• Journal of the Institute of Electronics Engineers of Korea TC
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• v.41 no.2
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• pp.65-70
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• 2004

This paper presents a novel linearization scheme for a nonlinear RF amplifier It is based on the amplitude modulation with envelope signal. The 3rd order distortion generator is composed of two FETs and it adopts a balanced structure for the purpose of main carrier cancellation. The amplitude and phase of the IM3 component can be controlled at RF band. This predistorter is implemented and tested at the KOREA PCS Tx. band (1840∼1870MHz). Experimental results of two-tone test show that the IM3 cancellation is achieved about 30-40 ㏈ for the wide dynamic range. The adjacent channel power ratio is improved by over 10 ㏈ at the broad-band CDMA signal with a peak to average power ratio of l0㏈, and this improvement is maintained through a wide range of output power levels.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.46 no.12
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• pp.22-29
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• 2009

In this paper, we developed the 200-Watts SSPA(Solid State Power Amplifier) for the X-band pulse compression solid state radar. The developed X-band SSPA is consists of 3-stage CSA(Corporate Structured Amplifier) modules in pre-amplifier stage, driver-amplifier stage and main-power amplifier stage. The main-power amplifier stage of SSPA designed by balanced type using GaN HEMT with enough power and gain to generate power more than 200-Watts in X-band. The developed SSPA has performance with more than total gain 59dB and output power 200-Watts in condition of frequency range 9.2-9.6GHz, pulse period 1msec, pulse width 100usec and duty cycle 10%. The developed SSPA in this paper can apply to high quality solid state radar system with pulse compression technique.

• Journal of Korea Society of Industrial Information Systems
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• v.6 no.4
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• pp.48-53
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• 2001

A three-stage low noise amplifier(LNA) for the Base-station of the IMT-2000 is designed and implemented. In the first stage, a GaAs HJt-FET which has good noise characteristics is made use of. Monolithic microwave integrated circuits(MMICS) are used in the second and the third stage to achieve both the high gain and high output power. Although the balanced amplifier is used to reduce the input VSWR, it is done only in the first stage because we have to minimize the noise figure attributed to the phase difference of the balanced amplifier. It is shown that the implemented LNA has the gai over 39.74dB, the gain flatness less than ±0.4dB, the noise figure below 0.97dB, input and output VSWRs less than 1.2, and OIP₃(output third order intercept point) of 38.17dBm in the operating frequency range.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.17 no.5 s.108
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• pp.483-489
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• 2006

In this paper, new wideband lens amplifiers are proposed for C-band wireless communication service. In order to obtain the wideband property, all components of the proposed lens amplifiers are designed with balanced structure and wideband characteristics. Fat dipole antenna as the input and output antenna, balanced amplifier as amplifying components, and coplanar stripline(CPS) as the delay line fer the beam focusing are used fur composing the stable wideband lens amplifier. The $5{\times}5$ 2D lens amplifier has the characteristics that the absolute gain is 7.5 dB, the EIPG is 37.4 dB at 6 GHz, and the 3-dB gain bandwidth is 19.8 %.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.9 no.2
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• pp.262-267
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• 2005

During several method of improvement efficient, We analyzed Doherty Amplifier That used by simple circuit and 180w PEP LDMOS to analyze improvement of efficient and linearity. We for testing performance of Doherty Amplifier compared with Balanced Class AB, the experimental results show when Peaking Amp $V_gs.P$=1.53V, the efficiency is increased at Maximum 11.6$\%$. After finding optimum bias point of linearity improvement by manual tuning gate bias, when WCDMA 4FA $V_gs.P$=3.68V IMSR could be increased maximum 3.34dB. especially, when we match bias point of Peaking amp at 1.53V, we could get a excellent efficiency increase and have fUR under -3203c at output power 43dBm.

• Journal of Biomedical Engineering Research
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• v.20 no.2
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• pp.205-212
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• 1999

When we want to observe and record a patient's EEG in an operating room, the operation of electrosurgical unit(ESU) causes undesirable artifacts with high frequency and high voltage. These artifacts make the amplifiers of the conventional EEG system saturated and prevent the system from measuring the EEG signal. This paper describes a high-performance bipolar EEG amplifier for a CSA (compressed spectral array ) system with reduced ESU artifacts. The designed EEG amplifier uses a balanced filter to reduce the ESU artifacts, and isolates the power supply and the signal source of the preamplifier from the ground to cut off the current from the ESU to the amplifier ground. To cancel the common mode noise in high frequency, a high CMRR(common mode rejection ratio) diffferential amplifier is used. Since the developed bipolar EEG amplifier shows high gain, low noise, high CMRR, high input impedance, and low thermal drift, it is possible to observe and record more clean EEG signals in spite of ESU operation. Therefore the amplifier may be applicable to a high-fidelity CSA system.

• Journal of electromagnetic engineering and science
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• v.6 no.1
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• pp.18-23
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• 2006

In this paper, we demonstrate a fully integrated X-band image rejection down converter, which was developed using InGaP/GaAs HBT MMIC technology, consists of two single-balanced mixers, a differential buffer amplifier, a differential YCO, an LO quadratue generator, a three-stage polyphase filter, and a differential intermediate frequency(IF) amplifier. The X-band image rejection downconverter yields an image rejection ratio of over 25 dB, a conversion gain of over 2.5 dB, and an output-referred 1-dB compression power$(P_{1dB,OUT})$ of - 10 dBm. This downconverter achieves broadband image rejection characteristics over a frequency range of 1.1 GHz with a current consumption of 60 mA from a 3-V supply.

• Proceedings of the KAIS Fall Conference
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• 2010.11a
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• pp.172-175
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• 2010

본 논문에서는 GaN HEMT를 이용하여 Jamming용 System에 사용될 수 있는 고효율 및 고출력 특성을 가지는 광대역 Amplifier를 제작하였다. Jamming System에서 핵심이 되는 Amplifier는 넓은 범위의 주파수에서 통상적으로 사용되는 출력 신호에 비해 보다 높은 출력의 신호를 구현하는 것이 중요하다. 본 논문에서는 GaN HEMT에 안정적인 전원 공급을 위한 음 전원 Bias 제어 회로와 Sequence 회로 및 온도에 따른 Gain 보상 회로를 구현하였으며, 500~2500MHz의 광대역에서 동작하면서 50W 이상의 출력을 낼 수 있도록 설계하였다. 출력 전력이 향상과 안정적인 동작을 위해 Main 출력 단은 60Watt 급의 GaN HEMT 소자와 광대역 Coupler를 이용하여 Balanced Structure로 설계하였다. 제작된 광대역 Amplifier는 30V 단일 전원에서 동작하도록 설계되었고, 크기는 140*90mm이다. 동작주파수 대역(500~2500MHz)에서 Small Signal Gain 63dB와 Gain Flatness ${\pm}$2dB, -10dB 이하의 Input Return Loss를 가진다. CW(Continuous Wave) Signal을 이용하여 측정하였으며, 50Watt 이상의 Saturation Power에서 최대 45%, 최소 28% 정도의 효율 특성을 보였다.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.11 no.4
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• pp.599-609
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• 2000

In this paper, sub-harmonically pumped single balanced resistive mixers are presented . Frequency bandwidth is selected for a Ku-band, which is 11.75-12.25GHz for RF, 5.375∼5.625 GHz for LO, and 1 GHz for IF signals. A rat-race hybrid is designed for the accomplishment of single balanced type. A low pass filter (LPF) with photonic band gap(PBG) structure is used for good conversion loss and unwanted harmonics suppression. Two types of mixers are suggested, which are one with no gate bias for no DC power consumption and the other with the IF amplifier for conversion gain. When a LO signal with the power of 6 dBm at 5.5 GHz is injected, a conversion loss of 12.17dB and a conversion gain of 7.83 dB are obtained for each mixer. For the both mixers , LO to RF isolation of 20 dB and LO to IF isolation of 60dB are obtained. With the RF power of -30dBm to -3dBm, the mixer shows linear characteristics region of IF. this mixer can be applied for Ku-band and other microwave communication systems.

• International journal of advanced smart convergence
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• v.10 no.1
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• pp.12-23
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• 2021

This paper proposes a low power radio frequency receiver front-end where, in a single stage, single-balanced mixer and voltage-controlled oscillator are stacked on top of low noise amplifier and re-use the dc current to reduce the power consumption. In the proposed topology, the voltage-controlled oscillator itself plays the dual role of oscillator and mixer by exploiting a series inductor-capacitor network. Using a 65 nm complementary metal oxide semiconductor technology, the proposed radio frequency front-end is designed and simulated. Oscillating at around 2.4 GHz frequency band, the voltage-controlled oscillator of the proposed radio frequency front-end achieves the phase noise of -72 dBc/Hz, -93 dBc/Hz, and -113 dBc/Hz at 10KHz, 100KHz, and 1 MHz offset frequency, respectively. The simulated voltage conversion gain is about 25 dB. The double-side band noise figure is -14.2 dB, -8.8 dB, and -7.3 dB at 100 KHz, 1 MHz and 10 MHz offset. The radio frequency front-end consumes only 96 ㎼ dc power from a 1-V supply.