• Nuclear Engineering and Technology
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• v.26 no.2
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• pp.179-189
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• 1994

A performance of reactor coolant pump in two-phase flow is examined using the pump geometric conditions and the performance of the pump in single-phase flow. Wall friction loss of the reactor coolant pump in single-phase flow is prdicted using the Truckenbrodt boundary layer theory, and the head loss in two-phase flow is predicted with calculated well friction loss and separation loss coefficients. The analysis results are compared with the Combustion Engineering pump test data. The effect of two-phase multiplier on the peak clad temperature in Loss-of-Coolant Accident is also examined using the RELAP5 and the results indicate the importance of its accuracy.

• Nuclear Engineering and Technology
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• v.55 no.4
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• pp.1400-1409
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• 2023

In this study, three condensation models of the CUPID code, i.e., the resolved boundary layer approach (RBLA), heat and mass transfer analogy (HMTA) model, and an empirical correlation, were tested and validated against the COPAIN and CAU tests. An improvement on HMTA model was also made to use well-known heat transfer correlations and to take geometrical effect into consideration. The RBLA was a best option for simulating the COPAIN test, having mean relative error (MRE) about 0.072, followed by the modified HMTA model (MRE about 0.18). On the other hand, benchmark against CAU test (under natural convection and occurred on a slender tube) indicated that the modified HMTA model had better accuracy (MRE about 0.149) than the RBLA (MRE about 0.314). The HMTA model with wall function and the empirical correlation underestimated significantly, having MRE about 0.787 and 0.55 respectively. When using the HMTA model, consideration of geometrical effect such as tube curvature was essential; ignoring such effect leads to significant underestimation. The HMTA and the empirical correlation required significantly less computational resources than the RBLA model. Considering that the HMTA model was reasonable accurate, it may be preferable for large-scale simulations of containment.

• Proceedings of the Korean Institute of Building Construction Conference
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• 2021.05a
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• pp.295-296
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• 2021

With the recent diversification and complication of buildings, the functions of building are also developing. As much as the development of buildings, the machine or equipment used for them is also developing. Thus, all sorts of domestic/foreign industrial facilities and fire stations in the whole nation are using the electric shutter that could meet the insulation just like the exterior wall of general buildings, for bringing-in/storage and crime prevention/fire prevention. Currently, various types of electric shutters are used. Such wrong operation and poor management are causing many panel-falling accidents. This study researched the reduction of electric shutter panel-falling risk by reviewing the domestic/foreign laws and standards, and researching the new safety equipment. First, the causes for falling and accident types were drawn by analyzing the cases of electric shutter accidents. After that, a checklist as the measures for reducing the falling of electric shutter in building was suggested by analyzing the items for the inspection of electric shutter.

• Journal of the Korean Geotechnical Society
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• v.18 no.4
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• pp.339-347
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• 2002

An in-situ experiment was performed to evaluate the pullout resistance capacity of chains which is used as a reinforcement of reinforced earth wall. It was also considered that chain was combined with a bar or L-type steel angle by the transverse reinforcement member in the experiment. About 80 pullout tests were peformed with varying the lengths of chain(2.0m, 2.5m, and 3.0m), the combination of each transverse members(chain only, chain＋bar, or chain＋angle), and the vertical placement of reinforcements. In the case that uses a chain only and a chain combined with bar, the maximum displacement was about 150mm and load continuously increased to the ultimate tensile strength of chain, and then tension failure of chains occurred. But in the case of a chain combined with angle, the displacement decreased to about 100mm and so it was expected that this combination can constrain the displacement of chain. On the other hand, comparing the yielding pullout load measured in the field to that calculated by theoretical equation, it is shown that measured values are 1.2~3.0 times greater than those of calculated values according to the length of chain, normal vertical stress, and the combination of chain with transverse members. However, the difference in the increment of yielding pullout load between bar and angle is not clear but it appears almost the same increment. It is expected that chain can be safely used as reinforcements of reinforced earth wall, although a theoretical estimation of the pullout resistance capability of chain is too conservative.

• Journal of Sensor Science and Technology
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• v.23 no.1
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• pp.51-57
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• 2014

The evaporating materials for $MgGa_2Se_4$ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, $MgGa_2Se_4$ compounded polycrystal powder was deposited on thoroughly etched semi-insulated GaAs(100) substrate by the hot wall epitaxy (HWE) method system. The source and substrate temperatures of optimized growth conditions, were $610^{\circ}C$ and $400^{\circ}C$, respectively.The source and substrate temperatures were $610^{\circ}C$ and $400^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by double crystal X-ray diffraction (DCXD). The temperature dependence of the energy band gap of the $MgGa_2Se_4$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)=2.34\;eV-(8.81{\times}10^{-4}\;eV/K)T^2/(T+251\;K)$. After the as-grown $MgGa_2Se_4$ single crystal thin films was annealed in Mg-, Se-, and Ga-atmospheres, the origin of point defects of $MgGa_2Se_4$ single crystal thin films has been investigated by the photoluminescence (PL) at 10 K. The native defects of $V_{Mg}$, $V_{Se}$ obtained by PL measurements were classified as a donors or acceptors type. And we concluded that the heat-treatment in the Se-atmosphere converted $MgGa_2Se_4$ single crystal thin films to an optical n-type. Also, we confirmed that Ga in $MgGa_2Se_4$/GaAs did not form the native defects because Ga in $MgGa_2Se_4$ single crystal thin films existed in the form of stable bonds.

• Korean Journal of Materials Research
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• v.23 no.12
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• pp.714-721
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• 2013

A stoichiometric mixture of evaporating materials for $ZnAl_2Se_4$ single-crystal thin films was prepared in a horizontal electric furnace. These $ZnAl_2Se_4$ polycrystals had a defect chalcopyrite structure, and its lattice constants were $a_0=5.5563{\AA}$ and $c_0=10.8897{\AA}$.To obtain a single-crystal thin film, mixed $ZnAl_2Se_4$ crystal was deposited on the thoroughly etched semi-insulating GaAs(100) substrate by a hot wall epitaxy (HWE) system. The source and the substrate temperatures were $620^{\circ}C$ and $400^{\circ}C$, respectively. The crystalline structure of the single-crystal thin film was investigated by using a double crystal X-ray rocking curve and X-ray diffraction ${\omega}-2{\theta}$ scans. The carrier density and mobility of the $ZnAl_2Se_4$ single-crystal thin film were $8.23{\times}10^{16}cm^{-3}$ and $287m^2/vs$ at 293 K, respectively. To identify the band gap energy, the optical absorption spectra of the $ZnAl_2Se_4$ single-crystal thin film was investigated in the temperature region of 10-293 K. The temperature dependence of the direct optical energy gap is well presented by Varshni's relation: $E_g(T)=E_g(0)-({\alpha}T^2/T+{\beta})$. The constants of Varshni's equation had the values of $E_g(0)=3.5269eV$, ${\alpha}=2.03{\times}10^{-3}eV/K$ and ${\beta}=501.9K$ for the $ZnAl_2Se_4$ single-crystal thin film. The crystal field and the spin-orbit splitting energies for the valence band of the $ZnAl_2Se_4$ were estimated to be 109.5 meV and 124.6 meV, respectively, by means of the photocurrent spectra and the Hopfield quasicubic model. These results indicate that splitting of the ${\Delta}so$ definitely exists in the ${\Gamma}_5$ states of the valence band of the $ZnAl_2Se_4/GaAs$ epilayer. The three photocurrent peaks observed at 10 K are ascribed to the $A_1$-, $B_1$-exciton for n = 1 and $C_{21}$-exciton peaks for n = 21.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.08a
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• pp.84-91
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• 2002

The stochiometric composition of $AgGaS_2$/GaAs polycrystal source materials for the $AgGaS_2$/GaAs epilayer was prepared from horizontal furnace. From the extrapolation method of X-ray diffraction patterns it was found that the polycrystal $AgGaS_2$/GaAs has tetragonal structure of which lattice constant an and Co were 5.756 $\AA$ and 10.305 $\AA$, respectively. $AgGaS_2$/GaAs epilayer was deposited on throughly etched GaAs(100) substrate from mixed crystal $AgGaS_2$/GaAs by the Hot Wall Epitaxy (HWE) system. The source and substrate temperature were $590^{\circ}C$ and $440^{\circ}C$ respectively. The crystallinity of the grown $AgGaS_2$/GaAs epilayer was investigated by the DCRC (double crystal X-ray diffraction rocking curve). The optical energy gaps were found to be 2.61 eV for $AgGaS_2$/GaAs epilayer at room temperature. The temperature dependence of the photocurrent peak energy is well explained by the Varshni equation, then the constants in the Varshni equation are given by $\alpha=8.695{\times}10^{-4}$ eV/K, and $\beta=332K$. From the photocurrent spectra by illumination of polarized light of the $AgGaS_2$/GaAs epilayer, we have found that crystal field splitting ${\Delta}Cr$ was 0.28 eV at 20 K. From the PL spectra at 20 K, the peaks corresponding to free and bound excitons and a broad emission band due to D-A pairs are identified. The binding energy of the free excitons are determined to be 0.2676 eV and 0.2430 eV and the dissociation energy of the bound excitons to be 0.4695 eV.

• Journal of the Korean Geosynthetics Society
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• v.21 no.2
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• pp.57-65
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• 2022

This study simulated the shock wave propagation through the tamping material between explosives and hole wall at blasting works and verified the effect of tamping materials. The Arbitrary Lagrangian-Eulerian(ALE) method was selected to model the mixture of solid (Lagrangian) and fluid (Eulerian). The time series analysis was carried out during blasting process time. Explosives and tamping materials (air or water) were modeled with finite element mesh and the hole wall was assumed as a rigid body that can determine the propagation velocity and shock force hitting the hole wall from starting point (explosives). The numerical simulation results show that the propagation velocity and shock force in case of water were larger than those in case of air. In addition, the real site at blasting work was modeled and simulated. The rock was treated as elasto-plastic material. The results demonstrate that the instantaneous shock force was larger and the demolished block size was smaller in water than in air. On the contrary, the impact in the back side of explosives hole was smaller in water, because considerable amount of shock energy was used to demolish the rock, but the propagation of compression through solid becomes smaller due to the damping effect by rock demolition. Therefore, It can be proven that the water as the tamping media was more profitable than air.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.23 no.6
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• pp.283-290
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• 2013

A stoichiometric mixture of evaporating materials for $MgGa_2Se_4$ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, $MgGa_2Se_4$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperatures were $610^{\circ}C$ and $400^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by double crystal X-ray diffraction (DCXD). The temperature dependence of the energy band gap of the $MgGa_2Se_4$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)=2.34 eV-(8.81{\times}10^{-4}eV/K)T^2/(T+251K)$. The crystal field and the spin-orbit splitting energies for the valence band of the $MgGa_2Se_4$ have been estimated to be 190.6 meV and 118.8 meV, respectively, by means of the photocurrent spectra and the Hopfield quasicubic model. These results indicate that the splitting of the ${\Delta}so$ definitely exists in the ${\Gamma}_5$ states of the valence band of the $MgGa_2Se_4$/GaAs epilayer. The three photocurrent peaks observed at 10 K are ascribed to the $A_{1^-}$, $B_{1^-}$exciton for n = 1 and $C_{27}-exciton$ peaks for n = 27.

• Journal of Korean Society of Environmental Engineers
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• v.29 no.6
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• pp.706-714
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• 2007

This study suggested a method for prediction of residual chlorine and THMs in water distribution system by measurement of residual chlorine, THMs, and other parameters, estimation of chlorine decay coefficients and THM formation coefficients, and simulation of water qualities using pipe network analysis. Bulk decay coefficients of parallel first-order were obtained by bottle tests, and pipe wall decay coefficients of first-order were estimated through evaluation of 5 models, which showed the lowest values of 0.03 for MAE(mean absolute error) and 0.037 MAE in comparison with the observed in field. And bottle tests were conducted to model first-order reaction of THM formation by nonlinear least square regression and the resultant coefficients were compared with the observed in field. As a result, the coefficients of determination$(R^2)$ for the observed and the predicted values were 0.98 in September and 0.82 in November, and the formation of THMs was predicted by modeling.