• Strategy21
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• s.41
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• pp.108-152
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• 2017

This paper aims to analyze hegemonic competition and the role of naval power. To this end the paper is composed of four chapters titled introduction, the role of naval power in the hegemonic competition, the role of naval power in the East Asia, and the lessons and implications for the Korean Peninsula. Since the modern era, the hegemonic competition in the East Asian region has been the intrusion and struggle process between the world system and the East Asian regional system, and the ocean between these two systems has become the goal and means of supremacy(hegemony). Currently, the hegemonic competition between the US and China consists of systemic competition at the global level and marine competition at the regional level. When South Korea is forced to make strategic choices in the course of the US-China hegemonic competition, naval power will be the first factor to be considered. The ROK is asymmetrically maintaining a deep dependency relationship with the United States in terms of security and China in relation to the economy. And while the ROK's national economic power is acquired from the ocean, the ROK's military power is imbalanced because it is centered on the ground forces. These international relations and asymmetric-unbalanced resources distribution will not be able to effectively cope with the hegemonic competition between the US and China in the future, and will limit Korea's strategic choice. Since naval power and forces are the prerequisites for the hegemonic competition or the maintenance of supremacy we must construct balanced naval forces(naval power) that are not subordinate to the ground forces at the national strategic level for the future of the country.

• JSTS:Journal of Semiconductor Technology and Science
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• v.9 no.4
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• pp.192-197
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• 2009

This paper presents the design and measurement of a 2.4/5.2-GHz dual band VCO with a balanced frequency doubler in $0.18\;{\mu}m$ CMOS process. The topology of a 2.4 GHz VCO is a cross-coupled VCO with a LC tank and the frequency of the VCO is doubled by a frequency balanced doubler for a 5.2 GHz VCO. The gate bias matching network for class B operation in the balanced doubler is adopted to obtain as much power at 2nd harmonic output as possible. The average output powers of the 2.4 GHz and 5.2 GHz VCOs are -12 dBm and -13 dBm, respectively, the doubled VCO has fundamental harmonic suppression of -25 dB. The measured phase noises at 5 MHz frequency offset are -123 dBc /Hz from 2.6 GHz and -118 dBc /Hz from 5.1 GHz. The total size of the dual band VCO is $1.0\;mm{\times}0.9\;mm$ including pads.

• Journal of information and communication convergence engineering
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• v.14 no.1
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• pp.35-39
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• 2016

In this paper, we develop a 94-GHz single balanced mixer with low conversion loss using planar Schottky diodes on a GaAs substrate. The GaAs Schottky diode has a nanoscale anode with a T-shaped disk that can yield high cutoff frequency characteristics. The fabricated Schottky diode with an anode diameter of 500 nm has a series resistance of 21 Ω, an ideality factor of 1.32, a junction capacitance of 8.03 fF, and a cutoff frequency of 944 GHz. Based on this technology, a 94-GHz single balanced mixer was constructed. The fabricated mixer shows an average conversion loss of -7.58 dB at an RF frequency of 92.5 GHz to 95 GHz and an IF frequency of 500 MHz with an LO power of 7 dBm. The RF-to-LO isolation characteristics were greater than -32 dB. These values are considered to be attributed to superior Schottky diode characteristics.

• Journal of electromagnetic engineering and science
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• v.4 no.4
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• pp.143-149
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• 2004

This paper describes characteristics of the single-balanced low IF resistive FET mixer for the digital beam forming(DBF) receiver. This DBF receiver based on the direct conversion method is designed with Low IF I and Q channel. A radio frequency(RF), a local oscillator(LO) and an intermediate frequency(IF) considered in this research are 1950 MHz, 1940 MHz and 10 MHz, respectively. Super low noise HJ FET of NE3210S01 is considered in design. The measured results of the proposed mixer are observed IF output power of -22.8 dBm without spurious signal at 10 MHz, conversion loss of -12.8 dB, isolation characteristics of -20 dB below, 1 dB gain compression point(PldB) of -3.9 dBm, input third order intercept point(IIP3) of 20 dBm, output third order intercept point(OIP3) of 4 dBm and dynamic range of 30 dBm. The proposed mixer has 1.0 dB higher IIP3 than previously published single-balanced resistive and GaAs FET mixers, and has 3.0 dB higher IIP3 and 4.3 dB higher PldB than CMOS mixers. This mixer was fabricated on 0.7874 mm thick microstrip $substrate(\varepsilon_r=2.5)$ and the total size is $123.1\;mm\times107.6\;mm$.

• The Journal of the Korea institute of electronic communication sciences
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• v.9 no.7
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• pp.761-766
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• 2014

This study performs the analytical investigation of the oscillation voltages at the tanks of the series tuned varactor incorporating balanced common-drain, and common-gate Colpitts VCO which are able to work even at the sub-1V power supply voltages. The results the investigation predicts is verified by the simulation on the circuit behaviors of the two VCOs. The analytical investigation finds that the series tuned varactor incorporating balanced common-gate VCO generates greater oscillation voltage at the tank than the series tuned varactor incorporating balanced common-drain VCO does, which in turn is more suitable for generating the low phase noise oscillation signal from the sub-1V supply voltage than the series tuned varactor incorporating balanced common-drain VCO.

• Journal of the Institute of Electronics and Information Engineers
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• v.53 no.1
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• pp.29-35
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• 2016

We have demonstrated a $Ti:LiNbO_3$ electro-optic electric-field sensors utilizing a $1{\times}2$ Y-fed balanced-bridge Mach-Zehnder interferometric (YBB-MZI) modulator which uses a 3-dB directional coupler at the output and dipole patch antenna. The operation and design were proved by the BPM simulation. A dc switching voltage of ~16.6 V and an extinction ratio of ~14.7 dB are observed at a wavelength of $1.3{\mu}m$. For a 20 dBm rf power, the minimum detectable electric-fields are ~1.12 V/m and ~3.3 V/m corresponding to a dynamic range of about ~22 dB and ~18 dB at frequencies 10 MHz and 50 MHz, respectively. The sensors exhibit almost linear response for the applied electric-field intensity from 0.29 V/m to 29.8 V/m.

• The Transactions of the Korean Institute of Power Electronics
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• v.14 no.2
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• pp.142-149
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• 2009

This paper investigates operating characteristics of three-phase matrix converter with unity input power factor by direct duty-ratio pulse-width modulation in the case of balanced and unbalanced load. It can be found from the system analysis that (1) The control algorithm for unity power factor is not related to the variables of load sides but the input voltages, (2) With the balanced three-phase load except for the pure reactive load, the unity input power factor can be achieved, (3) In the case of the unbalanced linear load, the equivalent input characteristics of the matrix converter can be seen like the nonlinear resister, (4) When the input frequency and the output frequency have the specific relationship, each input phases have the same sharing of the average power. The feasibility and validity of the analysis were verified by simulation and experimental results.

• The Journal of Korea Institute of Information, Electronics, and Communication Technology
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• v.10 no.1
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• pp.57-65
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• 2017

This paper presented a method of designing low-power feedback active noise control filter optimized for headphones/earphones. Using constrained optimization, we obtained a high order FIR noise control filter to ensure reasonable noise attenuation performance at high sampling frequency environment. Then using infinite impulse response (IIR) approximation method called Balanced Model Truncation (BMT), we obtained a low order IIR noise control filter suitable for low-power digital signal processing system like headphones/earphones. For further performance improvement, we utilized frequency warping method so that we could obtain more accurately approximated IIR filter and we ensured system stability by reconstructing the low order IIR filter in form of cascaded second order IIR filters. ANC simulation with white noise and stability test verified that the proposed algorithm had superior attenuation performance and better robustness compared to the conventional algorithm.

• Current Optics and Photonics
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• v.6 no.6
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• pp.521-549
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• 2022

Fiber lasers have made remarkable progress over the past three decades, and they now serve far-reaching applications and have even become indispensable in many technology sectors. As there is an insatiable appetite for improved performance, whether relating to enhanced spatio-temporal stability, spectral and noise characteristics, or ever-higher power and brightness, thermal management in these systems becomes increasingly critical. Active convective cooling, such as through flowing water, while highly effective, has its own set of drawbacks and limitations. To overcome them, other synergistic approaches are being adopted that mitigate the sources of heating at their roots, including the quantum defect, concentration quenching, and impurity absorption. Here, these optical methods for thermal management are briefly reviewed and discussed. Their main philosophy is to carefully select both the lasing and pumping wavelengths to moderate, and sometimes reverse, the amount of heat that is generated inside the laser gain medium. First, the sources of heating in fiber lasers are discussed and placed in the context of modern fiber fabrication methods. Next, common methods to measure the temperature of active fibers during laser operation are outlined. Approaches to reduce the quantum defect, including tandem-pumped and short-wavelength lasers, are then reviewed. Finally, newer approaches that annihilate phonons and actually cool the fiber laser below ambient, including radiation-balanced and excitation-balanced fiber lasers, are examined. These solutions, and others yet undetermined, especially the latter, may prove to be a driving force behind a next generation of ultra-high-power and/or ultra-stable laser systems.

• Journal of electromagnetic engineering and science
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• v.9 no.2
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• pp.98-104
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• 2009

An InGaP/GaAs MMIC LC VCO designed with Harmonic Noise Frequency Filtering(HNFF) technique is presented. In this VCO, internal inductance is found to lower the phase noise, based on an analytic understanding of phase noise. This VCO directly drives the on-chip double balanced mixer to convert RF carrier to IF frequency through local oscillator. Furthermore, final power performance is improved by output amplifier. This paper presents the design for a 1.721 GHz enhanced LC VCO, high power double balance mixer, and output amplifier that have been designed to optimize low phase noise and high output power. The presented asymmetric inductance tank(AIT) VCO exhibited a phase noise of -133.96 dBc/Hz at 1 MHz offset and a tuning range from 1.46 GHz to 1.721 GHz. In measurement, on-chip down-converter shows a third-order input intercept point(IIP3) of 12.55 dBm, a third-order output intercept point(OIP3) of 21.45 dBm, an RF return loss of -31 dB, and an IF return loss of -26 dB. The RF-IF isolation is -57 dB. Also, a conversion gain is 8.9 dB through output amplifier. The total on-chip down-converter is implanted in 2.56${\times}$1.07 mm$^2$ of chip area.