• Korean Chemical Engineering Research
• /
• 제57권3호
• /
• pp.331-337
• /
• 2019

광촉매로 검토된 물질 중에는 티타니아가 가장 큰 주목을 받아왔다. 그러나, 티타니아는 밴드갭 에너지가 높음으로 인하여 자외선 영역에서만 그 활성을 나타낼 수 있는 것으로 알려져 있다. 따라서, 티타니아의 광촉매 활성을 가시광선 영역으로 확대하려는 노력들이 있어왔으며, 대표적인 방안들은 티타니아의 표면 개질을 통해 시도되었다. 티타니아 광촉매가 가시광선 영역에서 활성을 갖기 위해서는 표면 개질을 요구한다. 티타니아의 다양한 표면 개질 방안 중 질소도핑은 제조의 수월성과 친환경적인 장점을 가진다. 질소 도핑 티타니아는 가시광선 영역에서도 가전자대의 전자가 전도대로 여기되며, 광촉매 활성을 잘 나타내고 있다. 본 연구에서는 발표된 많은 자료에 근거하여 티타니아 내부에 도핑된 질소 형태에 주목하였다. 여전히 논쟁이 계속되는 질소 도핑 제조방법과 티타니아 내부의 질소 형태에 대해서 살펴보았다. 특히, 질소 도핑 형태는 주로 두 가지로 보고되고 있으며, 티타니아 격자를 구성하는 산소를 질소가 치환하는 경우와 티타니아 격자 사이에서 질소산화물의 형태로 위치하는 경우가 알려져 있다. 지금도 가시광선 영역에서 물 분해를 할 수 있는 잠재력을 활용하려는 시도들은 지속적으로 나오고 있으며, 질소 도핑 티타니아의 향후 전망에 대해서도 살펴보았다.

• 대한전기학회:학술대회논문집
• /
• 대한전기학회 1995년도 하계학술대회 논문집 C
• /
• pp.1178-1180
• /
• 1995

In this paper, structual, optical and electrical properties of CdTe thin films prepared by electron beam evaporation method were studied. The crystal structure of CdTe films deposited at substrate temperature of $100{\sim}400^{\circ}C$ was zincblend type with preferential orientation of the (111)plane parallel to the substrate. The result of optical absoption and transmittance show that solar radiation with energy larger than band gap is almost completely absorbed within an about $2{\mu}m$ thickness of the evaporated CdTe layer and optical band gap of the CdTe film was larger with increasing substrate temperature. The resistivity of CdTe films deposited on the glass substrate was about $10^5{\sim}10^7{\Omega}cm$.

• 대한전자공학회:학술대회논문집
• /
• 대한전자공학회 2000년도 하계종합학술대회 논문집(2)
• /
• pp.103-106
• /
• 2000

The electronic properties of carbon nanotube are currently the focus of considerable interest. In this paper, the electronic properties of finite length effect in carbon nanotube for cabon nanoscale device is presented. To calculate the electronic properties of carbon nanotube, Empirical potential method (Brenner' hydrocarbon potential) for carbon and Tight binding molecular dynamic (TBMD) simulation are used. As a result of study, we have known that the value of the band gap decreases with increasing the length of the tube. The energy band gap of (6, 6) armchair carbon nanotube have the ranges between 0.3 eV and 2.5 eV. Also, our results were compared with the results of the other computational techniques. As that result, our results are very well united.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
• /
• pp.307-308
• /
• 2008

Zinc oxide is a direct band gap wurtzite-type semiconductor with band gap energy of 3.37eV at room temperature. the n-type doped ZnO oxides, B doped ZnO (BZO) is widely studied in TCOs materials as it shows good electrical, optical, and luminescent properties. we focused on the fabrication of B doped ZnO films with glass substrate using the LSMCD at low temperature. And Novel boron-doped ZnO thin films were deposited and characterized from the structural, optical, electrical point of view. The structure, morphology, and optical properties of the films were studied as a function of by employing the XRD, SEM, Hall system and micro Raman system.

• 한국전기전자재료학회논문지
• /
• 제13권10호
• /
• pp.817-821
• /
• 2000

In this work, we have investigated the dependence of annealing temperature(T$\_$a/) on optical and electrical properties of amorphous hydrogenated SiC(a-SiC:H) films. The a-SiC:H films were deposited on corning glass and p-type Si(100) wafer by PECVD (plasma enhanced vapor deposition) using SiH$_4$+CH$_4$+N$_2$ gas mixture. The experimental results have shown that the optical energy band gap(E$\_$opt/)of the thin films annealed at high temperatures have shown that the graphitization of carbon clusters and micro-crystalline silicon occurs. The current-voltage characteristics have shown good electrical properties at the annealed films.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2000년도 하계학술대회 논문집
• /
• pp.747-750
• /
• 2000

In this work, we investigated the dependence of optical and electrical properties of amorphous hydrogenated SiC (a-SiC:H) films on annealing temperature(T$\sub$a/). The a-SiC:H films were deposited by PECVD(plasma enhanced vapor deposition) on coming glass, p-type Si(100) wafer using SiH$_4$+CH$_4$+N$_2$gas mixture. The experimental results have shown that the optical energy band gap(E$\sub$g/) of the a-SiC thin films unchanged in the range of T$\sub$a/ from 400$^{\circ}C$ to 600$^{\circ}C$. The Raman spectrum of the thin films, annealed at high temperatures, has shown that graphitization of carbon clusters and micro-crystalline silicon occurs. The current-voltage characteristics have shown good electrical properties at the annealed films.

• Transactions on Electrical and Electronic Materials
• /
• 제3권1호
• /
• pp.23-29
• /
• 2002

The electronic properties of Carbon Nanotube(CNT) are currently the focus of considerable interest. In this paper, the electronic properties of finite length effect in CNT for the carbon nano-scale device is presented. To Calculate the electronic properties of CNT, Empirical potential method (the extended Brenner potential for C-Si-H) for carbon and Tight Binding molecular dynamic (TBMD) simulation are used. As a result of study, we have known that the value of the band gap decreases with increasing the length of the tube. The energy band gap of (6,6) armchair CNT have the ranges between 0.3 eV and 2.5 eV. Also, our results are in agreements with the result of the other computational techniques.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
• /
• pp.218.2-218.2
• /
• 2013

In this study, CdS thin films were deposited onto glass substrates by radio frequency magnetron sputtering. The films were grown at various substrate temperatures in the range of 100 to $250^{\circ}C$. The effects of substrate temperatures on the structural and optical properties were examined. The XRD analysis revealed that CdS films were polycrystalline and retained the mixed structure of hexagonal wurtzite and cubic phase. The percentages of hexagonal structured crystallites in the films were seen to be increased by increasing substrate temperatures. The film grown at $250^{\circ}C$ showed a relatively high transmittance of 80% in the visible region, with an energy band gap of 2.45 eV. The transmittance date analysis indicated that the optical band gap was closely related to the substrate temperatures.

• 한국재료학회:학술대회논문집
• /
• 한국재료학회 2007년도 추계학술발표대회 및
• /
• pp.145.1-145.1
• /
• 2007

• 한국재료학회:학술대회논문집
• /
• 한국재료학회 2007년도 추계학술발표대회 및
• /
• pp.58.1-58.1
• /
• 2007