• 한국초전도학회:학술대회논문집
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• 한국초전도학회 2007년도 High Temperature Superconductivity Vol.XVII
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• pp.74-74
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• 2007

• 한국전기전자재료학회논문지
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• 제15권8호
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• pp.736-741
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• 2002

Phase intergrowth some kinds of the $Bi_2Sr_2Ca_{n-1}Cu_nO_y$ phases is observed in the thin film fabrication at ultralow co-deposition with multi targets by means of ion beam sputtering. The molar fraction of the Bi2212 phase in the mixed crystal of the grown films is investigated as a function of the applied ozone pressure and the substrate temperature. The activation energy for the phase transformation from the Bi2201 to the Bi2212 is estimated in terms of the Avrami equation. This study reveals that the formation of a liquid phase contributes significantly to the construction of the Bi2212 phase in the thin films, differing from the bulk synthesis.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집
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• pp.503-506
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• 2002

BSCCO 2212 HTS was fabricated by CFP(centrifugal forming process). The powder was initially ground in the mixing ratio of 2:2::1:2 with 10% of SrSO$_4$. The temperature increased up to 1035$^{\circ}C$ and 1200$^{\circ}C$ for melting. The melt was poured into the preheated and rotating copper mould from 200 to 600$^{\circ}C$. The specimen was not broken by thermal impact when the melting temperature was over 1050$^{\circ}C$ and copper mould was preheated over 400$^{\circ}C$ for 30min. A tube type of specimen was annealed at 840$^{\circ}C$ or 860$^{\circ}C$ in oxygen atmosphere for 24hours. Typical microstructure was analyzed in terms of CFP parameters by XRD, SEM, and EDS and also superconducting characteristics were compared.

• 한국전기전자재료학회논문지
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• 제13권9호
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• pp.801-804
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• 2000

High-temperature superconductor of Bi-2212 system was fabricated by CFP(Centrifugal Forming Process). To make a uniform specimen slurry was prepared in the ratio of 7:3(powder : binder) and ball milled for 24 hours. Milled slurry was charged into a rotating mold with 450 rpm and dried at room temperature. Then the specimen was performed binder burn-out at 35$0^{\circ}C$ and heated for partial melting to 86$0^{\circ}C$. XRD analysis of most specimens were shown 2212 phase and observed a local plate shped microstructure with a well aligned c-axis direction from SEM images. Measured T$_{c}$(Critical temperature) was about 64 K.K.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 추계학술대회 논문집 Vol.18
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• pp.327-328
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• 2005

Bi-system thin films are prepared by ion beam sputtering technique. Three phases of Bi-2201, Bi-2212 and Bi-2223 appear as stable ones in spite of the conditions for thin film fabrication of Bi-2212 and Bi-2223 compositions, depending on substrate temperature($T_{sub}$) and ozone pressure($PO_3$). It is found out that these phases show similar $T_{sub}$ and $PO_3$ dependence, and that the stable regions of these phases are limited within very narrow temperature.

• 한국초전도ㆍ저온공학회논문지
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• 제8권4호
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• pp.22-25
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• 2006

This paper deals with the computation of the current limiting behavior of high-temperature superconducting (HTS) modules for the superconducting fault current limiter (SFCL). The SFCL module consists of a monofilar type BSCCO-2212 tube and a shunt coil made of copper or brass. The shunt coil is connected to the monofilar superconducting tube in parallel. Through analysis of the quench behavior of the monofilar component with shunt coils, it is achieved to drive an equivalent circuit equation from the experimental circuit structure. In order to analyze the quench behavior of the SFCL module, we derived a partial differential equation technique. Inductance of the monofilar component and the impedance of the shunt coil are calculated by Bio-Savart and Ohm's formula, respectively. We computed the quench behavior using the calculated values, and compared the results with experimental results for the quench characteristics of a component. The results of computation and test agreed well each other, and it was concluded that the analytic result could be applied effectively to design of the distribution-level SFCL system.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.1
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• pp.553-556
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• 2003

금속유기물 용액 증착법(MOD)법은 금속유기물 용액을 스핀 코팅하여 고온 열처리를 통해 대면적의 고온 초전도 박막을 만들 수 있으며, 고가의 진공 시스템이 필요하지 않기 때문에 매우 경제적인 박막 증착 방법이다. 본 연구에서는 MOD법을 이용해서 고온초전도체 마이크로파 필터나 터널접합 소자와 같은 전자 소자 응용 연구를 위해 요구되는 높은 임계전류 특성을 갖도록 박막 성장 조건을 변화시켜서 제작된 고온 초전도체 Bi2Sr2CaCu2O8+d (BSCCO2212) 박막을 제작하였다. 박막 특성은 x-ray diffraction (XRD), scanning electron microscope (SEM)으로 표면적, 구조적 특성을 관찰하고 저항-온도 (R-T) 변화 및 전류-전압 (I-V) 특성 측정을 통해 전기적 특성을 연구하여 임계전류를 향상 시킬 수 있는 박막제작 조건에 관해 논의하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.2
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• pp.1208-1211
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• 2003

High quality $Bi_2Sr_2Ca_nCu_{n+1}O_x$ superconducting thin films fabricated by using the evaporation method at various substrate temperatures, $T_{sub}$, and ozone gas pressures, $pO_3$. The correlation diagrams of the $Bi_2Sr_2Ca_nCu_{n+1}O_x$ phases with $T_{sub}$ and $pO_3$ are established in the 2212 and 2223 compositional films. In spite of 2212 compositional sputtering, Bi2201 and Bi2223 as well as Bi2212 phases come out as stable phases depending on $T_{sub}$ and $pO_3$. From these results, the thermodynamic evaluation of ${\Delta}H$ and ${\Delta}S$, which are related with Gibbs' free energy change for single Bi2212 or Bi2223 phase, was performed.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 학술대회 및 기술세미나 논문집 디스플레이 광소자
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• pp.70-73
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• 2006

High quality $Bi_2Sr_2Ca_nCu_{n+1}O_x$ superconducting thin films fabricated by using the evaporation method at various substrate temperatures, $T_{sub}$, and ozone gas pressures, $pO_3$. The correlation diagrams of the $Bi_2Sr_2Ca_nCu_{n+1}O_x$ phases with $T_{sub}$ and $pO_3$ are established in the 2212 arid 2223 compositional films. In spite of 2212 compositional sputtering, Bi2201 and Bi2223 as well as Bi2212 phases come out as stable phases depending on $T_{sub}$ and $pO_3$. From these results, the thermodynamic evaluation of ${\Delta}H$ and ${\Delta}S$, which are related with Gibbs' free energy change for single Bi2212 or Bi2223 phase, was performed.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 제2회 학술대회 논문집 일렉트렛트 및 응용기술전문연구회
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• pp.40-44
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• 2000

$Bi_2Sr_2Ca_nCu_{n+1}O_y$($n{\geq}0$; BSCCO)thin film is fabricated via two different processes using an ion beam sputtering method i.e. co-deposition and layer-by-layer deposition. A single phase of Bi2212 can be fabricated via the co-deposition process. While it cannot be obtained by the layer-by-layer process. Ultra-low growth rate in our ion beam sputtering system brings out the difference in Bi element adsorption between the two processes and results in only 30% adsorption against total incident Bi amount by layer-by-layer deposition, in contrast to enough Bi adsorption by co-deposition.