• 제목/요약/키워드: Barrier film

검색결과 652건 처리시간 0.043초

베리어 필름이 양자점 필름의 광특성에 미치는 영향 (Effects of barrier film on optical properties of quantum dot film)

  • 이정일;김영주;류정호
    • 한국결정성장학회지
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    • 제30권2호
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    • pp.78-81
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    • 2020
  • 양자점은 산소와 수분에 취약하기 때문에 수분과 산소를 막아줄 수 있는 베리어 특성을 가진 제품을 이용하여 샌드위치 형식 양자점 층을 감싸는 형태로 제조하여 양자점의 광학적 신회성을 평가하였다. 다른 보호막이 없는 양자점 레진으로만 이루어진 필름, 양자점 필름과 PET를 합지한 필름 및 베리어 필름을 합지한 양자점 필름, 3가지를 이용하여 온도 60℃, 습도 90 %인 고온고습 조건에서 650시간 동안 변화를 평가를 진행하였다. 베리어 필름과 합지한 양자점 필름 제품은 휘도와 CIE x 및 CIE y 값이 유지되는 반면 PET와 합지한 양자점 필름 제품은 휘도 8 %, CIE x 2 % 및 CIE y 8 %가 낮아졌다. 또한 수분과 산소에 그대로 노출되었던 양자점 필름 제품은 측정 전부터 산화되어 낮게 측정되었으며 최종적으로 휘도 12 %, CIE x 9 % 및 CIE y 14 %가 낮게 측정되었다.

열전 박막 $Bi_{0.5}Sb_{1.5}Te_3/Bi_2Te_{2.4}Se_{0.6} p/n$ 접합에서의 확산 장벽에 관한 연구 (A Study on the Diffusion Barrier at the p/n Junctions of $Bi_{0.5}Sb_{1.5}Te_3/Bi_2Te_{2.4}Se_{0.6} p/n$ Thermoelectric Thin Films)

  • 김일호;이동희
    • 한국재료학회지
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    • 제6권7호
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    • pp.678-683
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    • 1996
  • In the fabrication processes of thin film thermoelectrics, a subsequent annealing treatment is inevitable to reduce the defects and residual stresses introduced during the film growth, and to make the uniform carrier concentration of the film. However, the diffusion-induced atomic redistribution and the broadening of p/n junction region are expected to affect the thermoelectric properties of thin film modules. The present study intends to investigate the diffusion at the p/n junctions of thermoelectric thin films and to relate it to the property changes. The film junctions of p-type(Bi0.5Sb1.5Te3)and n-type(Bi2Te2.4Se0.6)were prepared by the flash evaporation method. Aluminum thin layer was employed as a diffusion barrier between p-and n-type films of the junction. This was found to be an effective barrier by showing a negligible diffusion into both type films. After annealing treatment, the thermoelectric properties of p/n couples with aluminum barrier layer were accordingly retained their properties without any deterioration.

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Relationship between Moisture Barrier Properties and Sorption Characteristics of Edible Composite Films

  • Ryu, Sou-Youn;Rhim, Jong-Whan;Lee, Won-Jong;Yoon, Jung-Ro;Kim, Suk-Shin
    • Food Science and Biotechnology
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    • 제14권1호
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    • pp.68-72
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    • 2005
  • Moisture sorption characteristics of edible composite films were determined and compared against moisture barrier properties. Edible composite films were Z1 (zein film with polyethylene glycol(PEG) and glycerol), Z2 (zein film with oleic acid), ZA1 (zein-coated high amylose corn starch film with PEG and glycerol), and ZA2 (zein-coated high amylose corn starch film with oleic acid). Z2 film showed the lowest equilibrium moisture content (EMC), monolayer value ($W_m$), water vapor permeability (WVP), and water solubility (WS). Surface structure of Z2 was relatively denser and finer than that of other edible films. GAB $W_m$ and C values decreased, while K values increased with increasing temperature. Correlation coefficients of WS:EMC and WVP:EMC at Aw 0.75 were higher than those of WS: $W_m$ and WVP: $W_m$, respectively. EMC values at Aw 0.75 appeared useful for evaluating or predicting moisture barrier properties of edible films.

고온에서 알루미나 박막의 인장특성 (Tensile characteristics of Alumina Thin Film at High Temperature)

  • 선신규;강기주
    • 한국정밀공학회:학술대회논문집
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    • 한국정밀공학회 2004년도 추계학술대회 논문집
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    • pp.1344-1347
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    • 2004
  • Recently, Study on measuring property of a micro thin film(nm ~ hundreds of ) under Thermal Mechanical loading. In this work, We perform tensile test at high temperature(1200 ) to investigate mechanical properties of alumina TGO formed under Thermal Barrier Coating. We used Digital Image Correlation method for measuring displacement, and We presented a method of tensile test for thin film at high temperature.

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대기압 유전체배리어방전으로 합성 및 산화 처리된 SiOxCy(-H) 박막의 부식방지 특성 (Anti-corrosion Properties of SiOxCy(-H) thin Films Synthesized and Oxidized by Atmospheric Pressure Dielectric Barrier Discharge)

  • 김기택;김윤기
    • 한국표면공학회지
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    • 제53권5호
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    • pp.201-206
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    • 2020
  • A SiOxCy(-H) thin film was synthesized by atmospheric pressure dielectric barrier discharge(APDBD), and a SiO2-like layer was formed on the surface of the film by oxidation treatment using oxygen plasma. Hexamethylcyclotrisiloxane was used as a precursor for the SiOxCy(-H) synthesis, and He gas was used for stabilizing APDBD. Oxygen permeability was evaluated by forming an oxidized SiOxCy(-H) thin film on a PET film. When the single-layer oxidized SiOxCy(-H) film was coated on the PET, the oxygen gas permeability decreased by 46% compared with bare PET. In case of three-layer oxidized SiOxCy(-H) film, the oxygen gas permeability decreased by 73%. The oxygen permeability was affected by the thickness of the SiO2-like layer formed by oxidation treatment rather than the thickness of the SiOxCy(-H) film. The excellent corrosion resistance was demonstrated by coating an oxidized SiOxCy(-H) thin film on the silver-coated aluminum PCB for light emitting diode (LED).

Magnetic Effects of La0.67Sr0.33MnO3 on W-C-N Diffusion Barrier Thin Films

  • Song, Moon-Kyoo;So, Ji-Seop;Shim, In-Bo;Lee, Chang-Woo
    • 한국자기학회지
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    • 제15권2호
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    • pp.133-136
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    • 2005
  • In the case of contacts between semiconductor and metal in semiconductor devices, they tend to be unstable because of thermal budget. To prevent these problems we deposited W-C-N diffusion barrier for preventing the interdiffusion between metal and semiconductor. The thickness of the barrier is $1,000{\AA}$ and the pressure is 3 mTorr during the deposition. In this work we coated LSMO (CMR material) on W-C-N diffusion barrier and then we studied the interface effects between LSMO layer and W-C-N diffusion barrier. We got results that the magnetic characteristics of LSMO thin film are still maintained after annealing at $800^{\circ}C$ for 3 hr because W-C-N thin diffusion barrier was prevented the diffusion of oxygen between LSMO and Si substrate.

Silicon Carbide Barrier Technology to Enable Flexible OLED Displays

  • Kim, Sang-Jin;Zambov, Ludmil;Weidner, Ken;Shamamian, Vasgen;Cerny, Glenn
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2007년도 7th International Meeting on Information Display 제7권1호
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    • pp.452-455
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    • 2007
  • This paper provides an overview on the characteristics of a-SiC:H barrier film deposited for flexible display applications. Key characteristics such as high crack resistance, high thermal/hydro stability, excellent adhesion to the polymer substrate, as well as very low permeance has been demonstrated. The excellence of this barrier film has been shown from competitive analysis compared with other barrier coating materials. Finally, flexible Polymer Light Emitting Diode (PLED) test pixels have been fabricated on the barrier coated plastic substrate, demonstrating the viability of the device with lifetime data.

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플라스마 중합을 이용한 LDPE 식품포장 필름의 차단성 향상 (Improvement of Barrier Property of LDPE Food Packaging Film by Plasma Polymerization)

  • 김경석;조동련
    • 폴리머
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    • 제32권1호
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    • pp.38-42
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    • 2008
  • 메탄, 아세틸렌, hexamethyldisiloxane(HMDSO) 및 HMDSO+산소를 플라스마 중합시켜 식품포장용으로 사용되고 있는 저밀도 폴리에틸렌(LDPE) 필름의 표면에 얇은 박막을 코팅하여 LDPE 필름의 차단성을 향상시키고자 하였다. 산소에 대한 차단성은 HMDSO+산소(유량 : 0.6+9.0 SCCM) 플라스마로 40 W에서 10분간 코팅할 경우 가장 크게 향상되어 산소 투과도가 18.6배까지 감소되었으며, 이산화탄소와 수분에 대한 차단성은 아세틸렌(유량 : 0.75 SCCM) 플라스마로 10 W에서 10분간 코팅할 경우 가장 크게 향상되어 이산화탄소와 수분 투과도가 각각 12.0배와 3.0배까지 감소되었다. 또한, 이렇게 코팅된 필름을 사용하여 방울토마토, 오이, 팽이버섯 등을 포장할 경우, 신선도 유지기간이 코팅 전에 비하여 $1.5{\sim}3.0$배까지 연장되었다.

New Method of Gas Barrier Coating on Plastic Substrate for Flexible Display

  • Hwang, Hee-Nam;Choi, Jae-Moon;Kim, In-Sun;Park, Jong-Rak
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2004년도 Asia Display / IMID 04
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    • pp.985-987
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    • 2004
  • A plastic substrate for flexible display is developed. The gas barrier property in the substrate is improved through depositing metal and metal oxide multi layer on plastic film by PVD process. The metal/metal-oxide multiplayer on plastic film shows excellent gas barrier property and optical property.

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PVD법으로 증착한 W-B-C-N 박막의 질소량에 따른 구조변화 연구 (Structure Behavior of Sputtered W-B-C-N Thin Film for various nitrogen gas ratios)

  • 송문규;이창우
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2005년도 추계학술대회 논문집 Vol.18
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    • pp.109-110
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    • 2005
  • We have suggested sputtered W-C-N thin film for preventing thermal budget between semiconductor and metal. These results show that the W-C-N thin film has good thermal stability and low resistivity. In this study we newly suggested sputtered W-B-C-N thin diffusion barrier. In order to improve the characteristics, we examined the impurity behaviors as a function of nitrogen gas flow ratio. This thin film is able to prevent the interdiffusion during high temperature (700 to $1000^{\circ}C$) annealing process and has low resistivity ($\sim$200$\mu{\Omega}-cm$). Through the analysis of X-Ray diffraction, resistivity and XPS, we studied structure behavior of W-B-C-N diffusion barrier.

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