• Proceedings of the Materials Research Society of Korea Conference
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• 2009.05a
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• pp.28.1-28.1
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• 2009

The superior properties of ZnO such as high exciton binding energy, high thermal and chemical stability, low growth temperature and possibility of wet etching process in ZnO have great interest for applications ranging from optoelectronics to chemical sensor. Particularly, vertically well-aligned ZnO nanorods on large areas with good optical and structural properties are of special interest for the fabrication of electronic and optical nanodevices. Currently, low-dimensional ZnO is synthesized by metal-organic chemical vapor deposition (MOCVD), molecular beam epitaxy (MBE), thermal evaporation, and sol.gel growth. Recently, our group has been reported about achievement the growth of Ga-doped ZnO nanorods using ZnO seed layer on p-type Si substrate by RF magnetron sputtering system at high rf power and high growth temperature. However, the crystallinity of nanorods deteriorates due to lattice mismatch between nanorods and Si substrate. Also, in the growth of oxide using sputtering, the oxygen flow ratio relative to argon gas flow is an important growth parameter and significantly affects the structural properties. In this study, Phosphorus (P) doped ZnO nanorods were grown on c-sapphire substrates without seed layer by radio frequency magnetron sputtering with various argon/oxygen gas ratios. The layer change films into nanorods with decreasing oxygen partial pressure. The diameter and length of vertically well-aligned on the c-sapphire substrate are in the range of 51-103 nm and about 725 nm, respectively. The photoluminescence spectra of the nanorods are dominated by intense near band-edge emission with weak deep-level emission.

• Journal of the Korean institute of surface engineering
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• v.53 no.1
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• pp.9-14
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• 2020

CuS (copper sulfide) thin films having the same thickness of 100nm were deposited on the glass substrates using by radio frequency (RF) magnetron sputtering method. RF powers were applied as a process variable for the growth of CuS thin films. The structural and optical properties of CuS thin films deposited under different power conditions (40-100W) were studied. XRD analysis revealed that all CuS thin films had hexagonal crystal structure with the preferential growth of (110) planes. As the sputtering power increased, the relative intensity of the peak with respect to the (110) planes decreased. The peaks of the two bands (264cm^-1 and 474cm^-1) indicated in the Raman spectrum exactly matched the typical spectral values of the covellite (CuS). The size and shape of the grains constituting the surface of the CuS thin films deposited under the power condition ranging from 40W to 80W hardly changed. However, the spacing between crystal grains tended to increase in proportion to the increase in sputtering power. The maximum transmittance of CuS thin films grown at 40W to 80W ranged from 50 % to 51 % based on 580nm wavelength, and showed a relatively small decrease of 48% at 100W. The band gap energy of the CuS thin films decreased from 2.62eV (at 40W) to 2.56eV (at 100W) as the sputtering power increased.

• Bulletin of the Korean Space Science Society
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• 2010.04a
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• pp.40.3-40.3
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• 2010

The most frequently suggested source for Pi2 pulsations in the inner magnetosphere (L < 4) is standing fast-mode waves trapped in the plasmasphere (i.e., plasmaspheric resonances). They have been considered as the source of low-latitude Pi2 pulsations. The plasmaspheric resonance model suggests that compressional fast-mode waves can be detected at all local times inside the plasmasphere provided reflection of the wave energy is efficient. Until now, however, there are no reports about compressional Pi2s observed in the dayside inner magnetosphere. That is, there is longitudinal limit of inner magnetosphere. In February 2008, THEMIS probes were near dawn and/or dusk sides, which are the transition regions between the nightside and dayside, in the inner magnetosphere (L = 2-4) when low-altitude Pi2s were identified at Bohyun (L = 1.35) station in Korea. Using the THEMIS electric field data, we examined if Pi2s are excited by longitudinally localized disturbances. We found that compressional Pi2s having high coherence with a low-latitude Pi2 pulsation occur on dawnside. However, any compressional pulsations in the Pi2 frequency band were not detected on duskside. This indicates that compressional Pi2s disappear near the duskside. Our observations are discussed with spatial plasmaspheric structure and possible Pi2 mechanisms.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.9
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• pp.546-551
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• 2016

$SrSnO_3:Tb^{3+}$ phosphor thin films were prepared on sapphire and quartz substrates in the growth temperature range of $100{\sim}400^{\circ}C$ by using the radio frequency magnetron sputtering deposition. The resulting $SrSnO_3:Tb^{3+}$ thin films were characterized by X-ray diffraction, scanning electron microscopy, ultraviolet-visible-infrared spectrophotometer, and photoluminescence spectrometer. The results indicated that the morphology, optical transmittance, band gap energy, and luminescence intensity of the phosphor thin films significantly depended on the growth temperature. All the thin films, regardless of the type of substrate, showed an amorphous behavior. As for the thin films deposited on sapphire substrate, the maximum crystallite size was obtained at a growth temperature of $400^{\circ}C$ and the strongest emission was green at 544 nm arising from the $^5D_4{\rightarrow}^7F_5$ transition of Tb3+. The average optical transmittance for all the thin films grown on sapphire and quartz substrates was decreased as the growth temperature increased from 100 to $400^{\circ}C$. The results suggest that the optimum growth temperatures for depositing highly-luminescent $SrSnO_3:Tb^{3+}$ phosphor thin films on sapphire and quartz substrates are 400 and $300^{\circ}C$, respectively.

• The Journal of the Acoustical Society of Korea
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• v.38 no.4
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• pp.433-441
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• 2019

In this paper, a method of estimating speech parameters for ultrasonic Doppler signals reflected from the articulatory muscles using LSTM (Long Short Term Memory) RNN (Recurrent Neural Networks) was introduced and compared with the method using MLP (Multi-Layer Perceptrons). LSTM RNN were used to estimate the Fourier transform coefficients of speech signals from the ultrasonic Doppler signals. The log energy value of the Mel frequency band and the Fourier transform coefficients, which were extracted respectively from the ultrasonic Doppler signal and the speech signal, were used as the input and reference for training LSTM RNN. The performance of LSTM RNN and MLP was evaluated and compared by experiments using test data, and the RMSE (Root Mean Squared Error) was used as a measure. The RMSE of each experiment was 0.5810 and 0.7380, respectively. The difference was about 0.1570, so that it confirmed that the performance of the method using the LSTM RNN was better.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.36 no.6
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• pp.582-587
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• 2023

The effects of the annealing temperature on the structural, morphological, and luminescent properties of SrWO₄:Sm³⁺ thin films grown on quartz substrates by radio-frequency magnetron sputtering were investigated. The thin films were annealed at various annealing temperatures for 20 min in a rapid thermal annealer after growing the thin films. The experimental results showed that the annealing temperature has a significant effect on the properties of the SrWO₄:Sm³⁺ thin films. The crystal structure of the as-grown SrWO₄:Sm³⁺ thin films was transformed from amorphous to crystalline after annealing at 800℃. The preferred orientation along (112) plane and a significant increase in average grain size by 820 nm were observed with increasing the annealing temperature. The average optical transmittance in the wavelength range of 500~1,100 nm was decreased from 72.0% at 800℃ to 44.2% at an annealing temperature of 1,000℃, where the highest value in the photoluminescence intensity was obtained. In addition to the red-shift of absorption edge, a higher annealing temperature caused the optical band gap energy of the SrWO₄:Sm³⁺ thin films to fall rapidly. These results suggest that the structural, morphological, and luminescent properties of SrWO₄:Sm³⁺ thin films can be controlled by varying annealing temperature.

• Journal of the Korean Chemical Society
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• v.24 no.5
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• pp.380-392
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• 1980

Six coordinate low spin iron(Ⅱ) complexes of vicinal-dioximes, [Fe$(DH)_2B_2$] and [Fe$(DH)_2$B(CO)]($(DH)_2$=$(CHDH)_2$(bis(1,2-cyclohexadinedioximato) bivalent anion), $(DPGH)_2$-(bis(diphenylglyoximato) bivalent anion), $(F{\alpha}DH)_2(bis(furil-{\alpha}-dioximato)$ bivalent anion); B = monodentate neutral nitrogen base), have been prepared and their physical properties have been investigated with respect to the effects of the equatorial ligands, $(DH)_2$. The order of ${\pi}$-acceptor CO stretching frequency for [Fe$(DH)_2$B(CO)] is $(F{\alpha}DH)_2$ > $(DPGH)_2$> $(CHDH)_2$, while non-${\pi}$-acceptor $NH_3$ stretching frequencies for [Fe$(DH)_2(NH_3)_2$] show the opposite order to that of CO, i.e., $(CHDH)_2$ > $(DPGH)_2$ > $(F{\alpha}DH)_2$. These infrared spectral data together with Fe-N (oxime) and Fe-N (oxime) and Fe-N (B) stretching frequency data suggest that the nitrogen atoms of $(CHDH)_2$ are more basic and poorer ${\pi}$-acceptors than the corresponding nitrogen atoms of $(DPGH)_2$ and $(F{\alpha}DH)_2$, respectively. It has been found from the electronic spectral data of [Fe$(DH)_2$] and [Fe$(DH)_2$B(CO)] that the energy of the charge transfer band from iron(Ⅱ) to $(DH)_2$ increases as the basicity of $(DH)_2$ increases.

• Journal of Korea Society of Industrial Information Systems
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• v.19 no.1
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• pp.13-18
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• 2014

Sensor nodes are used for monitoring and collecting the environmental data via wireless sensor network. The wireless sensor network with various sensor nodes draws attention as a key technology in ubiquitous computing. Sensor nodes has very small memory capacity and limited power resource. Thus, it is essential to have energy efficient strategy for the sensor nodes. Since the sensor nodes are operating on the same frequency bands with ISM frequency bands, the interference by the devices operating on the ISM band degrades the quality of communication integrity. In this paper, the convolutional code is proposed instead of ARQ for the error control for the sensor network. The proposed convolutional code was implemented and the BER performance is measured. For the fixed transmitting powers of -19.2 dBm and -25dBm, the BER with various communication distances are measured. The packet loss rate and the retransmission rate are calculated from the measured BER. It is shown that the porposed method obtained about 9~12% and 12-19% reduction in retransmission rate for -19.2 dBm and -25 dBm respectively.

• Geophysics and Geophysical Exploration
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• v.14 no.4
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• pp.289-297
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• 2011

Chirp sub-bottom profilers (SBP) data are comparatively higher-resolution data than other seismic data and it's raw signal can be used as a final section after conducting basic filtering. However, Chirp SBP signal has possibility to include various noise in high-frequency band and to provide the distorted image for the complex geological structure in time domain. This study aims at the goal to establish the workflow of Chirp SBP data processing for enhanced image and to analyze the proper parameters for the domestic continental shelf. After pre-processing, we include the dynamic S/N filtering to eliminate the high-frequency component noise, the dip scan stack to enhance the continuity of reflection events and finally the post-stack depth migration to correct the distorted structure on the time domain sections. We demonstrated our workflow on the data acquired by domestically widely used equipments and then we could obtain the improved seismic sections of depth domain. This workflow seems to provide the proper seismic section to interpretation when applied to data processing of Chirp SBP that are largely used for domestic acquisition.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.3 no.1
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• pp.18-25
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• 1978

The 1/f noise spectrum of short-circuited output drain current due to the Shockley-Read-Hal] recombination centers with a single lifetime in homogeneous nondegenerate MOS-field effcte transtors with n-type channel is calculated under the assumptions that the quasi-Fermi level for the carriers in each energy band can not be defined if we include the fluctuation for time varying quantities. and so 1/f noise is a majority carrier effect. Under these assumptions the derived 1/f noise in this paper show some essential features of the 1/f noise in MOS-field effect transistors. That is, it has no lowfrequency plateau and is proportionnal to the channel cross area A and to the driain bias voltage Vd and inversely proportional to the channel length L3 in MOS field effect transistors. This model can explain the discrepancy between the transition frequency of the noise spectrum from 1/f- response to 1/f2 and the frequency corresponding to the relaxation time related to the surface centers in p-n junction diodes. In this paper the results show that the functional form of noise spectrum is greatly influenced by the functional forms of the electron capture probability cn (E) and the relaxation time r (E) for scattering and the case of lattice scattering show to be responsible for the 4 noise in MOS fold effect transistors. So we canconclude that the source of 1/f noise is due to lattice scattering.