• Title/Summary/Keyword: Balanced Mixer

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Single-Balanced Low IF Resistive FET Mixer for the DBF Receiver

  • Ko Jee-Won;Min Kyeong-Sik
    • Journal of electromagnetic engineering and science
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    • v.4 no.4
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    • pp.143-149
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    • 2004
  • This paper describes characteristics of the single-balanced low IF resistive FET mixer for the digital beam forming(DBF) receiver. This DBF receiver based on the direct conversion method is designed with Low IF I and Q channel. A radio frequency(RF), a local oscillator(LO) and an intermediate frequency(IF) considered in this research are 1950 MHz, 1940 MHz and 10 MHz, respectively. Super low noise HJ FET of NE3210S01 is considered in design. The measured results of the proposed mixer are observed IF output power of -22.8 dBm without spurious signal at 10 MHz, conversion loss of -12.8 dB, isolation characteristics of -20 dB below, 1 dB gain compression point(PldB) of -3.9 dBm, input third order intercept point(IIP3) of 20 dBm, output third order intercept point(OIP3) of 4 dBm and dynamic range of 30 dBm. The proposed mixer has 1.0 dB higher IIP3 than previously published single-balanced resistive and GaAs FET mixers, and has 3.0 dB higher IIP3 and 4.3 dB higher PldB than CMOS mixers. This mixer was fabricated on 0.7874 mm thick microstrip $substrate(\varepsilon_r=2.5)$ and the total size is $123.1\;mm\times107.6\;mm$.

Adjustable-Performace, Single-Ended Input Double-Balanced Mixer

  • Choi, Jin-Yong;Lee, Kyung-Ho;Lee, Sang-Gug
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.1 no.4
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    • pp.248-252
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    • 2001
  • A noble single-ended input, double-balanced mixer topology is proposed. The mixer incorporates the common-source amplifier input stage with inductive degeneration for impedance matching. The analysis based on simulations shows that the overall performance of the mixer is excellent and is adjustable by varying the input transistor size to give best characteristics for the given linearity specifications.

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Design of a Single-Balanced Diode Mixer at 24GHz (24GHz대역 단일 평형 다이오드 주파수 혼합기의 설계 및 제작)

  • 강상록;박창현;김장구;조현식;한석균;최병하
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • 2003.10a
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    • pp.66-70
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    • 2003
  • In this paper a plannar singly balanced diode Miter for 24GHz band application is designed and implemented using a microstrip line and two schottky barrier beam lead mixer diodes. The implemented mixer have a conversion loss of 6 [dB], LO/RF isolation of 23 [dB], input 1dB compression point of 4 [dBm]. this diode mixer would be useful for homedyne radar.

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2 GHz Down Conversion MMIC Mixer using SiGe HBT Foundry (SiGe HBT 공정을 이용한 2 GHz Down Conversion MMIC Mixer 개발)

  • S.-M. Heo;J.-H. Joo;S.-Y. Ryu;J.-S. Choi;Y.-H. Nho;B.-S. Kim
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.13 no.8
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    • pp.764-768
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    • 2002
  • In this paper, a double balanced gilbert cell MMIC mixer was realized in Tachyonics SiGe HBT technology. The fabricated mixer has 17 dB conversion gain, 9.8 dB noise figure, -4.2 dBm output 1 dB compression point, -27 dBc RF to IF isolation, and the good input, output matching characteristics. It draws 10 mA from a 3 V supply. The simulation and the measured results are closer to each other, which confirms accuracy of the model library and reliability of the process.

Design of a 94-GHz Single Balanced Mixer Using Planar Schottky Diodes with a Nano-Dot Structure on a GaAs Substrate

  • Uhm, Won-Young;Ryu, Keun-Kwan;Kim, Sung-Chan
    • Journal of information and communication convergence engineering
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    • v.14 no.1
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    • pp.35-39
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    • 2016
  • In this paper, we develop a 94-GHz single balanced mixer with low conversion loss using planar Schottky diodes on a GaAs substrate. The GaAs Schottky diode has a nanoscale anode with a T-shaped disk that can yield high cutoff frequency characteristics. The fabricated Schottky diode with an anode diameter of 500 nm has a series resistance of 21 Ω, an ideality factor of 1.32, a junction capacitance of 8.03 fF, and a cutoff frequency of 944 GHz. Based on this technology, a 94-GHz single balanced mixer was constructed. The fabricated mixer shows an average conversion loss of -7.58 dB at an RF frequency of 92.5 GHz to 95 GHz and an IF frequency of 500 MHz with an LO power of 7 dBm. The RF-to-LO isolation characteristics were greater than -32 dB. These values are considered to be attributed to superior Schottky diode characteristics.

94-GHz Single Balanced Mixer (94 GHz Single-Balanced 믹서의 설계 및 제작에 관한 연구)

  • Hong, Seung-Hyun;Lee, Mun-Kyo;Lee, Sang-Jin;Baek, Tae-Jong;Han, Min;Baek, Young-Hyun;Choi, Seok-Gyu;Rhee, Jin-Koo
    • Proceedings of the IEEK Conference
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    • 2008.06a
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    • pp.411-412
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    • 2008
  • The high performance 94 GHz MMIC(Monolithic Micro-wave Integrated Circuit) single balanced mixer was designed and fabricated, using MHEMT structure based diodes and a CPW(Coplanar Waveguide) tandem coupler. A novel single-balanced structure of diode mixer is proposed in this work, where a 3-dB tandem coupler with two section of parallel-coupled line. Implemented air-bridge crossover structures achieve wide frequency operation and the fabricated mixer exhibits excellent LO-RF isolation, larger than 30 dB, in the 5 GHz bandwidth of 91-96 GHz. A good conversion loss of 7.4 dB is measured at 94 GHz. The proposed MHEMT-based diode mixer shows superior LO-RF isolation and conversion loss to those of the W-band mixers reported to date.

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Implement of Broadband Resistive Mixer for X-band FMCW Radar (X밴드 FMCW 레이더용 광대역 저항성 주파수 혼합기 구현)

  • Park, Dong-Kook;Han, Tae-Kyoung
    • Journal of Advanced Marine Engineering and Technology
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    • v.31 no.8
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    • pp.970-974
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    • 2007
  • A mixer is a key component in the wireless communication systems. In this paper, we design a mixer which is used in a frequency modulated continuous wave(FMCW) radar system. The frequency sweep range of the radar is from 10 GHz to 11 GHz. The transmitted and received signals of the FMCW radar are applied to LO and RF ports of the mixer, respectively, but the frequency difference between the two signals, which is called "a beat frequency" is under a few KHz and depending on the distance to target. Thus the isolation between the LO and RF ports is very important factor to design this mixer. In this paper we propose a single balanced resistive mixer using GaAs MESFET for this application. We first design a single-ended type resistive mixer using a simulation tool, then design a balanced type to increase the LO-to-RF isolation of the mixer. We fabricated the mixer on the substrate of dielectric constant 10 and thickness 0.635 mm. The measured results show that the isolation and conversion loss of the mixer over the frequency band is 20dB and 10.5dB, respectively. The LO input power for operating the proposed mixer is +3dBm, which is lower than a general conventional mixer's LO power. The 1 dB compression point is 6dBm.

Design and Fabrication of 40 ㎓ MMIC Double Balanced Star Mixer using Novel Balun (새로운 발룬 회로를 이용한 40 ㎓ 대역 MMIC 이중 평형 Star 혼합기의 설계 및 제작)

  • 김선숙;이종환;염경환
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.15 no.3
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    • pp.258-264
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    • 2004
  • In this paper, MMIC double balanced star mixer for 40 ㎓ was implemented on GaAs substrate with backside vias. In the design of the MMIC mixer, the design of balun and diode was required. A novel balun structure using microstrip to CPS was presented. The 40 ㎓ balun was designed based on the design experience of the scale-down balun by 2 ㎓. The balun may be suitable for fabrication in MMIC process with backside via and can easily be applied for DBM(Double Balanced Mixer). A Schottky diode was designed and implemented using p-HEMT process considering the compatability with other high frequency MMIC's fabricated on p-HEMT base process. Finally, the double balanced star mixer was fabricated using the balun and the p=HEMP Schottky diode. The measured performance of mixer shows 30 ㏈ conversion loss at 18 ㏈m LO power. This insufficient performance is caused by the unwanted diode at AlGaAs junction in vertical structure of p-HEMT. If the p-HEMT's gate is recessed to AlGaAs layer, and so the diode is eliminated, the mixer's performances will be improved.

Dual-Band Balanced Mixer using Nonlinear Phase Characteristic of CRLH Transmission Line (CRLH 전송선로의 비선형 위상 특성을 이용한 이중대역 평형 믹서)

  • Jung, Youn-Woo;Kim, Young;Yoon, Young-Chul
    • Journal of Advanced Navigation Technology
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    • v.15 no.1
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    • pp.97-103
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    • 2011
  • This paper presents a dual-band balanced mixer using nonlinear phase characteristic of composite right/left-handed (CRLH) transmission line. This metamaterial structure provides low LO leakage and high RF to LO isolation without additional filters for LO and RF path. The balanced mixer consists of balun and Wilkinson divider with dual-band characteristic of unit-cell which behaves like a CRLH metamaterial. Experimental results are used to verify the proposed metamaterial functions. The balanced mixer design results in an operating frequency of 870 MHz and 1660 MHz with an optimum mixer conversion loss of 15.2 dB at 870 MHz and 21.2 dB at 1660 MHz.

Design and Fabrication of 2 GHz Doubly Balanced Star Mixer using Novel Balun (새로운 발룬 회로를 이용한 2 GHz 대역 이중 평형 Star 혼합기의 설계 및 제작)

  • 김선숙;이종환;염경환
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.15 no.1
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    • pp.44-50
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    • 2004
  • In this paper, a DBM(Doubly Balanced Mixer) of 2 GHz is implemented on FR4 substrate. The structure of doubly balanced mixer requires, in general, two batons and a quad diode. For balun, a novel planar balun using microstrip to CPS is suggested and designed. The suggested balun shows the phase imbalance of 180$^{\circ}$${\pm}$ 1.5$^{\circ}$and the amplitude imbalance of ${\pm}$ 0.2 ㏈ for 1.5 to 2.5 GHz. Using the balun, DBM is succesfully implemented, and the measured conversion loss of up/down converter show about 6 ㏈ over the bandwidth. The balun may be applicable for MMIC DBM with the process supporting backside via thourgh more study.