• Transactions of the Korean Society of Mechanical Engineers
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• v.12 no.1
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• pp.152-162
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• 1988

In recent years, attention has been paid to the ceramic material next to metals and plastics due to its inherent characteristics, i.e., good hardness, resistance to heat and corrosion. Recently, various kinds of ceramic dielectrics have been developed for application in industry. It is of prime importance to know the thermophysical properties for wider use of these new materials. However, no extensive effort has been made for systematic measurement of the properties. In this paper, the dielectric constant of five different kinds of ceramic dielectrics ware measured. We call these samples as MgO.SiO$_{2}$, MgTiO$_{3}$, TiO$_{2}$, CaTiO$_{3}$, and BaTiO$_{3}$. Which are currently in commercial sue. The values of thermal dirrusivities, specific heats, and thermal conductivities of these ceramic dielectrics sere measured as a function of temperature ranging from room temperature to about 1300k.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.21-22
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• 2007

내환원성을 가지는 (Ca,Sr)(ZrTi)$O_3$계 C0G 원료와 코어 쉘 구조를 가지는 $BaTiO_3$계 X7R 원료를 적용하여 고압용 적층 칩 캐패시터를 제작하여 내부전극 형상 및 원료에 따른 신뢰성 밑 전기적 특성을 연구하였다. C0G 특성의 원료는 X7R 원료에 비해 단위 두께당 내전압이 감소하는 경향이 적었으며 내전압 특성도 우수하게 나타났다. 또한, 내부 전극 설계에 있어 floating에 따른 영향은 C0G, X7R 특성 원료 모두 향상된 전기적 특성과 신뢰성을 가짐을 확인 할 수 있었다.

• Electrical & Electronic Materials
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• v.6 no.4
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• pp.311-317
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• 1993

발열체 소자에 있어서 발열체의 방사스펙트럼과 피가열체의 흡수스펙트럼을 일치시키는 문제는 효과적인 가열을 위하여 매우 중요한 연구과제이다. 본 연구는 재료의 합성기술과 열처리기술을 이용하여 PTC 서머스터의 R-T특성은 그대로 유지시키면서 원적외선 방사특성을 증대시키기 위한 것이다. 이를 위하여 BaTiO$_{3}$+1.67Al$_{2}$O$_{3}$+3.75SiO$_{2}$+1.25TiO$_{2}$을 기본조성으로 하고 여기에 첨가제로서 Sb$_{2}$O$_{3}$와 MnO$_{2}$를 선정하여 이의 첨가량과 소결온도 그리고 소결온도구배를 파라메터로한 시편을 제작하였으며 각 시편의 IR특성과 R-T특성등을 측정 검토한 결과 파장 4.5-14.5[.mu.m]범위에서 방사율 0.8이상의 고효율 원적외선 방사특성을 얻었다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.157-157
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• 2009

$BaTiO_3$를 기본조성으로 하는 PTC 써미스터는 Curie 온도이상에서 저항이 급격히 상승하는 반도성 전자세라믹스로서 degaussing 소자, 정온 발열체, 온도센서, 전류 제한 소자 등 상업적으로 폭넓게 사용되고 있다. 본 소자는 소결온도, 소결 및 열처리 분위기, 불순물, 첨가제 등의 제조공정상의 인자들과 기공률, 결정립 크기 등이 복합적으로 작용하여 PTCR 특성이 크게 영향을 받기 때문에 제조하기에 무척 까다로운 소자로 알려져 있다. 특히 과전류 보호 소자용으로 사용하기 위해서는 상온 비저항을 크게 낮추어야 하며 이에 대한 연구가 계속 진행되고 있다. 따라서 본 연구에서는 SiO2을 0.5~10 at%로 달리한 조성으로 환원 분위기에서 소결하고 공기 중에서 재산화 처리하여 재료의 PTC 특성에 어떠한 영향을 미치는지 분석하였다. 소정의 조성을 선택하여 $1180^{\circ}C{\sim}1240^{\circ}C$에서 2시간 동안 환원분위기에서 소결하고, $800^{\circ}C$에서 1 시간 공기 중에서 재산화 처리한 후 R-T 특성을 측정하여 SiO2 함량에 따른 PTC 특성을 분석하였다. 그 결과 SiO2의 함량이 증가할수록 상온 저항은 낮아지다가 3.0 at% 이상으로 첨가할 경우 급격히 상승하는 경향을 나타내었다. 특히 SiO2를 1.0~3.0 at% 일 때 우수한 PTC 특성을 가졌다. $1180^{\circ}C$에서는 소결 밀도가 낮아 상온 비저항이 크게 높았지만, $1200^{\circ}C{\sim}1220^{\circ}C$에서는 정상 입성장이 나타나면서 일반적인 PTC 특성을 가졌지만, $1240^{\circ}C$ 이상에서는 공정 액상이 형성되어 비정상 입성장이 일어나 상온 비저항이 크게 낮아졌다. 한편 점핑비-log(Rmax/Rmin)는 SiO2 함량이 증가할수록 높아지다가 3.0 at% 이상에서는 낮아짐을 확인하였다.

• Proceedings of the Korea Institute of Applied Superconductivity and Cryogenics Conference
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• 2003.10a
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• pp.120-122
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• 2003

BaZrO$_3$and SrTiO$_3$(STO) thin films were Pulsed laser deposited on biaxially textured Ni and Ni-W alloy substrates to be used as single buffer layer for coated conductor. The texture of the films were analysed using the GADDS (general area detector diffraction system). Both films deposited on the metal tape were strongly (001) oriented, and in-plane textured (Δø (BZO) =9$^{\circ}$, Δø (STO) = 10$^{\circ}$).

• Journal of the Korean earth science society
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• v.27 no.1
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• pp.49-60
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• 2006

The purpose of this study is to investigate geochemical characteristics for stream sediments in the Naju area. We collected 139 stream sediments samples from primary channels. Samples were dried slowly in the laboratory and chemical analysis was carried out using XRF. ICP-AES and NAA. In order to investigate geochemical characteristics, the geological groups categorized into granitic gneiss area, schist area, granite area, arenaceous rock area, tuff area, andesite area, and rhyolite area. Average contents of major elements for geological groups are $SiO_2\;58.37{\sim}66.06wt.%,\;Al_2O_3\;13.98{\sim}18.41wt.%,\;Fe_2O_3\;4.09{\sim}6.10wt.%,\;CaO\;0.54{\sim}1.33wt.%,\;MgO\;0.86{\sim}1.34wt.%,\;K_2O\;2.38{\sim}4.01wt.%,\;Na_2O\;0.90{\sim}1.32wt.%,\;TiO_2\;0.82{\sim}1.03wt.%,\;MnO\;0.09{\sim}0.15wt.%,\;P_2O_5\;0.11{\sim}0.18wt.%$. According to the comparison of average contents of major elements, $Al_2O_3\;and\;K_2O$ are higher in granitic gneiss area, $Fe_2O_3,\;CaO,\;P_2O_5$ are higher in tuff area, MgO and $TiO_2$ are higher in andesite area, $Na_2O_$ is higher in rhyolite area, $SiO_2$, and MnO are higher in arenaceous rock area. Average contents of minor and rare earth elements for geological groups are $Ba\;1278{\sim}1469ppm,\;Be\;1.1{\sim}1.5ppm,\;Cu\;18{\sim}25ppm,\;Nb\;25{\sim}37ppm,\;Ni\;16{\sim}25ppm,\;Pb\;21{\sim}28ppm,\;Sr\;83{\sim}155ppm,\;V\;64{\sim}98ppm,\;Zr\;83{\sim}146ppm,\;Li\;32{\sim}45ppm,\;Co\;7.2{\sim}12.7ppm,\;Cr\;37{\sim}76ppm,\;Cs\;4.8{\sim}9.1ppm,\;Hf\;7.5{\sim}25ppm,\;Rb\;88{\sim}178ppm,\;Sc\;7.7{\sim}12.6ppm,\;Zn\;83{\sim}143ppm,\;Pa\;11.3{\sim}37ppm,\;Ce\;69{\sim}206ppm,\;Eu\;1.1{\sim}1.5ppm,\;Yb\;1.8{\sim}4.4ppm$. According to the comparison of average contents of minor and rare earth elements for geological groups, Pb, Li, Cs, Hf, Rb, Sb, Pa, Ce, Eu, and Yb are higher in granitic gneiss area; Ba, Co, and Cr in schist area; Nb, Ni, and Zr in arenaceous rock area; Sr in tuff area: and Be, Cu, V, Sc, and Zn are such in andesite area.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.38 no.5
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• pp.329-337
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• 2001

It has been known that the leakage current in the low field region consists of the dielectric relaxation current and intrinsic leakage current, which cause the charge loss in dynamic random access memory (DRAM) storage capacitor using (Ba,Sr)TiO$_{3}$ (BST) thin film. Especially, the dielectric relaxation current should be seriously considered since its magnitude is much larger than that of the intrinsic leakage current in giga-bit DRAM operation voltage (~IY). In this study, thermally stimulated current (TSC) measurement was at first applied to investigate the activation energy of traps and relative evaluation of the density of traps according to process change. And, through comparing TSC to early methods of I-V or I-t measurement and analyzing, we identify the origin of the dielectric relaxation current and investigate the reliability of TSC measurement. First, the polarization condition such as electric field, time, temperature and heating rate was investigated for reliable TSC measurement. From the TSC measurement, the energy level of traps in the BST thin film has been investigated and evaluated to be 0.20($\pm$0.01) eV and 0.45($\pm$0.02) eV. Based on the TSC measurement results before and after rapid thermal annealing (RTA) process, oxygen vacancy is concluded to be the origin of the traps. TSC characteristics with thermal annealing in the MIM BST capacitor have shown the same trends with the current-voltage (I-V) and current-time (I-t) characteristics. This means that the TSC measurement is one of the effective methods to characterize the traps in the BST thin film.

• Journal of the Korean Ceramic Society
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• v.41 no.10 s.269
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• pp.771-776
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• 2004

[ $Ba(Zr_{0.08}Ti_{0.92})O_3$ ] polycrystal was grown by floating zone technique with two ellipsoidal mirrors using the $8\%$of Zr-modified BZT ceramics as both a feed rod and a seed crystal. In order to study the annealing effect, a part of the grown crystal was sliced and annealed in the oxygen atmosphere at $1,200^{\circ}C$ for 10 h. The dielectric constant and loss at 10 kHz, 100 kHz, and 1 MHz were measured in the temperature range between $-100^{\circ}C$ and $150^{\circ}C$ to investigate the dielectric properties of the grown polycrystal. The electric-field dependence of the dielectric constant at 10 kHz and 100 kHz was studied by measuring the dielectric constants as a function of the biased-electric fields which ran from -15 kV/cm to 15 kV/cm. Due to the effect of annealing in the oxygen atmosphere, the electric-field tunability of dielectric constants increased from $47.5\%$ to 5 to and the figure of merit for this material from 39.6 to 46.4. Since the figure of merit can be increased to more than 46.4 by increasing the maximum value of the biased-electric fields to more than 15 V/cm, this material nay have a possibility for applications in microwave tuning devices at room temperature.

• Journal of Sensor Science and Technology
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• v.33 no.1
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• pp.34-39
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• 2024

Energy harvesting technology that converts the wasted energy resources into electrical energy is emerging as a semipermanent power source for self-powered electronics and wireless low-power sensor systems. Among the various energy conversion techniques, flexible piezoelectric energy harvesters (f-PEHs), using materials with piezoelectric effects, have attracted significant interest because they can harvest a small mechanical energy into electrical signals without constraints of time and space in various environments. In this study, we used a flexible piezoelectric composite film fabricated by dispersing BaHf_xTi_(1-x)O₃ (x = 0, 0.01, 0.05, 0.1) piezoelectric powders inside a polymeric matrix to facilitate f-PEHs. The fabricated f-PEH with optimal Hf contents (x = 0.05) generated a maximum output voltage of 0.95 V and current signal of 130 nA with stable electrical/mechanical disabilities under periodically bending deformations. In addition, we demonstrated a cantilever-type f-PEH and investigated its potential as a sensor by characterizing the output performance under mechanical vibrations at various frequencies. This study provides the breakthrough for realizing self-powered energy harvesting and sensing systems by adopting the lead-free piezoelectric composites under vibrational environments.

• Proceedings of the KIEE Conference
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• 2011.07a
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• pp.1471-1472
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• 2011

최근 경재적인 한계를 드러내고 있는 실리콘 태양전지의 대안으로 주목받고 있는 염료감응형 태양전지는 식물의 광합성 원리에 기초하여 빛이 입사하면 염료 분자가 포톤을 흡수해 여기하면서 전자를 방출함으로써 기전력을 발생시키는 원리로 동작한다. 염료에서 발생된 전자는 $TiO_2$의 conduction band로 주입되어 확산을 통해 TCO 기판으로 이동한다. 이때 다공성 나노구조의 $TiO_2$ 표면과 전해질의 접촉이 발생하게 되고 이로 인해 $TiO_2$ conduction band의 전자와 전해질의 $I_3{^-}$ 간의 재결합이 발생하게 되는데 이것은 DSC의 기능을 저하시키는 요인 중의 하나이다. 이러한 문제점은 $Al_2O_3$, ZnO, MgO, $BaTiO_2$ 등의 표면처리에 의한 core-shell 나노구조를 형성함으로써 해결할 수 있다. 본 연구에서는 aluminum isopropoxidee와 magnesium chloride 혼합 용액을 사용하여 core-shell 나노구조를 형성하여 셀을 제작하고, 완성된 셀의 출력특성과 내부 임피던스의 변화를 측정, 분석함으로써 단일 용액을 사용하였을 때에 비해 효과적인 재결합 감소와 광전압의 상승효과를 확인할 수 있었다.