• Title/Summary/Keyword: Ba doping

Search Result 119, Processing Time 0.025 seconds

Advances in High Emission Sc2O3-W Matrix Cathode Materials

  • Wang, Jinshu;Yang, Yunfei;Liu, Wei;Wang, Yiman
    • Applied Microscopy
    • /
    • v.46 no.1
    • /
    • pp.20-26
    • /
    • 2016
  • Our work on $Sc_2O_3-W$ matrix dispenser cathodes had been reviewed in this paper. The cathode with uniform distribution of $Sc_2O_3$ had been obtained using liquid-liquid doping method. The cathode had excellent emission property, i.e., the emission current density in pulse condition could reach over $35A/cm^2$. It was found that the cathode surface was covered by a Ba-Sc-O active substance multilayer with a thickness of about 100 nm, which was different from the monolayer and semiconducting layer in thickness. Furthermore, the observation results displayed that nanoparticles appeared at the growth steps and the surface of tungsten grains of the fully activated cathode. The calculation result indicated that the nanoparticles could cause the increase of local electric field strengths. We proposed the emission model that both the Ba-Sc-O multilayer and the nanoparticles distributing mainly on the growth steps of the W grains contributed to the emission. The future work on this cathode has been discussed.

Grain Growth Behavior of (K0.5Na0.5)NbO3 Ceramics Doped with Alkaline Earth Metal Ions

  • Il-Ryeol Yoo;Seong-Hui Choi;Kyung-Hoon Cho
    • Korean Journal of Materials Research
    • /
    • v.33 no.4
    • /
    • pp.135-141
    • /
    • 2023
  • The volatilization of alkali ions in (K,Na)NbO3 (KNN) ceramics was inhibited by doping them with alkaline earth metal ions. In addition, the grain growth behavior changed significantly as the sintering duration (ts) increased. At 1,100 ℃, the volatilization of alkali ions in KNN ceramics was more suppressed when doped with alkaline earth metal ions with smaller ionic size. A Ca2+-doped KNN specimen with the least alkali ion volatilization exhibited a microstructure in which grain growth was completely suppressed, even under long-term sintering for ts = 30 h. The grain growth in Sr2+-doped and Ba2+-doped KNN specimens was suppressed until ts = 10 h. However, at ts = 30 h, a heterogeneous microstructure with abnormal grains and small-sized matrix grains was observed. The size and number of abnormal grains and size distribution of matrix grains were considerably different between the Sr2+-doped and Ba2+-doped specimens. This microstructural diversity in KNN ceramics could be explained in terms of the crystal growth driving force required for two-dimensional nucleation, which was directly related to the number of vacancies in the material.

Magnetic and Microwave Absorbing Properties of M-type Hexagonal Ferrites Substituted by Ru-Co(BaFe12-2xRuxCoxO19) (Ru-Co가 치환된 M-형 육방정 페라이트(BaFe12-2xRuxCoxO19)의 자기적 성질 및 전파흡수 특성)

  • Cho, Han-Shin;Kim, Sung-Soo
    • Journal of the Korean Magnetics Society
    • /
    • v.18 no.4
    • /
    • pp.136-141
    • /
    • 2008
  • In this study, the magnetic(static and high-frequency) and microwave absorbing properties have been investigated in Ru-Co substituted M-hexaferrites($BaFe_{12-2x}Ru_xCo_xO_{19}$). The powders and sintered specimens were prepared by conventional ceramic processing technique. With the calcined powders, the composite specimens were prepared using the silicone rubber as a matrix material. The substitution ratio of Ru-Co to obtain in-plane magnetic anisotropy, thus having the minimum coercivity, is much smaller (about x=0.3) than the previously reported Ti-Co substituted specimen. Owing to this low substitution, the specimen has a large value of saturation magnetization($M_s$=65 emu/g). Ferromagnetic resonance behavior and microwave absorbing frequency band is strongly influnced by the coercvity which can be controlled by Ru-Co substitution ratio. It is found that the M-hexaferrites with planar magnetic anisotropy by doping Ru-Co in both sintered and composite form have superior microwave absorbing properties in GHz frequency range.

Alteration of Physical Properties of Nanoparticle Embedded liquid Crystal Causing the Enhancement of the Performance of LCDs

  • Kobayashi, Shunsuke;Kineri, Tohru;Takatoh, Kohki;Akimoto, Mitsuhiro;Hoshi, Hajime;Nishida, Naoto;Toshima, Naoki;Sano, Satoru
    • 한국정보디스플레이학회:학술대회논문집
    • /
    • 2008.10a
    • /
    • pp.1473-1476
    • /
    • 2008
  • Doping the nanoparticles of Pd, p-$BaTiO_3$, $SiO_2$ and MgO into LCs alters their physical properties such as $K_{ii}$, $\Delta\varepsilon$, ${\Delta}n$, $\gamma_1$ and $T_{NI}$. Except for $K_{33}$, all these parameters decreases and thus bring the reduction of operating voltage and/or response times.

  • PDF

Enhancement and optimization of gamma radiation shielding by doped nano HgO into nanoscale bentonite

  • Allam, Elhassan A.;El-Sharkawy, Rehab M.;El-Taher, Atef;Shaaban, E.R.;RedaElsaman, RedaElsaman;Massoud, E. El Sayed;Mahmoud, Mohamed E.
    • Nuclear Engineering and Technology
    • /
    • v.54 no.6
    • /
    • pp.2253-2261
    • /
    • 2022
  • In this study, nano-scaled shielding materials were assembled and fabricated by doping different weight percentages of Nano-mercuric oxide (N-HgO) into Nano-Bentonite (N-Bent) based on using (100-x% N-Bent + x% N-HgO, x = 10, 20, 30, and 40 wt %). The fabricated N-HgO/N-Bent nanocomposites were characterized by FT-IR, XRD, and SEM and evaluated to evaluate their shielding properties toward gamma radiation by using four different γ-ray energies form three point sources; 356 keV from 133Ba, 662 keV from 137Cs as well as 1173, and 1332 keV from 60Co. The γ-rays mass attenuation coefficients were plotted as a function of the doped N-HgO concentrations into N-HgO/N-Bent nanocomposites. The computed values of mass attenuation coefficients (µm), effective atomic number (Zeff) and electron density (Nel) by the as-prepared samples were found to increase, while the half value layer (HVL) and mean free path (MFP) were identified to decrease upon increasing the N-HgO contents. It was concluded also that the increase in N-HgO concentration led to a direct increase in the mass attenuation coefficient from 0.10 to 0.17 cm2/g at 356 keV and from 0.08 to 0.09 cm2/g at 662 keV. However, a slight increase was observed in the identified mass attenuation coefficients at (1172 and 1332 keV).

A Fundamental Study of Eu2+ Luminescence in Aluminum Borate Compounds (Aluminum Borate 화합물에 있어서 EU2+이온의 발광성)

  • Chang, Ki-Seog
    • Journal of the Korean Chemical Society
    • /
    • v.44 no.4
    • /
    • pp.350-355
    • /
    • 2000
  • The compounds, CaAl$_2$(BO$_3$)$_2$O, SrAl$_2$(BO$_3$)$_2$O and BaAl$_2$(BO$_3$)$_2$O, are good host lattices for highly efficient $Eu^{2+}$ luminescence. The europium emission peaks at 450 nm in $Eu^{2+}$:CaAl$_2$(B0$_3$)$_2$O, 411 nm in $Eu^{2+}$: SrAl$_2$(BO$_3$)$_2$O and 375 nm in $Eu^{2+}$: BaAl$_2$(BO$_3$)$_2$O. The $Eu^{2+}$: CaAl$_2$(BO$_3$)$_2$O Phosphor shows a high output and should be a good maintenance in VUV Xe lamps. It is ideally suited for use in PDP phosphors. The $Eu^{2+}$ ion is interesting because the Stokes shift emission is a strong host dependent. The difference in the Stokes shift is oneimportant factor leadingto a difference in wavelength. If the 5d level of $Eu^{2+}$ ion is lower in energy,according to a decrease in the doping lattice size, then the emission wavelength will be longer and the Stokes shift will be smaller. Therefore, a knowledge of the relationship between the crystal lattice size and the Stokes shift. (orthe energy of the 5d level),is essential for beingable to predict $Eu^{2+}$ emission properties.

  • PDF

Electrical and Magnetic Properties in [La0.7(Ca1-xSrx)0.3MnO3)]0.99/(BaTiO3)0.01 Composites

  • Kim, Geun-Woo;Bian, Jin-Long;Seo, Yong-Jun;Koo, Bon-Heun
    • Korean Journal of Materials Research
    • /
    • v.21 no.4
    • /
    • pp.216-219
    • /
    • 2011
  • Perovskite manganites such as $RE_{1-x}A_xMnO_3$ (RE = rare earth, A = Ca, Sr, Ba) have been the subject of intense research in the last few years, ever since the discovery that these systems demonstrate colossal magnetoresistance (CMR). The CMR is usually explained with the double-exchange (DE) mechanism, and CMR materials have potential applications for magnetic switching, recording devices, and more. However, the intrinsic CMR effect is usually found under the conditions of a magnetic field of several Teslas and a narrow temperature range near the Curie temperature ($T_c$). This magnetic field and temperature range make practical applications impossible. Recently, another type of MR, called the low-field magnetoresistance(LFMR), has also been a research focus. This MR is typically found in polycrystalline half-metallic ferromagnets, and is associated with the spin-dependent charge transport across grain boundaries. Composites with compositions $La_{0.7}(Ca_{1-x}Sr_x)_{0.3}MnO_3)]_{0.99}/(BaTiO_3)_{0.01}$ $[(LCSMO)_{0.99}/(BTO)_{0.01}]$were prepared with different Sr doping levels x by a standard ceramic technique, and their electrical transport and magnetoresistance (MR) properties were investigated. The structure and morphology of the composites were studied by X-ray diffraction (XRD) and scanning electronic microscopy (SEM). BTO peaks could not be found in the XRD pattern because the amount of BTO in the composites was too small. As the content of x decreased, the crystal structure changed from orthorhombic to rhombohedral. This change can be explained by the fact that the crystal structure of pure LCMO is orthorhombic and the crystal structure of pure LSMO is rhombohedral. The SEM results indicate that LCSMO and BTO coexist in the composites and BTO mostly segregates at the grain boundaries of LCSMO, which are in accordance with the results of the magnetic measurements. The resistivity of all the composites was measured in the range of 90-400K at 0T, 0.5T magnetic field. The result indicates that the MR of the composites increases systematically as the Ca concentration increases, although the transition temperature $T_c$ shifts to a lower range.

Enhancement of PTCR Characteristics of MnO2 Doped Lead Free BaTiO3-(Bi0.5Na0.5)TiO3 Ceramics with High Tc (>165℃) (MnO2가 도핑된 무연 High Tc (>165℃) BaTiO3-(Bi0.5Na0.5)TiO3 세라믹의 PTCR 특성 향상)

  • Kim, Kyoung-Bum;Jang, Young-Ho;Kim, Chang-Il;Jeong, Young-Hun;Lee, Young-Jin;Paik, Jong-Hoo;Lee, Woo-Young;Kim, Dae-Joon
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
    • /
    • v.24 no.9
    • /
    • pp.723-727
    • /
    • 2011
  • 0.935Ba$TiO_3$-0.065($Bi_{0.5}Na_{0.5}$)$TiO_3+xmol%MnO_2$ (BBNTM-x) ceramics with $0{\leq}x{\leq}0.05$ were fabricated with muffled sintering by a modified synthesis process. Their microstructure and enhanced positive temperature coefficient of resistivity (PTCR) characteristics were systematically investigated in order to obtain lead-free high TC PTCR thermistors. All specimens showed a perovskite structure with a tetragonal symmetry and no secondary phase was observed. Grain growth was achieved when the doped MnO2 was increased above 0.02 mol%. This is due to the effect of positive Mn ion doping as an acceptor compensating a Ba vacancy occurred by the higher donor dopant concentration of $Bi^{3+}$ ion. Especially, enhanced PTCR characteristics of the extremely low ${\rho}_{RT}$ of $9\;{\Omega}{\cdot}cm$, PTCR jump of $5.1{\times}10^3$, ${\alpha}$ of 15.5%/$^{\circ}C$ and high $T_C$ of $167^{\circ}C$ were achieved for the BBNTM-0.04 ceramics.

The Electrical Properties of Mutilayer Chip Capacitor with X7R by Addition of Rare-Earth Ions (Y2O3, Er2O3) using Design of Experiments (실험계획법을 적용한 X7R 적층 칩 커패시터의 희토류(Y2O3, Er2O3) 첨가에 따른 전기적 특성)

  • Yoon, Jung-Rag;Moon, Hwan;Lee, Heun-Young
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
    • /
    • v.23 no.3
    • /
    • pp.216-221
    • /
    • 2010
  • Employing statistical design of experiments, the difference in doping behaviors of rare-earth ions and their effects on the dielectric property and microstructure of $BaTiO_3$-MgO-$MnO_2$-($Ba_{0.4}Ca_{0.6}$) $SiO_3-Re_2O_3$ (Re = $Y_2O_3$, $Er_2O_3$) system were investigated. Through the statistical analysis we have found that the amount of $Re_2O_3$ are significantly affecting on the dielectric properties. The $Re_2O_3$ improved the dielectric constant, dielectric loss and R*C constant, so the appropriate contents of $Y_2O_3$ and $Er_2O_3$ were 0.8 ~ 1.2 mol% and 0.8 ~ 1.3 mol%, respectively. The MLCC(mutilayer chip capacitor) with $2.0{\times}1.2{\times}1.2mm$ size and 475 nF was also suited for X7R with the above composition. It showed that the dielectric constant and RC constant were 2,839 and 3,675 ${\Omega}F$, respectively in the sintering condition at $1250^{\circ}C$ in $Po_2$ $10^{-7}$ Mpa.

A comparative study on the flux pinning properties of Zr-doped YBCO film with those of Sn-doped one prepared by metal-organic deposition

  • Choi, S.M.;Shin, G.M.;Joo, Y.S.;Yoo, S.I.
    • Progress in Superconductivity and Cryogenics
    • /
    • v.15 no.4
    • /
    • pp.15-20
    • /
    • 2013
  • We investigated the flux pinning properties of both 10 mol% Zr-and Sn-doped $YBa_2Cu_3O_{7-{\delta}}$ (YBCO) films with the same thickness of ~350 nm for a comparative purpose. The films were prepared on the $SrTiO_3$ (STO) single crystal substrate by the metal-organic deposition (MOD) process. Compared with Sn-doped YBCO film, Zr-doped one exhibited a significant enhancement in the critical current density ($J_c$) and pinning force density ($F_p$). The anisotropic $J_{c,min}/J_{c,max}$ ratio in the field-angle dependence of $J_c$ at 77 K for 1 T was also improved from 0.23 for Sn-doped YBCO to 0.39 for Zr-doped YBCO. Thus, the highest magnetic $J_c$ values of 9.0 and $2.9MA/cm^2$ with the maximum $F_p$ ($F_{p,max}$) values of 19 and $5GN/m^3$ at 65 and 77 K for H // c, respectively, could be achieved from Zr-doped YBCO film. The stronger pinning effect in Zr-doped YBCO film is attributable to smaller $BaZrO_3$ (BZO) nanoparticles (the average size ${\approx}28.4$ nm) than $YBa_2SnO_{5.5}$ (YBSO) nanoparticles (the average size ${\approx}45.0$ nm) incorporated in Sn-doped YBCO film since smaller nanoparticles can generate more defects acting as effective flux pinning sites due to larger incoherent interfacial area for the same doping concentration.