• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.16 no.3 s.94
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• pp.253-259
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• 2005

In this paper, BaSrTiO$_{3}$(BST) thin film tunable interdigital capacitor using low cost silicon substrate instead of expensive single-crystalline substrate is presented. The tunable capacitor in which BST thin film is deposited by PLD has operation frequency and applied bias up to 4 GHz and 50 V, respectively. The maximum tunability in capacitance is found to be 30$\%$, for an applied field of 5 kV/cm at a bias of 50 V. Therefore, it has been shown that the BST microwave tunable capacitor can be integrated onto Si substrate.

• Journal of the Korean Ceramic Society
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• v.40 no.4
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• pp.350-353
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• 2003

Millimeter-wave dielectric ceramics have been used like applications for ultrahigh speed wireless LAN because it reduces the resources of electromagnetic wave, and Intelligent Transport System (ITS) because of straight propagation wave. For millimeterwave, the dielectric ceramics with high quality factor (Q$.$f), low dielectric constant($\varepsilon$), and nearly zero temperature coefficient of resonant frequency ($\tau$) are needed. No microwave dielectric ceramics with these three properties exist except Ba(Mg$\_$1/3/Ta/sub1/3/)O$_3$ (BMT), which has a little high s: In this paper, alumina (Al$_2$O$_3$) and fosterite (Mg$_2$SiO$_4$), candidates for millimeter-wave applications, were studied with an objective to get high q$.$f and nearly zero $\tau$$\_$f/ For alumina ceramics, q$.$f more than 680,000 GHz was obtained but it was difficult to obtain nearly zero Qf. On the other hand, for forsterite ceramics, q$.$f was achieved from 10,000 GHz of commercial for sterite to 240,000 GHz of highly purified MgO and SiO$_2$ raw materials, and $\tau$$\_$f/ was reduced a few by adding TiO$_2$ with high positive $\tau$$\_$f/.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.319-319
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• 2013

Even though the fabrication methods of metal oxide based thin film capacitor have been well established such as RF sputtering, Sol-gel, metal organic chemical vapor deposition (MOCVD), ion beam assisted deposition (IBAD) and pulsed laser deposition (PLD), an applicable capacitor of printed circuit board (PCB) has not realized yet by these methods. Barium Strontium Titanate (BST) and other high-k ceramic oxides are important materials used in integrated passive devices, multi-chip modules (MCM), high-density interconnect, and chip-scale packaging. Thin film multi-layer technology is strongly demanded for having high capacitance (120 nF/$mm^2$). In this study, we suggest novel multi-layer thin film capacitor design and fabrication technology utilized by plasma assisted deposition and photolithography processes. Ba0.6Sr0.4TiO3 (BST) was used for the dielectric material since it has high dielectric constant and low dielectric loss. 5-layered BST and Pt thin films with multi-layer sandwich structures were formed on Pt/Ti/$SiO_2$/Si substrate by RF-magnetron sputtering and DC-sputtering. Pt electrodes and BST layers were patterned to reveal internal electrodes by photolithography. SiO2 passivation layer was deposited by plasma-enhanced chemical vapor deposition (PE-CVD). The passivation layer plays an important role to prevent short connection between the electrodes. It was patterned to create holes for the connection between internal electrodes and external electrodes by reactive-ion etching (RIE). External contact pads were formed by Pt electrodes. The microstructure and dielectric characteristics of the capacitors were investigated by scanning electron microscopy (SEM) and impedance analyzer, respectively. In conclusion, the 0402 sized thin film multi-layer capacitors have been demonstrated, which have capacitance of 10 nF. They are expected to be used for decoupling purpose and have been fabricated with high yield.

• KIEE International Transactions on Electrophysics and Applications
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• v.4C no.2
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• pp.64-67
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• 2004

In this paper, to discover the brightness improvement of ZnS:Cu powder electroluminescence (EL), a new structure is proposed in which phosphor and dielectric are mixed between electrodes. Dielectric and phosphor material are BaTiO$_3$ and ZnS:Cu, respectively. The effect of the mixed layer on EL sample is considered the improvement of source efficiency. Although the number of electrons introduced into the phosphor increases only modestly, the high electric field region of phosphor grains increases comparatively in the characteristics of brightness-voltage. Furthermore, the relaxation occurs through leading and trailing edge pairs, which is relatively efficient in characteristics of decay time. With these results, we found that the brightness of newly proposed ZnS:Cu powder electroluminescence was 167.24 cd/$m^2$ at ac voltage of 100V and frequency of 400Hz.

• Proceedings of the KIEE Conference
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• 1999.07d
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• pp.1526-1528
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• 1999

In this papaer, 7-segment was implemented using AC powder EL. ZnS:Cu and $BaTiO_3$ was used as a phosphor and dielectric respectively. The preparation of phosphor and dielectic layer was performed with screen printing. The implemented system of 7-segment was divided as following; EL display. driving circuit. software for driving. The properties of fabricated devices was measured with EL spectrum. brightness and J-V.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.182-182
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• 2009

The effect of Re-oxidation on the PTCR properties of Sm-doped barium titanate ceramics was investigated by means of impedance spectroscopy. Electrical properties such as resistance vs. temperature, I-V curve were measured and microstructure was observed with SEM photography. Sample was fabricated with thick film process such as tape casting of green sheet, screen printing of electrode pattern, stacking, firing in reduced atmosphere and re-oxidation, etc. As the temperature of re-oxidation increases, resistance jump as a function of temperature enhances but resistance at room temperature increases. These behavior of resistance as a function of temperature, dependent on the re-oxidation condition, is analyzed with Cole-Cole impedance plot and is shown to be related with the degree of oxidation of grain boundary regardless of grain core during re-oxidation process of sample.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.291-291
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• 2009

ZnS:Mn/Cu,Cl 계 나노 형광체의 특성을 살펴보았다. 실험에서는 ZnS:Mn 과 ZnS:Cu,Cl 형광체 파우더를 이용하여 밀링을 통하여 분쇄하여 EL 소자를 제작하였다. 형광체 파우더를 볼밀에 $\Phi5mm$의 지르코나이 볼과 에탄올과 함께 넣고 2, 4, 6, 8, 10일간 밀링을 하였다. 밀링한 형광체 파우더를 SEM을 통하여 파우더의 사이즈를 관찰하였다. 또 이 파우더를 이용하여 EL 소자를 제작하였다. 소자의 구조는 기판은 알루미나 기판을, 하부 전극은 Au, 유전체는 $BaTiO_3$ 유전체 페이스트를 사용하였으며, 형광체 적층 후 ITO 전극을 스퍼터를 이용하여 증착하여 제작하였다. 제작한 소자를 이용하여 소자의 휘도 등 발광 특성을 살펴보았다.

• Proceedings of the Korean Vacuum Society Conference
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• 2007.02a
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• pp.165-165
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• 2007

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.989-992
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• 2001

(Ba$\sub$0.6-x/Sr$\sub$0.4/Ca$\sub$x/)TiO$_3$(x=0.10, 0.15, 0.20) specimens were fabricated by the solid state reaction method and then the structural and dielectric properties as a function of the composition ratio and sintering temperature were studied. The BSCT(50/40/10) specimen sintered at 1500$^{\circ}C$ showed the highest average grain size(18.25 ${\mu}$m). The Curie temperature and dielectric constant at room temperature decreased with increasing Ca content. The dielectric constant and dielectric loss of the BSCT(50/40/10) specimen, sintered at 1450$^{\circ}C$, were about 4324 and 0.972% at 1KHz, respectively. Dielectric constant at room temperature decreased with increasing an applied field, tunability of the BSCT(50/40/10) sintered at 1300$^{\circ}C$ was 18%.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1989.06a
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• pp.63-65
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• 1989

Piezoelectric BaTiO$_3$-polymer composite were investigated for dielectric and piezoelectric properties with the barium titanate active particle size. Under the condition of the same density and ceramic volume ratio of composite, the dielectric and piezoelectric constant of composite are increasing as the ceramic particle size in composite are increasing. The surface layer model was quoted to explain these phenomena in our system and experimentally confirmed. The connectivity parameter of modified cube model of composite was calculated from the dielectric constant variation as their particle size. The connectivity parameter X and Y were 77.8% and 98.9% respectively. It means that the barium titanate particle distribution in composite nearly approach to the parallel mode. It was experimentally confirmed that the surface layer has low dielectric and nonferroelectric properties. Dielectric constant and thickness of surface layer were calculated from the equivalent circuit of composite.