• Title/Summary/Keyword: Baek Bong-gi

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생물반응기에서의 인삼모상근의 대량배양

  • Park, Don-Hui;Jeong, Gwi-Taek;Im, Won-Bong;Lee, Gi-Yeong;Hwang, Baek
    • 한국생물공학회:학술대회논문집
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    • 2000.11a
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    • pp.254-255
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    • 2000
  • 형질전환된 인삼 모상근의 여러 생물반응기에서의 대량배양 가능성을 알아보기 위하여 1/2 MS 배지를 기본배지(호르몬 무첨가, 3% sucrose)로 하여 실험을 수행하였다. 그 결과 플라스크 배양에 비하여 $2{\sim}3.5$배 높은 성장률을 보였으며, 그 성장이 왕성함을 알 수 있었다. 배양 후반기에 모상근의 뭉치 형성으로 물질전달의 어려움으로 인하여 성장에 장해를 미치는 것으로 사려된다.

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The wavelength shift of waveguide Bragg grating with its polymer overclad irradiated by UV-laser (UV-laser 조사에 따른 폴리머 상부 클래드 광도파로 브래그 격자의 파장 변화)

  • Park, Dong-Yeong;Choe, Gi-Seon;Yun, Jae-Sun;Baek, Se-Jong;Mun, Hyeong-Myeong;Kim, Jin-Bong;Kim, Gwang-Taek;Im, Gi-Geon
    • Proceedings of the Optical Society of Korea Conference
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    • 2007.02a
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    • pp.221-222
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    • 2007
  • The UV laser trimming can be useful to have an accurate performance specification of the passive waveguide devices. In order to measure the change of the refractive index of polymer overclad layer under the irradiation of uv light in a high precision Bragg grating is fabricated on the silica core of planar waveguide and the corresponding transmittance spectrum was analyzed. An effective refractive index change of $4.7x10^{-5}$ was obtained for a straight waveguide when its $60{\mu}m$-thick overclad was irradiated by UV laser pulses of its total fluence 24 $J/cm^2$.

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An Experimental Study on High Temperature Material Properties of Welded Joint (용접부의 고온 재료물성에 대한 실험적 연구)

  • Baek, Un-Bong;Yun, Gi-Bong;Seo, Chang-Min;Lee, Hae-Mu
    • Transactions of the Korean Society of Mechanical Engineers A
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    • v.24 no.12
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    • pp.3096-3103
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    • 2000
  • High temperature material properties of a welded joint were experimentally studied. Tensile and creep properties were measured for each part of weld metal. HAZ(heat affected zone) and parent metal at 538$^{\circ}C$. HAZ metal was obtained by a simulated heat treatment. Results showed that the order of tensile strength is weld>HAZ> parent both at 24$^{\circ}C$ and at 538$^{\circ}C$. Creep resistance was also the highest for weld metal and lowest for parent metal. Creep rupture life curves were obtained and converted to Monkman-Grant relation which is useful for life assessment. Use of the data obtained in this study is discussed.

C++ Class Restructuring Using the Neural Networks

  • Kim, Kwang-Baek;Jun, Bong-Gi;Kim, Young-Ju
    • Journal of information and communication convergence engineering
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    • v.1 no.3
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    • pp.99-103
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    • 2003
  • Classes are apt to include useless codes and inadequate inheritance relationship between them when they are being updated, inserted and deleted during the evolution process of object-oriented software, leading to lots of errors. Conventional class restructuring methods degrade the effectiveness of reusability since they go with preprocesses such as dependency analysis and estimation of class cohesion and run statically. In this paper, we propose a new C++ class-restructuring algorithm that does not require those preprocesses and runs dynamically by improving ART learning algorithm in the artificial neural networks.

Design and Implementation of the Recording Processing Supporting System using RFID

  • Baek, Mi-Hye;Kim, Bong-Gi;Kim, Hyun-Ju
    • Journal of information and communication convergence engineering
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    • v.9 no.6
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    • pp.629-632
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    • 2011
  • RFID technology is one of the verification technology that use radio frequency. Use and study of RFID are on the increase because RFID is a one of main technologies in ubiquitous. In this paper, we address to develop a Record Processing System using RFID. The purpose of this paper is improvement of accuracy and efficiency on Record Processing System by applying RFID. Later, this paper will be able to help to establish of u-Campus.

괴산군 일대의 식생 및 식생기반에 관한 연구

  • Min, Hyeon-Gi;Kim, Won-Tae;Park, Bong-Ju;Yun, Yong-Han;Baek, Min-Sang
    • Proceedings of the Korean Environmental Sciences Society Conference
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    • 2008.11a
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    • pp.557-558
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    • 2008
  • 본 연구는 괴산군을 대상으로 잠재식생군락과 군락별 식생기반을 평가하였다. 군락은 8개로 분류되었으며, 토양경도는 7.5mm$\sim$24.3mm, pH는 5.11$\sim$6.68, EC는 3.24dS/m$\sim$7.13 dS/m, 공극률은 16.90%$\sim$56.57%, 칼륨은 0.58cmol/kg$\sim$8.20cmol/kg, 칼슘은 0.12cmol/kg$\sim$1.21cmol/kg, 마그네슘은 0.05cmol/kg$\sim$1.07cmol/kg의 범위로 나타났다. 이러한 자연식생의 토양환경 데이터는 향후 중부지방 조경식재시 식생기반 조성에 기초자료로 활용될 수 있을 것이다.

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Record Processing System using the Attendance Information of RFID (RFID 출결 정보를 이용한 성적 처리 시스템)

  • Baek, Mi-Hye;Kim, Bong-Gi;Choo, Yeon-Gyu
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • 2011.05a
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    • pp.549-552
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    • 2011
  • RFID technology is one of the verification technology that use radio frequency. Use and study of RFID are on the increase because RFID is a one of main technologies in ubiquitous. In this paper, we address to develop a Record Processing System using RFID. The purpose of this paper is improvement of accuracy and efficiency on Record Processing System by applying RFID. Later, This paper will be able to help to establish of u-Campus.

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Antimony Surfactant Effect on p-GaN growth by Metal Organic Chemical Vapor Deposition (MOCVD)

  • Lee, Yeong-Gon;Sadasivam, Karthikeyan Giri;Baek, Gwang-Seon;Kim, Bong-Jun;Kim, Hak-Jun;Lee, Jun-Gi
    • Proceedings of the Materials Research Society of Korea Conference
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    • 2010.05a
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    • pp.56.2-56.2
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    • 2010
  • An improvement in the optical and structural properties of p-GaN was obtained by using antimony (Sb) as a surfactant during p-GaN growth. Two different growth temperatures of p-GaN such as $1030^{\circ}C$ and $900^{\circ}C$ were considered. Keeping the growth conditions for p-GaN constant, Sb was introduced during p-GaN growth while varying the [Sb]/([Ga]+[Mg]) flow ratio. [Sb]/([Ga]+[Mg]) flow ratio will be denoted as SGM ratio for convenience. SGM ratio of 0, 0.015 and 0.03% were considered for high temperature p-GaN growth. SGM ratio of 0, 0.005, 0.01 and 0.02% were considered for low temperature p-GaN growth. The analysis results suggest that using the optimum SGM ratio during p-GaN growth greatly improves the optical and structural properties of the p-GaN.

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