• 한국결정성장학회지
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• 제10권4호
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• pp.337-343
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• 2000

사파이어 ($\alpha$-Al$_2$O$_3$) 단결정에 있어 prism plane slip {11$\bar{2}$0}1/3{$\bar{1}$120} 전위속도를 에치-피트 방법으로 측정하였다. 전위속도 측정시 온도범위는 $1150^{\circ}C$에서 $1400^{\circ}C$까지 였으며, 응력범위는 140 MPa에서 250 MPa까지였다. 얻어진 전위속도의 온도 및 응력 의존성에 대해 검토하였다. 전위속도의 온도의존성을 이용하여 prism plane slip 전위속도를 위한 활성화에너지를 구하였으며, 그 값은 대략 4.2$\pm$0.4 eV이었다. 또한, 전위속도의 응력의존성을 나타내는 응력지수 m은 4.5$\pm$0.8이었다. 한편, 전위속도 측정을 통해 사파이어 단결정에서 basal 면이 3-fold 대칭을 가진다는 사실을 재확인하였다.

• EDISON SW 활용 경진대회 논문집
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• 제5회(2016년)
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• pp.280-284
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• 2016

본 연구에서는 Density functional theory(DFT) 계산을 이용하여, $MoS_2$의 Mo와 S를 다른 원자로 치환 했을 때 $2H-MoS_2$ monolayer의 basal plane에서 HER활성을 향상시켰다. 특히 Ge와 Rh를 치환한 경우, ${\Delta}G_H$가 각각 0.03eV, 0,07eV로 최적에 가까운 HER활성이 나타났다. 다른 원자의 치환이 Fermi level 근처의 DOS(density of states)를 높여, ${\Delta}G_H$을 0에 가깝게 낮출 수 있음을 확인하였다. 또한 치환되는 원자의 농도, 그리고 strain을 변화시켜 농도와 strain의 증가에 따른 ${\Delta}G_H$ 감소를 발견했다. 이로써 각치환되는 원자마다, 치환 농도와 strain을 함께 변화시켜 ${\Delta}G_H$을 낮출 수 있었다. ${\Delta}G_H$가 0에 가까운(${\pm}{\pm}0.2eV$ 이내) 원자종류, 치환 농도, strain의 여러 조합을 찾았다.

• 한국세라믹학회지
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• 제36권9호
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• pp.887-892
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• 1999

The inner crack-like pore with controlled amount of Ca impurity in the high purity alumina single crystal sapphire had been created by micro-fabrication technique which includes ion implanation photo-lithography Ar ion milling and hot press technique. The crack-like pores in two-hour hot pressed specimen were extremely stable even after heat treating at 1,80$0^{\circ}C$ for 5 hours almost no healing was observed. But the crack-like pores in one-hour hot pressed specimen at 1,30$0^{\circ}C$ were healed by heat treatment and the amount of healing was increased with the heat treatment time and temperature and the amount of Ca addition. The edges of crack-like pore parallel to <1100> direction in (001) basal plane were stable but the edges normal to this direction in (00101) plane <1120> direction were unstable to facetting This means that the surface energy of alumina along the <1100> direction in (0001) basal plane in much lower than <1120> direction.

• 한국세라믹학회지
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• 제13권4호
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• pp.5-8
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• 1976

Both oriented and non-oriented ferroxplana $Co_{1-x}Zn_xZ(Ba_3Co_{2(1-x)}Zn_{2x} Fe_{24}O_{41})$ with x=0.00, 0.45 were prepared by conventional ceramic method. The magnetostrictions of thus prepared specimens were measured by use of the three terminal capacitor device at room temperature. The magnitude of measured values was approximately five times greater than that of ZnY ferroxplana. The easy-magnetization plane at room temperature of both CoZ and Co0.55 $Zn_{0.45}$Z was their basal plane. The magentostrictions in the basal plane and the other planes showed saturated values at magnetic field intensity of about 2Koe and 4Koe, respectively. The magnetostriction constants $K_1, \; K_2, \;K_3\; and\; K_4$ for CoZ were -2.4, -10.5, -5.9 and -45.2$\times10^{-6}$ , while those for $Co_{0.55}Zn_{0.45}Z$ were +0.1, -1.2, -6.3 and -39.0$\times$10^{-6}, , respectively.

• 한국재료학회지
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• 제26권11호
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• pp.656-661
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• 2016

4H- and 6H-SiC grown by physical vapor transport method were investigated by transmission electron microscopy (TEM). From the TEM diffraction patterns observed along the [11-20] zone axis, 4H- and 6H-SiC were identified due to their additional diffraction spots, indicating atomic stacking sequences. However, identification was not possible in the [10-10] zone axis due to the absence of additional diffraction spots. Basal plane dislocations (BPDs) were investigated in the TEM specimen prepared along the [10-10] zone axis using the two-beam technique. BPDs were two Shockley partial dislocations with a stacking fault (SF) between them. Shockley partial BPDs arrayed along the [0001] growth direction were observed in the investigated 4H-SiC. This arrayed configuration of Shockley partial BPDs cannot be recognized from the plan view TEM with the [0001] zone axis. The evaluated distances between the two Shockley partial dislocations for the investigated samples were similar to the equilibrium distance, with values of several hundreds of nanometers or even values as large as over a few micrometers.

• 한국결정학회지
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• 제14권2호
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• pp.93-104
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• 2003

The crystals of group-Ⅲ nitride semiconductors with wurtzite structure exhibit a strong polarity. Especially, GaN has characteristics of different growth rate, anisotropic electrical and optical properties due to the polarity. In this work, GaN epilayer was grown and the polarities of the crystals were observed by the chemical wet etching and SP-EFM. GaN thin films were deposited on c-plane A1₂O₃ substrate under the variations of growth conditions by HVPE such as the deposition temperature of the buffer layer, the deposition time, the ratio of Group-V and Ⅲ and the deposition temperature of the film. The adquate results were obtained under the conditions of 500℃, 90 seconds, 1333 and 1080℃, respectively. It is observed that the GaN layer grown without the buffer layer has N-polarity and the GaN layer grown on the buffer layer has Ga-polarity. Fine crystal single particles were grown on c-plane A1₂O₃ and SiO₂, layer. The external shape of the crystal shows ｛10-11｝｛10-10｝(000-1) planes as expected in the PBC theory and anisotropic behavior along c-axis is obvious. As a result of etching on each plane, (000-1) and ｛10-11｝planes were etched strongly due to the N-polarity and ｛10-10｝ plane was not affected due to the non-polarity. In the case of the crystal grown on c-plane A1₂O₃, two types of crystals were grown. They were hexagonal pyramidal-shape with ｛10-11｝plane and hexagonal prism with basal plane. The latter might be grown by twin plane reentrant edge (TPRE) growth.

• 대한치과교정학회지
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• 제41권4호
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• pp.224-236
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• 2011

본 연구는 정상교합자의 치열궁과 기저골 형태를 파악하기 위해 시행하였다. 정상교합자 27명(남-15명: 25Y $10M{\pm}4Y$ 4M/여-12명: 26Y $1M{\pm}7Y$ 4M)을 대상으로 두개골의 전산화 단층촬영을 시행하고 입체영상을 제작한 뒤, 상악 중절치의 FA point의 중점을 원점으로 하는 3차원 좌표계를 형성하였다. 또한 상악 교합평면과 평행한 면으로 절단하여 상하악의 치열궁과 기저골의 형태에 대해 분석하였다. 상하악기저골은 A point, B point 부위와 양측 제1대구치 부위의 좌표에서 통계적으로 유의한 차이가 나타나지 않았다. 또한 상하악의 치열궁은 기저골악궁에 비해 전치부에서 순측으로 위치하였다. 또한 치열궁과 기저골악궁의 협설측 교차는 상악은 대구치 부위에서, 하악은 소구치 부위에서 이루어졌다.

• Applied Microscopy
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• 제36권3호
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• pp.155-163
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• 2006

합성 사파이어 기판 시료-GaN반도체의 성장기판으로 사용된-의 내재하는 결함 형태를 전통적인 투과식 전자현미경 조사기법 (TEM), LACBED, HAADF-STEM 방법으로 관찰 분석하였다. 이 시료에서 주로 발견된 결함들은 두께 ${\sim}2nm$에서 32nm를 가진(0001)면 미소 쌍정(basal microtwins), 모체 결정과의 계면 주위의 변형 결함, (0001)면 전위결함(basal dislocations), 그리고 {$2\bar{1}\bar{1}3$} 피라미드 미끄럼면 중 한 면에서 일어나는 복잡한 형태의 전위 결함들이다 이들(0001)면 및 {$2\bar{1}\bar{1}3$}면에 전위 결함들은 미소 쌍정과 강하게 관련되어 일어나는 것으로 보인다. 또한 전위결함 밀도는 매우 균일하지 않으며 수 ${\mu}m$의 크기의 결함 밀집 영역에서는 그 밀도가 ${\sim}10^{10}/cm^2정도만큼 높지만 시료 전체에서의 평균은 대체적으로 ${\sim}10^5/cm^2보다 작다. 이 값은 보통 합성되는 결정에서 평균적으로 예상되는 수치이다.

• Carbon letters
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• 제26권
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• pp.81-87
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• 2018

Morphological differences in multi-layered graphene flakes or graphene nanoplatelets prepared by oxidative (rGO-NP, reduced graphene oxide-nanoplatelets) and non-oxidative (GIC-NP, graphite intercalation compound-nanoplatelets) routes were investigated with various analytical methods. Both types of NPs have similar specific surface areas but very different structural differences. Therefore, this study proposes an effective and simple method to identify structural differences in graphene-like allotropes. The adsorptive potential peaks of rGO-NP attained by the density functional theory method were found to be more scattered over the basal and non-basal regions than those of GIC-NP. Raman spectra and high resolution TEM images showed more distinctive crystallographic defects in the rGO-NP than in the GIC-NP. Because the R-ratio values of the edge and basal plane of the sample were maintained and relatively similar in the rGO-NP (0.944 for edge & 1.026 for basal), the discrepancy between those values in the GIC-NP were found to be much greater (0.918 for edge & 0.164 for basal). The electrical conductivity results showed a remarkable gap between the rGO-NP and GIC-NP attributed to their inherent morphological and crystallographic properties.

• 열처리공학회지
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• 제37권2호
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• pp.66-72
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• 2024

To investigate the effect of deformation condition on microstructure and texture formation behaviors of AZ91 magnesium alloy with three kinds of initial texure during high-temperature deformation, plane strain compression tests were carried out at high-temperature deformation conditions - temperature of 673 K~723 K, strain rate of 5 × 10^-3s^-1, up to a strain of -1.0. To clarify the texture formation behavior and crystal orientaion distribution, X-ray diffraction and EBSD measurement were conducted on mid-plane section of the specimens after electroltytic polishing. As a result of this study, it is found that the main component and the accumulation of pole density vary depending on initial texture and deformation caondition, and the formation and development basal texture components ({0001} <$10\bar{1}0$>) were observed regardless of the initial texure in all case of specimens.