• Journal of the Optical Society of Korea
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• v.12 no.4
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• pp.314-318
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• 2008

We investigate the conditions of the complete tunneling of light across a composite barrier made of multiple layers involving metamaterials. It is shown that complete tunneling phenomena are related to the resonance transmission properties of local modes formed in barrier layers and that there are two distinctive kinds of local barrier modes involved in actual complete tunneling: the degenerate inner-barrier mode and the full barrier mode. Complete tunneling occurs via two successive mode couplings: from the incident plane wave to the plane wave in the transmission layer through the direct mediation of these two kinds of local barrier modes.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.22 no.2
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• pp.65-72
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• 2012

Aluminum induced crystallization of amorphous silicon was attempted by the aluminum substrate. To avoid the layer exchange between silicon and aluminum layer, Ni layer was deposited between these two layers by sputtering. To obtain the bigger grain of the crystalline silicon, wet blasted silica layer was employed as windows between the nickel and a-Si layer. Ni obtained after the annealing treatment at $520^{\circ}C$ was found to be a promising material for the diffusion barrier between silicon and aluminum. One way to obtain bigger grain of crystalline silicon layer applicable to solar cell of higher performance was envisioned in this investigation.

• Korean Journal of Metals and Materials
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• v.48 no.10
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• pp.901-906
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• 2010

The first stage blade of a gas turbine was operated under a severe environment which included both $1300^{\circ}C$ hot gas and thermal stress. To obtain high efficiency, a thermal barrier coating (TBC) and an internal cooling system were used to increase the firing temperature. The TBC consists of multi-layer coatings of a ceramic outer layer (top coating) and a metallic inner layer (bond coat) between the ceramic and the substrate. The top and bond coating layer respectively act as a thermal barrier against hot gas and a buffer against the thermal stress caused by the difference in the thermal expansion coefficient between the ceramic and the substrate. Particularly, the bondcoating layer improves the resistance against oxidation and corrosion. An inter-diffusion layer is generated between the bond coat and the substrate due to the exposure at a high temperature and the diffusion phenomenon. A thickness measurement result showed that the bond coat of the suction side was thicker than that of the pressure side. The thickest inter-diffusion zone was noted at SS1 (Suction Side point 1). A chemical composition analysis of the bond coat showed aluminum depletion around the inter-diffusion layer. In this study, we evaluated the properties of the bond coat and the degradation of the coating layer used on a $1300^{\circ}C$-class gas turbine blade. Moreover, the operation temperature of the blade was estimated using the Arrhenius equation and this was compared with the result of a thermal analysis.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.125-125
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• 2006

We present a low temperature thermal process for the transparent dielectric layer, barrier rib, and white back dielectric layer on the soda-lime glass substrate of the PDP by the $TruNano^{TM}$ processor in combination with a compositional modification to the conventional dielectric pastes. By this method the firing temperature can be lowered by more than $100^{\circ}C$.

• Proceedings of the SCSK Conference
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• 2003.09a
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• pp.570-577
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• 2003

The importance of cornified envelope (CE)-bound lipids to epidermal barrier function is increasingly being recognized. In the present study, we intentionally damaged the cornified layer of hairless mice by ultraviolet irradiation and sodium dodecyl sulfate (SDS) treatment, and assessed the changes in epidermal barrier function by measuring Trans Epidermal Water Loss (TEWL). We also measured changes in the amount of CE-bound lipids using thin layer chromatography (TLC). The results showed that both treatments increased TEWL and decreased CE-bound lipids (omega-hydroxy cerami de and omega-hydroxy acid). In addition, investigation of the chronological changes in TEWL revealed an inverse relationship between TEWL and CE-bound lipids, and a correlation between CE-bound lipids and epidermal barrier function. We then measured the amount of CE-bound lipids in the cheek and the medial side of the upper arm in humans. The results showed that because the cheek receives external stimulation on a daily basis, the amount of CE-bound lipids was significantly lower, while the level of TEWL was higher. These observations, together with those from the animal study, indicate that CE-bound lipids are related to epidermal barrier function.

• Journal of Sensor Science and Technology
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• v.13 no.3
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• pp.195-198
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• 2004

For a diffusion barrier against copper, tantalum nitride films have been deposited on $SiO_{2}$ by atomic layer deposition (ALD), using PEMAT(Pentakis(ethylmethylamino)tantalum) and $NH_{3}$ as precursors, Ar as purging gas. The deposition rate of TaN at substrate temperature $250^{\circ}C$ was about $0.67{\AA}$ per one cycle. The stability of TaN films as a Cu diffsion barrier was tested by thermal annealing for 30 minutes in $N_{2}$ ambient and characterized through XRD, sheet resistance, and C-V measurement(Cu($1000{\AA}$)/TaN($50{\AA}$)/$SiO_{2}$($2000{\AA}$)/Si capacitor fabricated), which prove the TaN film maintains the barrier properties Cu below $400^{\circ}C$.

• Journal of the Korean Magnetics Society
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• v.12 no.3
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• pp.99-102
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• 2002

We fabricated TMR devices which have doubly oxidized tunnel barrier using plasma oxidation method to form homogeneously oxidized AlO tunnel barrier. We sputtered 10 $\AA$-bottom Al layer and oxidized it with oxidation time of 10 sec. Subsequent sputtering of 13 $\AA$-Al was performed and the metallic layer was oxidized for 50, 80, and 120 sec., respectively. The electrical resistance changed from 500 Ω to 2000 Ω with increase of oxidation time, while variation of MR ratio was little spreading 27∼31 % which is larger than that of TMR device of ordinary single tunnel barrier. We calculated effective barrier height and width by measuring I-V curves, from which we found the barrier height was 1.3∼1.8 eV sufficient for tunnel barrier, and the barrier width (<15.0 $\AA$) was smaller than physical thickness. Our results may be caused by insufficient oxidation of Al precursor into A1$_2$O$_3$. However, doubly oxidized tunnel barriers were superior to conventional single tunnel barrier in uniformity and density. Our results imply that we were able to improve MR ratio and tune resistance by employing doubly oxidized tunnel barrier process.

• JSTS:Journal of Semiconductor Technology and Science
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• v.3 no.1
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• pp.1-12
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• 2003

This paper describes a study on the abnormal behavior of the electrical characteristics of the (n)GaAs/Ti/Pt/Au Schottky contacts prepared by the two techniques of electron beam deposition and rf sputtering and after an annealing treatment. The samples were characterized by I-V and C-V measurements carried out over the temperature range of 150 - 350 K both in the as prepared state and after a 300 C, 30 min. anneal step. The variation of ideality factor with forward bias, the variation of ideality factor and barrier height with temperature and the difference between the capacitance barrier and current barrier show the presence of a thin interfacial oxide layer along with barrier height inhomogenieties at the metal/semiconductor interface. This barrier height inhomogeneity model also explains the lower barrier height for the sputtered samples to be due to the presence of low barrier height patches produced because of high plasma energy. After the annealing step the contacts prepared by electron beam have the highest typical current barrier height of 0.85 eV and capacitance barrier height of 0.86 eV whereas those prepared by sputtering (at the highest power studied) have the lowest typical current barrier height of 0.67 eV and capacitance barrier height of 0.78 eV.

• 한국정보디스플레이학회:학술대회논문집
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• 2002.08a
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• pp.639-642
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• 2002

A new PDP barrier rib formation technique was investigated utilizing transparent soft maid made of silicon resin. Transparent soft mold was fabricated by pouring a silicone resin into the base mold made with photosensitive glass. The photosensitive barrier rib paste was coated on the glass substrate and dried in a 90 $^{\circ}C$ convection oven for 20min. The transparent soft mold was pressed on top of the semi-dry barrier rib layer and then irradiated with a UV lamp to a total dose of $900{\sim}1000mJ/cm^2$ The soft maid was then removed from the pressed barrier rib by winding up and fine pattern of barrier rib was obtained. The photosensitive barrier rib paste makes the demolding easy due to reduced interfacial forces and shrinking of paste materials.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.434-436
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• 2013

Ga-doped ZnO (GZO) was substitutes of the SnO2:F films on soda lime glass substrate in the photovoltaic devices such as CIGS, CdTe and DSSC due to good properties and low cost. However, it was reported that the electrical resistivity of GZO is unstable above $300^{\circ}C$ in air atmosphere. To improve thermal stability of GZO thin films at high temperature above $300^{\circ}C$ an $TiO_2$ thin film was deposited on the top of GZO thin films as a barrier layer by Pulsed Laser Deposition (PLD) method. $TiO_2$ thin films were deposited at various thicknesses from 25 nm to 100 nm. Subsequently, these films were annealed at temperature of $300^{\circ}C$, $400^{\circ}C$, $500^{\circ}C$ in air atmosphere for 20 min. The XRD measurement results showed all the films had a preferentially oriented ( 0 0 2 ) peak, and the intensity of ( 0 0 2 ) peak nearly did not change both GZO (300 nm) single layer and $TiO_2$ (50 nm)/GZO (300 nm) double layer. The resistivity of GZO (300 nm) single layer increased from $7.6{\times}10^{-4}{\Omega}m$ (RT) to $7.7{\times}10^{-2}{\Omega}m$ ($500^{\circ}C$). However, in the case of the $TiO_2$ (50 nm)/GZO (300 nm) double layer, resistivity showed small change from $7.9{\times}10^{-4}{\Omega}m$ (RT) to $5.2{\times}10^{-3}{\Omega}m$ ($500^{\circ}C$). Meanwhile, the average transmittance of all the films exceeded 80% in the visible spectrum, which suggests that these films will be suitable for photovoltaic devices.