• Journal of the Korean Society for Precision Engineering
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• v.16 no.3 s.96
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• pp.78-83
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• 1999

The bonding interface is dependent on the properties of surfaces prior to SDB(silicon wafer direct bonding). In this paper, we prepared silicon surfaces in several chemical solutions, and annealed bonding wafers which were combined with thermally oxidized wafers and bare silicon wafers in the temperature range of $600{\times}1000^{\circ}C$. After bonding, the bonding interface is investigated by an infrared(IR) topography system which uses the penetrability of infrared through silicon wafer. Using this procedure, we observed intrinsic bubbles at elevated temperatures. So, we verified that these bubbles are related to cleaning and drying conditions, and the interface oxides on silicon wafer reduce the formation of intrinsic bubbles.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.323-323
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• 2010

Saw damage of crystalline silicon wafer is unavoidable factor. Usually, alkali treatment for removing the damage has been carried out as the saw damage removal (SDR) process for priming the alkali texture. It usually takes lots of time and energy to remove the sawed damages for solar grade crystalline silicon wafers We implemented two different mixed acidic solution treatments to obtain the improved surface structure of silicon wafer without much sacrifice of the silicon wafer thickness. At the first step, the silicon wafer was dipped into the mixed acidic solution of $HF:HNO_3$=1:2 ration for polished surface and at the second step, it was dipped into the diluted mixed acidic solution of $HF:HNO_3:H_2O$=7:3:10 ratio for porous structure. This double treatment to the silicon wafer brought lower reflectance (25% to 6%) and longer carrier lifetime ($0.15\;{\mu}s$ to $0.39\;{\mu}s$) comparing to the bare poly-crystalline silicon wafer. With optimizing the concentration ratio and the dilution ratio, we can not only effectively substitute the time consuming process of SDR to some extent but also skip plasma enhanced chemical vapor deposition (PECVD) process. Moreover, to conduct alkali texture for pyramidal structure on silicon wafer surface, we can use only nitric acid rich solution of the mixed acidic solution treatment instead of implementing SDR.

• Korean Journal of Materials Research
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• v.15 no.3
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• pp.183-188
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• 2005

It was studied in this article how the flexural strength of bare silicon chips is influenced by adopting dual wafer back-lapping process. The experimental results showed that an additional finishing process after the conventional grinding process improves the flexural strength of bare chips by more than 2-fold. In particular, this work showed that the proper removal of the grinding marks$(Ra=0.1\;{\mu}m)$existing on the wafer back-surface resulting from the grinding process significantly contiributes to the enhancement of chip strength.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.429-429
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• 2012

To investigate the gettering effect of B-doped n-type monocrystalline silicon wafer, we made the p-n junction by diffusing boron into n-type monocrystalline Si substrate and then oxidized the boron doped n-type monocrystalline silicon wafer by in-situ wet and dry oxidation. After oxidation, the minority carrier lifetime was measured by using microwave photoconductance and the sheet resistance by 4-point probe, respectively. The junction depth was analyzed by Secondary Ion Mass Spectrometry (SIMS). Boron diffusion reduced the metal impurities in the bulk of silicon wafer and increased the minority carrier lifetime. In the case of wet oxidation, the sheet resistance value of ${\sim}46{\Omega}/{\Box}$ was obtained at $900^{\circ}C$, depostion time 50 min, and drive-in time 10 min. Uniformity was ~7% at $925^{\circ}C$, deposition time 30 min, and drive-in time 10 min. Finally, the minority carrier lifetime was shown to be increased from $3.3{\mu}s$ for bare wafer to $21.6{\mu}s$ for $900^{\circ}C$, deposition 40 min, and drive-in 10 min condition. In the case of dry oxidation, for the condition of 50 min deposition, 10 min drive-in, and O2 flow of 2000 SCCM, the minority carrier lifetime of 16.3us, the sheet resistance of ${\sim}48{\Omega}/{\Box}$, and uniformity of 2% were measured.

• Journal of the Korean Society for Precision Engineering
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• v.21 no.10
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• pp.26-33
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• 2004

Ultra precision grinding technology has been developed from the refinement of the abrasive, the development of high stiffness equipment and grinding skill. The conventional wafering process which consists of lapping, etching, 1 st, 2nd and 3rd polishing has been changed to the new process which consists of precision surface grinding, final polishing and post cleaning. Especially, the ultra precision grinding of wafer improves the flatness of wafer and the efficiency of production. Furthermore, it has been not only used in bare wafer grinding, but also applied to wafer back grinding and SOI wafer grinding. This paper focuses on the flatness of the ground wafer. Generally, the ground wafer has concave pronto because of the difference of wheel path density, grinding temperature and elastic deformation of the equipment. Wafer tilting is applied to avoid non-uniform material removal. Through the geometric analysis of wafer grinding process, the profile of the ground wafer is predicted by the development of profile simulator.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2003.06a
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• pp.98-101
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• 2003

As the ultra precision grinding can be applied to wafering process by the refinement of the abrasive. the development of high stiffness equipment and grinding skill, the conventional wafering process which consists of lapping, etching, 1st, 2nd and 3rd polishing could be exchanged to the new process which consists of precision surface grinding, final polishing and post cleaning. Especially, the ultra precision grinding of wafer improves the flatness of wafer and the efficiency of production. Futhermore, it has been not only used in bare wafer grinding, but also applied to wafer back grinding and SOI wafer grinding. This paper focused on the flatness of the ground wafer. Generally, the ground wafer has concave profile because of the difference of wheel path density, grinding temperature and elastic deformation of the equiptment. Tilting mathod is applied to avoid such non-uniform material removes. So, in this paper, the geometric analysis on grinding process is carried out, and then, we can predict the profile of th ground wafer by using profile simulation.

• Proceedings of the KSME Conference
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• 2003.04a
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• pp.980-986
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• 2003

As the ultra precision grinding can be applied to wafering process by the refinement of the abrasive, the development of high stiffness equipment and grinding skill, the conventional wafering process which consists of lapping, etching, Ist, 2nd and 3rd polishing could be exchanged to the new process which consists of precision surface grinding, final polishing and post cleaning. Especially, the ultra precision grinding of wafer improves the flatness of wafer and the efficiency of production. Futhermore, it has been not only used in bare wafer grinding, but also applied to wafer back grinding and SOI wafer grinding. This paper focused on the effect of the wheel path density and relative velocity on the characteristic of ground wafer in in-feed grinding with cup-wheel. It seems that the variation of the parameters in radial direction of wafer results in the non-uniform surface quality over the wafer. So, in this paper, the geometric analysis on grinding process is carried out, and then, the effect of the parameters on wafer surface quality is evaluated

• Proceedings of the Korean Society of Tribologists and Lubrication Engineers Conference
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• 2001.06a
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• pp.127-134
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• 2001

Nano adhesion and friction between a Sj$_3$N$_4$ AFM tip and thin silver films were experimentally studied. Tests were performed to measure the nano adhesion and friction in both AFM(atomic force microscope) and LFM(lateral force microscope) modes in various ranges of normal load. Thin silver films deposited by IBAD (ion beam assisted deposition) on Si-wafer (100) and Si-wafer of different surface roughness were used. Results showed that nano adhesion and friction decreased as the surface roughness increased. When the Si surfaces were coated by pure silver, the adhesion and friction decreased. But the adhesion and friction were not affected by the thickness of IBAD silver coating. As the normal force increased, the adhesion forces of bare Si-wafer and IBAD silver coating film remained constant, but the friction forces increased linearly. Test results suggested that the friction was mainly governed by the adhesion as long as the normal load was low.

• Macromolecular Research
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• v.15 no.4
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• pp.348-356
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• 2007

The aim of this study was to fabricate a submicro-and micro-patterned fibronectin coated wafer for a cell culture, which allows the positions and dimensions of the attached cells to be controlled. A replica molding was made into silicon via a photomask in quartz, using E-beam lithography, and then fabricated a polydimethylsiloxane stamp using the designed silicon mold. Hexadecanethiol $[HS(CH_2){_{15}}CH_3]$, adsorbed on the raised plateau of the surface of polydimethylsiloxane stamp, was contact-printed to form self-assembled monolayers (SAMs) of hexadecanethiolate on the surface of an Au-coated glass wafer. In order to form another SAM for control of the surface wafer properties, a hydrophilic hexa (ethylene glycol) terminated alkanethiol $[HS(CH_2){_{11}}(OCH_2CH_2){_6}OH]$ was also synthesized. The structural changes were confirmed using UV and $^1H-NMR$ spectroscopies. A SAM terminated in the hexa(ethylene glycol) groups was subsequently formed on the bare gold remaining on the surface of the Aucoated glass wafer. In order to aid the attachment of cells, fibronectin was adsorbed onto the resulting wafer, with the pattern formed on the gold-coated wafer confirmed using immunofluorescence staining against fibronectin. Fibronectin was adsorbed only onto the SAMs terminated in the methyl groups of the substrate. The hexa (ethylene glycol)-terminated regions resisted the adsorption of protein. Human dermal fibroblasts (P=4), obtained from newborn foreskin, only attached to the fibronectin-coated, methyl-terminated hydrophobic regions of the patterned SAMs. N-HDFs were more actively adhered, and spread in a pattern spacing below $14{\mu}m$, rather than above $17{\mu}m$, could easily migrate on the substrate containing spacing of $10{\mu}m$ or less between the strip lines.

• Laser Solutions
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• v.9 no.3
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• pp.7-13
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• 2006

Auto focusing system to find optimized focal position of laser beam used for material process has been investigated by using fiber confocal method. Wavelength of laser diode (LD) and diameter of single-mode fiber are 780nm and $5.3{\mu}m$, respectively. Intensity distributions of beam reflected from the surface of mirror and silicon bare wafer have been observed in a gaussian form. Experimental results show that focal position obtained by LD is shifted from one observed from surface scribed by laser about $80{\mu}m$. It is due to the difference of wavelength and each divergence of between LD and laser used for material process. It is confirmed that auto focusing control system through position calibration has operated steadily.