• 제목/요약/키워드: Beam source

검색결과 1,019건 처리시간 0.031초

Study of ion beam shaping of an anode-type ion source coupled with a Whenelt mask

  • Huh, Yunsung;Hwang, Yunseok;Kim, Jeha
    • Applied Science and Convergence Technology
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    • 제27권4호
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    • pp.70-74
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    • 2018
  • We fabricated an anode-type ion source driven by a charge repulsion mechanism and investigated its beam shape controlled by a Whenelt mask integrated at the front face of the source. The ion beam shape was observed to vary by changing the geometry of the Whenelt mask. As the angle of inclination of the Whenelt mask was varied from $40^{\circ}$ to $60^{\circ}$, the etched area at a thin film was reduced from 20 mm to 7.5 mm at the working distance of 286 mm, and the light transmittance through the etched surface was increased from 78% to 80%, respectively. In addition, for the step height difference, ${\Delta}$ between the inner mask and the outer mask of ${\Delta}=0$, -1 mm, and +1 mm, we observed the ion beam shape was formed to be collimated, diverged, and focused, respectively. The focal length of the focused beam was 269 mm. We approved experimentally a simple way of controlling the electric field of the ion beam by changing the geometry of the Whenelt mask such that the initial direction of the ion beam in the plasma region was manipulated effectively.

Study of Driving and Thermal Stability of Anode-type Ion Beam Source by Charge Repulsion Mechanism

  • Huh, Yunsung;Hwang, Yunseok;Kim, Jeha
    • Applied Science and Convergence Technology
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    • 제27권3호
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    • pp.47-51
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    • 2018
  • We fabricated an anode-type ion beam source and studied its driving characteristics of the initial extraction of ions using two driving mechanisms: a diffusion phenomenon and a charge repulsion phenomenon. For specimen exposed to the ion beam in two methods, the surface impurity element was investigated by using X-ray photoelectron spectroscopy. Upon Ar gas injection for plasma generation the ion beam source was operated for 48 hours. We found a Fe 2p peak 5.4 at. % in the initial ions by the diffusion mechanism while no indication of Fe in the ions released in the charge repulsion mechanism. As for a long operation of 200 min, the temperature of ion beam sources was measured to increase at the rate of ${\sim}0.1^{\circ}C/min$ and kept at the initial value of $27^{\circ}C$ for driving by diffusion and charge repulsion mechanism, respectively. In this study, we confirmed that the ion beam source driven by the charge repulsion mechanism was very efficient for a long operation as proved by little electrode damage and thermal stability.

중성자 발생용 구형 집속빔 핵융합 장치의 방전현상 연구 (A Study on Discharge Phenomenon of Spherically Convergent Beam Fusion Device for Neutron Generation)

  • 박정호;주흥진;고광철
    • 한국전기전자재료학회논문지
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    • 제20권5호
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    • pp.467-470
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    • 2007
  • Application field of neutron beam is very broad including industry, medicine and science. But the research and development and use of neutron beam is restricted within in narrow limits in this country, because neutron beam facility is insufficient - a big research facility of nuclear reactor(HANARO) and some small industrial facilities which use radioisotope neutron source are available. This paper compare and investigate the results of experiment and numerical analysis of the discharge in the spherically convergent beam fusion device which were expected as a portable neutron source. The spherically convergent beam fusion device will offer stability in neutron production, possibility of movement for convenience, low construction cost and higher neutron flux than radioisotope neutron source. The star mode discharge which efficiently generate neutron, were observed at both results.

Neutral Beam Evolution in the KSTAR NBI Test Stand

  • In, S.R.;Shim, H.J.
    • Journal of Korean Vacuum Science & Technology
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    • 제7권1호
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    • pp.1-7
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    • 2003
  • The pressure distributions in the test stand built for developing KSTAR NBI ion sources were obtained using a network system composed of conductance elements modeling the ion source, the neutralizer, and other beam line components. The allowable regime was defined on the coordinates of the gas supply rate to the ion source and the neutralizer, considering the proper conditions of the three critical parameters, the ion source pressure for good arc discharge, the pressure integral in the neutralizer for sufficient neutralization, and the chamber pressure for minimum neutral beam loss. The neutral beam evolution along the path from the ion source extraction grid to the calorimeter through the neutralizer, the bending magnet and the vacuum chamber was estimated for typical pressure distributions.

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전자빔 증발원을 이용한 물질의 증발 특성 (Evaporation Characteristics of Materials from an Electron Beam Evaporation Source)

  • 정재인;양지훈;박혜선;정재훈;송민아
    • 한국표면공학회지
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    • 제44권4호
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    • pp.155-164
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    • 2011
  • Electron beam evaporation source is widely used to prepare thin films by physical vapor deposition because it is very effective to vaporize materials and there is virtually no limit to vaporize materials including metals and compounds such as oxide. In this study, evaporation characteristics of various metals and compounds from an electron beam evaporation source have been studied. The 180 degree deflection type electron beam evaporation source which has 6-hearth crucibles and is capable of inputting power up to 10 kW was employed for evaporation experiment. 36 materials including metals, oxides and fluorides have been tested and described in terms of optimum crucible liner, evaporation state, stability, and so on. Various crucible liners have been tried to find out the most effective way to vaporize materials. Two types of crucible liners have been employed in this experiment. One is contact type liner, and the other is non-contact type one. It has been tried to give the objective information and the most effective evaporation method on the evaporation of materials from the electron beam evaporation source. It is concluded that the electron beam evaporation source can be used to prepare good quality films by choosing the appropriate crucible liner.

A Novel Large Area Negative Sputter Ion Beam source and Its Application

  • Kim, Steven
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 1999년도 제17회 학술발표회 논문개요집
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    • pp.73-73
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    • 1999
  • A large area negative metal ion beam source is developed. Kinetic ion beam of the incident metal ions yields a whole nucleation and growth phenomena compared to the conventional thin film deposition processes. At the initial deposition step one can engineer the surface and interface by tuning the energy of the incident metal ion beams. Smoothness and shallow implantation can be tailored according to the desired application process. Surface chemistry and nucleation process is also controlled by the energy of the direct metal ion beams. Each individual metal ion beams with specific energy undergoes super-thermodynamic reactions and nucleation. degree of formation of tetrahedral Sp3 carbon films and beta-carbon nitride directly depends on the energy of the ion beams. Grain size and formation of polycrystalline Si, at temperatures lower than 500deg. C is obtained and controlled by the energy of the incident Si-ion beams. The large area metal ion source combines the advantages of those magnetron sputter and SKIONs prior cesium activated metal ion source. The ion beam source produces uniform amorphous diamond films over 6 diameter. The films are now investigated for applications such as field emission display emitter materials, protective coatings for computer hard disk and head, and other protective optical coatings. The performance of the ion beam source and recent applications will be presented.

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MEVVA ion Source And Filtered Thin-Film Deposition System

  • Liu, A.D.;Zhang, H.X.;Zhang, T.H.;Zhang, X.Y.;Wu, X.Y.;Zhang, S.J.;Li, Q.
    • Journal of Korean Vacuum Science & Technology
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    • 제6권2호
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    • pp.55-57
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    • 2002
  • Metal-vapor-vacuum-arc ion source is an ideal source for both high current metal ion implanter and high current plasma thin-film deposition systems. It uses the direct evaporation of metal from surface of cathode by vacuum arc to produce a very high flux of ion plasmas. The MEVVA ion source, the high-current metal-ion implanter and high-current magnetic-field-filtered plasma thin-film deposition systems developed in Beijing Normal University are introduced in this paper.

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OPTIMIZATION OF OPERATION PARAMETERS OF 80-KEV ELECTRON GUN

  • Kim, Jeong Dong;Lee, Yongdeok;Kang, Heung Sik
    • Nuclear Engineering and Technology
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    • 제46권3호
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    • pp.387-394
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    • 2014
  • A Slowing Down Time Spectrometer (SDTS) system is a highly efficient technique for isotopic nuclear material content analysis. SDTS technology has been used to analyze spent nuclear fuel and the pyro-processing of spent fuel. SDTS requires an external neutron source to induce the isotopic fissile fission. A high intensity neutron source is required to ensure a high for a good fissile fission. The electron linear accelerator system was selected to generate proper source neutrons efficiently. As a first step, the electron generator of an 80-keV electron gun was manufactured. In order to produce the high beam power from electron linear accelerator, a proper beam current is required form the electron generator. In this study, the beam current was measured by evaluating the performance of the electron generator. The beam current was determined by five parameters: high voltage at the electron gun, cathode voltage, pulse width, pulse amplitude, and bias voltage at the grid. From the experimental results under optimal conditions, the high voltage was determined to be 80 kV, the pulse width was 500 ns, and the cathode voltage was from 4.2 V to 4.6 V. The beam current was measured as 1.9 A at maximum. These results satisfy the beam current required for the operation of an electron linear accelerator.

새로운 이온화된 클라스터 빔원의 제작과 특성 조사 (Investigation of New Ionized Cluster Beam Source)

  • 고석근;장홍규;정형진;최원국
    • 한국진공학회지
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    • 제5권3호
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    • pp.251-257
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    • 1996
  • The present paper the results of development of first experimental tests of a new ionized cluster beam (ICB) source. The novelty of ICB source lies in the fact that the crucible and ionization parts are spaced in one cylincrical shell but are not divided inan electric circuit. The ICB source adapts permanent mannets to increase the ionixation efficiency. The maximum obtained Cu+ ion current density I s1.5μA/㎠ 이었으며, 증착율이 초당 0.4Å일 때 이온화율은 3% 이었으며, 증착율이 초당 0.2Å일때는 이온화율이 6%이었다. 증착율이 초당 0.2Å이고, 가속전압이 4kV에서는 Cu+ 이온빔의 균일성이 95%이상이었다.

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