• Journal of Environmental Science International
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• v.26 no.1
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• pp.1-10
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• 2017

In this study, poly(3-hydroxybutyrate-co-3-hydroxyvalerate) (PHBV)/graphene oxide (GO) nanocomposite films containing various content of GO were prepared using solution casting method. The effect of GO content on Young's modulus and dispersion of GO in PHBV matrix was investigated. Also, the thermomechanical properties, oxygen transmission rates and hydrolytic degradation of PHBV/GO nanocomposite films were studied. The addition of GO into PHBV improves the Young's modulus and decreases thermal expansion coefficient. The improvement can be mainly attributed to good dispersion of GO and interfacial interactions between PHBV and GO. Furthermore, PHBV/GO nanocomposite films show good oxygen barrier properties. PHBV/GO nanocomposites show lower hydrolytic degradation rates with increasing content of GO.

• ETRI Journal
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• v.34 no.5
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• pp.713-718
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• 2012

Sensor nodes in ubiquitous sensor networks require autonomous replacement of deteriorated gas sensors with reserved sensors, which has led us to develop an encapsulation technique to avoid poisoning the reserved sensors and an autonomous activation technique to replace a deteriorated sensor with a reserved sensor. Encapsulations of $In_2O_3$ nanoparticles with poly(ethylene-co-vinyl alcohol) (EVOH) or polyvinylidene difluoride (PVDF) as gas barrier layers are reported. The EVOH or PVDF films are used for an encapsulation of $In_2O_3$ as a sensing material and are effective in blocking $In_2O_3$ from contacting formaldehyde (HCHO) gas. The activation process of $In_2O_3$ by removing the EVOH through heating is effective. However, the thermal decomposition of the PVDF affects the property of the $In_2O_3$ in terms of the gas reactivity. The response of the sensor to HCHO gas after removing the EVOH is 26%, which is not significantly different with the response of 28% in a reference sample that was not treated at all. We believe that the selection of gas barrier materials for the encapsulation and activation of $In_2O_3$ should be considered because of the ill effect the byproduct of thermal decomposition has on the sensing materials and other thermal properties of the barrier materials.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.04a
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• pp.177-180
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• 2003

We investigated transmittance, surface characteristics, and resistivity according to bending of ITO(indium tin oxide) film with four other multi-barrier film. Transmission data of ITO film with four ITO films showed there was about large 90% transmission above 550nm wavelength at three multi-barrier structures. But, both-side hard coated structure showed relatively low 75% transmission above 550nm wavelength. And, surface images measured from SEM(scanning electron microscope) showed both-side hard coated structure have a tendency of more roughness. Also, resistivity change of four other multi-barrier film showed there was the lowest change at one-side hardcoated structure. Subsequently, with result of resistivity change according to position, we knew the resistivity change of the center increased rapidly than that of the edge.

• Journal of Sensor Science and Technology
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• v.13 no.3
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• pp.195-198
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• 2004

For a diffusion barrier against copper, tantalum nitride films have been deposited on $SiO_{2}$ by atomic layer deposition (ALD), using PEMAT(Pentakis(ethylmethylamino)tantalum) and $NH_{3}$ as precursors, Ar as purging gas. The deposition rate of TaN at substrate temperature $250^{\circ}C$ was about $0.67{\AA}$ per one cycle. The stability of TaN films as a Cu diffsion barrier was tested by thermal annealing for 30 minutes in $N_{2}$ ambient and characterized through XRD, sheet resistance, and C-V measurement(Cu($1000{\AA}$)/TaN($50{\AA}$)/$SiO_{2}$($2000{\AA}$)/Si capacitor fabricated), which prove the TaN film maintains the barrier properties Cu below $400^{\circ}C$.

• KOREAN JOURNAL OF PACKAGING SCIENCE & TECHNOLOGY
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• v.19 no.2
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• pp.95-102
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• 2013

Exfoliated graphite (EFG) with high aspect ratio was incorporated with high density polyethylene (HDPE) for use as high barrier packaging material such as water-sensitivity electric product and pharmaceutical packaging. Also HDPE/EFG nanocomposite films were prepared by adding the compatibilizer for effective dispersion and compatibility. Their chemical properties, crystal structure properties, thermal properties and water barrier properties of as-prepared HDPE/EFG nanocomposite films were investigated as a function of EFG contents. It showed that there is a weak interfacial interaction between HDPE and EFG, however, the water vapor permeations were decreased from 127 to 78 (70 ${\mu}m{\cdot}g/m^2$, $day{\cdot}atm$) by addition of EFG. Especially, the physical properties of HDPE/EFG nanocomposite films were effectively increased up to 0.5 wt%, however, there were no significant improvement of properties in nanocomposite films at the additional EFG loading. To maximize their performance of the nanocomposite films, further research is required to enhance the dispersion of EFG and compatibility of EFG in HDPE matrix.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.552-552
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• 2013

In our study we consider Al2O3 ceramic substrates for Plasma Surface Treatments in order to improve deposited diamond surface and increase diamond deposition rate by applying DBD (Dielectric Barrier Dischrge) system. Because Plasma Surface Treatments was used as a modification method of material surface properties like surface free energy, wettability, and adhesion. By applying Plasma Surface Treatments diamond films are deposited on the Al2O3 ceramic substrates. DC Arc Plasmatron with mathane and hydrogen gases is used. Deposited diamond films are investigated by SEM (Scanning Electron Microscopy), AFM (Atomic Force Microscopy) and XRD (X-ray Diffractometer). Then the C-H stretching of synthetic diamond films by FTIR (Fourier Transform Infrared Spectroscopy) is studied. As a result, nanocrystalline diamond films were identified by using SEM and diamond properties in XRD peaks at (111, $43.8{\Box}$, (220, $75.3{\Box}$ and (311, $90.4{\Box}$ were shown. Absorption peaks in FTIR spectrum, caused by CHx sp3 bond stretching of CVD diamond films, were identified as well. Finally, we improved such parameters as depostion rate ($2.3{\mu}m$/h), diamond surface uniformity, and impurities level by applying Plasma Surface Treatments. These experimental results show the importance of Plasma Surface Treatments for diamond deposition by a plasma source.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.295-295
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• 2016

Recently, TCO films with low carrier concentration, high mobility and high work function are proposed beneficial as front electrode in HIT solar cell due to free-carrier absorption in NIR wavelength region and low Schottky barrier height in the front TCO/a-Si:H(p) interface. We report high transmittance and work function zirconium-doped indium tin oxide (ITO:Zr) films with various plasma (Ar/O2 and Ar) conditions. The role of (Ar/O2) plasma was to enhance the work function of the ITO:Zr films whereas the pure Ar plasma based ITO:Zr showed good electrical properties. The RF magnetron sputtered ITO:Zr films with low resistivity and high transmittance were employed as front electrode in HIT solar cells, yield the best performance of 18.15% with an open-circuit voltage of 710 eV and current density of 34.63 mA/cm2. The high work function ITO:Zr films can be used to modify the front barrier height of HIT solar cell.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.349-352
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• 1999

We have investigated the electrical characteristics of arachidic acid($C_{20}$), stearic acid(C_{18} and palmitic acid($C_{16}$) Langmuir-Blodgett(LB) films because the fatty acid systems have a same hydrophilic group and a different hydrophobic one (alkyl chain length). In this work, fatty acid systems were used as LB films and the status of the deposited films were confirmed by evaluating the capacitance and I-V characteristics. The conductivity of $C_{20}$, C_{18} and $C_{16}$ LB films obtained from I-V characteristics were about 5x $10^{15}$, 3x $10^{14}$ and 9x $10^{14}$[S/cm], espectively. These results have shown the insulating materials and could control the conductivity by changing the length of alkyl chain. Also, we have confirmed that the barrier height of fatty acid systems were about 1.32- 1.40[eV] and the relative dielectric constant were about 2.9~4.2. These values were almost the same ones obtained from dielectric characteristics.

• Applied Chemistry for Engineering
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• v.26 no.1
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• pp.23-28
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• 2015

Lacquer sap extracted from lacquer trees exhibits good thermal stabilities and antimicrobial properties. To apply these superior properties to functional packaging, polyurushiol (YPUOH) powders were prepared and blended into LDPE (low density polyethylene) to prepare three different LDPE/YPUOH composite films via a twin screw extruder system. Their morphology, thermal and antimicrobial properties as well as barrier properties of the LDPE/YPUOH composite films were thoroughly investigated to find out applicablities of the films as functional packaging materials. Although the interfacial interaction between LDPE and YPUOH was relatively weak, LDPE/YPUOH composite films exhibited good dispersion of YPUOH in LDPE, resulting in the enhanced thermal stability with YPUOH loading. Due to the good antibacterial property of as-prepared YPUOH, LDPE/YUOH composite films also showed an excellent antibacterial activity (R) of 99.9% against E. coli. Furthermore, the moisture barrier property of LDPE/YPUOH composite films increased with increasing YPUOH contents. Incorporating the relatively low amount of YPUOH in LDPE resulted in the apparent enhancement in thermal stabilities, antibacterial and moisture barrier properties, which made them promising candidates as a functional filler for packaging materials.

• Proceedings of the KIEE Conference
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• 2009.07a
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• pp.1256_1257
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• 2009

We have grown, for the first time to our knowledge, N-doped ZnO thin films on sapphire substrate by employing novel dielectric barrier discharge in pulsed laser deposition (DBD-PLD). DBD guarantees an effective way for massive in-situ generation of N-plasma under the conventional PLD process condition. Low-temperature photoluminescence spectra of the N-doped ZnO film provided near band-edge emission after thermal annealing process. The emission peak was resolved by Gaussian fitting to find a dominant acceptor-bound exciton peak ($A^0X$) that indicates the successful p-type doping of ZnO with N.