• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.124-125
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• 2007

Single crystal $CdGa_2Se_4$ layers were grown on a thoroughly etched semi-insulating GaAs(100) substrate at $420^{\circ}C$ with the hot wall epitaxy (HWE) system by evaporating the polycrystal source of $CdGa_2Se_4$ at $630^{\circ}C$ prepared from horizontal electric furnace. The photocurrent and the absorption spectra of $CdGa_2Se_4$/SI(Semi-Insulated) GaAs(100) are measured ranging from 293K to 10K. The temperature dependence of the energy band gap of the $CdGa_2Se_4$, obtained from the absorption spectra was well described by the Varshni's relation, $E_g$(T) = 2.6400 eV - $(7.721{\times}10^{-4}\;eV/K)T^2$/(T + 399 K). Using the photocurrent spectra and the Hopfield quasicubic model, the crystal field energy$({\Delta}cr)$ and the spin-orbit splitting energy$({\Delta}so)$ for the valence band of the $CdGa_2Se_4$ have been estimated to be 106.5 meV and 418.9 meV at 10 K, respectively. The three photocurrent peaks observed at 10 K are ascribed to the $A_{1^-},\;B_{1^-},\;and\;C_{11^-}$ exciton peaks.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.179-180
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• 2007

Single crystal $AgGaSe_2$ layers were grown on thoroughly etched semi-insulating GaAs(100) substrate at $420^{\circ}C$ with hot wall epitaxy (HWE) system by evaporating $AgGaSe_2$ source at $630^{\circ}C$. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of single crystal $AgGaSe_2$ thin films measured with Hall effect by van der Pauw method are $4.05{\times}\;10^{16}/cm^3$, $139\;cm^2/V{\cdot}s$ at 293 K. respectively. The temperature dependence of the energy band gap of the $AgGaSe_2$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)=1.9501\;eV\;-\;(8.79{\times}10^{-4}\;eV/K)T^2$/(T + 250 K). The crystal field and the spin-orbit splitting energies for the valence band of the $AgGaSe_2$ have been estimated to be 0.3132 eV and 0.3725 eV at 10 K, respectively, by means of the phcitocurrent spectra and the Hopfield quasicubic model. These results indicate that the splitting of the ${\Delta}So$ definitely exists in the $\Gamma_5$ states of the valence band of the $AgGaSe_2$. The three photocurrent peaks observed at 10 K are ascribed to the $A_1$-, $B_1$-, and $C_1$-exciton peaks for n = 1.

• Journal of the Korean Applied Science and Technology
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• v.26 no.2
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• pp.132-142
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• 2009

The benzophenone derivatives(4-$CH_3O$-4'-$NO_2$ and 3,4'-di-$NO_2$) are synthesized by the Fridel-Craft acylation and the nitration method. Electrochemical redox potentials of the benzophenone derivatives (4-$CH_3O$, H, 3-Cl, 3-$NO_2$, 4-$NO_2$, 4-$CH_3O$-4'-$NO_2$, 3,4'-di-$NO_2$) are measured by using cyclic voltammometry. In the relationship of summing Hammett value and redox potential, we find a proportional constant$(\rho)$ that shows a good relation with an electrochemical property and a reactivity of the benzophenone derivatives. The benzophenone substituted with the electron donating groups(4-$OCH_3$ and 4-$OCH_3-4'-NO_2$) are higher the energy in the LUMO level, then increasing a band-gap energy$(E_g)$, their $E_gs$ are obtained as a 3.94 eV and 3.59 eV, respectively.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.9
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• pp.760-765
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• 2011

Znic sulfide (ZnS) thin films were deposited on glass substrates by radio frequency magnetron sputtering. The substrate temperature varied from room temperature (RT) to $500^{\circ}C$. The structural and optical properties of ZnS films were studied by X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), energy dispersive analysis of X-ray (EDAX) and UV-visible transmission spectra. The XRD analyses reveal that ZnS films have cubic structures with (111) preferential orientation, whereas the diffraction patterns sharpen with the increase in substrate temperatures. The FESEM images indicate that ZnS films deposited at $400^{\circ}C$ have nano-sized grains with a grain size of ~ 67 nm. Then films exhibit relatively high transmittance of 80% in the visible region, with an energy band gap of 3.71 eV. One obvious result is that the energy band gap of the film increases with increasing the substrate temperatures.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.11a
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• pp.99-102
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• 2003

The electronic structure of ${\beta}-MnO_2$ having impurities in the site of Mn was theoretically investigated by $DV-X_{\alpha}$ (the discrete variation $X{\alpha}$) method, which is a sort of the first principle molecular orbital method using Hatre-Fock-Slater approximation. The used cluster model was $[Mn_{14}MO_{56}]^{-52}$ (M = transient metals). Madelung potential and spin polarization were considered for more exact calculations. As results of calculations, the energy levels of all electron included in the model were obtained. The energy band gap and positions of impurity levies were discussed in association with impurity 34 orbital that seriously affect electrical properties of $MnO_2$. It was shown that the energy band gap decreased with the increase of the atomic number of transient metal impurity.

• Korean Journal of Materials Research
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• v.32 no.5
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• pp.249-257
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• 2022

Transparent thin films of pure and nickel-doped ZrO₂ are grown successfully by sol-gel dip-coating technique. The structural and optical properties according to the different annealing temperatures (300 ℃, 400 ℃ and 500 ℃) are investigated. Analysis of crystallographic properties through X-ray diffraction pattern reveals an increase in crystallite size due to increase in crystallinity with temperature. All fabricated thin films are highly-oriented along (101) planes, which enhances the increase in nickel doping. Scanning electron microscopy and energy dispersive spectroscopy are employed to confirm the homogeneity in surface morphology as well as the doping configuration of films. The extinction coefficient is found to be on the order of 10^-2, showing the surface smoothness of deposited thin films. UV-visible spectroscopy reveals a decrease in the optical band gap with the increase in annealing temperature due to the increase in crystallite size. The variation in Urbach energy and defect density with doping and the change in annealing temperature are also studied.

• The Journal of the Korea institute of electronic communication sciences
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• v.12 no.5
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• pp.783-790
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• 2017

The energy band gaps and the bowing parameters of zincblende GaP1-xNx on the variation of temperature and composition are determined by using an empirical pseudopotential method with another virtual crystal approximation, which includes the disorder effect. The bowing parameter calculated is 13.1eV and the energy band gaps are decreased rapidly for GaP1-xNx ($0{\leq}x{\leq}0.05$, 300K). A refractive index n and a function of real dielectric constant ${\varepsilon}$ are calculated by the results of energy band gaps and the calculation results of energy band gaps are consistent with experimental values.

• The Journal of the Korea institute of electronic communication sciences
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• v.13 no.6
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• pp.1213-1222
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• 2018

The energy band gaps and the bowing parameters of zincblende $GaAs_{1-x}N_x$ on the variation of temperature and composition are determined by using an empirical pseudo-potential method with another virtual crystal approximation, which includes the disorder effect. The bowing parameter is calculated as 15eV and the energy band gaps are decreasing rapidly in $GaAs_{1-x}N_x$ ($0{\leq}x{\leq}0.05$, 300K). A refractive index n and a function of high-frequency dielectric constant ${\varepsilon}$ are calculated by the results of energy band gaps and the calculation results of energy band gaps are consistent with experimental values.

• Journal of the Korean Vacuum Society
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• v.1 no.2
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• pp.244-253
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• 1992

BiSI, BiSI : Co, BiSeI 및 BiSeI : Co 단결정을 고순도의 성분원소와 8.6mole% 과잉의 Iodine를 투명석영관내에 넣고 진공봉입하여 합성한 ingot를 사용하여 수직 Bridgman 방법으로 성장시켰다. 성장된 단결정은 orthorhombic 구조였고, energy band 구 조는 간접전이형으로 293K에서 광학적 energy gap은 각각 1.590eV, 1.412eV, 1.282eV 및 1.249eV로 주어지며, energy gap의 온도의존성은 Varshni 방정식으로 잘 표현된다. Cobalt 를 첨가할 때 나타나는 불순물 광흡수 peak는 Td symmetry점에 위치한 Co2+, Co3+ ion의 energy 준위들 사이의 전자전이에 의해서 나타난다.

• Nuclear Engineering and Technology
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• v.55 no.5
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• pp.1519-1526
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• 2023

For the first time Aluminium-BariumeZinc oxide nanocomposite (ZABONC) was synthesized by solution combustion method where calcination was carried out at low temperatures (600℃) to study the electromagnetic (EM) (X/γ) radiation shielding properties. Further for characterization purpose standard techniques like PXRD, SEM, UV-VISIBLE, FTIR were used to find phase purity, functional groups, surface morphology, and to do structural analysis and energy band gap determination. The PXRD pattern shows (hkl) planes corresponding to spinel cubic phase of ZnAl₂O4, cubic Ba(NO₃)₂, α and γ phase of Al₂O₃ which clearly confirms the formation of complex nano composite. From SEM histogram mean size of nano particles was calculated and is in the order of 17 nm. Wood and Tauc's relation direct energy band gap calculation gives energy gap of 2.9 eV. In addition, EM (X/γ) shielding properties were measured and compared with the theoretical ones using standard procedures (NaI (Tl) detector and multi channel analyzer MCA). For energy above 356 keV the measured shielding parameters agree well with the theory, while below this value slight deviation is observed, due to the influence of atomic/crystallite size of the ZABONC. Hence synthesized ZABONC can be used as a shielding material in EM (X/γ) radiation shielding.