• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.74-74
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• 2009

Titanium nitride has been used as hardmask for semiconductor process, capacitor of MIM type and diffusion barrier of DRAM, due to it's low resistivity, thermodynamic stability and diffusion coefficient. Characteristics of the TiN film are high intensity and chemical stability. The TiN film also has compatibility with high-k material. This study is an experimental test for better condition of TiN film etching process. The etch rate of TiN film was investigated about etching in $BCl_3/Ar/O_2$ plasma using the inductively coupled plasma (ICP) etching system. The base condition were 4 sccm $BCl_3$ /16 sccm Ar mixed gas and 500 W the RF power, -50 V the DC bias voltage, 10 mTorr the chamber pressure and $40\;^{\circ}C$ the substrate temperature. We added $O_2$ gas to give affect etch rate because $O_2$ reacts with photoresist easily. We had changed $O_2$ gas flow rate from 2 sccm to 8 sccm, the RF power from 500 W to 800 W, the DC bias voltage from -50 V to -200 V, the chamber pressure from 5 mTorr to 20 mTorr and the substrate temperature from $20\;^{\circ}C$ to $80\;^{\circ}C$.

• 한국결정성장학회지
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• 제13권5호
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• pp.241-246
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• 2003

ATO(antimony-doped tin oxide) 투명전도막을 sol-gel dip coating 방법에 의해 $SiO_2$/glass 기판 위에 성공적으로 제조하였다 ATO막의 결정상은 $SnO_2$상임을 확인하였고, 막의 두께는 withdrawal speed를 50 mm/minute로 코팅시 약 100 nm/layer였다. $SiO_2$/glass 기판 위에 코팅한 400 nm두께의 ATO 박막을 질소분위기에서 annealing한 후, 측정한 광 투과율과 전기 저항치는 각각 84%와 $5.0\times 10^{-3}\Omega \textrm{cm}$였다. 이러한 특성은 $SiO_2$막이 Na 이온의 확산을 제어하여 $Na_2SnO_3$ 및 SnO와 같은 불순물의 형성을 억제하고, 막 내부의 Sb의 농도와 $Sb^{3+}$에 대한 $Sb^{5+}$의 비를 증가시키는데 기여했기 때문으로 확인되었다. 또한, $N_2$ annealing은 $Sb^{5+}$뿐만 아니라 $Sn^{4+}$를 환원시킴으로써 전기전도도를 향상시킴을 확인하였다.

• 센서학회지
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• 제26권2호
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• pp.96-100
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• 2017

Poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) has been extensively studied as the active material in ammonia gas sensor because of its fast response time, high conductivity and environmental stability. It is well known that a post annealing process for organic devices based on PEDOT:PSS significantly increases the device performance. In this study, we propose the solvent annealing of PEDOT:PSS and investigated its effects. As a results, post solvent annealing on PEDOT:PSS lead to the surface chemical and physical properties change. These changes result in improved conductivity of the PEDOT:PSS. In additional, ammonia sensitivity of solvent annealed PEDOT:PSS become higher than pristine polymer film. The enhancement is mainly caused by the depletion of gas barrier PSS and structural re-forming PEDOT networks. We believe that the post solvent annealing is a promising method to achieve highly sensitivity PEDOT:PSS films for applications in efficient, low-cost and flexible ammonia gas sensor.

• 한국전기전자재료학회논문지
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• 제30권3호
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• pp.192-197
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• 2017

Hydrogenated Amorphous Silicon (a-Si:H) is used as an emitter layer in HIT (heterojunction with Intrinsic Thin layer) solar cells. Its low band gap and low optical properties (low transmittance and high absorption) cause parasitic absorption on the front side of a solar cell that significantly reduces the solar cell blue response. To overcome this, research on CSC (carrier Selective Contacts) is being actively carried out to reduce carrier recombination and improve carrier transportation as a means to approach the theoretical efficiency of silicon solar cells. Among CSC materials, molybdenum oxide ($MoO_x$) is most commonly used for the hole transport layer (HTL) of a solar cell due to its high work function and wide band gap. This paper analyzes the electrical and optical properties of $MoO_x$ thin films for use in the HTL of HIT solar cells. The optical properties of $MoO_x$ show better performance than a-Si:H and ${\mu}c-SiO_x:H$.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2011년도 춘계학술발표대회
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• pp.34.2-34.2
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• 2011

The demand for Ru has been increasing in the electronic, chemical and semiconductor industry. Chemical mechanical planarization (CMP) is one of the fabrication processes for electrode formation and barrier layer removal. The abrasive particles can be easily contaminated on the top surface during the CMP process. This can induce adverse effects on subsequent patterning and film deposition processes. In this study, a post Ru CMP cleaning solution was formulated by using sodium periodate as an etchant and citric acid to modify the zeta potential of alumina particles and Ru surfaces. Ru film (150 nm thickness) was deposited on tetraethylorthosilicate (TEOS) films by the atomic layer deposition method. Ru wafers were cut into $2.0{\times}2.0$ cm pieces for the surface analysis and used for estimating PRE. A laser zeta potential analyzer (LEZA-600, Otsuka Electronics Co., Japan) was used to obtain the zeta potentials of alumina particles and the Ru surface. A contact angle analyzer (Phoenix 300, SEO, Korea) was used to measure the contact angle of the Ru surface. The adhesion force between an alumina particle and Ru wafer surface was measured by an atomic force microscope (AFM, XE-100, Park Systems, Korea). In a solution with citric acid, the zeta potential of the alumina surface was changed to a negative value due to the adsorption of negative citrate ions. However, the hydrous Ru oxide, which has positive surface charge, could be formed on Ru surface in citric acid solution at pH 6 and 8. At pH 6 and 8, relatively low particle removal efficiency was observed in citric acid solution due to the attractive force between the Ru surface and particles. At pH 10, the lowest adhesion force and highest cleaning efficiency were measured due to the repulsive force between the contaminated alumina particle and the Ru surface. The highest PRE was achieved in citric acid solution with NaIO4 below 0.01 M at pH 10.

• 한국광물학회지
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• 제29권2호
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• pp.35-45
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• 2016

점토광물은 자연에서 쉽게 얻을 수 있고, 환경친화적이며 다양한 물리화학적 특성을 갖고 있어 인류 역사상 여러 분야에 활용되어 왔다. 최근에는 몬모릴로나이트, 카올리나이트, 세피올라이트, 금속이중층수산화물과 같은 점토 화합물에 화학적 개질을 도입하여 산업분야에 활용하고자 하는 연구가 활발히 진행되고 있다. 넓은 비표면적과 높은 측면비율, 나노수준의 입자 두께, 그리고 조절가능한 표면전하를 갖는 점토화합물에 화학적 개질을 적용하면, 고분자의 기계적 성질과 기체차단성을 개선하고, 고분자 필름에 지속적 항균성을 부여하는 충전제로 사용할 수 있다. 또한, 개질된 점토화합물은 높은 흡착능과 화학적 선택성을 지니므로, 수질이나 토양을 오염시키는 화학적, 생물학적 오염원을 효과적으로 제거하는 물질로도 활용 가능하다. 본 논평에서는 이러한 점토화합물들이 미래의 주요산업군인 식품포장재 및 환경개선 분야에 활용될 가능성에 대해 최근 연구 결과를 소개하고자 한다.

• 한국농촌건축학회논문집
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• 제15권1호
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• pp.13-20
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• 2013

Bird collisions with glass are a substantial source of human-caused avian mortality. It has been estimated that between 100 million and 1 billion birds die in collisions with windows every year, and bird-window collisions can have a particularly serious impact on populations because glass is dangerous for strong, healthy, breeding adults. The purpose of this study are to address the bird-window collision issue and to provide suggestions for bird-safe development by reviewing precedent studies on bird collision and analyzing bird-friendly design guidelines. Typically reflections of the sky, clouds or trees on glass, green plants in lobbies, and lights attract and confuse both migrating and resident birds. Therefore birds fatally fly into the glass because they do not recognize that reflections are false and that glass is a barrier. Many cities such as Toronto, Chicago and New York have made efforts on reducing the bird collision by encouraging the creation of environmentally conscious and bird-safe buildings. The USGBC also introduced a bird-safety credit as part of its environmental certification process, called LEED. The results of the study presented that architects and builders can help reduce or prevent bird from collisions in both new construction and existing structures with creative use of design elements. The measures to reduce bird collisions include using glass with an embedded pattern, opaque or translucent films, decals, dot patterns, awnings, louvers, and grilles. Turning off lights after midnight during the spring and fall migrations can be part of the solution as well. In order to reduce bird mortality, the most important thing is to generate awareness of the issue among designers, builders, as well as the public. Also local governments need to develop bird-friendly design guidelines and planning mechanisms to encourage bird-safe development and building operation.

• 한국전기전자재료학회논문지
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• 제17권12호
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• pp.1356-1361
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• 2004

High temperature superconducting coated conductor has a structure of ///. The buffer layer consists of multi-layer, this study reports the deposition method and optimal deposition conditions of YSZ(Yttria-stabilized zirconia) layer which plays a important part in preventing the elements of substrate from diffusing into the superconducting layer. YSZ layer was deposited by DC reactive sputtering technique using water vapor for oxidizing deposited elements on substrate. To investigate optimal thickness of YSZ film, four YSZ/CeO$_2$/Ni samples with different YSZ thickness(130 nm, 260 nm, 390 nm, and 650 nm) were prepared. The SEM image showed that the surface of YSZ layer was getting to be rougher as YSZ layer was getting thicker and the growth mode of YSZ layer was columnar grain growth. After CeO$_2$ layer was deposited with the same thickness of 18.3 nm on each four samples, YBCO layer was deposited by PLD method with the thickness of 300 nm. The critical currents of four samples were 0, 6 A, 7.5 A, and 5 A respectively. This shows that as YSZ layer is getting thicker, YSZ layer plays a good role as a diffusion barrier but the surface of YSZ layer is getting rougher.

• 한국세라믹학회지
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• 제42권2호
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• pp.117-122
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• 2005

나노 코팅 기술로써 빠른 증착 속도와 미세구조 제어가 용이하여 항공기 엔진 부품 열차폐 코팅으로 널리 이용되는 Electron Beam Physical Vapor Deposition (EB-PVD)세라믹 코팅 기술을 연료전지 전해질 제조에 적용하였다. EB-PVD 법을 이용하여 NiO-YSZ 기판에 YSZ 전해질을 약 10$\mu$m의 두께로 짧은 시간에 코팅하였으며 증착온도에 따라 나노 구조의 표면을 가진 YSZ 막을 얻을 수 있었다. 연료전지 전해질로서의 특성을 평가하기 위하여, 같은 조건의 코팅으로 $Al_{2}O_3$기판에 전해질을 동일한 조건으로 코팅하여 전해질의 전기적 특성을 평가하였다. 또한 양극물질로서 $LaSrCoO_3$ 분말을 일반적인 스크린 프린팅 기법으로 코팅하여 EB-PVD의 코팅을 이용한 고체산화물 연료전지 제조 가능성에 대하여 논의하였다

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.320-320
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• 2014

Amorphous silicon alloy (a-Si) solar cells and modules have been receiving a great deal of attention as a low-cost alternate energy source for large-scale terrestrial applications. Key to the achievement of high-efficiency solar cells using the multi-junction approach is the development of high quality, low band-gap materials which can capture the low-energy photons of the solar spectrum. Several cell designs have been reported in the past where grading or buffer layers have been incorporated at the junction interface to reduce carrier recombination near the junction. We have investigated profiling the composition of the a-SiGe alloy throughout the bulk of the intrinsic material so as to have a built-in electrical field in a substantial portion of the intrinsic material. As a result, the band gap mismatch between a-Si:H and $a-Si_{1-x}Ge_x:H$ creates a barrier for carrier transport. Previous reports have proposed a graded band gap structure in the absorber layer not only effectively increases the short wavelength absorption near the p/i interface, but also enhances the hole transport near the i-n interface. Here, we modulated the GeH4 flow rate to control the band gap to be graded from 1.75 eV (a-Si:H) to 1.55 eV ($a-Si_{1-x}Ge_x:H$). The band structure in the absorber layer thus became like a U-shape in which the lowest band gap was located in the middle of the i-layer. Incorporation of this structure in the middle and top cell of the triple-cell configuration is expected to increase the conversion efficiency further.