• 한국공작기계학회논문집
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• 제17권5호
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• pp.52-57
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• 2008

Most of the electrons emitted from the filament, are captured by the anode. The portion of the electron current that leaves the gun through the hole in the anode is called the beam current. Electron beam probe is called the focused beam on the specimen. Because of the lenes and aperture, the probe current becomes smaller than the beam current. It generate various signals(backscattered electron, secondary electron) in an interaction with the specimen atoms. Backscattered electron provide an useful signal for composition and local specimen surface inclination. Secondary electron is used far the formation of surface imagination. The steady electron beam probe is very important for the imagination formation and the brightness. In this paper, we show the results of developed elements that create electron beam probe and the measured beam probe in various acceleration voltages by Faraday cup. These data are used to analysis and improve the performance of the system in the development.

• JSTS:Journal of Semiconductor Technology and Science
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• 제13권6호
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• pp.617-621
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• 2013

This study examined the effect of electron-beam (E-beam) irradiation on the electrical properties of n-GaN, AlGaN and AlGN/GaN structures on sapphire substrates. E-beam irradiation resulted in a significant decrease in the gate leakage current of the n-GaN, AlGaN and HEMT structure from $4.0{\times}10^{-4}A$, $6.5{\times}10^{-5}A$, $2.7{\times}10^{-8}A$ to $7.7{\times}10^{-5}A$, $7.7{\times}10^{-6}A$, $4.7{\times}10^{-9}A$, respectively, at a drain voltage of -10V. Furthermore, we also investigated the effect of E-beam irradiation on the AlGaN surface in AlGaN/GaN heterostructure high electron mobility transistors(HEMTs). The results showed that the maximum drain current density of the AlGaN/GaN HEMTs with E-beam irradiation was greatly improved, when compared to that of the AlGaN/GaN HEMTs without E-beam irradiation. These results strongly suggest that E-beam irradiation is a promising method to reduce leakage current of AlGaN/GaN HEMTs on sapphire through the neutralization the trap.

• 전기의세계
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• 제27권6호
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• pp.49-53
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• 1978

This paper investigates on the electric input characterisitcs of plasma electron beam in H$_{2}$ gas chamber with various pressures, effected by the shape and dimension of hollow screen cathode during electron beam is formed. The result are as follows: (1)Electron beam is formed in the region of positive resistance on the characteristic curve which shows the relation between the voltage and current of electron beam, independent of the shape and dimension of hollow screen cathode. (2)At a given electron beam current, electron beam voltage increases with the decreases of hollow screen cathode length and screen mesh number of it. (3)At a given electron beam current, electron beam voltage increases with the diameters of hollow screen cathode and electron beam hole of it.

• Nuclear Engineering and Technology
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• 제46권3호
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• pp.387-394
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• 2014

A Slowing Down Time Spectrometer (SDTS) system is a highly efficient technique for isotopic nuclear material content analysis. SDTS technology has been used to analyze spent nuclear fuel and the pyro-processing of spent fuel. SDTS requires an external neutron source to induce the isotopic fissile fission. A high intensity neutron source is required to ensure a high for a good fissile fission. The electron linear accelerator system was selected to generate proper source neutrons efficiently. As a first step, the electron generator of an 80-keV electron gun was manufactured. In order to produce the high beam power from electron linear accelerator, a proper beam current is required form the electron generator. In this study, the beam current was measured by evaluating the performance of the electron generator. The beam current was determined by five parameters: high voltage at the electron gun, cathode voltage, pulse width, pulse amplitude, and bias voltage at the grid. From the experimental results under optimal conditions, the high voltage was determined to be 80 kV, the pulse width was 500 ns, and the cathode voltage was from 4.2 V to 4.6 V. The beam current was measured as 1.9 A at maximum. These results satisfy the beam current required for the operation of an electron linear accelerator.

• Journal of Welding and Joining
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• 제15권3호
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• pp.79-87
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• 1997

This study was performed to evaluate basic characteristics of electron beam welding process for a 9% Ni steel plate. The principal welding process parameters, such as working distance, accelerating voltage, beam current and welding speed were investigated. The AB (Arata Beam) test method was also applied to characterize beam size and energy density of the electron beam welding process. The electron beam size was found to decrease with the increase of accelerating voltage and the decrease of working distance. So, in case of high voltage (150kV), spot size and energy density of electron beam were revealed to be 0.9mm and $6.5\times10^5W/\textrm{cm}^2$ respectively. The accelerating voltage among the welding parameters was found to be the most important factor governing the penetration depth. When the accelerating voltage of electron beam was low ($\leq$90kV), beam current and welding speed did not affect on the penetration depth significantly. However, in case of high voltage ($\geq$120kV), the depth of penetration increased very sensitively with the increase of beam current and the decrease of welding speed.

• 대한용접접합학회:학술대회논문집
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• 대한용접접합학회 2003년도 추계학술발표대회 개요집
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• pp.24-26
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• 2003

In this study EB(Electron Beam) welder was modified to apply EB welder to micro-joining with solder ball and Pt wire. The power and beam current of EB welder is 6kW, 100mA and the minimum current was 1mA. The minimum current of EB welder was modified to decrease the amount of beam current to 0.0lmA and the monitoring system to observe materials was made up. The control system and CAD/CAM software for e-beam direct writing was developed and the deflection beam was controlled without moving workpieces. the possibility of applying EB welder to micro-joining with solder ball and Pt wire was studied through this experiments.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1999년도 하계학술대회 논문집 E
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• pp.2170-2172
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• 1999

A low energy large aperture(LELA) pulsed electron beam generator of a cold cathode type has been developed for environmental applications, for example, waste water cleaning, flue gas cleaning, and pasteurization etc. The operational principle is based on the emission of secondary electrons from cold cathode when ions in the plasma hit the cathode, which are accelerated toward exit window by the gradient of an electric potential. We have fabricated the LELA electron beam generator with the peak energy of 200keV and beam diameter of 200mm and obtained the large aperture electron beam in air. The electron beam current density has been investigated as a function of glow discharge current, accelerating voltage and radial distribution in front of the exit window foil. The plasma density and electron temperature have been measured in order to confirm the relation with the electron beam current density. We are going to upgrade the LELA electron beam generator in the electron energy, electron beam current and stability of operation for various applications.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2008년도 춘계학술대회 논문집
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• pp.561-562
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• 2008

• 한국표면공학회지
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• 제29권5호
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• pp.556-562
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• 1996

Carbon nitride (CN) films were synthesized on silicon substrates by a combined ion-beam and laser-ablation method under various conditions; ion-beam energy and ion-beam current were varied. Raman spectroscopy and spectroscopic ellipsometry (SE) were employed to characterize respectively the structural and the optical properties of the CN films. Raman spectra show that all the CN films are amorphous independent of the ion-beam current and the ion-beam energy. Refractive indices, extinction coefficients and optical band gaps which were determined from the measured SE spectra exhibit a significant dependence on the synthesis conditions. Especially, the decrease of the refractive indices and the shrinkage of the optical band gap is noticeable as the ion-beam current and/or the ion-beam energy increase.

• 한국자기학회지
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• 제5권5호
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• pp.538-542
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• 1995

The etching characteristics of magnetic thin films of permalloy and Fe-based alloys are investigated. The thin films are fabricated by rf magnetron sputtering and the substrates used are silicon and glass. Etching is done by ion beam technique and the main process parameters investigated are beam voltage, beam current and accelerating voltage. The etch rate of the magnetic films is proportional to the beam current, but it is not directly related to the accelerating voltage and beam voltage. The dependence of etch rate on the process parameters can be explained by ion current density. It is found that the ion beam etching is effective in obtaining well-developed micro-patterns on the permalloy and Fe- based magnetic thin films.