi element exhibits a characteristic temperature dependence : almost a constant value of 0.49 below $730^{\circ}C$ and decreases linearly with temperature over $730^{\circ}C$. This temperature dependence can be elucidated from the evaporation and sublimation rates of bismuth oxide, $Bi_2O_3$, from the film surface. It is considered that the liquid phase of the bismuth oxide plays an important role in the Bi(2212) phase formation in the co-deposition process.