• Journal of Welding and Joining
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• 제21권4호
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• pp.63-68
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• 2003

Scanning electron microscopy (SEM) has been used as a surface measurement instrument and a tool for lithography in semiconductor process due to its high density localized beam. For those purposes, however, the maximum current of SEM Is less than 100pA, which is not enough fo material processing. In this paper SEM was modified to increase the amount of current reaching a specimen from gun part where current is generated, the possibility of applying SEM to material processing, especially microjoining, was investigated. The maximum current of SEM after modifications was measured up to 10$\mu$A, which is about 10$^{5}$ times greater than before modifications. Through experiments such as eutectic solder wetting on thin 304 stainless steel foil and microjoining of 10$\mu$m thick 304 stainless steel, the intensity of electron beam of SEM proved to be great enough fur material processing as heat source. And a tight jig system was found necessary to hold materials close enough fur successful microloining.

• 대한의용생체공학회:의공학회지
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• 제24권2호
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• pp.83-89
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• 2003

기체전자증폭기는 기존의 기체검출기의 표류공간에 위치하여 표류전기장을 매우 짧은 거리에 걸쳐 전자사태가 가능한 세기(〉 $10^4$ V/cm) 이상으로 압축함으로써 기체이득을 향상시키는 개념적으로 간단한 기구이다 이 기구는 양면이 금속(구리)으로 얇게 코팅된 수십 $\mu\textrm{m}$ 두께의 절연성 foil에 화학적 에칭이나 고출력 레이저빔 천공방법을 이용하여 직경 100 $\mu\textrm{m}$ 이하의 미소 hole들을 100-200 $\mu\textrm{m}$ 간격으로 균일하게 뚫어 놓은 구조로 되어 있다. 본 연구에서는 다양한 실험조건에서 기체전자증폭기의 동작특성을 조사하였으며 또한 기체전자증폭기의 섬광특성을 이용하여 표준 CCD 카메라와 결합하여 X-선 영상을 획득함으로써 디지털 X-선 영상센서로서의 가능성을 제시하였다.

• 열처리공학회지
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• 제14권5호
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• pp.292-296
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• 2001

In this work, an ultra-high vacuum activated reactive evaporation equipment was built. With reaction of Al and oxygen plasma, $Al_2O_3$ was deposited on the surface of etched Al foil. The chamber was evacuated down to $2{\times}10^{-7}$ torr initially. The Ar and $O_2$ gas introduced into the chamber to maintain $5{\times}10^{-5}$ torr during deposition. Ar gas prevents recombining of the ionized oxygen. Evaporation was maintained by electron beam evaporator continuously. Heating filament and electrode were used in order to generate plasma. The substrate bias of -300V was introduced to accelerate deposition of evaporated Al atoms. The composition and morphology of deposited $Al_2O_3$ films were analyzed by x-ray photoelectron spectroscopy(XPS) and atomic force microscopy (AFM), respectively. The Al oxide was formed on the surface of etched Al foil. According to AFM results, the surface morphology of $Al_2O_3$ film indicates uniform feature. Dielectric characteristic was measured as a function of frequency. Measured withstanding voltage and capacitance were 52V and $24{\mu}F/cm^2$, respectively. The obtained $Al_2O_3$ film shows clean condition without contaminants, which could be adapted to capacitor production.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.265-265
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• 2013

We have investigated the influences of dangling bonds generated by alpha particle irradiation on friction and adhesion properties of graphene. Single layer of graphene grown with chemical vapor deposition on copper foil was irradiated by the alpha beam with the average energy of 3.04 MeV and the irradiation dosing between $1{\times}10^{14}$ and $1{\times}10^{15}$/$cm^3$. Raman spectroscopic showed that the ${\pi}$ electron states below Fermi level arises and the $I_D$/$I_G$ increases as increasing the dosing of alpha particle irradiation. The core level X-ray photoelectron (XPS) revealed that these defects represent the creation of various carbon-related defects and dangling bond. The nanoscale tribological properties were investigated with atomic force microscopy in ultrahigh vacuum. The friction appeared to increase remarkably as increasing the amount of dosing, indicating that the dangling bonds on graphene layers enhances the energy dissipations in friction. This trend can be explained by the additional channel of energy dissipation by dangling bond or O- and H- terminated clusters created by alpha particle irradiation.

• 핵의학기술
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• 제16권2호
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• pp.106-109
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• 2012

최근 늘어나는 [$^{18}F$]FDG-PET 검사 증대와 더불어 새로운 방사성의약품으로 [$^{11}C$]아세테이트 검사가 신설되고 다양한 연구용 $^{11}C$-표지 방사성의약품 이용이 증대되고 있다. 본 연구에서는 성공리에 수행한 한국형 사이클로트론의 $^{11}C$-표적시스템을 이용하여, $[^{11}C]CO_2$ 생산 최적화 및 임상에서 사용가능한 $^{11}C$-표지 방사성의약품 생산 적용 연구를 수행하였다.

• 한국결정성장학회지
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• 제6권2호
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• pp.194-202
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• 1996

고온가압성형된 다결정상 titanium diboride내에 형성된 전위구조를 투과전자현미경으로 분석하였다. Ion beam thinner를 사용하여 제작한 박편시편은 전위구조에 대한 특징을 드러내 보였다. 이들 특징들은 전위들로 배열된 적각결정입계, ledges나 steps들이 결정입계면에 존재하는 고각결정입계 등이다. 결정입계에서의 ledges나 steps들은 전위형성이나 결정입계 근처에서의 crack전파와 같은 결함구조로서 평가되었고, 고각결정입계는 부분적으로 결정입계전위를 포함하고 있는 것으로 관찰되었다. 또한, 시편의 미세구조에 존재하는 전위들의 Burger's vectors를 결정하였다.

• 한국레이저가공학회지
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• 제18권1호
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• pp.1-6
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• 2015

High welding speed and narrow weld seam are favorable for welding of magnesium alloy. Magnesium alloy is recommended for the smart frame because it has several advantages such as low density, high thermal conductivity, EMI shielding capability and good cast ability. This study is for the assembly welding of the magnesium smart frame with high productivity, good performance and low cost. The window for battery on AZ91D frame produced by die-casting was prepared by CNC machining. Corresponding AZ31 blank of 0.2mm thickness was prepared by die-blanking cut. All system set was fixed at the stationary bed but the laser beam was manipulated by scanner up-to 1,000mm/s speed. The weld joint between AZ31 sheet and AZ91D frame was welded by fiber laser on 850~1,000W output power. The joint showed penetration enough but some humping bead. The distortion by the weld heat was almost free because of the quick dissipation of the heat by small beam size and fast welding. Consequently, the thinner magnesium foil was assembled successfully to the magnesium frame of mobile phone.

• 한국진공학회지
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• 제15권1호
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• pp.97-102
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• 2006

양극 산화된 알루미나 (anodized aluminum oxide : AAO)는 균일하고 일정한 크기의 나노기공 패턴을 지니고 있다. AAO를 이온빔 나노 patterning을 위한 이온조사 시 마스크로서 이용하기 위해 AAO 나노 기공을 통과하는 이온빔의 투과율(AAO에 입사한 이온에 대한 투과이온의 양의 비)을 측정하였다. Al bulk foil을 양극 산화하여 두께가 $4{\mu}m$이고 종횡비(두께와 기공의 지름의 비)가 각각 200:1, 100:1 인 AAO를 Goniometer에 부착하여 500 keV의 $O^{2+}$ 이온빔에 대해 나노기공을 정렬시킨 후, 기울임 각에 따른 투과율을 측정한 결과, 종횡비가 200:1, 100:1 일 때 투과율은 각각 약 $10^{-8},\;10^{-4}$로 거의 이온빔이 투과하지 못하였다. 반면에 $SiO_2$ 위에 증착된 Al 박막으로 양극산화하여 종횡비가 5:1인 AAO의 이온빔 투과율은 0.67로 투과율이 현저히 향상되었다. 높은 종횡비를 갖는 AAO의 경우에는 범과 AAO 기공의 정렬이 쉽지 않은데다 알루미나의 비전도성으로 인한 charge-up 현상으로 인해 이온빔이 극히 투과하기 어렵기 때문이다. 실제로 80 keV의 Co 음이온을 종횡비 5:1인 AAO에 조사시킨 후에는 AAO 나노기공과 동일한 크기의 나노 구조체가 형성됨을 주사전자현미경(scanning electron microscopy: SEM) 관찰을 통하여 확인하였다.

• 한국정밀공학회지
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• 제21권4호
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• pp.32-38
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• 2004

Laser-induced thermochemical wet etching of titanium in phosphoric acid has been investigated to examine the feasibility of this method fur fabrication of microstructures. Cutting, drilling, and milling of titanium foil were carried out while examining the influence of process parameters on etch width, etch depth, and edge straightness. Laser power, scanning speed of workpiece, and etchant concentration were chosen as major process parameters influencing on temperature distribution and reaction rate. Etch width increased almost linearly with laser power showing little dependence on scanning speed while etch depth showed wide variation with both laser power and scanning speed. A well-defined etch profile with good surface quality was obtained at high concentration condition. Fabrication of a hole, micro cantilever beam, and rectangular slot with dimension of tess than 100${\mu}{\textrm}{m}$ has been demonstrated.

• Transactions on Electrical and Electronic Materials
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• 제5권4호
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• pp.143-147
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• 2004

Surface defects and bulk defects on SOI wafers are studied. Two new metrologies have been proposed to characterize surface and bulk defects in epitaxial layer transfer (ELTRAN) wafers. They included the following: i) laser scattering particle counter and coordinated atomic force microscopy (AFM) and Cu-decoration for defect isolation and ii) cross-sectional transmission electron microscope (TEM) foil preparation using focused ion beam (FIB) and TEM investigation for defect morphology observation. The size of defect is 7.29 urn by AFM analysis, the density of defect is 0.36 /cm$^2$ at as-direct surface oxide defect (DSOD), 2.52 /cm$^2$ at ox-DSOD. A hole was formed locally without either the silicon or the buried oxide layer (Square Defect) in surface defect. Most of surface defects in ELTRAN wafers originate from particle on the porous silicon.