• Journal of the Mineralogical Society of Korea
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• v.32 no.1
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• pp.1-14
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• 2019

This study used microwave-nitric acid leaching with the aim of removing penalty elements such as As and Bi. Moreover, enhanced gold content from the gold concentrate sample. The leaching conditions were changed: leaching time, nitric acid concentrations and solid-liquid ratio; In order to improve the removal of penalty elements. As a result of the experiment; sample weight loss rate, As and Bi removal rate and gold content in the solid-residues have been increased when the nitric acid concentration and leaching time were increased while the solid-liquid ratio was decreased. The leaching conditions for the maximum As and Bi removal and gold content were: leaching with a 6.0 M nitric acid solution doing 5 min. At these, the solid-residue sample weight loss was 87 %. As removal rate was 98.23 % and Bi was completely removed (100 %). Furthermore, gold content increased from 81.36 g/t to 487.32 g/t. The XRD of the solid residue showed that pyrite disappeared as the nitric acid concentration was increased, whereas sulfur peaks was increased, too.

• Journal of Magnetics
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• v.14 no.3
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• pp.120-123
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• 2009

In this study, BiFe$O_3$-BaTi$O_3$ ceramics have been fabricated by a solid-state reaction method. The effects of BaTi$O_3$ content in the (1-x)BiFe$O_3$-xBaTi$O_3$ (x = 0.1, 0.2, 0.25, 0.3, 0.4, 0.5) system on crystal structure and magnetic, dielectric, and ferroelectric properties were investigated. Perovskite BiFe$O_3$ was stabilized through the formation of a solid solution with BaTi$O_3$. Rhombohedrally distorted structure (1-x)BiFe$O_3$-xBaTi$O_3$ ceramics showed strong ferromagnetism at x = 0.5. Dielectric and ferroelectric properties of the BiFe$O_3$-BaTi$O_3$ system also changed significantly upon addition of BaTi$O_3$. It was found that the maximum dielectric and ferroelectric properties were exhibited in the (1-x)BiFe$O_3$-xBaTi$O_3$ system at x = 0.25. This suggested the morphotropic phase boundary (MPB) with the coexistence of both rhombohedral and cubic phases of the (1-x)BiFe$O_3$-xBaTi$O_3$ system at x = 0.25.

• Journal of the Korean Ceramic Society
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• v.37 no.4
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• pp.314-319
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• 2000

Microstructueral development and electrical properties in ZnO-Bi2O3-ZnAl2O4 system were investigated with ZnAl2O4 content(0.1~1.0 mol%). The shrinakge of specimens started around $700^{\circ}C$ and finished at 110$0^{\circ}C$, reaching a maximum shrinkage rate at 80$0^{\circ}C$. The shrinkage rate is strongly related to the fromation of a Bi-rich liquid. The increase of the ZnAl2O4 content inhibited the grain growth of ZnO. Most of ZnAl2O4 particles located at the grain boundaries were about 2~3${\mu}{\textrm}{m}$. ZnO grain size changed little up to 110$0^{\circ}C$, but increased markedly above 115$0^{\circ}C$, especially at lower ZnAl2O4 content. Drastic decreasing in breakdown voltage(Vb) with increasing temperature is expected to be dependent on the ZnO grain size and the distribution of the largest grains between the electrode. The nonlinear I-V characteristic was significantly influenced by the ZnAl2O4 content, which exhibited a maximum value at about 15${\mu}{\textrm}{m}$ of ZnO grain size.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.04a
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• pp.17-20
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• 2002

The effects of relatively low lead content (0.2~0.3) on the 2223 phase formation and transport property of Bi-2223/Ag tapes have been investigated. The results show that lead contents have great impact on the phase assemblage of precursors, subsequently, on the phase formation and transport property of silver sheathed BSCCO-2223 tapes. Powders containing Pb=0.25 and Pb=0.3 resulted in the nearly identical $J_c$ values in fully processed tapes, but leaded to significant difference on the phase formation process. For the case of Pb=0.2, both low conversion fraction of 2212 to 2223 and low $J_c$ value were obtained in final reacted tape, which was probably due to lack of enough liquid phase to facilitate the phase transformation.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.5
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• pp.434-439
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• 2008

Silver pastes as the outer electrodes have been prepared using Pb-free glass frits with different content of $Bi_2O_3$ and the effects of glass composition on the degradation behaviors of the Ag electrodes were investigated using the change of adhesion between Ag electrode and alumina substrate with thermal cycle stress. Low adhesion and high surface resistance were observed in Ag electrode using glass frit with a $Bi_2O_3$ content of 60 wt%, owing to the open microstructure formed at the firing temperature of $600^{\circ}C$. When the $Bi_2O_3$ was increased to 80 wt% in the glass frit, the Ag electrodes had a dense microstructure with high adhesion and a low surface resistance. Delamination of the Ag electrodes was a major failure mode under thermal cycle stress and this was attributed to residual stress due to the thermal expansion mismatch between the Ag electrode and the alumina substrate.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.11a
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• pp.363-366
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• 2000

In this study, SrBi$_2$Ta$_2$$O_{9}$ (SBT) thin films were etched at different Cl$_2$gas mixing ratio in Cl$_2$/Ar. The maximum etch rate of SBT was 883 $\AA$/min in Cl$_2$(20%)/Ar(80%). The result indicates that physical sputtering of charged particles is dominant to chemical reaction in etching SBT thin films. To evaluate the changes of morphology and crystallinity on the near surface of etched SBT, atomic force microscopy (AFM) and x-ray diffraction (XRD) were used. The rms values of etched samples in Ar only or Cl$_2$ only plasma were higher than that of as-deposited, Cl$_2$/Ar Plasma. The SBT (105) crystalinity of the etched samples decreased in Af only or Cla only plasma, but maintain constant in ClyAr plasma. This can be illustrated by a decrease of Bi content or nonvolatile etching products (Sr-Cl and Ta-Cl), resulting in the changes of stoichiometry on the etched surface of the SBT thin films. The decrease of Bi content and nonvolatile etch products were revealed by x-ray photoelectron spectroscopy (XPS) and secondary ion mass spectrometry (SIMS).).

• Journal of the Korean Chemical Society
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• v.43 no.5
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• pp.547-551
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• 1999

The phase change upon Bi substitutions in $Ca_{1.5-1.5x}Bi_xVO_4$ has been systematically studied. The x value corresponding to the maximum Bi substitutions reades to 0.14 and in this range($x{\leq}0.14$), the single phasic $Ca_3(VO_4)_2$ can be identified. However, a new phase of $BiV_{1.025}O_{4+x}$ is apparently formed along with the $Ca_3(VO_4)_2$ phase, when the x value exceeds beyond 0.18 ($x{\geq}0.18$). As a result of Bi substitution in the range of x$\leq$0.14, the interplanar space($d_300$) becomes larger as the Bi content increases. Since the composition of single phasic $Ca_{1.29}Bi_{0.14}VO_4$ (x=O.14) is, however, incongruent melting one, no definite melting point could be observed. But we found that its solidus temperature was 1182$^{\circ}C$ by DTA analysis.

• Journal of Korean Ophthalmic Optics Society
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• v.5 no.2
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• pp.167-173
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• 2000

Four glasses of $B_2O_3-Bi_2O_3-PbO-SiO_2$ (BBPS) system were prepared by melting the appropriate amounts of reagent grade oxides of $B_2O_3$, $Bi_2O_3$, PbO, and $SiO_2$ in an open crucible. The differential thermal analysis showed crystallization temperature decreased with increasing $Bi_2O_3$ or PbO content in the sample. The structures of glasses system were studied using scanning electron microscopy and Fourier transform-Infra red (FT-IR) spectroscopy. The UV cut-off and refractive index were found to be sensitive to the $Pb^{+2}$ and $Bi^{+3}$ content in the glasses. The behavior of the IR spectra of the glasses in the BP series was consistent with a role of $Bi_2O_3$ as a network former. In the BP series of glasses, the result of IR spectrum indicated that PbO behaved as a network former.

• Korean Journal of Materials Research
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• v.8 no.11
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• pp.1043-1047
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• 1998

The effect of CuO and CdO addition on the microwave dielectric properties of $BiNbO_4$, ceramics were investigated. As the content of CdO increased, sintered density and quality factor decreased. With increasing sintering temperature, both the dielectric constant and quality factor increased. In the case of specimen sintered at $960^{\circ}C$ with addition of 0.03 wt% of CuO and CdO, respectively. the microwave dielectric properties obtained were dielectric constant of 41.2, quality factor ($Q{\times}f_0$) of 6,500 (at 5.6GHz), temperature coefficient of resonant frequency of $3ppm^{\circ}C$.

• Korean Journal of Crystallography
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• v.11 no.2
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• pp.95-101
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• 2000

Ferroelectric SrBi2Ta2O9 (SBT) thin films of Pt/Ti/SiO2 electrode were fabricated using a sintered SBT target with various Bi2O3 content by rf magnetron sputtering. Good hysteresis loop characteristics were observed in the SBT thin films deposited with 50mol% excess Bi target. SBT thin films crystallized from 650℃ however, good hysteresis loop can be obtained in the film annealed above 700℃. pt/TiO2/SiO2 and Pt/SiO2 electrodes were also used to investigate the Pt electrode dependence of SBT thin films. SBT thin films showed random oriented polycrystalline structure and similar morphology regardless of electrodes with quite different surface morphology. A 0.2㎛ thick SBT film annealed at 750℃ exhibited the remanent polarization (2Pr) of μC/㎠ and coercive voltage(Vc) of 1V at an applied voltage of 5V.