• Journal of IKEEE
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• v.11 no.4
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• pp.265-271
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• 2007

A new type of photonic bandgap(PBG) structures that consist of arrays of spiral metal patches is proposed in this paper. Reflection phases and radiation of these PBG structures are simulated by high frequency structure simulator(HFSS) to characterize their performance. The simulation results show that the resonant frequency of the proposed PBG structures gets significantly lower than those of the PBG structures with square metal patches, but that the radiation is nearly the same for both of the PBG structures. Analysis on reflection phases reveals that the lowering of the resonant frequency is associated with the increase in capacitance.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.32A no.12
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• pp.122-129
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• 1995

The most important feature of a-Si TFT is dense localized states such as dangling bonds which exist in tis bandgap. Electrons trapped by localized states dominate the potential distribution in the active a-Si region ,and influence the performance of a-Si TFT. In this paper, we describe the electrical characteristics of a-Si TFT with respect to trap distribution within bandgap, electron mobility and interface states using 2-Dimensional device simulator and compare the result of simulation with measurements. Using the mixed-mode simulator, we can predict the potential variation of pixel which causes residual image problem during the turn-off of a-Si TFT driving circuit. Therefore it is possible to consider trade-off between potential variation of pixel and turn-on current of a-Si TFT for the optimized driving circuit.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.350.2-350.2
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• 2014

We investigated the structural and optical evolution of Ga2O3 thin films on glass substrates deposited using radio frequency magnetron sputtering. Initially, amorphous Ga2O3 thin film is grown, and then, surface humps and nanowire (NW) bundles are gradually formed as the film thickness increases. The surface humps are Ga-rich and provide nucleation sites for NWs through a self-catalytic vapor-liquid-solid mechanism with self-assembled Ga droplets. Both the surface humps and the NWs induce variation of the optical properties such as the optical bandgap and refractive index by absorbing light in the ultraviolet region.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.575-575
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• 2012

Synthesis of novel two dimensional materials has gained tremendous attention recently as they are considered as alternative materials for replacing graphene that suffers from a lack of bandgap, a property that is essential for many applications. Single layer molybdenum disulfide ($MoS_2$) has a direct bandgap (1.8eV) that is promising for use in next-generation optoelectronics and energy harvesting devices. We have successfully grown high quality single layer $MoS_2$ by a facile vapor-solid transport route. As-grown single layer $MoS_2$ was carefully characterized by using X-ray diffraction, Raman spectroscopy, field emission scanning electron microscopy and electrical transport measurement. The results indicate that a high quality single layer $MoS_2$ can be successfully grown on silicon substrate. This may open up great opportunities for the exploration of novel nanoelectronic devices.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.163-163
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• 2011

박막태양전지의 가장 큰 문제점인 stablity가 우수한 조건을 찾는 연구가 많이 진행되고 있다. 그 중 i-layer는 박막태양전지의 구조 중 가장 크게 degradation이 일어나는 부분으로 알려져 왔다. 이에 i-layer 부분을 서로 특성이 다른 두 개의 막을 사용함으로써 stability를 향상시키는 방법이 제시되었는데 이 방법을 사용하는 동시에 높은 효율을 확보하기위해 이 실험을 진행하였다. i-layer의 제작 조건을 가변하여 다양한 Bandgap Energy를 가지는 단일막을 확보하였고 이를 ASA simulation을 이용해 cell에 적용하여 높은 효율을 얻고자 하였다. 결과로 i-layer Bandgap Energy를 1.8eV와 1.75eV로 쌓았을 때 최적의 효율과 electric field를 가짐을 확인할 수 있었다. 본 연구를 통해 stability 향상시킨 구조인 double i-layer 박막태양전지에서의 고효율화를 구현해 볼 수 있었다.

• Bulletin of the Korean Chemical Society
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• v.34 no.11
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• pp.3340-3344
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• 2013

The fabrication of polymer field-effect transistors with good electrical properties requires the minimization of molecular defects caused by low molecular weight (MW) fractions of a conjugated polymer. Here we report that the electrical properties of a narrow bandgap conjugated polymer could be dramatically improved as a result of dipping a thin film into a poor solvent. The dipping time in hexanes was controlled to efficiently eliminate the low molecular weight fractions and concomitantly improve the molecular ordering of the conjugated polymer. The correlation between the structural order and the electrical properties was used to optimize the dipping time and investigate the effects of the low MW fraction on the electrical properties of the resulting thin film.

• Proceedings of the Optical Society of Korea Conference
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• 2001.02a
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• pp.2-3
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• 2001

Characteristics of two-dimensional slab photonic crystal lasers will be summarized. Room temperature c.w operation is demonstrated at 1.6 $\mu\textrm{m}$ by using InGaAsP slab-waveguide triangular photonic crystal on top of wet-oxidized aluminum oxide. Recently, 2-D PBG structures have attracted a great deal of attention due to their simplicity in fabrication and theoretical study as compared to the three-dimensional counterparts [1]. Air-guided 2-D slab PBG lasers were reported by Caltech group (2). However, this air-slab structure is mechanically fragile and thermally unforgiving. Therefore, a new structure that can remove this thermal limitation is dearly sought after for 2-D PBG laser to have practical meaning. In this talk, we report room-temperature continuous operation of 2-D photonic bandgap lasers that are thermally and mechanically stable.(omitted)

• Proceedings of the Optical Society of Korea Conference
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• 2006.02a
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• pp.87-88
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• 2006

Bragg fibers, consisting of a low index core (including air) surrounded by a series of periodic layers of alternate high and low refractive index materials, each being higher than that of the core, form a 1D photonic bandgap (PBG). In view of the multitude of individual physical parameters that characterize a Bragg fiber, they offer a wide choice of parametric avenues to tailor their propagation characteristics. Owing to their unique PBG guidance mechanism, Bragg fibers indeed exhibit unusual dispersion characteristics that are otherwise nearly impossible to achieve in conventional silica fibers. Solid core Bragg fibers, amenable to fabrication by the highly mature MCVD technology, could be designed to realize broadband supercontinuum light. This talk would review our recent works on modeling of propagation characteristics, dispersion tailoring in them for applications as metro as well as dispersion compensating fibers and also as supercontinuum light generators.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.41 no.2
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• pp.53-58
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• 2004

In this paper, the low-phase dual-band VCO, by adding switching circuit with PIN diode at feedback loop of the oscillation part having negative-resistance, is realized. In order to reduce the phase noise of the VCO, PBG structure applied to the ground plane of the resonator. When applying for PBG structure, output power is -9.17㏈m and phase noise is -102㏈c/Hz at 5.25㎓, output power is -5.17㏈m and phase noise is -101㏈c/Hz at 1.8㎓, respectively.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.188-191
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• 2009

A high efficiency deep blue phosphorescent organic light-emitting diode (PHOLED) was developed using a new wide triplet bandgap host material (PPO1) with a phenylcarbazole and a phosphine oxide unit. The wide triplet bandgap host material was synthesized by a phosphornation reaction of 2-bromo-Nphenylcarbazole with chlorodiphenylphosphine. A deep blue emitting phosphorescent dopant, tris((3,5-difluoro-4-cyanophenyl)pyridine)iridium (FCNIr), was doped into the PPO1 host and a high quantum efficiency of 17.1 % and a current efficiency of 19.5 cd/A with a color coordinate of (0.14,0.15) were achieved in the blue PHOLED. The quantum efficiency of the deep blue PHOLED was better than any other quantum efficiency value reported up to now.