• Journal of the Institute of Electronics Engineers of Korea SD
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• v.38 no.5
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• pp.17-17
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• 2001

고유전 (Ba, Sr)TiO₃ (BST) 박막을 이용한 DRAM storage capacitor의 저전계 영역에서의 전하손실을 발생시키는 커패시터의 누설전류는 유전완화전류와 진성 누설전류로 이루진다고 알려져 있다. 특히, 기가급 DRAM의 동작 전압(~IV)에서 유전완화전류가 진성 누설전류에 비해 훨씬 크기 때문에 이에 대한 심도 있는 연구가 필요하다. 본 연구에서는 thermally stimulated current (TSC) 측정법을 BST 박막에 처음으로 적용하여 트랩의 에너지 level 및 공정변화에 따른 트랩 밀도의 상대적 평가를 하였다. 그리고, 기존에 사용되던 전류-전압(I-V) 측정이나 전류-시간(I-t) 측정과 비교 및 분석함으로써 유전완화 전류의 원인을 규명하고 TSC 측정법의 신뢰성을 살펴보았다. 먼저 안정적인 TSC 측정을 위해 전계, 시간, 온도 및 승온속도에 따른 polarization condition을 알아보았다 이 조건을 이용한 TSC 측정으로부터 BST 박막에서의 트랩의 energy level이 0.20(±0.01) eV와 0.45(±0.02) eV임을 알 수 있었다. Rapid thermal annealing (RTA)을 이용한 후속 열처리에 따른 TSC 측정을 통하여 이 트랩들이 산소결핍(oxygen vacancy)에 기인함을 확인할 수 있었다. MIM BST 커패시터의 열처리에 대한 TSC 특성은 전류-전압(I-V) 및 전류-시간(I-t) 특성과 같은 경향성을 보인다. 이것은 TSC 측정이 BST 박막내의 트랩을 평가하는데 있어서 매우 효과적인 방법이라는 것을 보여준다.

• Journal of the Korean Vacuum Society
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• v.7 no.4
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• pp.355-360
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• 1998

Epitaxial $Ba_{0.5}Sr_{0.5}TiO_3$thin films of two different thickness (~250 $\AA$ and ~1340 $\AA$) on MgO(001) prepared by a pulsed laser deposition method were studied by synchroton x-ray scattering measurements. The film initially grew on MgO(001) with a cube-on-cube relationship, maintaining it during further growth. As the film grew, the surface of the film became rough significantly, but the interface between the film and the substrate seemed to have changed little. In the early stage, the film was highly strained in a tetragonal structure with the longer axis parallel to the surface normal direction. As the growth proceeded further, it was mostly relaxed to a cubic structure with the lattice parameter of the bulk value and the mosaic distribution improved significantly in both in-plane and out-of-plane directions.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.649-652
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• 1999

The (Ba, Sr)TiO$_3$(BST) thin films were fabricated on Pt/Ti/SiO$_2$/Si substrate by RF sputtering technique. The structural properties of the BST thin films were investigated with substrate temperature by XRD, SEM, EDS and AES depth profils. Increasing the substrate temperature, barium multi titanate phases were decreased. The BST thin film had a structure of perovskite type, and had peaks of (100), (200) at the substrate temperature of 50$0^{\circ}C$. When the BST thin films were deposited at the substrate temperature of 50$0^{\circ}C$, the composition ratio of Ba/sr was 52/48.

• Electrical & Electronic Materials
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• v.9 no.4
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• pp.336-343
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• 1996

We have studied the preparation and the properties of $Ba_{1-x}$Sr$_{x}$TiO$_{3}$(BST) thin films by using the sol-gel method. Through the comparison of the effects of various solvents and additives in making solutions, we establish the production method of the stable solution which generates the high quality of BST film. We also set up the heat-treatment conditions for depositing the BST thin film through the TGA and XRD analyses. Through the comparison of the surface conditions of BST films deposited on Pt/Ta/SiO$_{2}$/Si and Pt/Ti/SiO$_{2}$/Si substrates, we find that Ta is more efficient diffusion barrier of Si than Ti so that Ta layer prevents the formation of hillocks. We fabricate the planar type capacitor and measure the dielectric properties of the BST thin film deposited on the Pt/Ta/SiO$_{2}$/Si substrate. Dielectric constant and dielectric loss tangent at 1V, 10kHz, and leakage current density at 3V of the BST thin film are 339, 0.052 and 13.3.mu.A/cm$^{2}$, respectively.ely.

• Proceedings of the Korean Ceranic Society Conference
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• 2000.10a
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• pp.178-178
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• 2000

• Proceedings of the Materials Research Society of Korea Conference
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• 1996.05a
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• pp.27-27
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• 1996

• Proceedings of the Materials Research Society of Korea Conference
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• 1997.10a
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• pp.70-70
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• 1997

• Journal of Sensor Science and Technology
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• v.9 no.1
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• pp.83-89
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• 2000

BST thin films were deposited on the ITO coated glass for using TFELD insulating layer by rf magnetron sputtering method. $O_2/(Ar+O_2)$ mixing ratio was 10%, substrate temperature was changed from R.T. to $500^{\circ}C$, and working pressure was changed from 5 mTorr to 30 mTorr. BST thin films deposited with various conditions were investigated electrical, optical, structural properties, and stoichiometry. The result of investigation was achieved good fabrication condition that substrate temperature of $400^{\circ}C$, and working pressure of 30 mTorr. Relative dielectric constant of 254 at 1 kHz, leakage current density was below $3.3{\times}10^{-7\;}A/cm^2$ at 5\;MV/cm applied electric field, and transmittance was over 82% at visible range.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07a
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• pp.393-396
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• 2004

본 논문에서는 완충층용 MgO 박막을 P-type(100)Si 기판위에 작업가스 $Ar:O_2=80:20$, RF 파워 50W, 기판온도 $400^{\circ}C$, 10mtorr의 작업진공에서 $500{\AA}$ 증착하였다. 제작된 MgO/Si 기판위에 RF Magnetron sputtering법으로 작업가스 $Ar:O_2$의 비율을 90:10, 80:20, 70:30으로 변화하면서 $BST(Ba_{0.5}Sr_{0.5}TiO_3)$ 박막을 약 $2000{\AA}$ 증착하였다. XRD 측정결과 작업가스비의 변화에 관계없이(110)BST와 (111)BST 피크만이 관찰되었으며 작업가스 $Ar:O_2=80:20$에서 가장 양호한 결정성을 나타내었다. I-V 측정결과 인가전계 ${\pm}100kV/cm$에서 $10^{-7}A/cm^2$이하의 양호한 누설전류 특성을 보여주고 있으며 C-V 측정결과 작업가스 $Ar:O_2$의 비율 90:10, 80:20, 70:30에서의 비유전율은 각각 283, 305, 296으로서 작업가스비 80:20에서 제작된 박막의 특성이 가장 우수하였다. 작업가스비 80:20에서 제작된 박막의 SEM 측정결과 결정이 성장되었음을 확인할 수 있었고 그레인의 크기는 약 10nm였다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.1
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• pp.28-32
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• 2000

Structural and electrical properties of (Ba, Sr)TiO\ulcorner (BST) thin films prepared by pulsed laser depositon were investigated to verify the influences of post-annealing in oxygen ambient. Increase of post-anneal-ing time in oxygen ambient resulted in not only grain growth but also improvement of crystallinity of BST films. Although the post-annealing in oxygen ambient resulted in the increase of surface roughness, it assisted the dielectric constant increase by eliminating oxygen vacancies. The electrical property enhancement including high dielectric constant and low leakage current density was associated with introducing high pressure of oxygen during the post-annealing.