• Proceedings of the KIEE Conference
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• 2006.10a
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• pp.3-4
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• 2006

${Li_2}{CO_3}$ and MgO doped paraelectric ${Ba_{0.5}}{Sr_{0.5}}{TiO_3}$, materials were prepared and compared for LTCC applications. In these days LTCC (Low Temperature Co-fired Ceramics) technology has been widely employed for electronic modules for the communication systems such as front-end modules, antenna modules, and switching modules. In this paper, 1 ${\sim}$ 5 wt % of ${Li_2}{CO_3}$, and 30 wt % of MgO were added to ${Ba_{0.5}}{Sr_{0.5}}{TiO_3}$, respectively. The crystalline properties and electrical properties will be compared and discussed.

• Korean Journal of Materials Research
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• v.4 no.4
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• pp.453-458
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• 1994

$(Ba_{0.5}Sr_{0.5)/TiO_3$(BST) thin films were prepared for the application of 256 Mb DRAM by RF magnetron sputtering. The crystallinity of BST thin films increased with increasing deposition tempera lure. The composition of thin films was $(Ba_{0.48}Sr_{0.48)/TiO_{2.93}$ Pt/Ti barrier layer suppressed the diffusion of Si into BST layer. The films showed a dielectric constant of 320 and a dissipation factor of 0.022 at 100 kHz. the change of capacitance of the films with applied voltage was small, showing paraelectric property. The charge storage density and leakage current density were 40fC/$\mu \textrm{m}^{2}$ and 0.8$\mu A/\textrm{cm}^2$, respectively at a field of 0.15 MV/cm. The BST films obtained by RF magnetron sputtering appeared to be potential thin film capacitors for 256 Mb DRAM application.

• Journal of the Korean Magnetics Society
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• v.9 no.1
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• pp.35-40
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• 1999

Sr substituted materials for some barium in M-type barium ferrite powder and Co-Ti substituted Sr-Ba hexagonal ferrite powder were prepared by citrate sol-gel method and 2 MOE sol-gel method these hexaferrite particles were reduced for 1hr in the hydrogen gas. The reduction temperatures were varied in the range of 250 $^{\circ}C$ to 500 $^{\circ}C$. X-ray diffraction patterns were measured using diffractometer with Cu $K_{\Alhpa}$ radiation. Mossbauer absorption spectra were measured with a constant acceleration spectrometer. We have focused on studying the origin of increasing $M_s$ by M$\"{o}$ssbauer spectroscopy. Ferrite particles which were sintered at 105$0^{\circ}C$ were found to be typical magnetoplumbite structure and single phase. XRD patterns with varying the reduction temperatures in $Sr_{0.5}Ba_{0.5}Fe_{10}O_{19}$ indicates ferrites particles become composite hexaferrites containing $\alpha$-Fe at T_{red}=350 \;$^{\circ}C$$. On the otherhand, it was found that $Co^{2+}$ ions and $Ti^{4+}$ ions in $Sr_{0.7}Ba_{0.3}Fe_{10}CoTiO_{19}$ prevent from changing $Fe^{3+}$ ions to $\alpha$-Fe during the $H_2$ reduction. Comparing Mossbauer results with XRD results, we have determined most of $\alpha$-Fe are reduced from $4f_{vi}$ sites and 12k sites of $Fe^{3+}$ ions. These $\alpha$-Fe phase bring the induced anisotropy and increase saturation magnetization $M_s$.TEX>.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.8
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• pp.680-684
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• 2007

In this study, we investigated the effects of structural and electrical properties of $(Ba_{0.6},\;Sr_{0.3},\;Ca_{0.1})TiO_3$ thick films with variation $Dy_2O_3$ contents. $(Ba_{0.6},\;Sr_{0.3},\;Ca_{0.1})TiO_3$ powders, prepared by the sol-gel method, were mixed organic vehicle. The BSCT thick films doped with 0.1, 0.3, 0.5, 0.7 mol% $Dy_2O_3$ were fabricated by the screen-printing techniques on the alumina substrates and the structural and dielectric properties were investigated with variation of $Dy_2O_3$ doping contents. All BSCT thick films were sintered at $1420^{\circ}C$, for 2hr. In the TG-DTA analysis, the formation of the polycrystalline perovskite phase was observed at around $670 ^{\circ}C$. In the XRD analysis, all BSCT thick films showed the cubic perovskite structure. The average thickness of BSCT thick films was approximately $65{\mu}m$. The Curie temperature decreased with increasing $Dy_2O_3$ amount. The relative dielectric constant and dielectric loss of BSCT thick films doped with $Dy_2O_3$ 0.1 mol% were 6267 and 2.6 %, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.05b
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• pp.16-19
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• 2002

(Ba,Sr)TiO3(BST) thin film is an attractive material for the application in high-density dynamic random access memories (DRAMs) because of the high relative dielectric constant and small variation in dielectric properties with frequency. In this study, (Ba0.6,Sr0.4)TiO3 thin films on Pt/Ti/SiO2/Si substrates were deposited by a sol-gel method and the CF4/Ar inductively coupled plasma (ICP) etching behavior of BST thin films had been investigatedby varying the process parameters such as chamber pressure, ICP power, and substrate bias voltage. To analysis the composition of surface residue following etching BST films etched with different Ar/CF4 gas mixing ratio were investigated using x-ray photoelectron spectroscopy (XPS) and secondary ion mass spectrometer (SIMS).

• Proceedings of the KIEE Conference
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• 1998.11c
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• pp.740-742
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• 1998

In this paper, we described the effect of rapid thermal annealing on the electrical properties of interfacial layer between various top electrodes and $(Ba_{0.5}Sr_{0.5})TiO_3$ thin films. BST thin films were fabricated on Pt/TiN/$SiO_2$/Si substrate by RF magnetron sputtering technique. AI, Ag, and Cu films for the formation of top electrode were deposited on BST thin films by thermal evaporator. Top electrodes/BST/Pt capacitor annealed with rapid thermal annealing at various temperature. In $(Ba_{0.5}Sr_{0.5})TiO_3$ thin films with Cu top electrode annealed at $500^{\circ}C$, the dielectric constant was measured to the value of 366 at 1.2 [kHz] and the leakage current was obtained to the value of $5.85{\times}10^{-7}\;[A/cm^2}$ at the forward bias of 2 [V].

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.04b
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• pp.18-21
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• 2004

An alkoxide-based sol-gel method was used to fabricate $Ba_{0.6}Sr_{0.4}TiO_3$ thin films doped by Bi from 5 to 20 mol% on a $Pt/Ti/SiO_2/Si$ substrate. The structural and dielectric properties of BST thin films were investigated as a function of Bi dopant concentration. The dielectric properties of the Bi doped BST films were strongly dependent on the Bi contents. The dielectric constant and dielectric loss of the films decreased with increasing Bi content. However, the leakage current density of the 10 mol% Bi doped $Ba_{0.6}Sr_{0.4}TiO_3$ thin film showed the lowest value of $5.13{\times}10^{-7}\;A/cm^2$ at 5 V. The figure of merit (FOM) reached a maximum value of 32.42 at a 10 mol% Bi doped $Ba_{0.6}Sr_{0.4}TiO_3$ thin films. The dielectric constant, loss factor, and tunability of the 10 mol% Bi doped $Ba_{0.6}Sr_{0.4}TiO_3$ thin films were 333, 0.0095, and 31.1%, respectively.

• Proceedings of the Korean Ceranic Society Conference
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• 2002.10a
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• pp.33.2-33
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• 2002

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1993.11a
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• pp.17-20
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• 1993

In this paper, the (1-x)($Sr_{0.50}$$Pb_{0.25}$$Ba_{0.25}$)$TiO_3$-x $Bi_2$$Ti_3$$O_{9}$(x=0,4,6,8[mol.%]) ceramics with paraelectric properties were, fabricated by mixed oxide method. The dielectric and structural properties of ceramics were studied with sintering temperature and addition of $Bi_2Ti_3O_{9}$, and the application for the high - voltage capacitor was investigated. In the specimens with sintering at 1350[$^{\circ}C$], sintered density was showed the highest value of 5.745[g/cm$^3$]. Increasing of sintering temperature, average grain size was increased. The specimen. ($Sr_{0.50}$$Pb_{0.25}$$Ba_{0.25}$)$TiO_3$sintered at 1350[$^{\circ}C$] showed good dielectric properties and breakdown voltage was showed the highest value of 200[kV]. Temperature coefficient of capacitance was stabilized in specimens added $Bi_2Ti_3O_{9}$ Sintered density. dielectric properties and breakdown voltage ware decreased with increasing the contents of $Bi_2Ti_3O_{9}$.

• Korean Journal of Materials Research
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• v.5 no.2
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• pp.151-156
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• 1995

Low temperature firing $(Ba, Sr)TiO_{3}$ dielectrics were successfully prepared with lead based glass and those electrical properties were investigated. Different amount of PbO content glass materials were added to dielectrics to investigate the sinterability and its dielectric properties. Also, various compositions of ceramic capacitors were prepared to applicate in multilayer ceramic capacitors. A large amount of experiment has been done with various Pb contented glasses and different sintering temperatures. The sintering temperature of $(Ba,Sr)TiO_{3}$can be reduced from $1350^{\circ}C$to as low as $1050^{\circ}C$ with 4wt% addition of $PbO-ZnO-B_{2}O_{2}$ glass materials. Its dielectric constant at room temperature was up to 8100 with low dielectric loss, 0.005. This ceramic capacitor showed fully fired microstructures with its grain size of 1-3$\mu \textrm{m}$. The sintered body which was sintered at $1150^{\circ}C$ for 2hr with 4wt% $PbO-ZnO-B_{2}O_{2}$ glass material addition satisfied the Z5U specification of the EIAS.