• Journal of Photoscience
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• 제10권1호
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• pp.1-7
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• 2003

The results of recent work on the dye-sensitized photooxygenation of sulfides is discussed. In the case of dialkyl sulfides, the weakly bonded adduct initially formed with singlet oxygen (the persulfoxide) decays unproductively unless protonation by an acid (an alcohol or a carboxylic acid) facilitates its conversion to the sulfoxide. The effect is proportional to the strength of the acid (eg., less than 0.1 % chloroacetic acid in benzene is sufficient for maximal efficiency) and corresponds to general acid catalysis, suggesting that protonation of the persulfoxide occurs. On the other hand, with sulfides possessing an activated hydrogen in ${\alpha}$ position (eg., benzyl and allyl sulfides), hydrogen transfer becomes an efficient process in aprotic media and yields a S-hydroperoxysulfoniumm ylide, possibly arising from a conformation of the persulfoxide that is different from the one protonated in the presence of acids. Calculations on some substituted sulfides support this hypothesis. This process, which leads to C-S bond fragmentation with formation of an aldehyde, may be viewed as a general method for the preparation of aryl and heteroaryl aldehydes. In this effort, mechanistic studies offered new hints on the structure of the intermediate persulfoxide.

• 대한화학회지
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• 제31권4호
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• pp.359-363
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• 1987

초음파(50KHz)가 상온 상압하에서 $BaMnO_4$ 및 $KMnO_4-CuSO_4{\cdot}5H_2O$를 이용한 1차, 벤질, 2차 알코올의 알데히드 및 케톤 생성반응을 가속 완결시켰으며 고속교반이나 가열 환류반응보다 높은 산화율을 주었다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2015년도 제49회 하계 정기학술대회 초록집
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• pp.86.1-86.1
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• 2015

As the feature size of Si-based semiconductor shrinks to nanometer scale, we are facing to the problems such as short channel effect and leakage current. One of the solutions to cope with those issues is to bring III-V compound semiconductors to the semiconductor structures, because III-V compound semiconductors have much higher carrier mobility than Si. However, introduction of III-V semiconductors to the current Si-based manufacturing process requires great challenge in the development of process integration, since they exhibit totally different physical and chemical properties from Si. For example, epitaxial growth, surface preparation and wet etching of III-V semiconductors have to be optimized for production. In addition, oxidation mechanisms of III-V semiconductors should be elucidated and re-growth of native oxide should be controlled. In this study, surface preparation methods of various III-V compound semiconductors such as GaAs, InAs, and GaSb are introduced in terms of i) how their surfaces are modified after different chemical treatments, ii) how they will be re-oxidized after chemical treatments, and iii) is there any effect of surface orientation on the surface preparation and re-growth of oxide. Surface termination and behaviors on those semiconductors were observed by MIR-FTIR, XPS, ellipsometer, and contact angle measurements. In addition, photoresist stripping process on III-V semiconductor is also studied, because there is a chance that a conventional photoresist stripping process can attack III-V semiconductor surfaces. Based on the Hansen theory various organic solvents such as 1-methyl-2-pyrrolydone, dimethyl sulfoxide, benzyl alcohol, and propylene carbonate, were selected to remove photoresists with and without ion implantation. Although SPM and DIO3 caused etching and/or surface roughening of III-V semiconductor surface, organic solvents could remove I-line photoresist without attack of III-V semiconductor surface. The behavior of photoresist removal depends on the solvent temperature and ion implantation dose.

• 대한기계학회논문집B
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• 제38권8호
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• pp.695-700
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• 2014

본 논문에서는 수정된 증발법을 이용하여 제작된 주석(Sn) 나노입자의 녹는점 강하 특성에 대한 연구를 진행하였다. 이를 위해 대량생산이 가능한 수정된 증발법을 이용하여 10nm 급 주석 나노입자를 제조하였다. 주석 나노입자 표면의 산화 방지를 위하여 Benzyl Alcohol 을 기본유체로 사용하였으며, 제작된 주석 나노입자의 형상과 입자크기를 알아보기 위하여 투과전자현미경(TEM)을 사용하였다. 제작된 나노입자의 녹는점은 시차주사열량계(DSC)를 통해 측정하였으며, 광전자분광분석기(XPS)를 사용하여 제작된 주석 나노입자의 성분 분석을 진행 하였다. 주석 나노입자의 녹는점은 주석의 녹는점인 $232^{\circ}C$보다 44% 감소한 $129^{\circ}C$로 측정되었다. 녹는점 측정 결과는 Gibbs-Thomson 식 및 Lai 의 식과 비교하였으며, 그 결과 Lai의 식이 실험결과를 잘 예측함을 확인할 수 있었다.