• 한국세라믹학회지
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• 제46권6호
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• pp.679-684
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• 2009

Phosphors of $Eu^{2+}$ doped alkaline earth aluminates MA$l_2O_4:Eu^{2+}$ (M=Sr, Ba, Ca) have been prepared by sol-gel process and their characterization of photoluminescence and photocurrent properties have been performed. The phosphors prepared by sol-gel process, due to its advantage of better homogeneity and low synthetic temperature, was synthesized as single phases at lower temperature than the solid-state process; $800{\sim}1000{^{\circ}C}$ for 6 h under mild reduction atmosphere (Ar- 3% $H_2$). It was confirmed that SrA$l_2O_4:Eu^{2+}$ composition revealed the most excellent properties in the brightness and photocurrent.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1990년도 추계학술대회 논문집 학회본부
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• pp.143-149
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• 1990

A sol-gel processing of $YBa_2Cu_3O_{7-x}$ superconductor using metal nitrate salts and sodium hydroxide as the starting materials has been investigated because of the need to produce pure, hompgeneous superconducting materials. Since the precipitation of barium hydroxides can be obtained only at high basicities, the process has to be carried out Ca. pH 13 to get the simultaneous coprecipitation with the other metal hydroxides. The involved reaction mechanisms were investigated and intermediate and final products were characterized by means of thermogravimetric analysis(TGA), infra-red(IR) spectroscopy, X-ray diffraction(XRD) analysis, scanning electron microscopy(SEM), thermal mechanical analysis(TMA) and electrical measurement.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 하계학술대회 논문집
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• pp.1030-1035
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• 2001

Strontium barium niobate, (Sr$\sub$0.5/Ba$\sub$0.5/Nb$_2$O$\sub$6/), thin films of various composition were prepared by the sol-gel method. Solution derived from acetate powders and niobium ethoxide in a mixture of acetic acid, ethylene glycol and 2-methoxyehanol was spin-coated onto bare silicon, Pt-coated silicon and fused silica substrates. Processing parameters were optimized to develop stable solutions which yielded films with relatively low crystallization temperatures. It was determined that ethylene glycol was a necessary component of the solution to increase stability against precipitation and to decrease the crystallization temperature of the films as confirmed by XRD and FT-IR analyses.

• 전자공학회논문지A
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• 제33A권6호
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• pp.120-126
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• 1996

In the present study, we have studied on the characteristics of BST thin films with various Ba/Sr ratios by using sol-gel method. Barium-acetate, strontium-acetate and titanium isopropoxide are used as starting materials to fabricate BST thin films by sol-gel method. The fabrication conditions are estabilished through the TG-dT analyses and XRD measurements. BST thin films with the Ba/Sr ratios of 90/10, 70/30, 50/50 and 30/70 were deposited on the Pt/Ta/SiO$_{2}$Si substrate with the estabilished sol-gel process, and their characteristics were examined. The relative permittivity and the leakage current density at 5V vary from 287 to 395 and from 2.3 to 220${\mu}$A/cm$^{2}$, respectively, with various Ba/Sr ratio. Among the films investigatd in this research, BST (70/30) thin film shows the best relative permittivity and dielectric loss of BST (70/30) thin film are 395 and 0.045, respectively and the leakage current density at 5V is 2.3${\mu}$A/cm$^{2}$.

• 한국자기학회지
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• 제9권1호
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• pp.35-40
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• 1999

M-type Ba 페리이트를 Ba 대신 Sr으로 치환시킨 페라이트 분말과 Fe대신 Co-Ti으로 치환시킨 육방 페라이트 분말을 각각 citrate sol-gel법과 2 MOE sol-gel법으로 합성하였다. 이들 분말들을 소결 처리 후 수소 분위기 하에서 온도를 변화시키면서 환원처리 하였다. X-선 회절을 이용한 결정구조 해석에서 105$0^{\circ}C$에서 소결 처리된 분말의 경우 단일상의 M-type 육방정 구조로 나타났다. X-선 회절실험 결과 Sr0.5Ba0.5Fe12O19과 다르게, Co-Ti 치환형 페라이트인 Sr0.7Ba0.3Fe10CoTiO19에서는 Co-Ti 치환이 환원과정을 저지시키는 효과가 있는 것으로 나타났다. 육방 페라이트에서 수소환원에 의한 포화자화 Ms값의 증가 원인을 알아보기 위하여 Mossbauer 분광실험을 실시하였다. Mossbauer 실험결과는 대부분의 $\alpha$-Fe가 4fvi자리와 12k자리로부터 발생되는 것으로 나타났으며, 이 $\alpha$-Fe 형성에 의한 Fe3+이온의 결함이 자기 상호작용의 붕괴를 가져와서, 자기이방성의 변화를 초래하고 또한 Ms값의 증가를 가져오는 것으로 추측된다.

• 한국전기전자재료학회논문지
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• 제15권11호
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• pp.933-938
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• 2002

(Ba,Sr)TiO$_{4}$ (BST) thin films on Pt/Ti/SiO$_{2}$/Si substrates were deposited by a sol-gel method and the etch characteristics of BST thin films have been investigated as a function of gas mixing ratio. The maximum etch rate of the BST films was 440 $AA$/min under such conditions as: CF$_{4}$(CF$_{4}$＋Ar) of 0.2, RF-power of 700 W, DC-bias voltage of -200 V, pressure of 15 mTorr and substrate temperature of 30 $^{circ}C$. The selectivities of BST to Pt, SiO$_{2}$ and PR were 0.38, 0.25 and 0.09, respectively. In the XPS (X-ray photoelectron spectroscopy) analysis, Barium (Ba) and Strontium (Sr) component in BST thin films formed low volatile compounds such as BaFx, SrFx, which are forms by the chemical reaction with F atoms and is removed by Ar ion bombardment. Titanium (Ti) is removed by chemical reaction such as TiF with ease. The result of secondary ion mass spectrometry (SIMS) analysis confirmed the existence of the BaFx, SrFK, TiFx.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.167-167
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• 2008

The barium strontium calcium titanate powders were prepared by sol-gel method. Ferroelectric $(Ba_{0.54}Sr_{0.36}Ca_{0.1})TiO_3$(BSCT) thick films were fabricated by the screen-printing method on alumina substrate. And we investigated the structural and dielectric properties of BSCT thick films with the variation of sintering temperature. As a result of thermal analysis, BSCT polycrystalline perovskite phase was formed at around $660^{\circ}C$. The results of X-ray diffraction analysis were showed a cubic perovskite structure without presence of the second phase in all BSCT thick films. The average grain size and the thickness of the specimen sintered at $1450^{\circ}C$ were about 1.6 mm and 45 mm, respectively. The relative dielectric constant increased and the dielectric loss decreased with increasing the sintering temperature, the values of the BSCT thick films sintered at $1450^{\circ}C$ were 5641 and 0.4% at 1kHz, respectively.

• Journal of Magnetics
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• 제6권1호
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• pp.23-26
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• 2001

Nano-crystalline hexaferrite $BaFe_{12}O_{19}$(BaM) thin films have been prepared by the sol-gel method. A solution of Ba-nitrate and Fe-nitrates was dissolved in solvent with the stoichiometric ratio Ba/Fe=1/10. Films were spin-coated onto $SiO_2$Si substrates, dried and then heated in air at various temperatures. In films prepared at a drying temperature $T_d=250^{\circ}C$ and a crystallizing temperature 650${\circ}C$, single-phase BaM was obtained. High coercivities were obtained in these nano-crystalline thin films, 4~5.5 kOe for hexaferrite. Polycrystalline BaM/$SiO_2$/Si(100) thin films were characterized by Rutherford backscattering (RBS), thermogravimetry (TGA), differential thermal analysis (DTA), x-ray diffraction (XRD), and vibrating sample magnetometry (VSM), as well as Fourier transform infrared spectroscopy (FTIR). The perpendicular coercivity $H_{C\bot}$ and in-plane coercivity $H_{CII}$ after annealing at 650${\circ}C$ for 2 hours were 4766 Oe and 4480 Oe, respectively, at room temperature, under a maximum applied field of 10 kOe.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 제5회 영호남 학술대회 논문집
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• pp.31-34
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• 2003

($Ba_{0.6-x}Sr_{0.4}Ca_x)TiO_3$ (BSCT) (x=0.10, 0.15, 0.20) powder, prepared by the sol-gel method, were mixed with organic vehicle and the BSCT thick films were fabricated by the screen-printing techniques on alumina substrates using the BSCT paste. The structural and the electrical properties were investigated for various composition ratio and sintering temperature. BSCT thick film thickness, obtained by four printings, was approximately 110 ~ 120 ${\mu}m$. The Curie temperature and dielectric constant at room temperature were decreased with increasing Ca content. The relative dielectric constant, dielectric loss and tunability of the BSCT(50/40/10) specimen, which was sintered at $1420^{\circ}C$ and measured at 1MHz, were about 910, 0.46% and 9.28% at 5kV/cm, respectively.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.234-234
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• 2008

Chemically homogeneous $Ba_{0.6}Sr_{0.4}TiO_3$ (BST) sols were synthesized using barium acetate, strontium acetate, and titanium isoproxide as starting materials. BST thin films of thickness 340 nm were deposited on Pt/$TiO_2/SiO_2$/Si and alumina substrates using spin coating method. The technique used for the processing of these films was Ultraviolet (UV) sol-gel photoannealing, using phto-sensitivity precursor solutions and UV-assisted rapid thermal processing(UV-RTP). The crystallization behaviour of the BST sols and thin films was studied by differential thermal analysis (DTA) and X-ray diffraction (XRD). Variation of permittivity and dielectric loss were measured in LCR-meter, model HP 4394A.