• Korean Journal of Materials Research
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• v.16 no.12
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• pp.747-753
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• 2006

(BaSr)$TiO_3$ (BST) thick films were prepared by tape casting method, using $BaTiO_3$ and $SrTiO_3$ powder slurry and their dielectric properties were investigated. With an additive, $Li_2CO_3$, the sintering temperature was lowered by $200^{\circ}C$. Sintering density was 5.7 g/$cm^3$ and the BST thick films exhibited a maximum dielectric constant, tunability at temperatures near phase transition point. Whilst their characteristics were deteriorated above the phase transition temperature, they were unchanged below the phase transition temperature, which is presumedly due to the acceleration of $90^{\circ}$ domain formation, its contribution to the relaxation of internal stress and the increase in sintering according to the replacement of Li.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.234-234
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• 2008

Chemically homogeneous $Ba_{0.6}Sr_{0.4}TiO_3$ (BST) sols were synthesized using barium acetate, strontium acetate, and titanium isoproxide as starting materials. BST thin films of thickness 340 nm were deposited on Pt/$TiO_2/SiO_2$/Si and alumina substrates using spin coating method. The technique used for the processing of these films was Ultraviolet (UV) sol-gel photoannealing, using phto-sensitivity precursor solutions and UV-assisted rapid thermal processing(UV-RTP). The crystallization behaviour of the BST sols and thin films was studied by differential thermal analysis (DTA) and X-ray diffraction (XRD). Variation of permittivity and dielectric loss were measured in LCR-meter, model HP 4394A.

• KIEE International Transactions on Electrophysics and Applications
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• v.11C no.2
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• pp.18-22
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• 2001

The thin films of high permitivity in ferroelectric materials using a capacitor are applied to DRAMs and FRAMs. (Ba, Sr)TiO$_3$ thin as ferroelectric materials were prepared by the sol-gel method and made by spin-coating on the Pt/Sio$_2$/Si substrate at 4,000 [rpm] for 10 seconds. The structural characteristics of the surface were analyzed by fractal dimension. The thickness of BST ceramics thin films was about 260∼280 [nm]. The property of the leakage current was stable with 10-9∼10-11[A] when the applied voltage was 0∼3[V]. BST thin films ha low leakage current properties when fractal dimension was low and a coating area was high.

• Proceedings of the KIEE Conference
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• 2006.10a
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• pp.7-9
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• 2006

$(BaSr)TiO_3$ thick films were prepared by tape casting method using $BaTiO_3$ and $SrTiO_3$ powder slurry in order to investigate dielectric properties and low temperature sintering. Sintering density was $5.7\;g/cm^3$ and the BST sample exhibited the maximum dielectric constant, tunability at temperatures near phase transition point. The dielectric constant was increased and curie temperature was shifted to higher temperature with increasing of annealing temperature.

• Journal of Sensor Science and Technology
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• v.9 no.1
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• pp.83-89
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• 2000

BST thin films were deposited on the ITO coated glass for using TFELD insulating layer by rf magnetron sputtering method. $O_2/(Ar+O_2)$ mixing ratio was 10%, substrate temperature was changed from R.T. to $500^{\circ}C$, and working pressure was changed from 5 mTorr to 30 mTorr. BST thin films deposited with various conditions were investigated electrical, optical, structural properties, and stoichiometry. The result of investigation was achieved good fabrication condition that substrate temperature of $400^{\circ}C$, and working pressure of 30 mTorr. Relative dielectric constant of 254 at 1 kHz, leakage current density was below $3.3{\times}10^{-7\;}A/cm^2$ at 5\;MV/cm applied electric field, and transmittance was over 82% at visible range.

• Journal of the Korea Society of Computer and Information
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• v.25 no.2
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• pp.31-39
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• 2020

In this paper, we introduce a technique for generating synthetic benchmarks based on time series data. Many of the data measured on IoT devices have a time series characteristic that measures numerical changes over time. However, there is a problem that it is difficult to model the data measured over a long period as generalized time series data. To solve this problem, this paper introduces the BST-IGT model. The BST-IGT model separates the entire data into sections that can be easily time-series modeled, collects the generated data into templates, and produces new synthetic benchmarks that share or modify characteristics based on them. As a result of making a new benchmark using the proposed modeling method, we could create a benchmark with multiple aspects by mixing the composite benchmark with the statistical features of the existing data and other benchmarks.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.11a
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• pp.132-135
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• 1999

Recently, the ceramics of high permittivity are applied to DRAM and FRAM. In this study, (B $a_{x}$ S $r_{l-x}$)Ti $O_3$(BST) ceramics thin films were prepared by Sol-Gel method. BST solution was made and spin-coated on Pt/ $SiO_2$/Si substrate at 4000 [rpm] for 10 seconds. Coated specimens were dried at 150[$^{\circ}C$] for 5 minutes. Coating process was repeated 3 times and then sintered at 750[$^{\circ}C$] for 30 minutes. Each specimen was analyzed structure and electrical characteristics. Thickness of BST ceramics thin films are about 2000($\AA$). Dielectric constant and loss of thin films was little decreased at 1[KHz] ~1[KHz]. Dielectric constant and loss to frequency were 250 and 0.02 in $Ba_{0.7}$S $r_{0.3}$Ti $O_3$. The properly of leakage current as the realation between the current and the voltage was that change of the leakage current was stable when the applied voltage was 0~3[V].

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.11a
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• pp.290-293
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• 1999

(Ba$_{0.5}$Sr$_{0.5}$)TiO$_3$ thin films were fabricated at different RTA temperatures and thicknesses by Sol-Gel method. Solution consisting of acetate powders and titanium isopropoxide in a mixture of acetic acid and ethylene glycol were spin coated onto Pt/Ti/SiO$_2$/Si substrates. The films were annealed in the temperature range of 650~80$0^{\circ}C$ for 3 minutes by rapid thermal annealing. These BST thin films were fully crystallized at 75$0^{\circ}C$ and showed a maximum dielectric constant value of $\varepsilon$$_{r}$=~468 and dielectric loss was ~0.025 at a thickness of approximately 4000$\AA$.EX>.>.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1998.11a
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• pp.33-36
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• 1998

BST(66/34) and BSCT(60/30/10) ceramics were prepared by mixed oxide method and studied about the microstructural and dielectric properties with $Y_2$O$_3$, Dy$_2$O$_3$, La$_2$O$_3$, MnCO$_3$. The grain size of undoped BST was 20~30 ${\mu}{\textrm}{m}$, but that of BST, doped content of MnCO$_3$ was 0.1 mol%, was decreased with increasing the contents of $Y_2$O$_3$. As the content of $Y_2$O$_3$ was Increased, Tc was shifted to lower temperature and dielectric constant at Tc was decreased. The dielectric constant of doped BSCT(60/30/10) ceramics ( 0.9 mol% $Y_2$O$_3$. and 0.1 mol% MnCO$_3$) was about 8, 000 at Tc( 22$^{\circ}C$ ).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.05b
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• pp.42-45
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• 2001

The high permittivity are applied to DRAM and FRAM. (Ba,Sr)$TiO_3$ (EST) thin films were prepared by Sol-Gel method. BST solution was made and spin-coated on $Pt/SiO_2/Si$ substrate at 4000 [rpm] for 10 seconds in a time coating. Coated specimens were dried at $90[^{\circ}C]$ for 5 minutes. Coating process was repeated from 3 times to 5 times and then sintered at $750[^{\circ}C]$ for 30 minutes. Each specimen was analyzed structure and electrical characteristics. Thickness of BST ceramics thin films are about 2600-2800[$\AA$] in 3 times. Dielectric constant of thin films was little decreased at 1[KHz]~1[MHz]. Dielectric constant and loss to frequency were 250 and 0.02 in BST3. The property of leakage current was stable When the applied voltage was 0~3[V] Leakage current was $10^{9}\sim10^{11}$[A] at 0~3[V].