• Korean Journal of Animal Reproduction
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• v.26 no.2
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• pp.173-182
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• 2002

The mechanisms underlying of the visual assessment and resulting in optimum embryonic development following in vitro maturation, fertilization, and culture are unclear, It was known that in vitro produced embryos show more frequent occurrence of fragmentation, which resulted in poor developmental potential and decreased implantation rate. The objective of this study was to investigate the apoptotic rates in bovine blastocyst derived from in vitro fertilization (IVF) and nuclear transfer (NT). In addition, the expression levels of Bcl-2 and Bax gene were investigated in the blastocyst to confirm their potential roles in the regulation of apoptosis during preimplantation embryonic development. Analysis of apoptosis was carried out by using terminal deoxynucleotidyl transferase mediate dUTP nick end labeling (TUNEL) method. The levels of Bcl-2 and Bax gene in the blastocyst derived from IVF and NT were determined by RT-PCR. The proportion of TUNEL positive signal in blastocyst derived from NT was significantly higher than that in blastocyst derived from IVF (p<0.001). Bcl-2 expression level of blastocyst derived from IVF was higher than that of blstocyst derived from NT. However, high expression level of Bax was observed in the blastocyst derived from NT. These results indicates that apoptosis is more responsible for fiagmentation in bovine blastocyst derived from NT than IVF. These results suggested that the increase of developmental failure followed by NT could be caused by nuclear fragmentation as apoptosis.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.67-67
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• 2009

Due to the scaling down of the dielectrics thickness, the leakage currents arising from electron tunneling through the dielectrics has become the major technical barrier. Thus, much works has focused on the development of high k dielectrics in both cases of memories and CMOS fields. Among the high-k materials, $Al_2O_3$ considered as good candidate has been attracting much attentions, which own some good properties as high dielectric constant k value (~9), a high bandgap (~2eV) and elevated crystallization temperature, etc. Due to the easy control of ion energy and flux, low ownership and simple structure of the inductively coupled plasma (ICP), we chose it for high-density plasma in our study. And the $BCl_3$ was included in the gas due to the effective extraction of oxygen in the form of BClxOy compound. In this study, the etch characteristic of ALD deposited $Al_2O_3$ thin film was investigated in $BCl_3/N_2$ plasma. The experiment were performed by comparing etch rates and selectivity of $Al_2O_3$ over $SiO_2$ as functions of the input plasma parameters such as gas mixing ratio, DC-bias voltage and RF power and process pressure. The maximum etch rate was obtained under 15 mTorr process perssure, 700 W RF power, $BCl_3$(6 sccm)/$N_2$(14 sccm) plasma, and the highest etch selectivity was 1.9. We used the x-ray photoelectron spectroscopy (XPS) to investigate the chemical reactions on the etched surface. The Auger electron spectroscopy (AES) was used for elemental analysis of etched surface.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.209-209
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• 2009

ITO 박막은 박막 태양전지, 유기 태양전지뿐만 아니라 유연한 디스플레이, 발광다이오드와 같은 광학적 장치에 투명한 전극으로써 널리 사용된다. 글라스나 플라스틱 기판위에 형성된 투명 전극은 식각을 통하여 전기회로를 구성한다. 또한 식각 특성을 개선할 필요가 있다. 이 연구에서 우리는 유리 기판위에 코팅된 ITO 박막을 유도결합 $BCl_3/Ar$ 플라즈마를 이용하여 식각하였다. ITO 박막은 RF 마그네트론 스퍼터링을 사용해 200 $^{\circ}C$에서 비알칼리 글라스 위에 증착하였고 ITO 박막의 총 두께는 약 250 nm 이었다. 또한 전기 전도성은 $4.483{\times}10^{-4}{\Omega}cm$, 캐리어 농도는 $3.923{\times}10^{20}cm^{-3}$이고, 홀 이동도는 $3.545{\times}10cm^{-2}/Vs$이었다. Ar 플라즈마에 $BCl_3$ 가스를 첨가시키면서 가스 비율에 따른 ITO의 식각 속도와 ITO와 PR과의 선택비를 측정하였다. 최대 식각 속도는 $BCl_3$(25%)/Ar(75%), 500 W의 RF power, -200 V의 DC-bias voltage, 그리고 2 pa의 공정압력일 때 588 nm/min이었고 선택비는 0.43으로 다소 낮게 측정되었다. 식각된 표면의 화학적 반응은 엑스선 광전자 분광법 (X-ray Photoelectron Spectroscopy)을 사용해 조사되었다. 그리고 식각된 표면의 거칠기는 원자현미경 (Atomic Force Microscopy)을 사용해 측정하였다.

• Exercise Science
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• v.21 no.3
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• pp.289-298
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• 2012

In the present study, we investigated the effect of treadmill exercise on apoptotic neuronal cell death in the retinas of streptozotocin-induced diabetic rats. Twenty-eight male Sprague-Dawley rats were used for this study. The animals were divided into four groups(n = 7 in each group):(1) control group, (2) exercise group, (3) diabetes-induced group, (4) diabetes-induced and exercise group. Diabetes mellitus(DM) was induced by intraperitoneal injection of streptozotocin. The rats in the exercise groups were forced to run on the treadmill for 30 minutes once a day, five times per a week, during 12 weeks. In this study, a terminal deoxynucleotidyl transferase-mediated dUTP nick end labeling(TUNEL) assay and western blot for the expressions of caspase-3, cytochrome c, Bax, and Bcl-2 in the retinas were conducted for the detection of apoptotic retinal cell death. The present results showed that the number of TUNEL-positive cells was increased in the retinas of the diabetic rats, whereas treadmill exercise suppressed this number. The expressions of pro-apoptotic factors caspase-3, cytochrome c, and Bax were enhanced and the expressions of anti-apoptotic factor Bcl-2 was decreased in the retinas of the diabetic rats. In contrast, treadmill exercise suppressed the expressions of caspase-3, cytochrome c, and Bax and increased the expression of Bcl-2. The present study demonstrated that treadmill exercise suppressed diabetes-induced apoptotic neuronal cell death in the retinas. Based on the present results, treadmill exercise may be effective therapeutic strategy for the alleviating complications of diabetes patients.

• Radiation Oncology Journal
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• v.15 no.3
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• pp.187-195
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• 1997

Purpose : To analyze the involvement of apoptosis regulatory genes p53, $p21^{wart/cip1}$ bax and bcl-2 in induction of apoptosis by radiation in murine tumors. Materials and methods : The radiation-sensitive ovarian carcinoma OCa-1, and the radiation-resistant hepatocarcinorna HCa-I were used. Tumors, 8 mm in diameter, were irradiated with 25 Gy and at various times after irradiation, ranging from 1 to 48 h, were analyzed histologically for apoptosis and by western blot for alterations in the expression of these genes. The p53 status of the tumors were determined by the polymerase chain reaction-single strand conformation polymorphism assay. Results : Both tumors were positive for wild-type p53. Radiation inducesd apoptosis in OCa-1 but not in HCa-1. Apoptosis developed rapidly, peaked at 2 h after irradiation and returned to almost the background level at 48 h In OCa-1 radiation upregulated the expression of p53, $p21^{wart/cip1}$. and the bcl-2/bax ratio was decreased. In HCa-1 radiation increased the expression of both p53 and $p21^{wart/cip1}$, although the increase of the latter was small The bcl-2/bax ratio was greatly increased. In general the observed changes occurred within a few hours after irradiation, and either preceded or coincided with development of apoptosis Conclusions : The development of apoptosis required upregulation of both p53 and $p21^{wart/cip1}$ as well as a decrease in bcl-2/bax ratio. In contrast, an increase in bcl-2/bax ratio Prevented apoptosis in the presence of upregulated p53 and $p21^{wart/cip1}$ . These findings indentified the involvement of multiple oncogenes in apoptosis regulation in vivo and demonstrate the complexity that may be associated with the use of a single oncogene assessment for Predicting the outcome of cancer therapy with cytotoxic agents.

• Transactions on Electrical and Electronic Materials
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• v.14 no.1
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• pp.32-35
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• 2013

In this paper, a manufacturing process was developed for fabricating high-quality AlGaN/GaN high electron mobility transistors (HEMTs) on silicon carbide (SiC) substrates. Various conditions and processing methods regarding the ohmic contact and pre-metal-deposition $BCl_3$ etching processes were evaluated in terms of the device performance. In order to obtain a good ohmic contact performance, we tested a Ti/Al/Ta/Au ohmic contact metallization scheme under different rapid thermal annealing (RTA) temperature and time. A $BCl_3$-based reactive-ion etching (RIE) method was performed before the ohmic metallization, since this approach was shown to produce a better ohmic contact compared to the as-fabricated HEMTs. A HEMT with a 0.5 ${\mu}m$ gate length was fabricated using this novel manufacturing process, which exhibits a maximum drain current density of 720 mA/mm and a peak transconductance of 235 mS/mm. The X-band output power density was 6.4 W/mm with a 53% power added efficiency (PAE).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.382-382
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• 2010

The etch characteristics of the $HfAlO_3$ thin films and selectivity of $HfAlO_3$ to $SiO_2$ in $Cl_2/BCl_3$/Ar plasma were investigated in this work. The maximum etch rate was 108.7 nm/min and selectivity of $HfAlO_3$ to $SiO_2$ was 1.11 at $Cl_2$(3sccm)/$BCl_3$(4sccm)/Ar(16sccm), RF power of 500 W, DC-bias voltage of - 100 V, process pressure of 1 Pa and substrate temperature of $40^{\circ}C$. As increasing RF power and DC-bias voltage, etch rates of the $HfAlO_3$ thin films increased. Whereas as decreasing of the process pressure, those of the $HfAlO_3$ thin films were increased. The chemical reaction on the surface of the etched the $HfAlO_3$ thin films was investigated with X-ray photoelectron spectroscopy (XPS).

• Food Science and Biotechnology
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• v.16 no.6
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• pp.902-909
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• 2007

Granular maize starch was treated with Thermus scotoductus 4-${\alpha}$-glucanotransferase (${\alpha}$-GTase), and its physicochemical properties were determined. The gelatinization and pasting temperatures of ${\alpha}$-GTase-modified starch were decreased by higher enzyme concentrations. ${\alpha}$-GTase treatment lowered the peak, setback, and [mal viscosity of the starch. At a higher level of enzyme treatment, the melting peak of the amylose-lipid complex was undetectable on the DSC thermogram. Also, ${\alpha}$-GTase-modified starch showed a slower retrogradation rate. The enzyme treatment changed the dynamic rheological properties of the starch, leading to decreases in its elastic (G') and viscous (G") moduli. ${\alpha}$-GTase-modified starch showed more liquid-like characteristics, whereas normal maize starch was more elastic and solid-like. Gel permeation chromatography of modified starch showed that amylose was degraded, and a low molecular-weight fraction with $M_w$ of $1.1{\times}10^5$ was produced. Branch chain-length (BCL) distribution of modified starch showed increases in BCL (DP>20), which could result from the glucans degraded from amylose molecules transferred to the branch chains of amylopectin by inter-/intra-molecular transglycosylation of ${\alpha}$-GTase. These new physicochemical functionalities of the modified starch produced by ${\alpha}$-GTase treatment are applicable to starch-based products in various industries.

• Journal of Physiology & Pathology in Korean Medicine
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• v.18 no.5
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• pp.1456-1462
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• 2004

This study was carried out to understand the effects of Bambusae Caulis in Liquamen manufactured by different production facilities on blood glucose of the mice induced with streptozotocin. Filtered Bambusae Caulis in Liquamen manufactured by two different facilitiesproduction process were used. The physiochemical properties of filtered Bambusae Caulis in Liquamen manufactured by two different facilities(300L×300W×400H and 700L×700W×800H electric furnace) were compared. Furthermore, the effects of filtered Bambusae Caulis in Liquamen were observed in terms of blood glucose, BUN and AL T in the mice induced with streptozotocin. The results were as follows : The pH value was the highest in L-BCL(E)B(pH 2.83) between manufactured by two different facilities. The L-BCL(E)B which observed low values of Hunter's color values show decreased concentration of methanol and phenolic compounds. The blood glucose contents was decreased in the experimental groups compared with the control. The amount of BUN and ALT did not show any differences between control and experimental group.

• Journal of the Korean Vacuum Society
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• v.16 no.1
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• pp.15-22
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• 2007

We present the morphological evolution at different source powers in the ion-enhanced etching of GaAs(100) in $BCl_3-Cl_2$ plasma. With little ion bombardment at floating potential, the surface develops <110< ridges and {111} facets, as it does in purely chemical etching. The morphology develops in less than 1 minute and grows bigger over time. The etched surfaces show different morphologies at different source powers with constant pressures of gases. Lowe. source power (100 W) produces poorly developed crystallographic surfaces while higher source power (900 W) produces well developed crystallographic surfaces. This is attributed to the availability of excited reactive species(chlorine atoms) depending on source powers. With more concentration of the reactive species at higher source powers, the surface of GaAs(100) would be a surface that is expected from thermodynamics while the surface morphology would be determined by sputtering in the lack of reactive species. Statistical analysis of the surfaces, based on scaling theory, revealed two spatial exponents: one(smaller than one) is formed by atomic scale mechanisms, the other(larger than one) is formed by larger scale mechanisms which is believed to develop facets.