• Proceedings of the Korean Vacuum Society Conference
• /
• 2014.02a
• /
• pp.188.1-188.1
• /
• 2014

Aluminum is widely used as a material for electrode on silicon based devices. Especially, aluminum films are used as backside and front-side electrodes in silicon quantum dot (QD) solar cells. In this point, the diffusion of aluminum is very important for the enhancement of power conversion efficiency by improvement of contact property. Aluminum was deposited on a Si (100) wafer and a Si QD layer by ion beam sputter system with a DC ion gun. The Si QD layer was fabricated by $1100^{\circ}C$ annealing of the $SiO_2/SiO_1$ multilayer film grown by ion beam sputtering deposition. Cs ion beam with a low energy and a grazing incidence angle was used in SIMS depth profiling analysis to obtain high depth resolution. Diffusion behavior of aluminum in the Al/Si and Al/Si QD interfaces was investigated by secondary ion mass spectrometry (SIMS) as a function of heat treatment temperature. It was found that aluminum is diffused into Si substrate at $450^{\circ}C$. In this presentation, the effect of heat treatment temperature and Si nitride diffusion barrier on the diffusion of Al will be discussed.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2011.02a
• /
• pp.2-2
• /
• 2011

Single-walled carbon nanotubes (SWNTs) have been considered as a promising candidate for nextgeneration electronics due to its extraordinary electrical properties associated with one-dimensional structure. Since diversity in electronic structure depends on geometrical features, the major concern has been focused on obtaining the diameter, chirality, and density controlled SWNTs. Despite huge efforts, the controlled synthesis of SWNTs has not been achieved. There have been various approaches to synthesize controlled SWNTs by preparation of homogeneously sized catalyst because the SWNTs diameter highly depends on catalyst nanoparticles size. In this study, geometrically controlled SWNTs were synthesized using designed catalytic layers: (a) morphologically modified Al2O3 supporting layer (Fe/Al2O3/Si), (b) Mo capping layer (Mo/Fe/Al/Si), and (c) heat-driven diffusion and subsequent evaporation process of Fe catalytic nanoparticles (Al2O3/Fe/Al2O3/Si). These results clearly revealed that (a) the grain diameter and RMS roughness of Al2O3 supporting layer play a key role as a diffusion barrier for obtaining Fe nanoparticles with a uniform and small size, (b) a density and diameter of SWNTs can be simultaneously controlled by adjusting a thickness of Mo capping layer on Fe catalytic layer, and (c) SWNTs diameter was successfully controlled within a few A scale even with its fine distribution. This precise control results in bandgap manipulation of the semiconducting SWNTs, determined by direct comparison of Raman spectra and theory of extended tight binding Kataura plot. We suggest that these results provide a simple and possible way for the direct growth of diameter, density, and bandgap controlled SWNTs by precise controlling the formation of catalytic films, which will be in demand for future electronic applications.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2011.02a
• /
• pp.333-333
• /
• 2011

We studied the H/D exchange kinetics of pure and acid dopped water-ice film by using the techniques of reactive ions scattering (RIS) and low energy sputtering (LES) with low kinetic energy cesium ion beam (<35 eV). From RIS, neutral water isotopomers were detected in the form of cesium-molecule ion clusters, $CsX^+$ (X= $H_2O$, HDO, $D_2O$). Ionic species, like $H_3O^+$, $DH_2O^+$, $D_2HO^+$, $D_3O^+$, adsorbed on the surface were ejected via LES process. Those techniques allowed us to trace the isotopomeric populations of water-ice film. To show the catalytic effect of excess proton in the H/D exchange reaction, our study was conducted with two types of water-ice films. In film 1, about 0.5 BL of $H_2O$ was adsorbed on HCl (0.1 ML) dopped $D_2O$ (8 BL) film. In film 2, similar amount of $H_2O$ used in film 1 was adsorbed on pure $D_2O$ film. Kinetic data were obtained from each film type for 90-110 K (film 1) and 110-130 K (film 2) and fitted with numerically integrated lines. Through the Arrhenius plot of kinetic coefficient deduced from fitting of the H/D exchange reaction, the activation energy of film 1 and 2 were estimated to be $10{\pm}3kJmol^{-1}$ and $17{\pm}4kJmol^{-1}$. This activation barrier difference could be understood from detailed pictures of H/D exchange. In film 2, both the formation of ion pair, $H_3O^+$ and OH. and proton transfer were needed for the H/D exchange. However, in film 1, only proton transfer was necessary but ion pair formation was not, so this might reduce the activation energy.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2012.02a
• /
• pp.158-158
• /
• 2012

A new kind of organic-inorganic hybrid polymer, poly(tetraphenyl)silole siloxane (PSS), was invented and synthesized for realization of its unique charge trap properties. The organic portions consisting of (tetraphenyl)silole rings are responsible for electron trapping owing to their low-lying LUMO, while the Si-O-Si inorganic linkages of high HOMO-LUMO gap provide the intrachain energy barrier for controlling electron transport. Such an alternation of the organic and inorganic moieties in a polymer may give an interesting quantum well electronic structure in a molecule. The PSS thin film was fabricated by spin-coating of the PSS solution in THF organic solvent onto Si-wafer substrates and curing. The electron trapping of the PSS thin films was confirmed by the capacitance-voltage (C-V) measurements performed within the metal-insulator-semiconductor (MIS) device structure. And the quantum well electronic structure of the PSS thin film, which was thought to be the origin of the electron trapping, was investigated by a combination of theoretical and experimental methods: density functional theory (DFT) calculations in Gaussian03 package and spectroscopic techniques such as near edge X-ray absorption fine structure spectroscopy (NEXAFS) and photoemission spectroscopy (PES). The electron trapping properties of the PSS thin film of quantum well structure are closely related to intra- and inter-polymer chain electron transports. Among them, the intra-chain electron transport was theoretically studied using the Atomistix Toolkit (ATK) software based on the non-equilibrium Green's function (NEGF) method in conjunction with the DFT.

• Applied Chemistry for Engineering
• /
• v.18 no.5
• /
• pp.506-510
• /
• 2007

Vacuum deposited 4,4',4''-tris(N-(1-naphthyl)-N-phenylamino)-triphenylamine (1-TNATA), a widely-used semiconductor material, is placed as a thin interlayer between indium tin oxide (ITO) electrode and a hole transporting layer (HTL) in OLEDs and a well-stacked 1-TNATA layer leads to stable and high efficiency devices by reducing the carrier injection barrier at the interface between the ITO anode and hole transport layers. According to Raman spectra, thermal annealing after deposition as well as electromagnetic field treatment during deposition lead to closer stacking of 1-TNATA molecules and resulted in molecular ordering. By thermal annealing at about $110^{\circ}C$, an increase in current flow through the film by over 25% was observed. Molecularly-ordered 1-TNATA films played an important role in achieving higher luminance efficiency as well as higher power efficiency of the multi-layered organic EL devices in the present work. Electromagnetic field treatment during deposition was less effective compared to thermal annealing

• Proceedings of the Korea Crystallographic Association Conference
• /
• 2002.11a
• /
• pp.42-43
• /
• 2002

반도체 디바이스의 발전은 높은 직접화 및 동작 속도를 추구하고 있으며, 이를 위해서 MOSFET의 scale down시 발생되는 문제를 해결해야만 한다. 특히, Channel이 짧아짐으로써 발생하는 device의 열화현상으로 동작전압의 조절이 어려워 짐을 해결해야만 하며, gate oxide 두께를 줄임으로써 억제할 수 있다고 알려져 왔다. 현재, gate oxide으로 사용되고 있는 SiO2박막은 비정질로써 ～8.7 eV의 높은 band gap과 Si기판 위에서 성장이 용이하며 안정하다는 장점이 있으나, 두께가 1.6 nm 이하로 얇아질 경우 전자의 direct Tunneling에 의한 leakage current 증가와 gate impurity인 Boron의 channel로의 확산, 그리고 poly Si gate의 depletion effect[1,2] 등의 문제점으로 더 이상 사용할 수 없게 된다. 2001년 ITRS에 의하면 ASIC제품의 경우 2004년부터 0.9～l.4 nm 이하의 EOT가 요구된다고 발표하였다. 따라서, gate oxide의 물리적인 두께를 증가시켜 전자의 Tunneling을 억제하는 동시에 유전막에 걸리는 capacitance를 크게 할 수 있다는 측면에서 high-k 재료를 적용하기 위한 연구가 진행되고 있다[3]. High-k 재료로 가능성 있는 절연체들로는 A1₂O₃, Y₂O₃, CeO₂, Ta₂O, TiO₂, HfO₂, ZrO₂,STO 그리고 BST등이 있으며, 이들 재료 중 gate oxide에 적용하기 위해 크게 두 가지 측면에서 고려해야 하는데, 첫째, Si과 열역학적으로 안정하여 후속 열처리 공정에서 계면층 형성을 배제하여야 하며 둘째, 일반적으로 high-k 재료들은 유전상수에 반비례하는 band gap을 갖는 것으로 알려줘 있는데 이 Barrier Height에 지수적으로 의존하는 leakage current때문에 절연체의 band gap이 낮아서는 안 된다는 점이다. 최근 20이상의 유전상수와 ～5 eV 이상의 Band Gap을 가지며 Si기판과 열역학적으로 안정한 ZrO₂[4], HfiO₂[5]가 관심을 끌고 있다. HfO₂은 ～30의 고유전상수, ～5.7 eV의 높은 band gap, 실리콘 기판과의 열역학적 안전성 그리고 poly-Si와 호환성등의 장점으로 최근 많이 연구가 진행되고 있다. 또한, Hf은 SiO₂를 환원시켜 HfO₂가 될 수 있으며, 다른 silicide와 다르게 Hf silicide는 쉽게 산화될 수 있는 점이 보고되고 있다.

• Korean Journal of Materials Research
• /
• v.11 no.5
• /
• pp.361-366
• /
• 2001

It is difficult to obtain high Cu nucleation density and continuous Cu films in Cu-MOCVD without cleaning the TiN substrate prior to Cu deposition. In this study effects of plasma precleaning on the Cu nucleation density were investigated using SEM, XPS, AES, AFM analyses. Direct plasma pretreatment is much more effective than remote plasma pretreatment in enhancing Cu nucleation. Cleaning effects are enhanced with increasing the rf-power and the plasma exposure time in hydrogen plasma pretreatment. The mechanism through which Cu nucleation is enhanced by plasma pretreatment is as follows: Hydrogen ion\ulcorner in the hydrogen plasma react with TiN to form Ti and $NH_3$ Cu nucleation is easier on the Ti substrate than TiN substrate.

• Proceedings of the KIEE Conference
• /
• 1994.07b
• /
• pp.1320-1322
• /
• 1994

Photoisomerization characteristics of 4-octyl-4'-(5-carboxy-pentamethyleneoxy) azobenzene molecules (8A5H) were attained by measurement of absorbtion spectra. 8A5H in chroloform($6.0{\times}10^{-5}[M/l]$) shows trans to cis and cis to trans isomerization by irradiation of lights of 360[nm] and 450[nm] wavelength. From LB monolayer films of 8A5H, also the cis/trans photoisomerization was obtained and it has reversibility and memory characteristics. We are now trying to detect these properties of 8A5H electrically. On this paper, we investigated the structural changes of monolayer on the water surface by measuring the displacement current as a preliminary experiment. The measuring system was constructed at home-made Kuhn type LB(Langmuir-Blodgett) deposition apparatus. 8A5H solution was spreaded at the air-water interface and the currents induced by the dynamic behavior of molecules were measured when the molecules were pressed by barrier. The reversibility of displacement currents by compression and expansion was obtained from 8A5H molecules, which shows the compressed molecules have a tendency to disperse after the compression. From this experiment, we conclude that the behavior of molecules on water surface can be monitored electrically by using this current measuring method, and this method can also be applied to detect the photoisomerization of monolayers on water surface.

• Membrane Journal
• /
• v.15 no.4
• /
• pp.255-271
• /
• 2005

polymer/layered silicate nanocomposite (PLSNs) is new type of materials, based on clays usually rendered hydrophobic through ionic exchange of the sodium interlayer cation with an onium cation. It could be prepared via various synthetic routes comprising exfoliation adsorption, in situ intercalative polymerization and melt intercalation. The whole range of polymer is used, i.e. thermoplastics, thermosets and elastomers as a matrix. Two types of structure may be obtained, namely intercalated nanocomposites where the polymer chains are sandwiched in between silicate layers and exfolicate nanocomposites where the separated, individual silicate layers are more or less uniformly dispersed in the polymer matrix. This new family of materials exhibits enhanced properties at very low filer level, usually inferior to 5wt$\%$, such as increased mechanical properties, increase in thermal stability and gas barrier properties and good flame retardancy. Gas permeability through the PLSNs films decreased due to increased tortuosity made by intercalation or exfoliation of clay in polymer.

• Archives of design research
• /
• v.19 no.2 s.64
• /
• pp.273-282
• /
• 2006

The earlier animations aimed to express the characters realistically by making the illustrations look like moving and alive. Since then, animations have been influenced by development of media technology, men's changed mentality and evolvement of diverse social phenomena, while influencing them, too. Among them, the computer which emerged first in 1946 has sewed to more diversify the tools for realistic expressions of animations, and further, enhance the intellectual power of expression media only to expand the new visual expressions and thereby, usher in a multi-media video information environment. Moreover, this technology or computer has urged every discipline to disintegrate its conventional order for the post-modernism characterized by polysemous, diversified, obscure and sometimes, mutually contradicting elements, and as a result, animations had to find a new breakthrough in the conventional reality (cognitive and reflective reality). Thus, animations have been real enough to be perceived impromptu and emotionally, faster than the logical cognitive process beyond the simple technological barrier or the screen image processing. With such backgrounds in mind and by defining such a reality as 'sensuous reality', this study aimed to apply Gilles Deleuze's, reality of space to animation films and interpret it.