• The Transactions of The Korean Institute of Electrical Engineers
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• v.59 no.2
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• pp.352-354
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• 2010

The effects of Au addition on the structure and the superconducting properties of Bi system bulk have been investigated. Au exists in the metalic form in above materials. It does not affect the formation and structure of the BiSrCaCuO(2223) phase. The superconducting transition temperature Tc does not change for $Bi_{1.7}Pb_{0.3}Sr_2Ca_2Cu_3O$ composite However Au doping can make the grains smaller. Metallic Au can make gathers on the grains boundary and lead to the increment of critical transport current density. The current density of $Bi_{1.7}Pb_{0.3}Sr_2Ca_2Cu_3Au_{0.5}O$ was 1000A/$cm^2$ at liquid nitrogen temperature.

• Korea-Australia Rheology Journal
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• v.17 no.4
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• pp.171-180
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• 2005

We present numerical results for inertialess elliptic particle suspensions in a Newtonian fluid subject to simple shear flow, using the sliding bi-periodic frame concept of Hwang et al. (2004) such that a particulate system with a small number of particles could represent a suspension system containing a large number of particles. We report the motion and configurational change of elliptic particles in simple shear flow and discuss the inter-relationship with the bulk shear stress behaviors through several example problems of a single, two-interacting and ten particle problems in a sliding bi-periodic frame. The main objective is to check the feasibility of the direct simulation method for understanding the relationship between the microstructural evolution and the bulk material behaviors.

• Electrical & Electronic Materials
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• v.6 no.2
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• pp.175-183
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• 1993

Amorphous Semicondyctor로서 Chalcogenide계의 Ge-Se-Bi계 비정질화와 결정화 실험을 통하여 전기전도도를 평가코자 하였다. 시료의 조성범위는 G $e_{15-25}$S $e_{65-85}$B $i_{2.5-15B}$의 범위에서 5N의 Ge, Se, Bi metal분말을 사용하였다. 시료는 석영관에 진공 장입후 용융시켜 비정질화 하였다. 이때 열처리 조건은 1000.deg.C에서 10시간 동안 가열하였으며 급냉 조건은 3834.deg.C/sec로 처리하였다. 비정질 sample의 결정화는 결정핵을 형성 시킨 후 온도 변화 및 시간의 변화를 주면서 결정을 성장시켰으며 이때 B $i_{2}$S $e_{3}$와 GeS $e_{2}$ 결정상을 관찰 할 수 있었다. 박막화는 위의 실험에 사용된 Bulk sample을 사용하여 박막을 제작하였으며 유리화 영역은 Ge 15 at%, Se 70 at% 이상, Bi가 10 at% 이하일 때 비정질화가 용이하였다. Bulk의 경우 Ge를 20 at%로 고정시 Bi의 at% 함량이 증가함에 따라 전기전도도가 증가했으며 Bi가 7.5 at%이상일때 급격한 전도도의 증가를 가져왔다. 박막의 경우엔 Bulk sample보다 Bi의 함량이 증가시 더욱 큰 전도도의 증가를 가져왔다. G $e_{20}$S $e_{77.5}$B $i_{2.5}$ 저성의 결정화 경우 330.deg.C에서 4hr 유지시킨 경우가 가장 양호하였다.다.하였다.다.

• Progress in Superconductivity and Cryogenics
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• v.9 no.1
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• pp.37-42
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• 2007

We are developing a 22.9 kV/25 MVA superconducting fault current limiting(SFCL) system for a power distribution network. A Bi-2212 bulk SFCL element, which has the merits of large current capacity and high allowable electric field during fault of the power network, was selected as a candidate for our SFCL system. In this work, we experimentally investigated important characteristics of the 190 kVA Bi-2212 SFCL element in its application to the power grid e.g. DC voltage-current characteristic, AC loss, current limiting characteristic during fault, and so on. Some experimental data related to thermal and electromagnetic behaviors were also compared with the calculated ones based on numerical method. The results show that the total AC loss at rated current of the 22.9 kV/25 MVA SFCL system, consisting of one hundred thirty five 190 kVA SFCL elements, becomes likely 763 W, which is excessively large for commercialization. Numerically calculated temperature of the SFCL element in some sections is in good agreement with the measured one during fault. Local temperature distribution in the190 kVA SFCL element is greatly influenced by non-uniform critical current along the Bi-2212 bulk SFCL element, even if its non-uniformity becomes a few percentages.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1992.11a
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• pp.77-81
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• 1992

The purpose of this research was th evaluate conductivity of electricity of Ge-Se-Bi system Chalcogenide glass as a amorphous semiconductor by observing its dissolution and crystallization. In this experiment. Ge-Se-Bi metal powder in the rage of $Ge_{12-25}$, $Se_{65-85}$, $Bi_{2.5-15}$ was used as the sample ore. The ore was. put into a vaccous quartz tube and then melted. The condition of heat treatment was to dispose it to $1000^{\circ}C$ heat for 10 hours and then rapidly quenched it at $3834^{\circ}C$/see. The crystallization of the fused sample ripened as the change of temperature and time, after the crystal core was formell. At that time it was possible to observe the state that $Bi_2Se_3$ and $GeSe_2$ were crystallized. In the experiment of making memberance, the memberance was produced by using the previously experimented bulk sample. And decrystalization was well progressed when Ge was over 15 at %, Se was over 70 at %, and Bi was under 10 at%. As for bulk. when Ge was fixed to 20 at %, the conducting of electricity was increased as Bi gained at %. In the case of memberance, the conductivity was much more increased than that of bulk sample as the increase of at the increase of at % of Bi. In the experiment on $Ge_{20}$, $Se_{77.5}$ and $Bi_{2.5}$, the crystallization sswas most vigorous when they were kept at $330^{\circ}C$ for 4 hours.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.5
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• pp.368-373
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• 2010

In this study, we have investigated the effects of Cr dopant on the bulk trap levels and grain boundary characteristics of $Bi_2O_3$-based ZnO (ZB) varistor using admittance spectroscopy and dielectric functions (such as $Z^*,\;Y^*,\;M^*,\;{\varepsilon}^*$, and $tan{\delta}$). Admittance spectra show more than two bulk traps of $Zn_i$ and $V_o$ probably in different ionization states in ZnO-$Bi_2O_3-Cr_2O_3$ (ZBCr) system. Three kinds of temperature-dependant activation energies ($E_{bt}'s$) were calculated as 0.11~0.14 eV of attractive coulombic center, 0.16~0.17 eV of $Zn_{\ddot{i}}$, and 0.33 eV of $V_o^{\cdot}$ as dominant bulk defects. The grain boundaries of ZBCr could be electrochemically divided into two types as a sensitive to ambient oxygen i.e. electrically active one and an oxygen-insensitive i.e. electrically inactive one. The grain boundaries were electrically single type under 460 K (equivalent circuit as parallel $R_{gb1}C_{gb1}$) but separated as double one ($R_{gb1}C_{gb1}-R_{gb2}C_{gb2}$) over 480 K. It is revealed that the dielectric functions are very useful tool to separate the overlapped bulk defect levels and to characterize the electrical properties of grain boundaries.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.12
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• pp.969-976
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• 2011

In this study we aims to evaluate the effects of 1/3 mol% $Co_3O_4$ addition on the reaction, microstructure development, resultant electrical properties, and especially the bulk trap and grain boundary properties of $ZnO-Bi_2O_3-Sb_2O_3$ (Sb/Bi=2.0, 1.0, and 0.5) system (ZBS). The samples were prepared by conventional ceramic process, and characterized by XRD, density, SEM, I-V, impedance and modulus spectroscopy (IS & MS) measurement. In addition of $Co_3O_4$ in $ZnO-Bi_2O_3-Sb_2O_3$ (ZBSCo), the phase development, density, and microstructure were controlled by Sb/Bi ratio. Pyrochlore on cooling was reproduced in all systems. The more homogeneous microstructure was obtained in ZBSCo (Sb/Bi=1.0) system. In ZBSCo, the varistor characteristics were improved drastically (non-linear coefficient ${\alpha}$=23~50) compared to ZBS. Doping of $Co_3O_4$ to ZBS seemed to form $V^{\cdot}_o$(0.33 eV) as dominant defect. From IS & MS, especially the grain boundary of Sb/Bi=0.5 system is composed of electrically single barrier (0.93 eV) and somewhat sensitive to ambient oxygen with temperature.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.189-192
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• 2000

High-temperature superconductor of Bi-2212 system was fabricated by CFP(centrifugal forming process). To make a uniform specimen slurry was prepared in the ratio of 7:3(powder:binder) and ball milled for 24 hours. Milled slurry was charged into a rotating mold with 450 rpm and dried at room temperature. Then the specimen was performed binder burn-out at 35$0^{\circ}C$ and heated for partial melting to 86$0^{\circ}C$. XRD analysis of most specimens were shown 2212 phase and observed a local plate shaped microstructure with a well aligned c-axis direction from SEM images. T$_{c}$(Critical temperature) of Bi-2212 was 64K.K.

• Journal of the Korean Ceramic Society
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• v.52 no.1
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• pp.1-8
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• 2015

Thermoelectric (TE) technology is becoming increasingly important in applications of solid-state cooling and renewable energy sources. $Bi_2Te_3$-based TE materials are widely used in small-scale cooling and temperature control applications; however, higher levels of TE performance are required for new applications such as large-scale cooling (e.g., domestic refrigerators or air conditioners) and for highly efficient power generation system. Recently, the TE performance of $Bi_2Te_3$-based materials has been remarkably enhanced by the introduction of nanostructuring technologies which can be used to prepare TE raw materials. Because it takes into account the theoretical and experimental characteristics, nanostructuring has been shown to be one of the most promising ways to realize the simultaneous control of the electronic and thermal transport properties. In this review, emphasis is placed on bulk-type nanostructured $Bi_2Te_3$-based TE materials. Nanostructuring technologies for enhanced TE performance are summarized, and a few important strategies are presented.

• Journal of the Korean Ceramic Society
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• v.32 no.3
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• pp.359-365
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• 1995

The grain boundary effect on the ionic conductivity was investigated using a.c. admittance analysis in (Bi2O3)0.715(CaO)0.285 oxygen-ion conducting solid electrolyte. As a separated arc representing grain boundary polarization was not observed in the admittance plane, bulk conductivity was measrued for samples with various grain sizes in the temperature range from 48$0^{\circ}C$ to 72$0^{\circ}C$ and the conductivity distribution between grain interior and grain boundary was determined by the reported analytical methods. In the above temperature range, grain boundary worked as a high conductive path instead of blocking layer and ionic conduction through grain boundary was significant. The activation energy for conduction through grain and grain boundary was 78 and 106 kJ/mol, respectively.